公开(公告)号：US20250079345A1

公开(公告)日：2025-03-06

申请号：US18242906

申请日：2023-09-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ian McCallum-Cook ,  Mark Levy ,  Zhong-Xiang He

IPC: H01L23/58 ,  H01L23/31

Abstract: Structures including a wide band-gap semiconductor layer stack and methods of forming such structures. The structure comprises a layer stack on a substrate and a first dielectric layer on the layer stack. The layer stack includes semiconductor layers that comprise a wide band-gap semiconductor material. A seal ring includes a trench that penetrates through the first dielectric layer and the layer stack to the substrate, a second dielectric layer that lines the trench, and a conductor layer including first and second portions inside the trench. The trench surrounds portions of the layer stack and the first dielectric layer. The second dielectric layer includes a first portion disposed between the first portion of the conductor layer and the portion of the layer stack, and the second dielectric layer includes a second portion disposed between the second portion of the conductor layer and the portion of the first dielectric layer.

公开(公告)号：US12040252B2

公开(公告)日：2024-07-16

申请号：US17858660

申请日：2022-07-06

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ramsey Hazbun ,  Cameron Luce ,  Siva P. Adusumilli ,  Mark Levy

IPC: H01L23/473 ,  H01L21/762 ,  H01L23/367 ,  H01L29/51

CPC classification number: H01L23/473 ,  H01L21/76229 ,  H01L23/367 ,  H01L29/515

Abstract: Structures for a microfluidic channel and methods of forming a structure for a microfluidic channel. The structure comprises a trench in a semiconductor substrate and a semiconductor layer inside the trench. The trench has an entrance and a sidewall extending from the entrance into the semiconductor substrate. The semiconductor layer has a first portion surrounding a portion of the trench to define a cavity and a second portion positioned to obstruct the entrance to the trench. The second portion of the semiconductor layer is thicker than the first portion of the semiconductor layer.

公开(公告)号：US20240222366A1

公开(公告)日：2024-07-04

申请号：US18604627

申请日：2024-03-14

Applicant: GlobalFoundries U.S. Inc.

Inventor： Mark Levy ,  Jeonghyun Hwang ,  Siva P. Adusumilli

IPC: H01L27/06 ,  H01L21/8258 ,  H01L29/04 ,  H01L29/06 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L27/0605 ,  H01L21/8258 ,  H01L27/0623 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/16 ,  H01L29/2003

Abstract: Structures including devices, such as transistors, integrated on a bulk semiconductor substrate and methods of forming a structure including devices, such as transistors, integrated on a bulk semiconductor substrate. The bulk semiconductor substrate contains a single-crystal semiconductor material having a diamond crystal lattice structure and a crystal orientation. A first transistor is formed in a first device region of the bulk semiconductor substrate, and a second transistor is formed in a second device region of the bulk semiconductor substrate. The second transistor includes a layer stack on the bulk semiconductor substrate, and the layer stack includes a layer comprised of a III-V compound semiconductor material.

公开(公告)号：US20240159962A1

公开(公告)日：2024-05-16

申请号：US17985223

申请日：2022-11-11

Applicant: GlobalFoundries U.S. Inc.

Inventor： Mark Levy ,  Siva P. Adusumilli ,  Yusheng Bian

IPC: G02B6/122 ,  G02B6/13

CPC classification number: G02B6/122 ,  G02B6/13 ,  G02B2006/12078

Abstract: Structures for a waveguide and methods of forming a waveguide. The structure comprises a substrate, a waveguide core comprising a compound semiconductor material, and a layer disposed on the substrate. The layer comprises the compound semiconductor material, and the layer includes a cavity positioned beneath the waveguide core.

公开(公告)号：US20230223254A1

公开(公告)日：2023-07-13

申请号：US17571932

申请日：2022-01-10

Applicant: GlobalFoundries U.S. Inc.

Inventor： Ramsey Hazbun ,  Mark Levy ,  Alvin Joseph ,  Siva P. Adusumilli

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/20 ,  H01L27/085 ,  H01L21/762

CPC classification number: H01L21/0243 ,  H01L21/02381 ,  H01L21/76224 ,  H01L27/085 ,  H01L29/2003 ,  H01L29/66462 ,  H01L21/02433

Abstract: Structures including a compound-semiconductor-based device and a silicon-based device integrated on a semiconductor substrate and methods of forming such structures. The structure includes a first semiconductor layer having a top surface and a faceted surface that fully surrounds the top surface. The top surface has a first surface normal, and the faceted surface has a second surface normal that is inclined relative to the first surface normal. A layer stack that includes second semiconductor layers is positioned on the faceted surface of the first semiconductor layer. Each of the second semiconductor layers contains a compound semiconductor material. A silicon-based device is located on the top surface of the first semiconductor layer, and a compound-semiconductor-based device is located on the layer stack.

公开(公告)号：US11469225B2

公开(公告)日：2022-10-11

申请号：US17072649

申请日：2020-10-16

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Mark Levy ,  Jeonghyun Hwang ,  Siva P. Adusumilli

IPC: H01L27/06 ,  H01L29/20 ,  H01L21/8258 ,  H01L29/16 ,  H01L29/06 ,  H01L29/04

Abstract: Structures including devices, such as transistors, integrated on a bulk semiconductor substrate and methods of forming a structure including devices, such as transistors, integrated on a bulk semiconductor substrate. The bulk semiconductor substrate contains a single-crystal semiconductor material having a diamond crystal lattice structure and a crystal orientation. A first transistor is formed in a first device region of the bulk semiconductor substrate, and a second transistor is formed in a second device region of the bulk semiconductor substrate. The second transistor includes a layer stack on the bulk semiconductor substrate, and the layer stack includes a layer comprised of a III-V compound semiconductor material.

公开(公告)号：US20210376159A1

公开(公告)日：2021-12-02

申请号：US16890063

申请日：2020-06-02

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Michel J. Abou-Khalil ,  Steven M. Shank ,  Mark Levy ,  Rajendran Krishnasamy ,  John J. Ellis-Monaghan ,  Anthony K. Stamper

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/06 ,  H01L21/763

Abstract: Structures for a field-effect transistor and methods of forming a structure for a field-effect transistor. A shallow trench isolation region is formed in a semiconductor substrate. A trench is formed in the shallow trench isolation region, and a body region is formed in the trench of the shallow trench isolation region. The body region is comprised of a polycrystalline semiconductor material.