公开(公告)号：US10263280B2

公开(公告)日：2019-04-16

申请号：US15129910

申请日：2015-03-26

申请人： Bernhard Haeupler ,  Ulrich Schubert ,  Andreas Wild

发明人： Bernhard Haeupler ,  Ulrich Schubert ,  Andreas Wild

IPC分类号： C08F12/30 ,  H01M10/0565 ,  C08F12/34 ,  C08G65/22 ,  H01M4/60 ,  C07D409/04 ,  C08F134/04

摘要： The problem addressed was that of providing novel polymers which are preparable with a low level of complexity, with the possibility of controlled influence on the physicochemical properties thereof within wide limits in the course of synthesis, and which are usable as active media in electrical charge storage elements for high storage capacity, long lifetime and stable charging/discharging plateaus.9,10-Bis(1,3-dithiol-2-ylidene)-9,10-dihydroanthracene polymers consisting of an oligomeric or polymeric compound of the general formula I have been found.

公开(公告)号：US08158484B2

公开(公告)日：2012-04-17

申请号：US12679385

申请日：2007-10-03

申请人： Marius Orlowski ,  Andreas Wild

发明人： Marius Orlowski ,  Andreas Wild

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L29/7854 ,  H01L29/66795 ,  H01L29/78687

摘要： A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate, and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure.

摘要翻译： 一种形成具有用于反向T沟道场效应晶体管ITFET器件的垂直沟道部分和水平沟道部分的反向T形沟道结构的方法包括提供半导体衬底，在半导体衬底上提供第一半导体材料的第一层， 以及在所述第一层上提供第二半导体材料层。 选择第一和第二半导体材料，使得第一半导体材料具有小于除去第二半导体材料的速率的去除速率。 该方法还包括根据不同的去除速率选择性地去除第一层的一部分和第二层的一部分，以便提供倒置的T形沟道结构的横向层和垂直沟道部分，并且去除 横向层，以提供倒置的T形通道结构的水平通道部分。

公开(公告)号：US08071459B2

公开(公告)日：2011-12-06

申请号：US12936113

申请日：2008-04-17

申请人： Greg Braeckelmann ,  Marius Orlowski ,  Andreas Wild

发明人： Greg Braeckelmann ,  Marius Orlowski ,  Andreas Wild

IPC分类号： H01L21/00

CPC分类号： H01L21/7682 ,  H01L21/76829 ,  H01L21/76834

摘要： A method of sealing an air gap in a layer of a semiconductor structure comprises providing a first layer of the semiconductor structure having at least one air gap for providing isolation between at least two conductive lines formed in the first layer. The at least one air gap extends into the first layer from a first surface of the first layer. The method further comprises forming a barrier layer of a barrier dielectric material over the first surface of the first layer and the at least one air gap. The barrier dielectric material is selected to have a dielectric constant less than 3.5 and to provide a barrier to prevent chemicals entering the at least one air gap. In another embodiment, the at least one air gap extends from a first surface of the first layer to at least a portion of side surfaces of the at least two conductive lines to expose at least a portion of the side surfaces, and a barrier layer of a barrier dielectric material is formed over the exposed portions of the side surfaces of each of the at least two conductive lines.

摘要翻译： 密封半导体结构层中的气隙的方法包括提供具有至少一个气隙的半导体结构的第一层，用于在形成在第一层中的至少两个导电线之间提供隔离。 所述至少一个气隙从所述第一层的第一表面延伸到所述第一层中。 该方法还包括在第一层的第一表面和至少一个气隙上形成阻挡介电材料的阻挡层。 阻挡介电材料被选择为具有小于3.5的介电常数并且提供屏障以防止化学品进入至少一个气隙。 在另一个实施例中，至少一个空气间隙从第一层的第一表面延伸到至少两个导电线的侧表面的至少一部分以暴露至少一部分侧表面，并且阻挡层 在所述至少两根导电线中的每一个的侧表面的暴露部分上形成阻挡介电材料。

公开(公告)号：US07895981B2

公开(公告)日：2011-03-01

申请号：US10550938

申请日：2004-03-26

申请人： Gerlinde Bösl-Flierl ,  Rudolf Flierl ,  Wilhelm Hannibal ,  Michael Jubelt ,  Andreas Knecht ,  Andreas Wild

发明人： Gerlinde Bösl-Flierl ,  Rudolf Flierl ,  Wilhelm Hannibal ,  Michael Jubelt ,  Andreas Knecht ,  Andreas Wild

IPC分类号： F01L1/18

CPC分类号： F01L13/0063 ,  F01L1/08 ,  F01L1/146 ,  F01L1/185 ,  F01L1/20 ,  F01L1/2405 ,  F01L1/267 ,  F01L1/34 ,  F01L1/3442 ,  F01L13/0005 ,  F01L13/0026 ,  F01L2001/34493 ,  F01L2013/0068 ,  F01L2101/00 ,  F01L2105/00 ,  F01L2820/032 ,  F01L2820/033 ,  Y10T74/20882

摘要： In order to produce a variable valve lift device for the lift adjustment of the gas-exchange valves of an internal combustion engine, by means of which with adjustment forces and holding forces, independently from whether said holding forces and adjustment forces are applied mechanically, hydraulically or electrically, with an adjustment of the valve lift being as cost-effective as possible, and with maximum accuracy of the adjustment or control of the valve lift to be taken between the individual cylinders of a multi-cylinder internal combustion engine, and, moreover, the adjustment possibility of the valve lift of the valves of an internal combustion engine with several cylinders is obtained within smallest tolerances, it is suggested that a valve lift device (1) has a rotatable eccentric shaft (3), which consists of several eccentrics (4, 5) and whereby all possible contours of the eccentrics (4, 5) are positioned within a circle, which is formed by means of the external diameters of a bearing (6, 7) of the eccentric shaft (3).

摘要翻译： 为了生产用于内燃机的气体交换阀的升程调节的可变气门升程装置，借助于该调节力和夹持力，独立于机械地，液压地施加所述夹紧力和调节力 或电气，其中气门升程的调节尽可能具有成本效益，并且具有在多缸内燃机的各个气缸之间调节或控制气门升程的最大精度，而且 在最小公差范围内获得具有多个气缸的内燃机的阀门的气门升程的调节可能性，建议气门升降装置（1）具有可旋转的偏心轴（3），该偏心轴由几个偏心 （4,5），并且由此偏心轮（4,5）的所有可能的轮廓定位在圆形内，其通过外径o f是偏心轴（3）的轴承（6,7）。

公开(公告)号：US20100311213A1

公开(公告)日：2010-12-09

申请号：US12679385

申请日：2007-10-03

申请人： Marius Orlowski ,  Andreas Wild

发明人： Marius Orlowski ,  Andreas Wild

IPC分类号： H01L21/336 ,  H01L21/302

CPC分类号： H01L29/7854 ,  H01L29/66795 ,  H01L29/78687

摘要： A method of forming an inverted T shaped channel structure having a vertical channel portion and a horizontal channel portion for an Inverted T channel Field Effect Transistor ITFET device comprises providing a semiconductor substrate, providing a first layer of a first semiconductor material over the semiconductor substrate and providing a second layer of a second semiconductor material over the first layer. The first and the second semiconductor materials are selected such that the first semiconductor material has a rate of removal which is less than a rate of removal of the second semiconductor material. The method further comprises removing a portion of the first layer and a portion of the second layer selectively according to the different rates of removal so as to provide a lateral layer and the vertical channel portion of the inverted T shaped channel structure and removing a portion of the lateral layer so as to provide the horizontal channel portion of the inverted T shaped channel structure.

摘要翻译： 形成具有用于反向T沟道场效应晶体管ITFET器件的垂直沟道部分和水平沟道部分的反向T形沟道结构的方法包括提供半导体衬底，在半导体衬底上提供第一半导体材料层， 在所述第一层上提供第二半导体材料层。 选择第一和第二半导体材料，使得第一半导体材料具有小于除去第二半导体材料的速率的去除速率。 该方法还包括根据不同的去除速率选择性地去除第一层的一部分和第二层的一部分，以便提供倒置的T形沟道结构的横向层和垂直沟道部分，并且去除 横向层，以提供倒置的T形通道结构的水平通道部分。

公开(公告)号：US20060164316A1

公开(公告)日：2006-07-27

申请号：US10528105

申请日：2003-09-11

申请人： Gerald Schillmeier ,  Gerhard Stadler ,  Ralf Exler ,  Andreas Wild

发明人： Gerald Schillmeier ,  Gerhard Stadler ,  Ralf Exler ,  Andreas Wild

IPC分类号： H01Q9/28

CPC分类号： H01Q9/285 ,  H01Q23/00

摘要： An improved antenna assembly, wherein: the opposing end regions of the dipole halves are each electrically connected to a respective connection line; the connection lines lead to two amplifiers; the outputs of both amplifiers are connected to the two inputs of a transform, whose output is at least indirectly electrically connected to a connector, a coaxial connector; one or more filters are provided; the filters are positioned between the connection lines and the connector terminal; the filter or filters is/are designed to suppress mobile radio frequency ranges and/or to protect broadcasting signals.

公开(公告)号：US06615682B2

公开(公告)日：2003-09-09

申请号：US10093356

申请日：2002-03-07

申请人： Roland Meyer ,  Andreas Wild ,  Thomas Schmidt ,  Wolfgang Weigert

发明人： Roland Meyer ,  Andreas Wild ,  Thomas Schmidt ,  Wolfgang Weigert

IPC分类号： F16H5900

CPC分类号： F16H61/2807 ,  F16H61/30 ,  F16H2059/6807 ,  Y10T74/19251 ,  Y10T74/20024 ,  Y10T74/20037 ,  Y10T74/2014

摘要： An actuator for gutter selection in a gear positioning device for an automatic manual transmission has a selector shaft with a selector finger. A gutter selection device is movable back and forth along an axis into a first position and a second position. The selector finger of the selector shaft can move into engagement and out of engagement with the gutter selection device. A single valve device is provided for determining the first and second positions of the gutter selection device.

摘要翻译： 用于自动手动变速器的齿轮定位装置中用于沟槽选择的致动器具有带选择指的选择轴。 沟槽选择装置可沿轴线前后移动到第一位置和第二位置。 选择器轴的选择手指可以移动到与沟槽选择装置接合并脱离接合。 提供单个阀装置用于确定沟槽选择装置的第一和第二位置。

公开(公告)号：US20230342586A1

公开(公告)日：2023-10-26

申请号：US18346966

申请日：2023-07-05

申请人： Ashish Rao Mangalore ,  Philipp Stratmann ,  Gabriel Andres Fonseca Guerra ,  Sumedh Risbud ,  Garrick Michael Orchard ,  Andreas Wild

发明人： Ashish Rao Mangalore ,  Philipp Stratmann ,  Gabriel Andres Fonseca Guerra ,  Sumedh Risbud ,  Garrick Michael Orchard ,  Andreas Wild

IPC分类号： G06N3/04 ,  G06N3/084

CPC分类号： G06N3/04 ,  G06N3/084

摘要： A graph includes nodes connected with one or more edges. Each node in the graph may be encoded in a neuron in a neural network. The neural network may include neurons arranged in a spiking neuromorphic architecture. To find the shortest path between a first node and a second node in the graph, a spike may propagate from a first neuron encoding the first node to a second neuron encoding the second node. Another spike may propagate from the second neuron to the first neuron. Each neuron spiking in a propagation may store a value that indicates the depth of the neuron in a propagation path. A spiking neuron may generate two values in the two propagations, respectively. A spiking neuron having two equal values may be identified. The shortest path includes one or more edges that connect the nodes encoded in the identified spiking neurons.

公开(公告)号：US09856336B2

公开(公告)日：2018-01-02

申请号：US15123071

申请日：2015-03-06

申请人： Bernhard Haeupler ,  Ulrich Schubert ,  Andreas Wild

发明人： Bernhard Haeupler ,  Ulrich Schubert ,  Andreas Wild

IPC分类号： C09D125/18 ,  H01M4/60 ,  H01M10/0525 ,  C08F112/32 ,  C08G61/12 ,  C08G65/22 ,  C07C50/20

摘要： Novel tetracyanoanthraquinodimethane polymers and use thereof. The problem addressed was that of providing novel polymers which are preparable with a low level of complexity, with the possibility of controlled influence on the physicochemical properties thereof within wide limits in the course of synthesis, and which are usable as active media in electrical charge storage elements for high storage capacity, long lifetime and stable charging/discharging plateaus. Tetracyanoanthraquinodimethane polymers consisting of an oligomeric or polymeric compound of the general formula I have been found.

公开(公告)号：US08293608B2

公开(公告)日：2012-10-23

申请号：US12865517

申请日：2008-02-08

申请人： Marius Orlowski ,  Andreas Wild

发明人： Marius Orlowski ,  Andreas Wild

IPC分类号： H01L21/20

CPC分类号： H01L29/78696 ,  H01L29/42392 ,  H01L29/66772 ,  H01L29/78687

摘要： An intermediate product in the manufacture of a vertical multiple-channel FET device containing alternating —Si—[(SiGe)—Si]u- stacked layers is shown, as well as a process for selectively etching the SiGe layers in such a stacked layer system, and products obtained from such selective etching. Differential Ge content is added to the successive layers to provide uniform removal of the sacrificial SiGe layers.

摘要翻译： 示出了制造包含交替的-Si - [（SiGe）-Si]层叠层的垂直多通道FET器件的中间产品，以及用于在这种堆叠层系统中选择性蚀刻SiGe层的工艺 ，以及从这种选择性蚀刻获得的产品。 将差分Ge含量添加到连续层中以提供牺牲SiGe层的均匀去除。