公开(公告)号：US20190066780A1

公开(公告)日：2019-02-28

申请号：US16079998

申请日：2016-02-19

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Miao Hu ,  John Paul Strachan ,  Zhiyong Li ,  R. Stanley Williams

IPC: G11C13/00 ,  G11C11/56

CPC classification number: G11C13/0028 ,  G06G7/16 ,  G11C11/56 ,  G11C13/0026 ,  G11C13/004 ,  G11C13/0069 ,  G11C2213/77

Abstract: Examples herein relate to linear transformation accelerators. An example linear transformation accelerator may include a crossbar array programmed to calculate a linear transformation. The crossbar array has a plurality of words lines, a plurality of bit lines, and a memory cell coupled between each unique combination of one word line and one bit line, where the memory cells are programmed according to a linear transformation matrix. The plurality of word lines are to receive an input vector, and the plurality of bit lines are to output an output vector representing a linear transformation of the input vector.

公开(公告)号：US10177310B2

公开(公告)日：2019-01-08

申请号：US15324691

申请日：2014-07-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary Gibson ,  James Elmer Abbott, Jr. ,  Zhiyong Li

IPC: H01L45/00 ,  H01L27/24 ,  C22C5/04 ,  C22C27/02 ,  C22C27/04 ,  C22C30/00

Abstract: A non-volatile memory device includes two electrodes and an active region disposed between and in electrical contact with the electrodes. The active region contains a switching material capable of carrying a species of dopants and transporting the dopants under an electrical field. The electrode is an amorphous conductive material comprising 5 to 90 at % of a first metal, 5 to 90 at % of a second metal, and 5 to 90 at % of a metalloid, wherein the metalloid is any of carbon, silicon, and boron. The metalloid, the first metal, and the second metal account for at least 70 at % of the amorphous conductive material.

公开(公告)号：US10074695B2

公开(公告)日：2018-09-11

申请号：US15500084

申请日：2014-12-19

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Jianhua Yang ,  Stanley Williams ,  Max Zhang ,  Zhiyong Li

IPC: H01L47/00 ,  H01L27/26

CPC classification number: H01L27/26 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L47/005

Abstract: A negative differential resistance (NDR) device for non-volatile memory cells in crossbar arrays is provided. Each non-volatile memory cell is situated at a crosspoint of the array. Each non-volatile memory cell comprises a switching layer in series with an NDR material containing fast diffusive atoms that are electrochemically inactive. The switching layer is positioned between two elec-trodes.

公开(公告)号：US20180188133A1

公开(公告)日：2018-07-05

申请号：US15397798

申请日：2017-01-04

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Tahir Cader ,  Zhiyong Li ,  John Franz

IPC: G01M3/40

CPC classification number: G01M3/40

Abstract: Examples herein relate to detecting a coolant leak. For example, a system includes a nanosensor coupled to an airflow channel in a server. The nanosensor provides a resistance measurement to a controller. The system includes the controller coupled to the nanosensor. The controller detects the coolant leak based on the resistance measurement from the nanosensor.

公开(公告)号：US20170200493A1

公开(公告)日：2017-07-13

申请号：US15320779

申请日：2014-07-25

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Kyung Min Kim ,  Jianhua Yang ,  Zhiyong Li

IPC: G11C13/00

CPC classification number: G11C13/003 ,  G11C2013/0073 ,  G11C2213/72

Abstract: A system for asymmetrically selecting a memory element is described. The system includes a number of memory cells in a crossbar array. Each memory cell includes a memory element to store information. The memory element is defined as an intersection between a column electrode and a row electrode of the crossbar array. Each memory cell also includes a selector to select a target memory element by relaying a first selecting voltage to a column electrode that corresponds to the target memory element and relaying a second selecting voltage to a row electrode that corresponds to the target memory element. The system also includes a controller to pass a first standing voltage to column electrodes of the crossbar array and to pass a second standing voltage to row electrodes of the crossbar array. The first standing voltage is different than the second standing voltage.

公开(公告)号：US20170077179A1

公开(公告)日：2017-03-16

申请号：US15308923

申请日：2014-05-05

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Jianhua Yang ,  Ning Ge ,  Zhiyong Li

IPC: H01L27/24 ,  H01L45/00

CPC classification number: H01L27/2418 ,  H01L27/2409 ,  H01L45/00 ,  H01L45/04 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/16

Abstract: A selector with an oxide-based layer includes an oxide-based layer that has a first region and a second region. The first region contains a metal oxide in a first oxidation state, and the second region contains the metal oxide in a second oxidation state. The first region also forms a part of each of two opposite faces of the oxide-based layer.

Abstract translation: 具有氧化物层的选择器包括具有第一区域和第二区域的氧化物基层。 第一区域包含处于第一氧化态的金属氧化物，第二区域包含处于第二氧化态的金属氧化物。 第一区域还形成氧化物基层的两个相对面中的每一个的一部分。