公开(公告)号：US20170040143A1

公开(公告)日：2017-02-09

申请号：US15333669

申请日：2016-10-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasuo Ohgoshi ,  Michikazu Morimoto ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32192 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

Abstract translation: 等离子体处理装置包括用于处理等离子体的样品的处理室，用于在处理室内产生等离子体的RF电源，用于向安装有样品的样品台提供RF偏置功率的RF偏置电源， 脉冲产生单元，用于产生用于调制来自RF电源的用于产生等离子体的输出的第一脉冲和用于调制来自RF偏置电源的输出的第二脉冲，以及用于提供样品对样品的处理的控制的控制器 。 脉冲发生单元产生基于从控制器发送的脉冲延迟时间同步的第一脉冲和第二脉冲。 建立脉冲延迟时间以延迟相对于第一脉冲的第二脉冲。

公开(公告)号：US08741166B2

公开(公告)日：2014-06-03

申请号：US13664940

申请日：2012-10-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Tomoyuki Watanabe ,  Michikazu Morimoto ,  Mamoru Yakushiji ,  Tetsuo Ono

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32132

Abstract: A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.

Abstract translation: 提供了一种等离子体蚀刻方法，其可以提供与现有技术相比可以提高要蚀刻的膜的蚀刻选择比与不同于待蚀刻的膜的膜的蚀刻选择比。 本发明提供了一种等离子体蚀刻方法，用于选择性地蚀刻待蚀刻的膜以与要蚀刻的膜不同的膜，其中使用能够产生沉积膜的气体进行待蚀刻的膜的等离子体蚀刻 包含与不同胶片的组分相似的部件。