公开(公告)号：US10727088B2

公开(公告)日：2020-07-28

申请号：US15284668

申请日：2016-10-04

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu Morimoto ,  Yasuo Ohgoshi ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01L21/00 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/311 ,  H01J37/32

Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.

公开(公告)号：US10522331B2

公开(公告)日：2019-12-31

申请号：US15333669

申请日：2016-10-25

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yasuo Ohgoshi ,  Michikazu Morimoto ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

公开(公告)号：US09741579B2

公开(公告)日：2017-08-22

申请号：US14846736

申请日：2015-09-05

Applicant: Hitachi High-Technologies Corporation

Inventor： Nanako Tamari ,  Michikazu Morimoto ,  Naoki Yasui

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

CPC classification number: H01L21/30655 ,  H01J37/32146 ,  H01J37/32568 ,  H01J37/32715 ,  H01J37/32935 ,  H01J37/32963 ,  H01L21/32137 ,  H01L21/67253

Abstract: A plasma processing apparatus includes a sample stage disposed in a processing chamber within a vacuum chamber. A wafer mounted on a top surface of the sample stage is processed by using plasma formed in the processing chamber. The plasma processing apparatus further includes electrodes disposed on a part on a center side and a part on a peripheral side within the sample stage and supplied with radio frequency power. Large amplitude and small amplitude are repeated with a predetermined period in each of the radio frequency powers supplied respectively to the electrode on the center side and the electrode on the peripheral side. A control apparatus adjusts a length of large amplitude term, or the length of the large amplitude term and a ratio of the length to a period in each of the radio frequency powers to different values.

公开(公告)号：US20150144594A1

公开(公告)日：2015-05-28

申请号：US14609807

申请日：2015-01-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Shunsuke Kanazawa ,  Naoki Yasui ,  Michikazu Morimoto ,  Yasuo Ohgoshi

IPC: H01J37/32 ,  C23F4/00

CPC classification number: H01J37/32311 ,  C23F4/00 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32302 ,  H01L21/32137

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract translation: 等离子体处理装置包括对样品进行等离子体处理的处理室，向处理室供给用于等离子体生成的第一高频电力的第一高频电源，提供第二高频电源的第二高频电源 放置样品的样品级的功率和产生用于对第一高频功率进行时间调制的第一脉冲的脉冲产生装置和用于对第二高频功率进行时间调制的第二脉冲。 脉冲发生装置包括控制装置，其控制第一和第二脉冲，使得第一脉冲的频率高于第二脉冲的频率，并且第二脉冲的导通周期包含在第一脉冲的导通周期中 。

公开(公告)号：US20200161092A1

公开(公告)日：2020-05-21

申请号：US16749180

申请日：2020-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/3213

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

公开(公告)号：US09514967B2

公开(公告)日：2016-12-06

申请号：US13742409

申请日：2013-01-16

Applicant: Hitachi High-Technologies Corporation

Inventor： Yasuo Ohgoshi ,  Michikazu Morimoto ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32146 ,  H01J37/32174 ,  H01J37/32192 ,  H01J37/32706 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a processing chamber for processing a sample with a plasma, an RF power supply for generating the plasma within the processing chamber, an RF bias power supply for supplying RF bias power to a sample stage on which the sample is mounted, a pulse generation unit for creating first pulses for modulating the output from the RF power supply for generating the plasma and second pulses for modulating the output from the RF bias power supply, and a controller for providing control of the processing of the sample with the sample. The pulse generation unit creates the first pulses and the second pulses synchronized based on a pulse delay time transmitted from the controller. The pulse delay time is established to delay the second pulses relative to the first pulses.

Abstract translation: 等离子体处理装置包括用于处理等离子体的样品的处理室，用于在处理室内产生等离子体的RF电源，用于向安装有样品的样品台提供RF偏置功率的RF偏置电源， 脉冲产生单元，用于产生用于调制来自RF电源的用于产生等离子体的输出的第一脉冲和用于调制来自RF偏置电源的输出的第二脉冲，以及用于提供样品对样品的处理的控制的控制器 。 脉冲发生单元产生基于从控制器发送的脉冲延迟时间同步的第一脉冲和第二脉冲。 建立脉冲延迟时间以相对于第一脉冲延迟第二脉冲。

公开(公告)号：US20160225587A1

公开(公告)日：2016-08-04

申请号：US15091730

申请日：2016-04-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/3266 ,  H01J37/32935 ,  H01J2237/2485 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/67069 ,  H01L22/26

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

Abstract translation: 一种等离子体处理方法，其中可以从低微波功率到高微波功率的宽范围内确保稳定的工艺区域。 等离子体处理方法包括通过连续放电难以制造等离子体的区域以及通过所产生的等离子体等离子体处理被处理物的区域容易地制造等离子体，其中通过脉冲放电产生等离子体，其中ON 和OFF），在ON期间产生脉冲放电的射频功率是通过连续放电促进等离子体生产的功率，并且控制脉冲放电的占空比使得无线电的平均功率 每个循环的频率功率是在难以通过连续放电产生等离子体的区域中的功率。

公开(公告)号：US20160181131A1

公开(公告)日：2016-06-23

申请号：US15056142

申请日：2016-02-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu Morimoto ,  Yasuo Ohgoshi ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01L21/67 ,  H01J37/32

Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus.A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.

Abstract translation: 提供一种等离子体处理装置，其具有提供可在宽重复频带中高精度地控制的时间调制的间歇射频功率的射频电源，以及使用等离子体处理装置的等离子体处理方法。 一种等离子体处理装置，包括：真空容器; 真空容器中的等离子体产生部等离子体; 安装在真空容器中并安装有样品的阶段; 以及向所述载波台施加临时调制的间歇射频功率的射频电源，其中，所述射频电源具有两个以上的不同频带，并且通过具有相同范围的重复频率对所述射频功率进行时间调制 在每个频带中使用的模拟信号。

公开(公告)号：US08992724B2

公开(公告)日：2015-03-31

申请号：US13749784

申请日：2013-01-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Shunsuke Kanazawa ,  Naoki Yasui ,  Michikazu Morimoto ,  Yasuo Ohgoshi

IPC: C23F1/00 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01J37/32311 ,  C23F4/00 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32302 ,  H01L21/32137

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

Abstract translation: 等离子体处理装置包括对样品进行等离子体处理的处理室，向处理室供给用于等离子体生成的第一高频电力的第一高频电源，提供第二高频电源的第二高频电源 放置样品的样品级的功率和产生用于对第一高频功率进行时间调制的第一脉冲的脉冲产生装置和用于对第二高频功率进行时间调制的第二脉冲。 脉冲发生装置包括控制装置，其控制第一和第二脉冲，使得第一脉冲的频率高于第二脉冲的频率，并且第二脉冲的导通周期包含在第一脉冲的导通周期中 。

公开(公告)号：US20140220785A1

公开(公告)日：2014-08-07

申请号：US14248844

申请日：2014-04-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Tomoyuki Watanabe ,  Michikazu Morimoto ,  Mamoru Yakushiji ,  Tetsuo Ono

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32132

Abstract: A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.

Abstract translation: 提供了一种等离子体蚀刻方法，其可以提供与现有技术相比可以提高要蚀刻的膜的蚀刻选择比与不同于待蚀刻的膜的膜的蚀刻选择比。 本发明提供了一种等离子体蚀刻方法，用于选择性地蚀刻待蚀刻的膜以与要蚀刻的膜不同的膜，其中使用能够产生沉积膜的气体进行待蚀刻的膜的等离子体蚀刻 包含与不同胶片的组分相似的部件。