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公开(公告)号：US12144204B2
公开(公告)日：2024-11-12
申请号：US17432217
申请日：2021-02-04
Inventor： Ning Liu , Qinghe Wang , Liusong Ni , Tao Sun , Bin Zhou , Liangchen Yan
IPC: H10K59/12 , H10K59/121 , H10K59/122 , H10K59/124 , H10K59/126 , H10K59/35
Abstract: A displaying substrate, a manufacturing method thereof, and a display panel. The displaying substrate includes: a first capacitor electrode at least partially located in luminous zones, a buffer layer covering the first capacitor electrode, and a second capacitor electrode and an active layer that are disposed on the buffer layer and do not overlap with each other, wherein the active layer is located in a non-luminous zone, and the first capacitor electrode, the buffer layer and the second capacitor electrode form a storage capacitor.
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公开(公告)号：US11961848B2
公开(公告)日：2024-04-16
申请号：US17265789
申请日：2020-05-14
Inventor： Jun Liu , Liangchen Yan , Bin Zhou , Yadong Liang , Ning Liu , Leilei Cheng , Jingang Fang
IPC: H01L27/12 , H01L21/02 , H01L21/4757 , H01L21/4763
CPC classification number: H01L27/1248 , H01L27/124 , H01L27/127 , H01L21/02178 , H01L21/02244 , H01L21/02252 , H01L21/47573 , H01L21/47635 , H01L27/1225
Abstract: Disclosed are a display substrate and a manufacturing method therefor, and a display device. The display substrate comprises: a substrate base, and an active layer, a gate insulating layer, a first metal film layer, an interlayer insulating layer, a second metal film layer, and a passivation layer stacked in sequence on the substrate base. The first metal film layer comprises a pattern of a gate and a gate line. The second metal film layer comprises a pattern of a source/drain and a data line. The gate line and the data line are partially arranged opposite to each other. An oxide metal layer is provided on the surface of the side of the region of the gate line opposite to the data line facing the data line.
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公开(公告)号：US11785811B2
公开(公告)日：2023-10-10
申请号：US17241703
申请日：2021-04-27
Inventor： Ning Liu , Jun Liu , Wei Song , Qinghe Wang , Bin Zhou , Liangchen Yan
IPC: H01L29/08 , H10K59/124 , H10K59/126 , H10K59/12
CPC classification number: H10K59/124 , H10K59/126 , H10K59/1201
Abstract: An array substrate, a method for manufacturing the array substrate and a display device are provided. The array substrate includes: a base substrate, and a thin film transistor, a storage capacitor, and a lapping pattern for connecting the thin film transistor to the storage capacitor arranged on the base substrate; wherein the thin film transistor includes a semiconductor layer, a gate insulation layer, a gate electrode, an interlayer insulation layer, a source electrode and a drain electrode arranged sequentially in that order; the interlayer insulation layer includes at least two inorganic insulation layers and at least one organic insulation layer laminated one on another, and both a layer proximate to the base substrate and a layer distal to the base substrate in the interlayer insulation layer are the inorganic insulation layers.
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公开(公告)号：US11737305B2
公开(公告)日：2023-08-22
申请号：US17260018
申请日：2020-05-27
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Ning Liu , Leilei Cheng , Junlin Peng , Yingbin Hu , Liusong Ni
IPC: H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K101/30 , H10K102/10 , H10K102/00
CPC classification number: H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K2101/30 , H10K2102/103 , H10K2102/3026
Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
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25.发明授权公开(公告)号：US11342431B2
公开(公告)日：2022-05-24
申请号：US16767247
申请日：2019-12-18
Inventor： Tongshang Su , Dongfang Wang , Qinghe Wang , Ning Liu , Yongchao Huang , Yu Ji , Zheng Wang , Liangchen Yan
IPC: H01L29/423 , H01L29/786 , H01L29/49 , H01L29/66 , H01L29/40 , H01L21/223 , H01L21/3213 , H01L21/383 , H01L21/4763 , H01L27/12
Abstract: A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The thin film transistor is formed on a substrate and includes: an active layer on the substrate, the active layer including a source region, a drain region, and a channel region between the source region and the drain region; a first gate electrode on a side of the active layer away from the substrate; and a second gate electrode on a side of the first gate electrode away from the substrate, wherein a thickness of the first gate electrode is smaller than a thickness of the second gate electrode.
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Patent Agency Ranking
公开(公告)号：US11189646B2
公开(公告)日：2021-11-30
申请号：US16580320
申请日：2019-09-24
Applicant: BOE Technology Group Co., Ltd.
Inventor： Luke Ding , Jingang Fang , Bin Zhou , Ning Liu , Guangyao Li
IPC: H01L27/12 , H01L21/027 , H01L49/02 , H01L29/786
Abstract: A display substrate, a method for manufacturing the same, and a display device are disclosed. The display substrate includes: a base substrate; and a conductive pattern, a first insulating layer and a conductive layer laminated on the base substrate, wherein the first insulating layer has a plurality of first via holes, and the conductive layer includes a signal line, the signal line being electrically connected to the conductive pattern through the plurality of first via holes. The present disclosure may achieve efficient transmission of signals and ensure the display effect of the display device.
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公开(公告)号：US20210327987A1
公开(公告)日：2021-10-21
申请号：US16605782
申请日：2019-05-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jingang Fang , Jun Cheng , Ce Zhao , Luke Ding , Ning Liu
Abstract: A display substrate, a method for manufacturing the same, and a display device are provided. The display substrate includes: a base substrate, and a conductive layer and a passivation layer which are stacked on the base substrate. The display substrate has a peripheral region and a capacitor region, the conductive layer is located in the peripheral region, the conductive layer is used for electrically connecting with an external driving circuit in the display device, a thickness of a part of the passivation layer in the capacitor region is less than a thickness of a part of the passivation layer in the peripheral region, and the capacitor region is provided with a capacitor that charges a pixel unit in the display substrate.
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28.发明申请公开(公告)号：US20200075773A1
公开(公告)日：2020-03-05
申请号：US16403860
申请日：2019-05-06
Inventor： Yang Zhang , Luke Ding , Bin Zhou , Haitao Wang , Ning Liu , Jingang Fang , Yongchao Huang , Liangchen Yan
IPC: H01L29/786 , H01L27/12 , H01L29/66
Abstract: A thin film transistor, a method of manufacturing the same, an array substrate and a display panel are disclosed. The thin film transistor includes a light blocking layer, an electrode layer, and a combination layer, which are sequentially stacked. The electrode layer includes a gate electrode, a source electrode and a drain electrode which are separated from one another, and the gate electrode is located between the source electrode and the drain electrode. The light blocking layer includes a first portion of which an orthogonal projection is located between an orthogonal projection of the gate electrode and an orthogonal projection of the source electrode; and a second portion of which an orthogonal projection is located between the orthogonal projection of the gate and an orthogonal projection of the drain. The combination layer includes an active layer.
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公开(公告)号：US10418447B2
公开(公告)日：2019-09-17
申请号：US15940043
申请日：2018-03-29
Inventor： Guangyao Li , Guangcai Yuan , Dongfang Wang , Jun Wang , Qinghe Wang , Ning Liu
IPC: H01L31/032 , H01L29/24 , H01L29/45 , H01L29/49 , H01L29/786 , H01L21/445 , H01L31/0392 , H01L31/113 , H01L29/66 , H01L21/02 , H01L29/84 , H01L27/12 , H01L27/28
Abstract: Provided is a thin film transistor, a production method thereof, and an electronic apparatus. The thin film transistor comprises a substrate, and a gate electrode, a gate insulator layer, a source electrode, a drain electrode and an active layer on the substrate, wherein the active layer comprises a stack of two or more layers of graphene-like two-dimensional semiconductor material. The electronic apparatus comprises the thin film transistor, and may be used as an optical or mechanical sensor.
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30.发明申请公开(公告)号：US20190074306A1
公开(公告)日：2019-03-07
申请号：US16037159
申请日：2018-07-17
Inventor： Jun Liu , Yongchao Huang , Tongshang Su , Leilei Cheng , Jun Wang , Ning Liu
IPC: H01L27/12 , H01L21/768 , H01L21/308 , H01L21/311 , H01L21/3213
Abstract: A method for fabricating a contact hole of an array substrate, an array substrate and a display device are disclosed, the method includes: coating a topmost layer with a first photoresist coating, exposing but not developing a part of the first photoresist coating, corresponding to a first contact hole, in an exposure process; coating the first photoresist coating with a second photoresist coating, exposing a part of the second photoresist coating, corresponding to the first contact hole, in an exposure process; developing and removing exposed parts of the first and second photoresist coatings, wherein a size of a removed part of the second photoresist coating, corresponding to the first contact hole, is smaller than a size of a removed part of the first photoresist coating, corresponding to the first contact hole; and removing parts of functional film layers, corresponding to the first contact hole, to form the first contact hole.
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