公开(公告)号：US20250123536A1

公开(公告)日：2025-04-17

申请号：US18485452

申请日：2023-10-12

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Yuan Yuan ,  Thomas Van Vaerenbergh ,  Antoine Descos ,  Stanley Cheung ,  Wayne Sorin ,  Yiwei Peng

IPC: G02F3/02 ,  G02F1/21 ,  G02F1/313

Abstract: An example optical system having an electro-optical (EO) logic gate connected to a controller is presented. The controller modulates a first encoded electrical signal and a second encoded electrical signal based on an operation selection input. The EO logic gate includes a first Mach Zehnder interferometer (MZI) coupled between an optical input port and an optical output port; a second MZI optically coupled in parallel with the first MZI; a first phase shifter adjacent to the first MZI and; and a second phase shifter adjacent to the second MZI. The phase shifters apply phase shifts to the optical signals propagating via the first and second MZIs based on the modulated first encoded electrical signal and the modulated second encoded electrical signal to cause an optical output at the optical output port to vary based on the logic operation of the first encoded electrical signal and the second encoded electrical signal.

公开(公告)号：US12242142B2

公开(公告)日：2025-03-04

申请号：US17661249

申请日：2022-04-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Wayne Victor Sorin ,  Stanley Cheung

IPC: G02F1/015 ,  G02F1/025 ,  G02F1/225 ,  G02F1/21 ,  H04B10/2507

Abstract: Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.

公开(公告)号：US20240329489A1

公开(公告)日：2024-10-03

申请号：US18192509

申请日：2023-03-29

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Yiwei Peng ,  Wayne Sorin ,  Yuan Yuan ,  Stanley Cheung ,  Thomas Van Vaerenbergh ,  Marco Fiorentino

IPC: G02F1/21 ,  G02F1/225 ,  G06N3/04

CPC classification number: G02F1/212 ,  G02F1/225 ,  G06N3/04 ,  G02F2203/50

Abstract: An example Mach-Zehnder interferometer (MZI) is provided. The MZI includes a first waveguide arm and a second waveguide arm coupled to the first waveguide arm via a pair of optical couplers. In the proposed MZI, at least one of the first waveguide arm and the second waveguide arm includes a plurality of Bragg-grating segments and a phase-shifter segment formed between adjacent Bragg-grating segments of the plurality of Bragg-grating segments. The phase-shifter segment formed between adjacent Bragg-grating segments induces a predefined phase-shift in an optical signal propagating through respective at least one of the first waveguide arm and the second waveguide arm, resulting in increased linearity an optical transmission via the MZI.

公开(公告)号：US12094987B2

公开(公告)日：2024-09-17

申请号：US17073152

申请日：2020-10-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Zhihong Huang ,  Di Liang ,  Xiaoge Zeng

IPC: H01L31/0232 ,  G02B6/293 ,  G02B6/42 ,  H01L27/144 ,  H01L31/108 ,  H01L31/18 ,  H04B10/25 ,  H04B10/50 ,  H04B10/516 ,  H04B10/67

CPC classification number: H01L31/02327 ,  G02B6/29338 ,  G02B6/4215 ,  H01L27/1446 ,  H01L31/1085 ,  H01L31/1804 ,  H04B10/25 ,  H04B10/516 ,  H04B10/5051 ,  H04B10/506 ,  H04B10/67

Abstract: Integrated optical filter and photodetectors and methods of fabrication thereof are described herein according to the present disclosure. An example of an integrated optical filter and photodetector described herein includes a substrate, an insulator layer on the substrate, and a semiconductor layer on the insulator layer. An optical filter having a resonant cavity is formed in or on the semiconductor layer. The integrated optical filter and photodetector further includes two first metal fingers and a second metal finger interdigitated between the two first metal fingers on the semiconductor layer forming Schottky barriers. The first metal fingers are constructed from a different metal relative to the second metal finger.

公开(公告)号：US20240184182A1

公开(公告)日：2024-06-06

申请号：US18062040

申请日：2022-12-06

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Stanley Cheung ,  Yuan Yuan ,  Yiwei Peng ,  Zhuoran Fang ,  Bassem Tossoun ,  Geza Kurczveil ,  Raymond G. Beausoleil

IPC: G02F1/225 ,  G02F1/21

CPC classification number: G02F1/2257 ,  G02F1/212

Abstract: An example optical device, such as a Mach-Zehnder interferometer (MZI) is presented. The MZI includes a plurality of optical waveguide arms. At least one of the plurality of optical waveguide arms comprises a control gate, an optical waveguide, and a floating gate positioned between the control gate and the optical waveguide and electrically isolated from the optical waveguide and the control gate. The control gate receives a control voltage. The application of the control voltage to the control gate causes charges to accumulate in the floating gate resulting in a non-volatile change in an operating wavelength of the MZI.

公开(公告)号：US20240113490A1

公开(公告)日：2024-04-04

申请号：US17937071

申请日：2022-09-30

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Stanley Cheung ,  Wayne Victor Sorin ,  Yuan Yuan ,  Raymond G. Beausoleil ,  Di Liang

IPC: H01S3/083 ,  H01S3/08 ,  H01S3/10 ,  H01S3/106 ,  H01S3/107

CPC classification number: H01S3/083 ,  H01S3/08027 ,  H01S3/08031 ,  H01S3/10053 ,  H01S3/1062 ,  H01S3/107

Abstract: Examples described herein relate to an optical device. The optical device includes a first microring resonator (MRR) laser having a first resonant frequency and a first free spectral range (FSR). The first FSR is greater than a channel spacing of the optical device. Further, the optical device includes a first frequency-dependent filter formed along a portion of the first MRR laser via a common bus waveguide to attenuate one or more frequencies different from the first resonant frequency. A length of the common bus waveguide is chosen to achieve a second FSR of the common bus waveguide to be substantially equal to the channel spacing to enable a single-mode operation for the optical device. Moreover, the optical device includes a first reflector formed at a first end of the common bus waveguide to enhance a unidirectionality of optical signal within the first MRR laser.

公开(公告)号：US20240019637A1

公开(公告)日：2024-01-18

申请号：US17812554

申请日：2022-07-14

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yiwei Peng ,  Yuan Yuan ,  Zhihong Huang

IPC: G02B6/293 ,  G02B6/125 ,  G02B6/122

CPC classification number: G02B6/29338 ,  G02B6/125 ,  G02B6/1225

Abstract: Examples described herein relate to an optical resonating device. The optical resonating device includes a primary waveguide, a microring resonator, and a microring resonator photodiode. The primary waveguide allows a passage of an optical signal. The microring resonator is formed adjacent to the primary waveguide to couple therein a portion of the optical signal passing through the primary waveguide. Furthermore, the microring resonator photodiode is formed adjacent to the microring resonator to measure an intensity of the portion of the optical signal coupled into the microring resonator.

公开(公告)号：US11502215B2

公开(公告)日：2022-11-15

申请号：US17249192

申请日：2021-02-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Di Liang ,  Xiaoge Zeng ,  Zhihong Huang

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0336

Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.

公开(公告)号：US20230014190A1

公开(公告)日：2023-01-19

申请号：US17305892

申请日：2021-07-16

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Sudharsanan Srinivasan ,  Di Liang ,  Zhihong Huang

IPC: G02B6/42

Abstract: Examples described herein relate to a ring resonator. The ring resonator may include an annular waveguide having a waveguide base and a waveguide core narrower than the waveguide base. Further, the ring resonator may include an outer contact region comprising a first-type doping and disposed annularly and at least partially surrounding an outer annular surface of the waveguide base. Furthermore, the ring resonator may include an inner contact region comprising a second-type doping and disposed annularly contacting an inner annular surface of the waveguide base. Moreover, the ring resonator may include an annular detector region disposed annularly at a distance from and covering at least a portion of a surface of the waveguide core and contacting the outer contact region.

公开(公告)号：US20220271186A1

公开(公告)日：2022-08-25

申请号：US17249192

申请日：2021-02-23

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Yuan Yuan ,  Di Liang ,  Xiaoge Zeng ,  Zhihong Huang

IPC: H01L31/107 ,  H01L31/0336 ,  H01L31/02

Abstract: Examples described herein relate to an avalanche photodiode (APD) and an optical receiver including the APD. The APD may include a substrate and a photon absorption region disposed on the substrate. The substrate may include a charge carrier acceleration region under the photon absorption region; a charge region adjacent to the charge carrier acceleration region; and a charge carrier multiplication region adjacent to the charge region. The charge carrier acceleration region, the charge region, and the charge carrier multiplication region are laterally formed in the substrate. When a biasing voltage is applied to the optoelectronic device, photon-generated free charge carriers may be generated in the photon absorption region and are diffused into the charge carrier acceleration region. The charge carrier acceleration region is configured to accelerate the photon-generated free charge carriers prior to the photon-generated free charge carriers entering into the charge region and undergoing impact ionization in the charge carrier multiplication region.