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公开(公告)号：US10811549B2
公开(公告)日：2020-10-20
申请号：US16260256
申请日：2019-01-29
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Geza Kurczveil , Di Liang , Bassem Tossoun , Chong Zhang , Xiaoge Zeng , Zhihong Huang , Raymond Beausoleil
IPC: H01L31/0352 , H01L31/0232 , H01L31/107 , H01L31/0304
Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.
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公开(公告)号：US11422027B1
公开(公告)日：2022-08-23
申请号：US17177024
申请日：2021-02-16
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Yuan Yuan , Thomas Van Vaerenbergh , Bassem Tossoun , Di Liang
Abstract: An apparatus includes a photodetector and a memristor coupled to the photodetector. The photodetector is configured to receive and convert optical signals to electrical signals to program the memristor to an on or off state. The apparatus further includes a ring resonator coupled to the memristor and configured to modulate light based on the on or off state of the memristor.
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Patent Agency Ranking
公开(公告)号：US20220069541A1
公开(公告)日：2022-03-03
申请号：US17004955
申请日：2020-08-27
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Bassem Tossoun , Di Liang , John Paul Strachan
Abstract: An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.
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公开(公告)号：US20240184182A1
公开(公告)日：2024-06-06
申请号：US18062040
申请日：2022-12-06
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Stanley Cheung , Yuan Yuan , Yiwei Peng , Zhuoran Fang , Bassem Tossoun , Geza Kurczveil , Raymond G. Beausoleil
CPC classification number: G02F1/2257 , G02F1/212
Abstract: An example optical device, such as a Mach-Zehnder interferometer (MZI) is presented. The MZI includes a plurality of optical waveguide arms. At least one of the plurality of optical waveguide arms comprises a control gate, an optical waveguide, and a floating gate positioned between the control gate and the optical waveguide and electrically isolated from the optical waveguide and the control gate. The control gate receives a control voltage. The application of the control voltage to the control gate causes charges to accumulate in the floating gate resulting in a non-volatile change in an operating wavelength of the MZI.
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公开(公告)号：US20240004259A1
公开(公告)日：2024-01-04
申请号：US17855690
申请日：2022-06-30
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Bassem Tossoun , Stanley Cheung
CPC classification number: G02F1/2257 , G02F1/212 , G02F1/025
Abstract: A memristor-integrated Mach-Zehnder Interferometer (MZI) device is implemented having the capability to function as a new type of photonic device that can be further leveraged to implement a wide-range of photonic applications, such as photonic chips, PICs, optical FPGAs, and the like. The memristor-integrated MZI device distinctly incorporates the photonic capabilities of an MZI with the resistive memory capabilities of a memristor, in order to create a photonic device that supports optical/photonic functions on a component-level. For example, MZI circuitry can include two waveguides coupled to an output terminal, wherein the MZI circuitry produces an optical signal as output and propagates the output optical signal to the optical terminal; and a memristor integrated on one or the two waveguides of the MZI circuitry, wherein the memristor receives an electrical signal as input and causes a phase shift in the output optical signal from the MZI circuitry.
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公开(公告)号：US11355899B2
公开(公告)日：2022-06-07
申请号：US17004955
申请日：2020-08-27
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Bassem Tossoun , Di Liang , John Paul Strachan
Abstract: An optical device includes a light-emitting device integrated with a memory device. The memory device include a first electrode and a second electrode, and the light-emitting device includes a third electrode and the second electrode. In such configuration, a first voltage between the second electrode and the third electrode causes the light-emitting device to emit light of a first wavelength, and a second voltage between the first electrode and the second electrode while the memory device is at OFF state causes the light-emitting device to emit light of a second wavelength shorter than the first wavelength or while the memory device is at ON state causes the light-emitting device to emit light of a third wavelength longer than the first wavelength.
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公开(公告)号：US20200243701A1
公开(公告)日：2020-07-30
申请号：US16260256
申请日：2019-01-29
Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP
Inventor： Geza Kurczveil , Di Liang , Bassem Tossoun , Chong Zhang , Xiaoge Zeng , Zhihong Huang , Raymond Beausoleil
IPC: H01L31/0352 , H01L31/0304 , H01L31/107 , H01L31/0232
Abstract: A quantum-dot based avalanche photodiode (QD-APD) may include a silicon substrate and a waveguide on which a quantum dot (QD) stack of layers is formed having a QD light absorption layer, a charge multiplication layer (CML), and spacer layers. The QD stack may be formed within a p-n junction. The waveguide may include a mode converter to facilitate optical coupling and light transfer from the waveguide to the QD light absorption layer. The QD absorption layer and the CML layer may be combined or separate layers. The CML may generate electrical current from the absorbed light with more than 100% quantum efficiency when the p-n junction is reverse-biased.
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