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21.发明授权Method of producing phase shift mask blank, method of producing phase shift mask, phase shift mask blank, and phase shift mask 有权产生相移掩模空白的方法，产生相移掩模的方法，相移掩模空白和相移掩模公开(公告)号：US07344806B2
公开(公告)日：2008-03-18
申请号：US10806202
申请日：2004-03-23
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , C23C14/06 , C23C14/3464 , G03F1/54 , G03F1/68
摘要： There is disclosed a method of producing a phase shift mask blank wherein the method includes at least a step of forming one or more layers of phase shift films on a substrate by a sputtering method, and in the step, the phase shift films are formed by the sputtering method while simultaneously discharging plural targets having different compositions. Thereby, a phase shift mask blank having a desired composition and quality, in particular, having a phase shift film with few defects can be easily produced.
摘要翻译： 公开了一种制造相移掩模板的方法，其中该方法至少包括通过溅射法在衬底上形成一层或多层相移膜的步骤，并且在该步骤中，相移膜由 同时排出具有不同组成的多个靶的溅射方法。 由此，可以容易地制造具有期望的组成和质量的相移掩模坯料，特别是具有少量缺陷的相移膜。
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公开(公告)号：US20070148642A1
公开(公告)日：2007-06-28
申请号：US10526061
申请日：2003-08-29
申请人： Naomi Kondo , Eiko Matsui , Hideo Kaneko , Minako Aoki , Mizuho Nagao , Kimiko Kasahara , Koji Tatebayashi , Hiroaki Hattori , Toru Egashira
发明人： Naomi Kondo , Eiko Matsui , Hideo Kaneko , Minako Aoki , Mizuho Nagao , Kimiko Kasahara , Koji Tatebayashi , Hiroaki Hattori , Toru Egashira
CPC分类号： C12Q1/6883 , C12Q2600/156 , C12Q2600/172
摘要： A method of detecting genes which comprises detecting gene polymorphisms in allergy-predisposition-related genes; i.e., interleukin 12 receptor IL-1 β2 chain and β1 chain genes, interleukin 18 receptor α chain gene, interferon γ receptor 1 chain gene and interleukin 12.p40 subunit gene, to thereby detect allergic predisposition. Use of the present method enables contribution to the prevention of onset of allergic diseases and to the treatment of allergic diseases.
摘要翻译： 一种检测基因的方法，包括检测过敏易感基因相关基因中的基因多态性; 即白介素12受体IL-1β2链和β1链基因，白细胞介素18受体α链基因，干扰素γ受体1链基因和白介素12.p40亚基基因，从而检测过敏性倾向。 使用本发明的方法能够有助于预防过敏性疾病的发作和对过敏性疾病的治疗。
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公开(公告)号：US20070092807A1
公开(公告)日：2007-04-26
申请号：US11545451
申请日：2006-10-11
CPC分类号： G03F1/32 , Y10T428/31616
摘要： A susceptor having the most basic structure has a three-layer structure including a first and a second transparent quartz part and an opaque quartz part sandwiched therebetween. For example, the opaque quartz part is made of “foamed quartz”. In addition, the opacity of the opaque quartz part to flash light is determined to fall within an appropriate range based on the material or thickness of the opaque quartz part, taking into consideration the composition or thickness of a thin film formed on the substrate and various conditions concerning the energy of the irradiation light during flash light irradiation or the like. The stack structure may be composed of a stack of a plurality of opaque quartz layers having different opacities.
摘要翻译： 具有最基本结构的感受体具有包括第一和第二透明石英部分和夹在其间的不透明石英部分的三层结构。 例如，不透明石英部分由“发泡石英”制成。 此外，考虑到在基板上形成的薄膜的组成或厚度以及各种不同的形状，不透明石英部分对闪光的不透明度被确定为基于不透明石英部分的材料或厚度在适当范围内 关于闪光照射等期间的照射光的能量的条件。 堆叠结构可以由具有不同不透明度的多个不透明石英层的堆叠构成。
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公开(公告)号：US07195846B2
公开(公告)日：2007-03-27
申请号：US10724734
申请日：2003-12-02
摘要： A photomask blank having a film of at least one layer formed on a substrate is manufactured by forming a film on a substrate and irradiating the film with light from a flash lamp. A photomask is manufactured from the thus manufactured photomask blank by forming a patterned resist on the film on the blank by photolithography, etching away those portions of the film which are not covered with the resist, and removing the resist. The photomask blank and photomask have minimized warpage and improved chemical resistance.
摘要翻译： 通过在基板上形成膜并用来自闪光灯的光照射薄膜来制造具有形成在基板上的至少一层的膜的光掩模坯料。 通过光刻法在坯料上的膜上形成图案化的抗蚀剂，蚀刻掉未被抗蚀剂覆盖的膜的那些部分，并除去抗蚀剂，由这样制造的光掩模坯料制造光掩模。 光掩模坯料和光掩模具有最小的翘曲和改善的耐化学性。
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公开(公告)号：US06727027B2
公开(公告)日：2004-04-27
申请号：US10020987
申请日：2001-12-19
申请人： Tetsushi Tsukamoto , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki , Tsutomu Shinagawa , Satoshi Okazaki
发明人： Tetsushi Tsukamoto , Hideo Kaneko , Tamotsu Maruyama , Yukio Inazuki , Tsutomu Shinagawa , Satoshi Okazaki
IPC分类号： G03F900
摘要： In the manufacture of a photomask blank, a seed layer of a chromium material containing oxygen, nitrogen and/or carbon is formed on a transparent substrate before a light-shielding film and an antireflective film are deposited thereon. Any film on the seed layer builds up in accordance with fine granular growth, and so the resulting photomask blank has an improved surface roughness, which enables high-sensitivity detection in the process of defect inspection and circuit pattern inspection. By lithographically patterning the photomask blank, a photomask is fabricated.
摘要翻译： 在光掩模坯料的制造中，在其上沉积有遮光膜和抗反射膜之前，在透明基板上形成含有氧，氮和/或碳的铬材料的晶种层。 种子层上的任何薄膜均按照细颗粒生长形成，因此得到的光掩模坯料具有改善的表面粗糙度，这使得能够在缺陷检查和电路图形检查的过程中进行高灵敏度检测。 通过光刻图案化光掩模坯料，制造光掩模。
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公开(公告)号：US06641958B2
公开(公告)日：2003-11-04
申请号：US09902645
申请日：2001-07-12
申请人： Yukio Inazuki , Tamotsu Maruyama , Mikio Kojima , Hideo Kaneko , Masataka Watanabe , Satoshi Okazaki
发明人： Yukio Inazuki , Tamotsu Maruyama , Mikio Kojima , Hideo Kaneko , Masataka Watanabe , Satoshi Okazaki
IPC分类号： G03F900
CPC分类号： G03F1/32
摘要： A phase shift mask blank includes a transparent substrate and a phase shift film composed primarily of a metal and silicon. The substrate has an etch rate A and the phase shift film has an etch rate B when the blank is patterned by reactive ion etching, such that the etch selectivity B/A is at least 5.0. When a phase shift mask is manufactured from the blank, the substrate is less prone to overetching, providing good controllability and in-plane uniformity of the phase shift in patterned areas. The phase shift mask can be used to fabricate semiconductor integrated circuits to a smaller minimum feature size and a higher level of integration.
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公开(公告)号：US5554303A
公开(公告)日：1996-09-10
申请号：US397564
申请日：1995-03-02
CPC分类号： G11B5/8404
摘要： An improvement is proposed in the method for the preparation of a magnetic recording medium by forming a magnetic recording layer of a magnetic alloy on the surface of a non-magnetic substrate plate of, e.g., silicon so as to impart the magnetic recording medium with improved CSS (contact-start-stop) characteristics still without affecting the magnetic recording density. The improvement can be obtained by subjecting the surface of the substrate plate, prior to the formation of the magnetic recording layer, to a surface-roughening treatment which is performed either by a dry-process such as plasma etching and reactive ion etching or by a wet-process of anisotropic etching by using an aqueous solution of sodium or potassium hydroxide as the anisotropic etching solution. In particular, the plasma etching or reactive ion etching is conducted in the presence of a particulate scattering source body of aluminum, etc. placed in the vicinity of the CSS zone so that the surface-roughening effect is limited to the CSS zone by the deposition of particulates scattered therefrom leaving the recording zone unroughened not to decrease the recording density.
摘要翻译： 通过在例如硅的非磁性基板的表面上形成磁性合金的磁记录层，在制备磁记录介质的方法中提出了一种改进，以使磁记录介质具有改进的 CSS（接触开始 - 停止）特性仍然不影响磁记录密度。 可以通过在形成磁记录层之前将基板的表面进行表面粗糙化处理来获得改进，所述表面粗糙化处理通过诸如等离子体蚀刻和反应离子蚀刻之类的干法进行，或通过 通过使用氢氧化钠或氢氧化钾的水溶液作为各向异性蚀刻溶液进行各向异性蚀刻的湿法。 特别地，等离子体蚀刻或反应离子蚀刻在放置在CSS区域附近的铝等微粒散射源体的存在下进行，使得表面粗糙化效果通过沉积被限制到CSS区域 从而离开记录区未变粗糙的颗粒不会降低记录密度。
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公开(公告)号：US08858814B2
公开(公告)日：2014-10-14
申请号：US12732637
申请日：2010-03-26
申请人： Satoshi Watanabe , Hideo Kaneko , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
发明人： Satoshi Watanabe , Hideo Kaneko , Ryuji Koitabashi , Shinichi Igarashi , Yoshio Kawai , Shozo Shirai
摘要： A photomask blank is provided comprising a transparent substrate, a single or multi-layer film including an outermost layer composed of chromium base material, and an etching mask film. The etching mask film is a silicon oxide base material film formed of a composition comprising a hydrolytic condensate of a hydrolyzable silane, a crosslink promoter, and an organic solvent and having a thickness of 1-10 nm. The etching mask film has high resistance to chlorine dry etching, ensuring high-accuracy processing of the photomask blank.
摘要翻译： 提供一种光掩模坯料，其包括透明基板，包括由铬基材料构成的最外层的单层或多层膜和蚀刻掩模膜。 蚀刻掩模膜是由包含可水解硅烷，交联促进剂和有机溶剂的水解缩合物并且具有1-10nm厚度的组合物形成的氧化硅基底膜。 蚀刻掩模膜具有高耐氯干蚀刻性，确保光掩模坯料的高精度加工。
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29.发明授权公开(公告)号：US08417018B2
公开(公告)日：2013-04-09
申请号：US12750023
申请日：2010-03-30
申请人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
发明人： Yukio Inazuki , Hideo Kaneko , Hiroki Yoshikawa
IPC分类号： G06K9/00
CPC分类号： G03F1/84 , G03F7/70783
摘要： A photomask blank having a film on a substrate is inspected by (A) measuring a surface topography of a photomask blank having a film to be inspected for stress, (B) removing the film from the photomask blank to provide a treated substrate, (C) measuring a surface topography of the treated substrate, and (D) comparing the surface topography of the photomask blank with the surface topography of the treated substrate, thereby evaluating a stress in the film.
摘要翻译： 通过（A）测量具有要检查的应力膜的光掩模坯料的表面形貌来检查在基板上具有膜的光掩模坯料，（B）从光掩模坯料除去膜以提供经处理的基板（C ）测量经处理的基底的表面形貌，以及（D）将光掩模毛坯的表面形貌与经处理的基底的表面形貌进行比较，从而评估膜中的应力。
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公开(公告)号：US08304146B2
公开(公告)日：2012-11-06
申请号：US12687539
申请日：2010-01-14
IPC分类号： G03F1/26
摘要： A photomask is manufactured by providing a photomask blank comprising a transparent substrate, a phase shift film, and a light-shielding film, the phase shift film and the light-shielding film including silicon base material layers, a N+O content in the silicon base material layer of the phase shift film differing from that of the light-shielding film, and chlorine dry etching the blank with oxygen-containing chlorine gas in a selected O/Cl ratio for selectively etching away the silicon base material layer of the light-shielding film.
摘要翻译： 通过提供包括透明基板，相移膜和遮光膜的光掩模坯料制造光掩模，所述相移膜和所述遮光膜包括硅基材料层，所述硅中的N + O含量 所述相移膜的基材层与所述遮光膜的基材层不同，并且以选择的O / Cl比例用含氧氯气对所述毛坯进行氯干蚀刻，以选择性地蚀刻所述发光元件的硅基材层， 屏蔽膜。
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