摘要:
Disclosed is a display device including a thin film transistor. A method for forming the display device includes forming an organic semiconductor pattern in the presence of a magnetic field or an electric field. Due to the presence of a magnetic field or an electric field, the molecules of the organic semiconductor layer of the thin film transistor are substantially aligned in a predetermined direction.
摘要:
An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.
摘要:
A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the barrier layer, wet-etching the Cu layer using a first etchant, and dry-etching the barrier layer using a second etchant using the wet-etched Cu layer as an etch mask.
摘要:
A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
摘要:
A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.
摘要:
A method of fabricating integral-type LCD devices incorporating polysilicon-type TFTs reduces the number of masks required to fabricate a thin film transistor (TFT). According to the method, a lightly-doped-drain (LDD) type TFT is formed using a single photoresist pattern and a photoresist ashing technique.
摘要:
A method of manufacturing a liquid crystal display device includes attaching a flexible substrate and a base substrate using an adhesive therebetween, the base substrate including substantially pure iron; forming a plurality of thin films on a surface of the flexible substrate attached to the base substrate, the surface of the flexible substrate opposite to the attached surface of the flexible substrate; and etching the base substrate after forming the plurality of thin films.
摘要:
A method of manufacturing an array substrate for a liquid crystal display device includes forming a gate electrode, a gate line, and a gate pad on a substrate, forming a gate insulating layer on the gate electrode, the gate line, and the gate pad, forming an active layer on the gate insulating layer, forming an ohmic contact layer on the active layer, forming source and drain electrodes, a data line and a data pad on the ohmic contact layer, forming a pixel electrode, forming a gate pad terminal on the gate insulating layer, forming a data pad terminal covering the data pad, forming a passivation layer on the pixel electrode, the gate pad terminal and the data pad terminal, exposing the gate pad terminal and the gate pad by etching the passivation layer and the gate insulating layer, and exposing the data pad terminal by etching the passivation layer.
摘要:
A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the barrier layer, wet-etching the Cu layer using a first etchant, and dry-etching the barrier layer using a second etchant using the wet-etched Cu layer as an etch mask.
摘要:
A composition for removing a copper-compatible resist includes: about 0.1% to about 10% by weight of an alkylbenzenesulfonic compound; about 10% to about 99% by weight of a glycolether compound; and about 0.5% to about 5% by weight of a corrosion inhibitor.