公开(公告)号：US10830696B2

公开(公告)日：2020-11-10

申请号：US16200352

申请日：2018-11-26

Applicant: IMEC vzw ,  Stichting IMEC Nederland

Inventor： Peter Offermans ,  Joris Van Campenhout

IPC: G01N21/3586 ,  G01J3/42 ,  G02B6/122 ,  G01J5/28 ,  G02B6/12 ,  G01J5/10 ,  G01J5/08 ,  G01J1/04 ,  G01J1/44 ,  G01J3/02 ,  H01L31/09

Abstract: A solid-state device for photo detection, in general, of terahertz radiation is disclosed. One aspect is a detector device comprising a body having a photoconductive material, a first antenna element connected to a first portion of the body, and a second antenna element connected to a second portion of the body. The first antenna element and the second antenna element are arranged to induce an electric field in the body in response to an incident signal. Further, the device has a waveguide arranged to couple light into the photoconductive material via a coupling interface between the waveguide and the body, where the coupling interface faces away from the first portion and the second portion of the body and is closer to the first portion than to the second portion.

公开(公告)号：US10763643B2

公开(公告)日：2020-09-01

申请号：US15840779

申请日：2017-12-13

Applicant: IMEC VZW ,  Katholieke Universiteit Leuven, KU LEUVEN R&D ,  Universiteit Gent

Inventor： Joris Van Campenhout ,  Clement Merckling ,  Maria Ioanna Pantouvaki ,  Ashwyn Srinivasan ,  Irina Kulkova

IPC: H01S5/323 ,  H01S5/026 ,  H01S5/042 ,  H01S5/10 ,  H01S5/343 ,  H01S5/12 ,  H01S5/02 ,  H01S5/30

Abstract: An electrically-operated semiconductor laser device and method for forming the laser device are provided. The laser device includes a fin structure to which a waveguide is optically coupled. The waveguide is optically coupled to passive waveguides at either end thereof. The fin structure includes an array of fin elements, each fin element comprising Group III-V materials.

公开(公告)号：US09482816B2

公开(公告)日：2016-11-01

申请号：US14560909

申请日：2014-12-04

Applicant: IMEC VZW

Inventor： Joris Van Campenhout ,  Philippe Absil ,  Peter Verheyen

IPC: G02B6/12 ,  G02B6/124 ,  G02B6/42 ,  G02B6/34

CPC classification number: G02B6/124 ,  G02B6/34 ,  G02B6/4214 ,  G02B2006/12061 ,  G02B2006/12104 ,  G02B2006/12107 ,  G02B2006/12147

Abstract: Semiconductor photonics devices for coupling radiation to a semiconductor waveguide are described. An example photonics device comprises a semiconductor-on-insulator substrate comprising a semiconductor substrate, a buried oxide layer positioned on top of the semiconductor substrate, and the semiconductor waveguide on top of the buried oxide layer to which radiation is to be coupled. The example device also comprises a grating coupler positioned on top of the buried oxide layer and configured for coupling incident radiation to the semiconductor waveguide. The semiconductor substrate has a recessed portion at the backside of the semiconductor substrate for receiving incident radiation to be coupled to the semiconductor waveguide via the backside of the semiconductor substrate and the grating coupler.

Abstract translation: 描述了用于将辐射耦合到半导体波导的半导体光子器件。 一种示例性光子器件包括绝缘体上半导体衬底，其包括半导体衬底，位于半导体衬底顶部的掩埋氧化物层，以及辐射将与之耦合的掩埋氧化物层顶部的半导体波导。 示例性器件还包括位于掩埋氧化物层顶部并被配置用于将入射辐射耦合到半导体波导的光栅耦合器。 半导体衬底在半导体衬底的背面具有凹陷部分，用于接收经由半导体衬底和光栅耦合器的背面与半导体波导耦合的入射辐射。

公开(公告)号：US09472705B2

公开(公告)日：2016-10-18

申请号：US14757617

申请日：2015-12-23

Applicant: IMEC VZW ,  Universiteit Gent

Inventor： Hongtao Chen ,  Joris Van Campenhout ,  Gunther Roelkens

IPC: H01L31/107 ,  H01L31/0232 ,  H01L31/105 ,  H01L31/028 ,  H01L31/18

CPC classification number: H01L31/107 ,  G02B6/42 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/03529 ,  H01L31/105 ,  H01L31/1808 ,  Y02E10/50

Abstract: An integrated avalanche photodetector and a method for fabrication thereof. The integrated avalanche photodetector comprises a Ge body adapted to conduct an optical mode. The Ge body comprises a first p-doped region that extends from a first main surface to a second main surface of the Ge body. The Ge body further comprises a first n-doped region that extends from the first main surface towards the second main surface of the Ge body. An intrinsic region occupies the undoped part of the Ge body. A first avalanche junction is formed by the first n-doped region that is located aside the p-doped region. The Ge body further comprises an incidence surface, suitable for receiving an optical mode, and a second n-doped Ge region that covers the Ge body and forms a second avalanche junction with the first p-doped region at the first main surface.