公开(公告)号：US11637093B2

公开(公告)日：2023-04-25

申请号：US15988656

申请日：2018-05-24

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Anup Pancholi ,  Sansaptak Dasgupta ,  Chad Mair

IPC: H01L25/075 ,  H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  G09G3/32

Abstract: Micro light-emitting diode (LED) displays, and fabrication and assembly of micro LED displays, are described. In an example, a pixel element for a micro-light emitting diode (LED) display panel includes a blue color nanowire or nanopyramid LED above a first nucleation layer above a substrate, the blue color nanowire or nanopyramid LED including a first GaN core. A green color nanowire or nanopyramid LED is above a second nucleation layer above the substrate, the green color nanowire or nanopyramid LED including a second GaN core. A red color nanowire or nanopyramid LED is above a third nucleation layer above the substrate, the red color nanowire or nanopyramid LED including a GaInP core.

公开(公告)号：US20230097800A1

公开(公告)日：2023-03-30

申请号：US17485358

申请日：2021-09-25

Applicant: Intel Corporation

Inventor： Joshua Bruce Fryman ,  Khaled Ahmed ,  James E. Jaussi ,  Sergey Yuryevich Shumarayev

IPC: H04B10/50 ,  H04B10/80 ,  H01L33/48 ,  H01L33/58

Abstract: An apparatus comprising a chip comprising a plurality of micro-emitters, the micro-emitters to couple to a plurality of data lines and to an optical fiber, wherein the micro-emitters are to generate optical signals for parallel transmission through the optical fiber, the optical signals corresponding to data communicated on the data lines.

公开(公告)号：US11605760B2

公开(公告)日：2023-03-14

申请号：US15985582

申请日：2018-05-21

Applicant: Intel Corporation

Inventor： Khaled Ahmed

IPC: H01L33/50 ,  H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L33/42 ,  H01L33/32 ,  H01L33/06 ,  H01L33/00 ,  H01L33/24 ,  H01L27/12

Abstract: Micro light-emitting diode displays having nanophosphors, and methods of fabricating micro light-emitting diode displays having nanophosphors, are described. In an example, a pixel structure includes a substrate having a plurality of conductive interconnect structures in a first dielectric layer thereon. A plurality of micro light emitting diode devices is in a second dielectric layer above the first dielectric layer, including a first blue micro light emitting diode device, a second blue micro light emitting diode device, and a green micro light emitting diode device. A transparent conducting oxide layer is disposed on the plurality of micro light emitting diode devices and on the second dielectric layer. A phosphor layer is on the transparent conducting oxide layer at a location vertically aligned with the first blue micro light emitting diode device but not at a location vertically aligned with the second blue micro light emitting diode device.

公开(公告)号：US20230049007A1

公开(公告)日：2023-02-16

申请号：US17402313

申请日：2021-08-13

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Anna M. Prakash ,  Ronald C. Woodbeck ,  Santosh Pabba

IPC: H01L33/00 ,  H01L21/683 ,  H01L33/62 ,  H01L33/60 ,  H01L33/20

Abstract: Micro light-emitting diodes (LED) are distanced from a mirror layer that reflects light emitted by the LEDs to increase the light extraction efficiency of the LEDs. In some embodiments, micro LEDs are electrically coupled to the mirror layer by vias positioned at an end of the LED positioned proximate to the mirror layer. In other embodiments, a conductive layer is positioned adjacent to an electrode of multiple micro LEDs and a pillar contacts the conductive layer at a location where the conductive layer is not positioned adjacent to a micro LED electrode. Vias and pillars allow the mirror height to be increased relative to structures where micro LEDs extend into a mirror layer. Increasing the mirror height can reduce the amount of destructive interference at a release layer caused by reflections of LED-emitted light by the mirror layer when the release layer is ablated via laser irradiation.

公开(公告)号：US11569293B2

公开(公告)日：2023-01-31

申请号：US17316288

申请日：2021-05-10

Applicant: INTEL CORPORATION

Inventor： Khaled Ahmed ,  Kunjal Parikh ,  Peter L. Chang

IPC: H01L27/15 ,  H01L33/00 ,  H01L33/18

Abstract: A micro-light emitting diode (LED) display panel and a method of forming the display panel, the micro-LED display panel having a monolithically grown micro-structure including a first color micro-LED that is a first color nanowire LED, and a second color micro-LED that is a second color nanowire LED.

公开(公告)号：US11482644B2

公开(公告)日：2022-10-25

申请号：US16147748

申请日：2018-09-29

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Sansaptak Dasgupta ,  Ivan-Christophe Robin

IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/44 ,  H01L33/22 ,  H01L27/15 ,  H01L33/60 ,  H01L33/36

Abstract: Embodiments described herein comprise micro light emitting diodes (LEDs) and methods of forming such micro LEDs. In an embodiment, a nanowire LED comprises a nanowire core that includes GaN, an active layer shell around the nanowire core, where the active layer shell includes InGaN, a cladding layer shell around the active layer shell, where the cladding layer comprises p-type GaN, a conductive layer over the cladding layer, and a spacer surrounding the conductive layer. In an embodiment, a refractive index of the spacer is less than a refractive index of the cladding layer shell.

公开(公告)号：US20220198995A1

公开(公告)日：2022-06-23

申请号：US17127859

申请日：2020-12-18

Applicant: Intel Corporation

Inventor： Khaled Ahmed

IPC: G09G3/32 ,  H01L25/075 ,  H01L27/12 ,  H01L29/786

Abstract: A micro-LED display having a plurality of pixels arranged in a two-dimensional matrix, wherein an individual pixel of the plurality of pixels each includes a light-emission section and a drive circuit to drive the light-emission section. The drive section includes an in-pixel PWM circuitry to receive a sawtooth or triangular pulse and an electric potential based on an image signal voltage, and to output a current pulse based on a comparison of the sawtooth or triangular pulse and the electric potential. The in-pixel PWM circuitry includes at most 7 transistors. The micro-LED display includes is coupled to one or more circuitries coupled to the plurality of pixels to provide the sawtooth or triangular pulse and the electric potential.

公开(公告)号：US20220122842A1

公开(公告)日：2022-04-21

申请号：US17563968

申请日：2021-12-28

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Anup Pancholi ,  John Heck ,  Thomas Sounart ,  Harel Frish ,  Sansaptak Dasgupta

IPC: H01L21/02 ,  H01L21/8234 ,  H01L21/8222

Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.

公开(公告)号：US11275245B2

公开(公告)日：2022-03-15

申请号：US16473983

申请日：2017-03-30

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Ali Khakifirooz

IPC: G02B27/01 ,  H01L27/15 ,  H01L27/32 ,  H01L21/02 ,  H01L33/00 ,  G09G3/32 ,  H01L33/62 ,  H01L25/075

Abstract: Embodiments of the present disclosure describe light emitting displays having a light emitter layer that includes an array of light emitters and a wafer having a driving circuit coupled with the light emitter layer, computing devices incorporating the light emitting displays, methods for formation of the light emitting displays, and associated configurations. A light emitting display may include a light emitter layer that includes an array of light emitters and a wafer coupled with the light emitter layer, where the wafer includes a driving circuit formed thereon to drive the light emitters. Other embodiments may be described and/or claimed.

公开(公告)号：US20210375620A1

公开(公告)日：2021-12-02

申请号：US16890937

申请日：2020-06-02

Applicant: Intel Corporation

Inventor： Khaled Ahmed ,  Anup Pancholi ,  John Heck ,  Thomas Sounart ,  Harel Frish ,  Sansaptak Dasgupta

IPC: H01L21/02 ,  H01L21/8222 ,  H01L21/8234

Abstract: A device includes a layer including a first III-Nitride (III-N) material, a channel layer including a second III-N material, a release layer including nitrogen and a transition metal, where the release layer is between the first III-N material and the second III-N material. The device further includes a polarization layer including a third III-N material above the release layer, a gate structure above the polarization layer, a source structure and a drain structure on opposite sides of the gate structure where the source structure and the drain structure each include a fourth III-N material. The device further includes a source contact on the source structure and a drain contact on the drain structure.