公开(公告)号：US20180061750A1

公开(公告)日：2018-03-01

申请号：US15251450

申请日：2016-08-30

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Jessica Dechene ,  Elbert Huang ,  Joe Lee

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49827 ,  H01L21/4803 ,  H01L21/4846 ,  H01L21/486 ,  H01L23/498 ,  H01L23/49838 ,  H01L23/49872 ,  H01L23/49894 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/5329 ,  H01L23/53295

Abstract: A multi-level semiconductor device and a method of fabricating a multi-level semiconductor device involve a first interlayer dielectric (ILD) layer with one or more metal lines formed therein. A silicide is formed on a surface of the first ILD layer and is directly adjacent to each of the one or more metal lines on both sides of each of the one or more metal lines. A second ILD is formed above the silicide, and a via is formed through the second ILD above one of the one or more metal lines. One or more second metal lines are formed above the second ILD, one of which is formed in the via. The second metal line in the via contacts the one of the one or more metal lines and the silicide adjacent to the one of the one or more metal lines.

公开(公告)号：US20180061708A1

公开(公告)日：2018-03-01

申请号：US15251797

申请日：2016-08-30

Applicant: International Business Machines Corporation

Inventor： Benjamin D. Briggs ,  Elbert Huang ,  Takeshi Nogami ,  Christopher J. Penny

IPC: H01L21/768 ,  H01L21/321 ,  H01L21/3215 ,  H01L21/3115 ,  H01L23/532

CPC classification number: H01L21/76883 ,  H01L21/3115 ,  H01L21/321 ,  H01L21/3215 ,  H01L21/7682 ,  H01L21/76831 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76864 ,  H01L23/5222 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295

Abstract: An etch back air gap (EBAG) process is provided. The EBAG process includes forming an initial structure that includes a dielectric layer disposed on a substrate and a liner disposed to line a trench defined in the dielectric layer. The process further includes impregnating a metallic interconnect material with dopant materials, filling a remainder of the trench with the impregnated metallic interconnect materials to form an intermediate structure and drive-out annealing of the intermediate structure. The drive-out annealing of the intermediate structure serves to drive the dopant materials out of the impregnated metallic interconnect materials and thereby forms a chemical- and plasma- attack immune material.