公开(公告)号：US20180218909A1

公开(公告)日：2018-08-02

申请号：US15895664

申请日：2018-02-13

Applicant: International Business Machines Corporation ,  Tokyo Electron Limited

Inventor： Robert L. Bruce ,  Kevin K. Chan ,  Sebastian U. Engelmann ,  Dario L. Goldfarb ,  Marinus Hopstaken ,  Mahmoud Khojasteh ,  George G. Totir ,  Hongwen Yan ,  Masahiro Yamazaki

IPC: H01L21/223 ,  H01L29/10 ,  H01L29/207 ,  H01L21/306

CPC classification number: H01L21/2233 ,  H01L21/02046 ,  H01L21/2236 ,  H01L21/30612 ,  H01L29/1029 ,  H01L29/207

Abstract: A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.

公开(公告)号：US20180218908A1

公开(公告)日：2018-08-02

申请号：US15895610

申请日：2018-02-13

Applicant: International Business Machines Corporation ,  Tokyo Electron Limited

Inventor： Robert L. Bruce ,  Kevin K. Chan ,  Sebastian U. Engelmann ,  Dario L. Goldfarb ,  Marinus Hopstaken ,  Mahmoud Khojasteh ,  George G. Totir ,  Hongwen Yan ,  Masahiro Yamazaki

IPC: H01L21/223 ,  H01L29/10 ,  H01L29/207 ,  H01L21/306

CPC classification number: H01L21/2233 ,  H01L21/02046 ,  H01L21/2236 ,  H01L21/30612 ,  H01L29/1029 ,  H01L29/207

Abstract: A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.

公开(公告)号：US20180218907A1

公开(公告)日：2018-08-02

申请号：US15419065

申请日：2017-01-30

Applicant: International Business Machines Corporation ,  Tokyo Electron Limited

Inventor： Robert L. Bruce ,  Kevin K Chan ,  Sebastian U. Engelmann ,  Dario L. Goldfarb ,  Marinus Hopstaken ,  Mahmoud Khojasteh ,  George G. Totir ,  Hongwen Yan ,  Masahiro Yamazaki

IPC: H01L21/223 ,  H01L21/306 ,  H01L29/207 ,  H01L29/10

CPC classification number: H01L21/2233 ,  H01L21/2236 ,  H01L21/30612 ,  H01L29/1029 ,  H01L29/207

Abstract: A gas is ionized into a plasma. A compound of a dopant is mixed into the plasma, forming a mixed plasma. Using a semiconductor device fabrication system, a layer of III-V material is exposed to the mixed plasma to dope the layer with the dopant up to a depth in the layer, forming a shallow doped portion of the layer. The depth of the dopant is controlled by a second layer of the dopant formed at the shallow doped portion of the layer. The second layer is exposed to a solution, where the solution is prepared to erode the dopant in the second layer at a first rate. After an elapsed period, the solution is removed from the second layer, wherein the elapsed period is insufficient to erode a total depth of the layer and the shallow doped portion by more than a tolerance erosion amount.

公开(公告)号：US09058976B2

公开(公告)日：2015-06-16

申请号：US13669627

申请日：2012-11-06

Applicant: International Business Machines Corporation

Inventor： Vishal Chhabra ,  Laertis Economikos ,  John A. Fitzsimmons ,  James Hannah ,  Mahmoud Khojasteh ,  Jennifer Muncy

IPC: H01L21/02 ,  C11D3/04 ,  C11D3/20 ,  C11D7/08 ,  C11D7/26 ,  C11D11/00

CPC classification number: H01L21/02057 ,  C11D3/042 ,  C11D3/2079 ,  C11D3/2086 ,  C11D7/08 ,  C11D7/265 ,  C11D7/267 ,  C11D11/0047

Abstract: Cleaning solutions and processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an acidic aqueous cleaning solution free of a fluorine containing compound, the acidic aqueous cleaning solution including at least one antioxidant and at least one non-oxidizing acid.

Abstract translation: 用于在制造过程中清洁半导体器件或半导体工具的清洁溶液和工艺通常包括使半导体器件或半导体工具与不含氟化合物的酸性含水清洁溶液接触，所述酸性含水清洁溶液包含至少一种抗氧化剂和至少一种抗氧化剂 非氧化性酸。

公开(公告)号：US20140256133A1

公开(公告)日：2014-09-11

申请号：US13786970

申请日：2013-03-06

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Vamsi Devarapalli ,  Colin J. Goyette ,  Michael R. Kennett ,  Mahmoud Khojasteh ,  Qinghuang Lin ,  James J. Steffes ,  Adam D. Ticknor ,  Wei-tsu Tseng

IPC: H01L21/02

CPC classification number: H01L21/02068 ,  H01L21/02074 ,  H01L21/76883

Abstract: A post metal chemical-mechanical planarization (CMP) cleaning process for advanced interconnect technology is provided. The process, which follows CMP, combines an acidic clean and a basic clean in sequence. The process can achieve a more than 60% reduction in CMP defects, such as polish residues, foreign materials, slurry abrasives, scratches, and hollow metal, relative to an all-basic clean process. The process also eliminates the circular ring defects that occur intermittently during roller brush cleans within a roller brush clean module.

Abstract translation: 提供了一种用于先进互连技术的后金属化学 - 机械平面化（CMP）清洁工艺。 遵循CMP的方法依次组合了酸性清洁剂和碱性清洁剂。 相对于全基础清洁工艺，该方法可以实现CMP缺陷的减少60％以上，例如抛光残渣，异物，浆料磨料，划痕和中空金属。 该过程还消除了在辊刷清洁模块内的辊刷清洁过程中间歇性发生的圆环缺陷。

公开(公告)号：US08647445B1

公开(公告)日：2014-02-11

申请号：US13669651

申请日：2012-11-06

Applicant: International Business Machines Corporation

Inventor： Vishal Chhabra ,  John A. Fitzsimmons ,  Mahmoud Khojasteh ,  Jennifer Muncy

IPC: B08B3/04

CPC classification number: H01L21/02057 ,  B24B53/017 ,  H01L21/02052

Abstract: Cleaning processes for cleaning semiconductor devices or semiconductor tooling during manufacture thereof generally include contacting the semiconductor devices or semiconductor tooling with an antioxidant to form an insoluble adduct followed by solubilizing the adduct with a basic aqueous cleaning solution.

Abstract translation: 在制造过程中清洁半导体器件或半导体工具的清洁方法通常包括使半导体器件或半导体工具与抗氧化剂接触以形成不溶性加合物，然后用碱性水性清洁溶液溶解加合物。