公开(公告)号：US07294586B2

公开(公告)日：2007-11-13

申请号：US11029375

申请日：2005-01-06

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

IPC分类号： H01L21/31

CPC分类号： H01L21/67115 ,  G03F7/0042 ,  G03F7/0392 ,  G03F7/38 ,  H01L21/0273 ,  H01L21/67109

摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

摘要翻译： 一种处理衬底的方法，包括在衬底上形成化学放大抗蚀剂膜，将能量束照射到化学放大抗蚀剂膜上以在其中形成潜像，对化学放大抗蚀剂膜进行热处理，加热处理为 以相对移动用于加热化学放大抗蚀剂膜的加热部分和形成在加热部分的下表面和化学放大抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流的加热部分的方式进行 。

公开(公告)号：US20070199579A1

公开(公告)日：2007-08-30

申请号：US11706992

申请日：2007-02-16

申请人： Kei Hayasaki ,  Eishi Shiobara ,  Shinichi Ito

发明人： Kei Hayasaki ,  Eishi Shiobara ,  Shinichi Ito

IPC分类号： C23G1/00 ,  B08B7/04 ,  B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67051

摘要： According to an aspect of the invention, there is provided a substrate treatment method including performing a treatment including intermittently supplying a cleaning fluid to a central area of a treatment substrate while continuously rotating the substrate, and continuously supplying a cleaning fluid to a peripheral area of the substrate, thereby treating the substrate so that a liquid film on the substrate monotonously increases from the central area to the peripheral area along with the rotation of the substrate and so that the central area substantially dries.

摘要翻译： 根据本发明的一个方面，提供了一种基板处理方法，包括进行处理，包括在连续旋转基板的同时向处理基板的中心区域间歇地供给清洗流体，并且将清洁流体连续供给到周边区域 从而处理衬底，使得衬底上的液膜随着衬底的旋转而从中心区域逐渐增加到周边区域，并且使得中心区域基本上变干。

公开(公告)号：US20070042297A1

公开(公告)日：2007-02-22

申请号：US11316898

申请日：2005-12-27

申请人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

IPC分类号： G03F7/26

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.

摘要翻译： 根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为 第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触 第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

公开(公告)号：US20070010028A1

公开(公告)日：2007-01-11

申请号：US11475125

申请日：2006-06-27

申请人： Takehiro Kondoh ,  Hisako Aoyama ,  Eishi Shiobara ,  Shinichi Ito

发明人： Takehiro Kondoh ,  Hisako Aoyama ,  Eishi Shiobara ,  Shinichi Ito

IPC分类号： G01N21/00

CPC分类号： G01N15/14 ,  G01N2015/1493

摘要： A method for qualifying a chemical solution is disclosed. This method (a) obtains the number of particles in a chemical solution for each size of the particles, and (b) predicts, for each size of the particles, the influence of the chemical solution on a device to be fabricated by using the chemical solution. The degree of influence of the chemical solution on the device is obtained by using the results of (a) and (b). The quality of the chemical solution is evaluated on the basis of the obtained result, and whether the chemical solution is good or bad is determined on the basis of the evaluation result. On the basis of the determination result, the chemical solution is qualified as a chemical solution for use in a fabrication step of the device.

摘要翻译： 公开了一种用于限定化学溶液的方法。 该方法（a）获得每种颗粒尺寸的化学溶液中的颗粒数，（b）对于每种尺寸的颗粒，预测化学溶液对通过使用化学品制造的装置的影响 解。 通过使用（a）和（b）的结果获得化学溶液对器件的影响程度。 基于获得的结果评价化学溶液的质量，根据评价结果确定化学溶液的好坏。 在确定结果的基础上，化学溶液被认定为用于装置的制造步骤中的化学溶液。

公开(公告)号：US20050130068A1

公开(公告)日：2005-06-16

申请号：US10992349

申请日：2004-11-19

申请人： Takehiro Kondoh ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kenji Chiba ,  Shinichi Ito

发明人： Takehiro Kondoh ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kenji Chiba ,  Shinichi Ito

IPC分类号： G03F7/40 ,  G03F7/00 ,  G03F7/20 ,  H01L21/00 ,  H01L21/027

CPC分类号： G03F7/40 ,  G03F7/405

摘要： A pattern forming method comprises forming a first resist pattern on a substrate, irradiating light on the first resist pattern, forming a resist film including a cross-linking material on the substrate and the first resist pattern, forming a second resist pattern including a cross-linking layer formed at an interface between the first resist pattern and the resist film by causing a cross-linking reaction at the interface, and irradiating light on the first resist pattern including setting an amount of the light irradiated on the first resist pattern such that a dimension of the second resist pattern is to be a predetermined dimension based on a previously prepared relationship between a difference between a dimension relating to the first resist pattern and a dimension relating to the second resist pattern and the amount of the light irradiated on the first resist pattern.

摘要翻译： 图案形成方法包括在基板上形成第一抗蚀剂图案，在第一抗蚀剂图案上照射光，在基板上形成包含交联材料的抗蚀剂膜和第一抗蚀剂图案，形成第二抗蚀剂图案， 通过在界面处引起交联反应而在第一抗蚀剂图案和抗蚀剂膜之间的界面处形成的连接层，并且对第一抗蚀剂图案照射光，包括设定照射在第一抗蚀剂图案上的光量，使得 基于与第一抗蚀剂图案有关的尺寸与第二抗蚀剂图案的尺寸之间的差异以及照射在第一抗蚀剂层上的光量，第二抗蚀剂图案的尺寸为预定尺寸 模式。

公开(公告)号：US20050118535A1

公开(公告)日：2005-06-02

申请号：US11029375

申请日：2005-01-06

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

IPC分类号： G03F7/38 ,  G03F7/004 ,  G03F7/40 ,  H01L21/00 ,  H01L21/027 ,  H01L21/469

CPC分类号： H01L21/67115 ,  G03F7/0042 ,  G03F7/0392 ,  G03F7/38 ,  H01L21/0273 ,  H01L21/67109

摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

摘要翻译： 一种处理衬底的方法，包括在衬底上形成化学放大抗蚀剂膜，将能量束照射到化学放大抗蚀剂膜上以在其中形成潜像，对化学放大抗蚀剂膜进行热处理，加热处理为 以相对移动用于加热化学放大抗蚀剂膜的加热部分和形成在加热部分的下表面和化学放大抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流的加热部分的方式进行 。

公开(公告)号：US20080064226A1

公开(公告)日：2008-03-13

申请号：US11976499

申请日：2007-10-25

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara

IPC分类号： H01L21/31

CPC分类号： H01L21/67115 ,  G03F7/0042 ,  G03F7/0392 ,  G03F7/38 ,  H01L21/0273 ,  H01L21/67109

摘要： A method of processing a substrate, comprising forming a chemically amplified resist film on a substrate, irradiating energy beams to the chemically amplified resist film to form a latent image therein, carrying out heat treatment with respect to the chemically amplified resist film, heating treatment being carried out in a manner of relatively moving a heating section for heating the chemically amplified resist film and the substrate forming a gas stream flowing reverse to the relatively moving direction of the heating section between the lower surface of the heating section and the chemically amplified resist film.

摘要翻译： 一种处理衬底的方法，包括在衬底上形成化学放大抗蚀剂膜，将能量束照射到化学放大抗蚀剂膜上以在其中形成潜像，对化学放大抗蚀剂膜进行热处理，加热处理为 以相对移动用于加热化学放大抗蚀剂膜的加热部分和形成在加热部分的下表面和化学放大抗蚀剂膜之间形成与加热部分的相对移动方向相反的方向流动的气流的加热部分的方式进行 。

公开(公告)号：US07005249B2

公开(公告)日：2006-02-28

申请号：US11030064

申请日：2005-01-07

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

IPC分类号： G03C5/00

CPC分类号： H01L21/6715 ,  B05C5/0254 ,  B05C11/08 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/38 ,  G03F7/70358 ,  G03F7/70558 ,  H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

公开(公告)号：US07005238B2

公开(公告)日：2006-02-28

申请号：US11030135

申请日：2005-01-07

申请人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

发明人： Kenji Kawano ,  Shinichi Ito ,  Eishi Shiobara ,  Daisuke Kawamura ,  Kei Hayasaki

IPC分类号： G03C5/00

CPC分类号： H01L21/6715 ,  B05C5/0254 ,  B05C11/08 ,  G03F7/168 ,  G03F7/3021 ,  G03F7/38 ,  G03F7/70358 ,  G03F7/70558 ,  H01L21/67109 ,  H01L21/67115

摘要： A heating apparatus for a substrate to be processed with a coating film has a chamber with an inner space, a heating plate heating the substrate to be processed in the inner space, and a partition member. The heating plate has a support surface which supports the substrate to be processed within the chamber. The partition member is arranged in the chamber so as to face the support surface. The partition member partitions the inner space into first and second spaces, and has a plurality of pores which allow the first and second spaces to communicate with each other. The support surface of the heating plate is set in the first space. An air stream formation mechanism forming an air stream is arranged in the second space. This mechanism discharges a substance evaporated from the photoresist film.

公开(公告)号：US20050244979A1

公开(公告)日：2005-11-03

申请号：US11105362

申请日：2005-04-14

申请人： Shinichi Ito ,  Eishi Shiobara

发明人： Shinichi Ito ,  Eishi Shiobara

IPC分类号： G01N15/02 ,  G01N15/00 ,  G01N27/00 ,  G03F7/26 ,  H01L21/00 ,  H01L21/027 ,  H01L21/304 ,  H01L21/31 ,  H01L21/66

CPC分类号： G01N15/02 ,  G01N2015/0053 ,  Y10T436/25 ,  Y10T436/2575

摘要： A method for evaluating chemical solution includes determining number of particles in liquid for each size of the particles by measurement, expressing a relationship between size of the particles and number of particles corresponding to the size by a function based on the number of particles for each size of the particles determined by the measurement, and evaluating influence of particles having size less than or equal to a measurement limit in the liquid based on the function.

摘要翻译： 用于评估化学溶液的方法包括通过测量确定每种尺寸的颗粒的液体中的颗粒数量，通过基于每种尺寸的颗粒数量来表示颗粒尺寸与颗粒尺寸之间的关系与基于颗粒数的函数关系 通过测量确定的颗粒，并且基于该功能评估液体中尺寸小于或等于测量极限的颗粒的影响。