公开(公告)号：US20170315415A1

公开(公告)日：2017-11-02

申请号：US15498551

申请日：2017-04-27

Applicant: InnoLux Corporation

Inventor： Yung-Shun YANG ,  Chun-Liang LIN ,  Yi-Ching CHEN ,  Nai-Fang HSU

IPC: G02F1/1362 ,  G02F1/1343 ,  G02F1/1335 ,  H01L27/12 ,  G02F1/1368

CPC classification number: G02F1/136286 ,  G02F1/133512 ,  G02F1/133514 ,  G02F1/133707 ,  G02F1/134309 ,  G02F1/1368 ,  G02F2201/40 ,  H01L27/124

Abstract: A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines, wherein the scan lines intersects with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode having a slit substantially parallel to the data lines. The pixel units include a second electrode and a switching transistor. The switching transistor includes a gate electrode connecting to one of the scan lines. The gate electrode has a first edge substantially parallel to the extending direction of the scan lines. The switching transistor includes a drain electrode electrically connected to one of the first electrode and the second electrode. The drain electrode includes an extending portion which extends toward the slit and extends away from an extending line of the first edge. The drain electrode and the slit have an overlapping region.

公开(公告)号：US20230359097A1

公开(公告)日：2023-11-09

申请号：US18216182

申请日：2023-06-29

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Kuan-Feng LEE ,  Nai-Fang HSU

IPC: G02F1/1368 ,  G02F1/1345 ,  G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/13454 ,  G02F1/136209 ,  G02F1/13624 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/1251 ,  G02F1/13685 ,  G02F2202/104 ,  H01L29/78675

Abstract: A substrate assembly includes: a substrate; a first transistor disposed on the substrate, wherein the first transistor includes a first semiconductor layer and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the substrate, wherein the second transistor includes a second semiconductor layer and a drain electrode electrically connected to the second semiconductor layer, and the second semiconductor layer is an oxide semiconductor layer, wherein the first semiconductor layer of the first transistor is electrically insulated from the drain electrode of the second transistor.

公开(公告)号：US20230350251A1

公开(公告)日：2023-11-02

申请号：US18336286

申请日：2023-06-16

Applicant: InnoLux Corporation

Inventor： Yung-Shun YANG ,  Chun-Liang LIN ,  Yi-Ching CHEN ,  Nai-Fang HSU

IPC: G02F1/1362 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1335

CPC classification number: G02F1/136286 ,  G02F1/1368 ,  G02F1/134309 ,  G02F1/133512 ,  H01L27/124

Abstract: A transistor substrate is provided. The transistor substrate includes a first electrode and a second electrode. The first electrode has a slit. The slit includes a curved portion. The first electrode is used for receiving a common voltage signal. The second electrode overlaps the first electrode. The second electrode and the curved portion of the slit have an overlapping region, and an area of the overlapping region is 0.2 times to 0.8 times an area of the curved portion.

公开(公告)号：US20230261005A1

公开(公告)日：2023-08-17

申请号：US18139493

申请日：2023-04-26

Applicant: InnoLux Corporation

Inventor： CHANDRA LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  G06F3/041 ,  H10K59/40 ,  H10K59/131 ,  G02F1/1333 ,  G02F1/1343 ,  H01L29/24 ,  H01L29/423 ,  H01L29/786 ,  G02F1/1368

CPC classification number: H01L27/1225 ,  G06F3/0412 ,  H10K59/40 ,  H10K59/131 ,  G02F1/133345 ,  G02F1/13338 ,  G02F1/134309 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1251 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78648 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696 ,  G02F1/1368 ,  H01L27/1248 ,  H01L27/1255 ,  G02F1/13685 ,  G02F1/133388 ,  H10K59/1213

Abstract: An electronic device includes: a first substrate; a silicon semiconductor layer disposed on the first substrate; a first oxide semiconductor layer and a second oxide semiconductor layer disposed on the first substrate; a first conductive component disposed on the first substrate and electrically connected to the silicon semiconductor layer; and a second conductive component disposed on the first conductive component and electrically connected to at least one of the first oxide semiconductor layer and the second oxide semiconductor layer, wherein the second conductive component is at least partially overlapped with the first oxide semiconductor layer and the first conductive component.

公开(公告)号：US20220413348A1

公开(公告)日：2022-12-29

申请号：US17823570

申请日：2022-08-31

Applicant: InnoLux Corporation

Inventor： Yung-Shun YANG ,  Chun-Liang LIN ,  Yi-Ching CHEN ,  Nai-Fang HSU

IPC: G02F1/1362 ,  G02F1/1368 ,  G02F1/1343 ,  G02F1/1335

Abstract: A transistor substrate is provided. The transistor substrate includes a plurality of data lines and a plurality of scan lines. The scan lines intersect with the data lines to define a plurality of pixel units. One of the pixel units includes a first electrode, a second electrode and a switching transistor. The first electrode has a slit including a major axis portion and a curved portion connected to the major axis portion. One of the first electrode and the second electrode is used for receiving a pixel voltage signal, and the other is used for receiving a common voltage signal. The switching transistor includes a switching electrode. The switching electrode and the curved portion of the slit have an overlapping region, and an area of the overlapping region is 0.2 times to 0.8 times an area of the curved portion.

公开(公告)号：US20220085128A1

公开(公告)日：2022-03-17

申请号：US17535796

申请日：2021-11-26

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Kuanfeng LEE ,  Nai-Fang HSU

IPC: H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: A display device includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor including an oxide semiconductor; a first top gate electrode disposed above the first semiconductor; and a first drain electrode electrically connected to the first semiconductor, wherein the first drain electrode is electrically connected to the light emitting diode. The second transistor includes: a second semiconductor including a silicon semiconductor; two second top gate electrodes disposed above the second semiconductor; two second bottom gate electrodes disposed between the second semiconductor and the substrate; and a second drain electrode electrically connected to the second semiconductor, wherein the second drain electrode is electrically connected to the first top gate electrode of the first transistor.

公开(公告)号：US20210335837A1

公开(公告)日：2021-10-28

申请号：US17368381

申请日：2021-07-06

Applicant: INNOLUX CORPORATION

Inventor： Kuan-feng LEE ,  Chandra LIUS ,  Nai-Fang HSU

IPC: H01L27/12 ,  H01L21/02 ,  H01L29/24 ,  H01L29/49 ,  H01L29/51 ,  H01L29/66 ,  H01L29/786

Abstract: A display device having a substrate; a first thin film transistor (TFT) on the substrate, the first TFT having a first active layer, a first gate insulator, and a first gate electrode; a second TFT on the substrate, the second TFT having a second active layer, a second gate insulator and a second gate electrode. The first gate insulator is disposed between the first gate electrode and the first active layer, and the first gate insulator is in contact with the first active layer. The second gate insulator is disposed between the second gate electrode and the second active layer, and the second gate insulator is in contact with the second active layer. The first active layer is a different material than the second active layer, and a hydrogen concentration of the second gate insulator is less than a hydrogen concentration of the first gate insulator.

公开(公告)号：US20210255494A1

公开(公告)日：2021-08-19

申请号：US17230319

申请日：2021-04-14

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Kuan-Feng LEE ,  Nai-Fang HSU

IPC: G02F1/1368 ,  G02F1/1345 ,  G02F1/1362 ,  H01L27/12

Abstract: A display device includes: a substrate including a display region and a peripheral region, wherein the peripheral region is adjacent to the display region; a first transistor disposed on the peripheral region, wherein the first transistor includes a first semiconductor layer and the first semiconductor layer is a silicon semiconductor layer; and a second transistor disposed on the display region, wherein the second transistor includes a second semiconductor layer and the second semiconductor layer is an oxide semiconductor layer, wherein the first transistor is electrically connected to the second transistor.

公开(公告)号：US20170294497A1

公开(公告)日：2017-10-12

申请号：US15441329

申请日：2017-02-24

Applicant: InnoLux Corporation

Inventor： Chandra LIUS ,  Kuanfeng LEE ,  Nai-Fang HSU

IPC: H01L27/32

CPC classification number: H01L27/3262 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/3248 ,  H01L27/3272 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/78672 ,  H01L29/7869 ,  H01L29/78696

Abstract: A display device is disclosed, which includes: a substrate; a light emitting diode disposed above the substrate; a first transistor disposed above the substrate; and a second transistor disposed above the substrate. The first transistor includes: a first semiconductor layer; a first top gate electrode disposed above the first semiconductor layer; a first bottom gate electrode disposed under the first semiconductor layer; a first source electrode electrically connected to the first semiconductor layer; and a first drain electrode electrically connected to the first semiconductor layer, wherein the first drain electrode is electrically connected to the light emitting diode. In addition, the second transistor includes: a second semiconductor layer. Herein, one of the first semiconductor layer and the second semiconductor layer includes a first silicon semiconductor layer, and the other includes a first oxide semiconductor layer.