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21.发明授权公开(公告)号：US11300876B2
公开(公告)日：2022-04-12
申请号：US16446732
申请日：2019-06-20
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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22.发明授权公开(公告)号：US11187986B2
公开(公告)日：2021-11-30
申请号：US16810924
申请日：2020-03-06
Applicant: Inpria Corporation
Inventor： Mollie Waller , Brian J. Cardineau , Kai Jiang , Alan J. Telecky , Stephen T. Meyers , Benjamin L. Clark
Abstract: Apparatuses and methods are described for removing edge bead on a wafer associated with a resist coating comprising a metal containing resist compositions. The methods can comprise applying a first bead edge rinse solution along a wafer edge following spin coating of the wafer with the metal based resist composition, wherein the edge bead solution comprises an organic solvent and an additive comprising a carboxylic acid, an inorganic fluorinated acid, a tetraalkylammonium compound, or a mixture thereof. Alternatively or additionally, the methods can comprise applying a protective composition to the wafer prior to performing an edge bead rinse. The protective composition can be a sacrificial material or an anti-adhesion material and can be applied only to the wafer edge or across the entire wafer in the case of the protective composition. Corresponding apparatuses for processing the wafers using these methods are presented.
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公开(公告)号：US20210011383A1
公开(公告)日：2021-01-14
申请号：US16926125
申请日：2020-07-10
Applicant: Inpria Corporation
Inventor： Brian J. Cardineau , Shu-Hao Chang , Jason K. Stowers , Michael Kocsis , Peter de Schepper
Abstract: A method is described for stabilizing organometallic coating interfaces through the use of multilayer structures that incorporate an underlayer coating. The underlayer is composed of an organic polymer that has crosslinking and adhesion-promoting functional groups. The underlayer composition may include photoacid generators. Multilayer structures for patterning are described based on organometallic radiation sensitive patterning compositions, such as alkyl tin oxo hydroxo compositions, which are placed over a polymer underlayer.
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公开(公告)号：US20200257196A1
公开(公告)日：2020-08-13
申请号：US16861333
申请日：2020-04-29
Applicant: Inpria Corporation
Inventor： Stephen T. Meyers , Jeremy T. Anderson , Brian J. Cardineau , Joseph B. Edson , Kai Jiang , Douglas A. Keszler , Alan J. Telecky
Abstract: Organometallic precursors are described for the formation of high resolution lithography patterning coatings based on metal oxide hydroxide chemistry. The precursor compositions generally comprise ligands readily hydrolysable by water vapor or other OH source composition under modest conditions. The organometallic precursors generally comprise a radiation sensitive organo ligand to tin that can result in a coating that can be effective for high resolution patterning at relatively low radiation doses and is particularly useful for EUV patterning. The precursors compositions are readily processable under commercially suitable conditions. Solution phase processing with in situ hydrolysis or vapor based deposition can be used to form the coatings.
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25.发明申请公开(公告)号：US20190391486A1
公开(公告)日：2019-12-26
申请号：US16446732
申请日：2019-06-20
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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Patent Agency Ranking
公开(公告)号：US20250074930A1
公开(公告)日：2025-03-06
申请号：US18816097
申请日：2024-08-27
Applicant: Inpria Corporation
Inventor： Alexander C. Marwitz , Kai Jiang , Bryan T. Novas , Robert E. Jilek , Christopher J. Reed , Brian J. Cardineau , Munendra Yadav
Abstract: Organotin patterning compositions have radiation sensitive ligands with acetal functional groups. Precursor compositions are compositions comprising (OR4)(OR3)R2CR1SnL3, where the R groups are substituted or unsubstituted hydrocarbyl groups and L is a hydrolysable ligand. The precursors can be formed into coating that can be patterned with radiation, in particular EUV radiation. Coatings formed with blended precursors with hydrocarbyl-based ligands with some having acetal groups and others lacking acetal groups can be particularly effective for improving positive tone patterning.
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27.发明授权公开(公告)号：US12105418B2
公开(公告)日：2024-10-01
申请号：US18521779
申请日：2023-11-28
Applicant: Inpria Corporation
Inventor： Kai Jiang , Stephen T. Meyers , Lauren B. McQuade , Jeremy T. Anderson , Brian J. Cardineau , Benjamin L. Clark , Dominick Smiddy , Margaret Wilson-Moses
CPC classification number: G03F7/0043 , B05D1/005 , C08G79/12 , G03F7/168 , G03F7/20
Abstract: Precursor solutions for radiation patternable coatings are formed with an organic solvent and monoalkyl tin trialkoxides in which the water content of the solvent is adjusted to be within 10 percent of a selected value. Generally, the water content of the solvent is adjusted through water addition, although water removal can also be used. In some embodiments, the adjusted water content of the solvent can be from about 250 ppm by weight to about 10,000 ppm by weight. With the appropriate selection of ligands, the adjusted precursor solutions can be stable for at least about 42 days, and in some cases at least 8 months.
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公开(公告)号：US12071449B2
公开(公告)日：2024-08-27
申请号：US17840844
申请日：2022-06-15
Applicant: Inpria Corporation
Inventor： Brian J. Cardineau , William Earley , Stephen T. Meyers , Kai Jiang , Jeremy T. Anderson
CPC classification number: C07F7/2224 , G03F7/0042 , G03F7/2004
Abstract: Patterning compositions are described based on organo tin dodecamers with hydrocarbyl ligands, oxo ligands, hydroxo ligands and carboxylato ligands. Alternative dodecamer embodiments have organo tin ligands in place of hydrocarbyl ligands. The organo tin ligands can be incorporated into the dodecamers from a monomer with the structure (RCC)3SnQ, where R is a hydrocarbyl group and Q is a alkyl tin moiety with a carbon bonded to the Sn atom of the monomer and with a Sn bonded as a replacement of a quaternary carbon atom with bonds to 4 carbon atoms. Some or all of the carboxylato and hydroxyl ligands can be replaced with fluoride ions. Good EUV patterning results are obtained with the dodecamer based patterning compositions.
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29.发明公开公开(公告)号：US20240085785A1
公开(公告)日：2024-03-14
申请号：US18233932
申请日：2023-08-15
Applicant: Inpria Corporation , JSR Corporation
Inventor： Kazuki Kasahara , Brian J. Cardineau , Kai Jiang , Stephen T. Meyers , Amrit N. Narasimhan , Matthew Voss
IPC: G03F7/004
CPC classification number: G03F7/0044 , G03F7/0045 , G03F7/38
Abstract: A method for patterning a radiation sensitive material on a substrate involves the development of a material on a substrate based on a latent image in the material with irradiated regions and non-irradiated regions to form a physically patterned material on the substrate, in which the material comprises an organotin radiation sensitive patterning material and an additive. The additive is a photoacid generator, a quencher or a mixture thereof. Patterning improvements can be achieved using a series of a baking and development step followed by a second baking at a higher temperature and a second development step following the second baking step. A precursor solution for forming an organometallic radiation patterning material can comprise an organic solvent, a dissolved organotin composition having C—Sn bonds that can cleave in response to EUV radiation, and a quencher. The additive can comprise an onium cation.
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30.发明公开公开(公告)号：US20230374338A1
公开(公告)日：2023-11-23
申请号：US18198360
申请日：2023-05-17
Applicant: Inpria Corporation
Inventor： Robert E. Jilek , Brian J. Cardineau , Lucy Su Xiao Huffman , Stephen T. Meyers
IPC: C09D171/00
CPC classification number: C09D171/00
Abstract: Organotin compositions having the formula RSnL3 and corresponding synthetic methods are described. R includes aromatic, cyclic and/or halogenated ether moieties, or polyethers, and L includes hydrolysable groups. The organotin compositions may be formed as radiation-patternable coatings on substrates. The coatings may have an average thickness from about 1 nm to about 75 nm and have the formula RSnOn(OH)3-2n, forming an oxo-hydroxo network, where R is a hydrocarbyl ether group with 1 to 30 carbon atoms and 0
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