公开(公告)号：US20200043978A1

公开(公告)日：2020-02-06

申请号：US16051457

申请日：2018-07-31

申请人： International Business Machines Corporation

发明人： Cezar Bogdan Zota ,  Bernd W. Gotsmann

IPC分类号： H01L27/22 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H03F15/00 ,  H03K19/18

摘要： A magnetic field controlled transistor circuit includes a first electrode, a second electrode, and a channel including a magneto-resistive material. The channel is arranged between the first and second electrodes and electrically coupled to the first and second electrodes. The transistor circuit further includes a third electrode, a fourth electrode, and a control layer including an electrically conductive material. The control layer is arranged between the third and fourth electrodes and electrically coupled to the third and fourth electrodes. In addition, an insulating layer including an insulating material is provided. The insulating layer is arranged between the channel and the control layer and configured to electrically insulate the channel from the control layer. A related method for operating a transistor circuit and a corresponding design structure are also provided.

公开(公告)号：US09676890B2

公开(公告)日：2017-06-13

申请号：US14918693

申请日：2015-10-21

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Urs T. Duerig ,  Bernd W. Gotsmann ,  Armin W. Knoll ,  David S. Pires

IPC分类号： B32B3/02 ,  C08G8/28 ,  B82Y10/00 ,  G11B9/14 ,  G11B11/00 ,  C08G73/10

CPC分类号： C08G8/28 ,  B82Y10/00 ,  C08G73/10 ,  G11B9/14 ,  G11B9/1472 ,  G11B9/149 ,  G11B11/007 ,  Y10T428/21 ,  Y10T428/24355 ,  Y10T428/24612 ,  Y10T428/265 ,  Y10T428/31623 ,  Y10T428/31721

摘要： A local probe storage array is provided that includes a substrate, and a polymeric layer over the substrate, the polymeric layer comprising a crosslinking agent comprising at least three alkyne groups.

公开(公告)号：US09547819B1

公开(公告)日：2017-01-17

申请号：US14948577

申请日：2015-11-23

申请人： International Business Machines Corporation

发明人： Bernd W. Gotsmann ,  Siegfried F. Karg ,  Volker Schmidt

IPC分类号： G06N3/063

CPC分类号： G06N3/0635 ,  G06N3/049

摘要： A synapse for a neuromorphic network is provided. The synapse includes a time-delay portion having a first end and a second end, a first actuator located at the first end and in operational contact with the time-delay portion, and a second actuator located at the second end and in operational contact with the time-delay portion. The time-delay portion is formed from a phase change material wherein a change in the material of the time-delay portion alters a propagation time of a signal transmitted from the first actuator to the second actuator.

摘要翻译： 提供神经元网络的突触。 突触包括具有第一端和第二端的延时部分，位于第一端处的第一致动器和与延时部分操作接触的第一致动器，以及位于第二端处并与其操作接触的第二致动器 延时部分。 时延部分由相变材料形成，其中延时部分的材料的变化改变从第一致动器传递到第二致动器的信号的传播时间。

公开(公告)号：US09384975B2

公开(公告)日：2016-07-05

申请号：US14596399

申请日：2015-01-14

申请人： International Business Machines Corporation

发明人： Bernd W. Gotsmann ,  Siegfried F. Karg ,  Heike E. Riel

IPC分类号： H01L21/20 ,  H01L21/02 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786 ,  B82Y40/00

CPC分类号： H01L21/02603 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/0262 ,  H01L21/02667 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/1054 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/775 ,  H01L29/78687 ,  H01L29/78696

摘要： A method of forming nanowire devices. The method includes forming a stressor layer circumferentially surrounding a semiconductor nanowire. The method is performed such that, due to the stressor layer, the nanowire is subjected to at least one of radial and longitudinal strain to enhance carrier mobility in the nanowire. Radial and longitudinal strain components can be used separately or together and can each be made tensile or compressive, allowing formulation of desired strain characteristics for enhanced conductivity in the nanowire of a given device.