公开(公告)号：US20160099684A1

公开(公告)日：2016-04-07

申请号：US14121664

申请日：2014-10-06

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Lu Han ,  Chunong Qiu ,  Ishiang Shih

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Lu Han ,  Chunong Qiu ,  Ishiang Shih

IPC分类号： H03F1/02 ,  H03K3/012 ,  H03F3/195 ,  H01L29/20 ,  H03F3/213

CPC分类号： H03F1/0205 ,  H01L21/8258 ,  H01L27/0688 ,  H01L29/2003 ,  H01L29/76 ,  H03F3/195 ,  H03F3/213 ,  H03F2200/451 ,  H03K3/012

摘要： One object of this invention is to provide a structure of integrated power transistor device having low thermal budget metal oxynitrides as the active channel on a CMOS logic and control circuit chip to form an integrated intelligent power switching module for power switching. The other object of this invention is to provide a structure of integrated power amplifier transistor device having low thermal budget metal oxynitride active channel layer on a CMOS logic and control circuit chip to form an integrated intelligent microwave power amplifier for RF power amplification.

摘要翻译： 本发明的一个目的是提供一种集成功率晶体管器件的结构，其具有低热量预算金属氮氧化物作为CMOS逻辑和控制电路芯片上的有源沟道，以形成用于功率开关的集成智能功率开关模块。 本发明的另一个目的是提供一种在CMOS逻辑和控制电路芯片上具有低热预算金属氧氮化物有源沟道层的集成功率放大器晶体管器件的结构，以形成用于RF功率放大的集成智能微波功率放大器。

公开(公告)号：US20150372096A1

公开(公告)日：2015-12-24

申请号：US14120716

申请日：2014-06-20

申请人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qiu ,  Yi-Chi Shih

IPC分类号： H01L29/20 ,  H01L29/778 ,  H01L29/205 ,  H01L27/06

CPC分类号： H01L29/2003 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02664 ,  H01L21/0274 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/8252 ,  H01L27/0203 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0843 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/13064

摘要： High mobility transistors and microwave integrated circuits with an improved uniformity of the width of the smallest of features, an increased lithographic yield and reduced defects in the active components are provided. Before and during fabrication, a first grooving process is performed to partially or completely remove composite epitaxial layers in the field lanes to reduce the initial bow to be smaller than DOF range and to improve the uniformity of the critical dimension. A second grooving process may also be performed to remove composite epitaxial layers in the dicing lanes to further improve the uniformity of the width of the smallest features for the devices and circuits to be made.

摘要翻译： 提供了高移动性晶体管和微波集成电路，其具有改进的最小特征的宽度的均匀性，增加的平版印刷产量和减少的有源部件中的缺陷。 在制造之前和期间，执行第一个开槽过程以部分地或完全地去除现场通道中的复合外延层，以将初始弓缩小到小于DOF范围并提高临界尺寸的均匀性。 还可以执行第二个切槽工艺以去除切割通道中的复合外延层，以进一步提高要制造的器件和电路的最小特征的宽度的均匀性。

公开(公告)号：US09799686B2

公开(公告)日：2017-10-24

申请号：US13987832

申请日：2013-09-09

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L21/02 ,  H01L21/4757 ,  H01L21/4763 ,  H01L49/02 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

公开(公告)号：US20150263116A1

公开(公告)日：2015-09-17

申请号：US13999623

申请日：2014-03-14

申请人： Chunong Qiu ,  Jay-Hsing Wu ,  Cindy X. Qiu ,  Yi-Chi Shih ,  Ishiang Shih

发明人： Chunong Qiu ,  Jay-Hsing Wu ,  Cindy X. Qiu ,  Yi-Chi Shih ,  Ishiang Shih

IPC分类号： H01L29/423 ,  H01L29/778

CPC分类号： H01L29/7783 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/475

摘要： The present invention is related to high electron mobility transistors for power switching and microwave amplification and switching. More specifically, it related to a high electron mobility transistor with an improved gate to enhance the performance. When fabricating a high electron mobility thin film transistors, a first gate metal layer made of chromium alloy or tungsten alloy is deposited to reduce surface traps and to enhance the stability and integrity of the gates.

摘要翻译： 本发明涉及用于功率开关和微波放大和切换的高电子迁移率晶体管。 更具体地，它涉及具有改进的栅极以提高性能的高电子迁移率晶体管。 当制造高电子迁移率薄膜晶体管时，沉积由铬合金或钨合金制成的第一栅极金属层以减少表面陷阱并提高栅极的稳定性和完整性。

公开(公告)号：US20150069514A1

公开(公告)日：2015-03-12

申请号：US13987832

申请日：2013-09-09

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

摘要翻译： 提供具有薄膜晶体管的MMIC电路，而不需要在制作有源和无源部件之后对衬底进行研磨和蚀刻。 此外，还提供了基于无毒化合物半导体的有源器件技术。 无衬底研磨/蚀刻的MMIC方法和结构的成功以及无活性组分的无毒元素的半导体的使用将减少制造时间，降低经济成本和环境负担。 提供了MMIC结构，其中对芯片或芯片附接，对准和引线键合的要求被完全消除或最小化。 这将增加MMIC电路和模块的再现性并缩短制造时间。

公开(公告)号：US09048305B2

公开(公告)日：2015-06-02

申请号：US13998210

申请日：2013-10-15

申请人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qiu ,  Yi-Chi Shih

IPC分类号： H01L29/66 ,  H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/2003

摘要： In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's. Those microcracks will bring about an increase in source to drain resistance and lead to performance and reliability degradation of the HEMTs and the MMICs containing them. The present invention provides HEMTs with minimized effects of the unwanted microcracks by aligning the channel region long axis to a certain direction so that the channel region long axis forms a right angle with axis of at least one type of the microcracks.

摘要翻译： 在基于III族氮化物外延膜或GaAs，AlGaAs和InGaAs外延膜的HEMT中，在制造和操作期间通常在沟道区域中的复合外延层中形成不期望的微裂纹。 这些微裂纹是由于材料和衬底之间的晶格失配和热膨胀系数差异引起的应变或应力引起的。 这些微裂纹将引起源极漏极阻抗的增加，并导致HEMT和包含它们的MMIC的性能和可靠性降级。 本发明通过将沟道区域长轴对准某一方向，使得沟道区域长轴与至少一种类型的微裂纹的轴线成直角，从而为HEMT提供了不需要的微裂纹的最小化效果。

公开(公告)号：US20100301340A1

公开(公告)日：2010-12-02

申请号：US12455290

申请日：2009-06-01

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/088 ,  H01L29/786

CPC分类号： H01L29/78609 ,  H01L29/4908

摘要： Thin film transistors and arrays having controlled threshold voltage and improved ION/IOFF ratio are provided in this invention. In one embodiment, a thin film transistor having a first gate insulator of high breakdown field with positive fixed charges and a second gate insulator with negative fixed charges is provided; said negative fixed charges substantially compensate said positive fixed charges in order to reduce threshold voltage and OFF state threshold voltage of said transistor. In another embodiment, a thin film transistor having a first passivation layer with negative fixed charges is provided, the negative charges reduce substantially unwanted negative charges in the adjacent active channel and hence reduce the OFF state current and increase ION/IOFF ratio, which in turn reduce the threshold voltage of the transistor.

摘要翻译： 在本发明中提供具有受控阈值电压和改善的ION / IOFF比的薄膜晶体管和阵列。 在一个实施例中，提供具有具有正固定电荷的高击穿场的第一栅极绝缘体和具有负固定电荷的第二栅极绝缘体的薄膜晶体管; 所述负固定电荷基本上补偿所述正固定电荷，以便降低所述晶体管的阈值电压和OFF状态阈值电压。 在另一个实施例中，提供了具有负固定电荷的第一钝化层的薄膜晶体管，负电荷在相邻的有源沟道中减少了基本上不需要的负电荷，并因此降低了关闭状态电流并增加了ION / IOFF比， 降低晶体管的阈值电压。

公开(公告)号：US09437626B2

公开(公告)日：2016-09-06

申请号：US14756093

申请日：2015-08-03

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L21/02 ,  H01L21/4757 ,  H01L21/4763 ,  H01L49/02 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

公开(公告)号：US20100301343A1

公开(公告)日：2010-12-02

申请号：US12455286

申请日：2009-06-01

申请人： Cindy X. Qiu ,  Yi-Chi Shih ,  Chunong Qiu ,  Ishiang Shih

发明人： Cindy X. Qiu ,  Yi-Chi Shih ,  Chunong Qiu ,  Ishiang Shih

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： Thin film transistors and circuits having improved mobility and stability are disclosed in this invention to have metal oxynitrides as the active channel layers. In one embodiment, the charge carrier mobility in the thin film transistors is increased by using the metal oxynitrides as the active channel layers. In another embodiment, a thin film transistor having a p-type metal oxynitride active channel layer and a thin film transistor having an n-type metal oxynitride active channel layer are fabricated to forming a CMOS circuit. In yet another embodiment, thin film transistor circuits having metal oxynitrides as the active channel layers are provided.

摘要翻译： 在本发明中公开了具有改善的迁移率和稳定性的薄膜晶体管和电路，以使金属氧氮化物作为有源沟道层。 在一个实施例中，通过使用金属氧氮化物作为有源沟道层来增加薄膜晶体管中的载流子迁移率。 在另一个实施例中，制造具有p型金属氧氮化物有源沟道层的薄膜晶体管和具有n型金属氮氧化物有源沟道层的薄膜晶体管，以形成CMOS电路。 在又一个实施例中，提供了具有金属氧氮化物作为有源沟道层的薄膜晶体管电路。

公开(公告)号：US20150102387A1

公开(公告)日：2015-04-16

申请号：US13998210

申请日：2013-10-15

申请人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qiu ,  Yi-Chi Shih

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/045 ,  H01L29/2003

摘要： In HEMTs based on III-nitrides epitaxial films or GaAs, AlGaAs and InGaAs epitaxial films, unwanted microcracks are often formed in the composite epitaxial layers in the channel region during fabrication and operation. These microcracks are caused by strain or stresses due to lattice mismatch and thermal expansion coefficient differences between materials and substrate's. Those microcracks will bring about an increase in source to drain resistance and lead to performance and reliability degradation of the HEMTs and the MMICs containing them. The present invention provides HEMTs with minimized effects of the unwanted microcracks by aligning the channel region long axis to a certain direction so that the channel region long axis forms a right angle with axis of at least one type of the microcracks.

摘要翻译： 在基于III族氮化物外延膜或GaAs，AlGaAs和InGaAs外延膜的HEMT中，在制造和操作期间通常在沟道区域中的复合外延层中形成不期望的微裂纹。 这些微裂纹是由于材料和衬底之间的晶格失配和热膨胀系数差异引起的应变或应力引起的。 这些微裂纹将引起源极漏极阻抗的增加，并导致HEMT和包含它们的MMIC的性能和可靠性降级。 本发明通过将沟道区域长轴对准某一方向，使得沟道区域长轴与至少一种类型的微裂纹的轴线成直角，从而为HEMT提供了不需要的微裂纹的最小化效果。