公开(公告)号：US09799686B2

公开(公告)日：2017-10-24

申请号：US13987832

申请日：2013-09-09

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84 ,  H01L27/12 ,  H01L29/423 ,  H01L21/02 ,  H01L21/4757 ,  H01L21/4763 ,  H01L49/02 ,  H01L29/24 ,  H01L29/66

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

公开(公告)号：US20160225915A1

公开(公告)日：2016-08-04

申请号：US14544652

申请日：2015-01-30

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/786 ,  H01L29/49 ,  H01L29/423 ,  H01L29/24

CPC分类号： H01L29/78696 ,  H01L29/1054 ,  H01L29/24 ,  H01L29/423 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/4908 ,  H01L29/78609 ,  H01L29/7869

摘要： Transistors with a first metal oxynitride channel layer and a second metal oxynitride barrier layer are provided. The first metal oxynitride channel layer is lightly doped or without intentional doping to achieve high carrier mobility. Impurity atoms are introduced into the second metal oxynitride barrier layer and the donated carriers migrate or drift into the first metal oxynitride channel layer to effect high mobility conduction between source and drain.

摘要翻译： 提供具有第一金属氧氮化物沟道层和第二金属氮氧化物阻挡层的晶体管。 第一金属氧氮化物沟道层被轻掺杂或没有有意掺杂以实现高载流子迁移率。 杂质原子被引入到第二金属氧氮化物阻挡层中，并且所捐赠的载流子迁移或漂移到第一金属氧氮化物沟道层中以实现源极和漏极之间的高迁移率传导。

公开(公告)号：US09324884B1

公开(公告)日：2016-04-26

申请号：US14544752

申请日：2015-02-12

申请人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/51 ,  H01L29/861 ,  H01L29/24 ,  H01L29/45 ,  H01L29/06 ,  H01L23/31 ,  H01L23/29

CPC分类号： H01L29/861 ,  H01L23/291 ,  H01L23/3171 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66969 ,  H01L2924/0002 ,  H01L2924/00

摘要： Metal oxynitride diodes having at least a first metal oxynitride layer of a first conduction type and a second metal oxynitride layer of a second conduction type are provided. The first oxynitride layer is selectively doped or un-intentionally doped and have high carrier mobility. The second oxynitride layer is also selectively doped or un-intentionally doped and have high carrier mobility. A compensated oxynitride drift layer having a low carrier density may be adopted to increase the breakdown voltage of the device.

摘要翻译： 提供具有至少第一导电类型的第一金属氧氮化物层和第二导电类型的第二金属氧氮化物层的金属氧氮化物二极管。 第一氧氮化物层是选择性掺杂的或非有意掺杂的并且具有高载流子迁移率。 第二氧氮化物层也是选择性掺杂或非有意掺杂的并且具有高载流子迁移率。 可以采用具有低载流子密度的补偿氮氧化物漂移层来增加器件的击穿电压。

公开(公告)号：US20150263116A1

公开(公告)日：2015-09-17

申请号：US13999623

申请日：2014-03-14

申请人： Chunong Qiu ,  Jay-Hsing Wu ,  Cindy X. Qiu ,  Yi-Chi Shih ,  Ishiang Shih

发明人： Chunong Qiu ,  Jay-Hsing Wu ,  Cindy X. Qiu ,  Yi-Chi Shih ,  Ishiang Shih

IPC分类号： H01L29/423 ,  H01L29/778

CPC分类号： H01L29/7783 ,  H01L21/28581 ,  H01L21/28587 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/475

摘要： The present invention is related to high electron mobility transistors for power switching and microwave amplification and switching. More specifically, it related to a high electron mobility transistor with an improved gate to enhance the performance. When fabricating a high electron mobility thin film transistors, a first gate metal layer made of chromium alloy or tungsten alloy is deposited to reduce surface traps and to enhance the stability and integrity of the gates.

摘要翻译： 本发明涉及用于功率开关和微波放大和切换的高电子迁移率晶体管。 更具体地，它涉及具有改进的栅极以提高性能的高电子迁移率晶体管。 当制造高电子迁移率薄膜晶体管时，沉积由铬合金或钨合金制成的第一栅极金属层以减少表面陷阱并提高栅极的稳定性和完整性。

公开(公告)号：US20150069514A1

公开(公告)日：2015-03-12

申请号：US13987832

申请日：2013-09-09

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Yi-Chi Shih

IPC分类号： H01L27/13 ,  H01L21/84

CPC分类号： H01L27/1259 ,  H01L21/02565 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L28/20 ,  H01L28/40 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66969

摘要： MMIC circuits with thin film transistors are provided without the need of grinding and etching of the substrate after the fabrication of active and passive components. Furthermore, technology for active devices based on non-toxic compound semiconductors is provided. The success in the MMIC methods and structures without substrate grinding/etching and the use of semiconductors without toxic elements for active components will reduce manufacturing time, decrease economic cost and environmental burden. MMIC structures are provided where the requirements for die or chip attachment, alignment and wire bonding are eliminated completely or minimized. This will increase the reproducibility and reduce the manufacturing time for the MMIC circuits and modules.

摘要翻译： 提供具有薄膜晶体管的MMIC电路，而不需要在制作有源和无源部件之后对衬底进行研磨和蚀刻。 此外，还提供了基于无毒化合物半导体的有源器件技术。 无衬底研磨/蚀刻的MMIC方法和结构的成功以及无活性组分的无毒元素的半导体的使用将减少制造时间，降低经济成本和环境负担。 提供了MMIC结构，其中对芯片或芯片附接，对准和引线键合的要求被完全消除或最小化。 这将增加MMIC电路和模块的再现性并缩短制造时间。

公开(公告)号：US20200036364A1

公开(公告)日：2020-01-30

申请号：US15998270

申请日：2018-07-27

申请人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu ,  Andy Shih ,  Yi-Chi Shih

发明人： Cindy X. Qiu ,  Ishiang Shih ,  Chunong Qiu ,  Julia Qiu ,  Andy Shih ,  Yi-Chi Shih

IPC分类号： H03H9/64 ,  H03H9/02 ,  H03H9/145 ,  H03H9/25 ,  H03M1/66 ,  H01L41/107

摘要： Due to strong needs to reduce the dimensions and the cost of the RF filters and to reduce the number of filters required in an mobile handsets and wireless system covering numbers of operation bands, tunable RF filters which can cover as many bands or frequency ranges as possible are needed so that the number of filters can be reduced in the mobile handsets and wireless systems. The present invention provides tunable surface acoustic wave (SAW) IDT structures with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters (DACs). The DAC converts an input digital signal to an output DC voltage and provide DC bias voltages to the SAW IDTs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the SAW IDTs.

公开(公告)号：US20160308067A1

公开(公告)日：2016-10-20

申请号：US14545285

申请日：2015-04-17

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Chunong Qiu ,  Julia Qiu

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Andy Shih ,  Yi-Chi Shih ,  Chunong Qiu ,  Julia Qiu

IPC分类号： H01L29/786 ,  H01L29/423 ,  H01L29/417

CPC分类号： H01L29/78696 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/7869

摘要： A thin film transistor with a first metal oxynitride channel layer or a first metal oxide channel layer is provided to have controlled channel doping concentrations in a bottom surface region, a central channel region and a top surface region so that doping concentration ratios between the bottom surface region and the central channel region and between the top surface region and the central channel region are greater than a first threshold doping ratio and less than a second threshold doping ratio in order to retain more uniform charge carrier mobility values in the first channel layer and to improve the performance of the thin film transistor devices.

摘要翻译： 提供了具有第一金属氧氮化物沟道层或第一金属氧化物沟道层的薄膜晶体管，以在底表面区域，中心沟道区域和顶表面区域中具有受控的沟道掺杂浓度，使得底表面 区域和中心沟道区域之间以及顶表面区域和中心沟道区域之间的区域大于第一阈值掺杂比并且小于第二阈值掺杂比，以便在第一沟道层中保持更均匀的载流子迁移率值，并且 提高薄膜晶体管器件的性能。

公开(公告)号：US20150372096A1

公开(公告)日：2015-12-24

申请号：US14120716

申请日：2014-06-20

申请人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Chunong Qiu ,  Cindy X. Qiu ,  Yi-Chi Shih

IPC分类号： H01L29/20 ,  H01L29/778 ,  H01L29/205 ,  H01L27/06

CPC分类号： H01L29/2003 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02458 ,  H01L21/02463 ,  H01L21/02499 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02664 ,  H01L21/0274 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/8252 ,  H01L27/0203 ,  H01L27/0605 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/0843 ,  H01L29/66462 ,  H01L29/7783 ,  H01L2924/13064

摘要： High mobility transistors and microwave integrated circuits with an improved uniformity of the width of the smallest of features, an increased lithographic yield and reduced defects in the active components are provided. Before and during fabrication, a first grooving process is performed to partially or completely remove composite epitaxial layers in the field lanes to reduce the initial bow to be smaller than DOF range and to improve the uniformity of the critical dimension. A second grooving process may also be performed to remove composite epitaxial layers in the dicing lanes to further improve the uniformity of the width of the smallest features for the devices and circuits to be made.

摘要翻译： 提供了高移动性晶体管和微波集成电路，其具有改进的最小特征的宽度的均匀性，增加的平版印刷产量和减少的有源部件中的缺陷。 在制造之前和期间，执行第一个开槽过程以部分地或完全地去除现场通道中的复合外延层，以将初始弓缩小到小于DOF范围并提高临界尺寸的均匀性。 还可以执行第二个切槽工艺以去除切割通道中的复合外延层，以进一步提高要制造的器件和电路的最小特征的宽度的均匀性。

公开(公告)号：US10784840B2

公开(公告)日：2020-09-22

申请号：US15998066

申请日：2018-06-25

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

IPC分类号： H03H9/56 ,  H03H9/17 ,  H03H9/13 ,  H03H9/02

摘要： The present invention provides tunable film bulk acoustic resonators (FBARs) with the resonant frequency of the acoustic wave to be excited and to be transmitted tuned by digital to analog converters which convert an input digital signal to an output DC voltage and provide DC bias voltages to the FBARs through integrated thin film biasing resistors. The polarity and the value of the output DC voltage are controlled by the input digital signal to achieve selection and tuning of the resonant frequency of the FBARs. A plurality of the tunable FBARs are connected to form microwave filters with tunable bandpass frequencies and oscillators with selectable resonating frequencies by varying the input digital signals applied to the digital to analog converters.

公开(公告)号：US20200075778A1

公开(公告)日：2020-03-05

申请号：US15999949

申请日：2018-09-05

申请人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

发明人： Ishiang Shih ,  Cindy X. Qiu ,  Chunong Qiu ,  Andy Shih ,  Julia Qiu ,  Yi-Chi Shih

IPC分类号： H01L29/786 ,  H01L29/778 ,  H01L29/66

摘要： Structures of high electron mobility thin film transistors (HEM-TFTs) are provided in this invention. In one embodiment, HEM-TFTs with a single heterojunction structure are disclosed to have a substrate, a first metal oxide channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In another embodiment, HEM-TFTs with a double heterojunction structure are provided to have a substrate, a second barrier layer, a second doped layer, a second spacer layer, a first metal oxide channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate. In yet another embodiment, HEM-TFTs with a single heterojunction structure are disclosed to comprise a substrate, a first metal oxynitride channel layer, a first spacer layer, a first doped layer, a first barrier layer, a source, a drain and a gate. In still another embodiment, HEM-TFTs with a double heterojunction structure are provided to include a substrate, a first barrier layer, a first doped layer, a first spacer layer, a first metal oxynitride channel layer, a second spacer layer, a second doped layer, a second barrier layer, a source, a drain and a gate.