公开(公告)号：US06111300A

公开(公告)日：2000-08-29

申请号：US203445

申请日：1998-12-01

申请人： Min Cao ,  Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook

发明人： Min Cao ,  Paul J. Vande Voorde ,  Frederick A. Perner ,  Dietrich W. Vook

IPC分类号： H01L31/10 ,  H01L27/146 ,  H01L31/00 ,  H01L31/075 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L27/14609 ,  H01L27/14647

摘要： A color detection active pixel sensor. The color detection active pixel sensor includes a substrate. A diode is electrically connected to a first doped region of the substrate. The diode conducts charge when the diode receives photons having a first range of wavelengths. The substrate includes a second doped region. The second doped region conducts charge when receiving photons having a second range of wavelengths. The photons having the second range of wavelengths passing through the diode substantially undetected by the diode. The substrate can include a doped well within the substrate. The doped well conducts charge when receiving photons having a third range of wavelengths. The photons having the third range of wavelengths pass through the diode substantially undetected by the diode.

摘要翻译： 颜色检测有源像素传感器。 颜色检测有源像素传感器包括基板。 二极管电连接到衬底的第一掺杂区域。 当二极管接收具有第一波长范围的光子时，二极管导通电荷。 衬底包括第二掺杂区域。 当接收具有第二波长范围的光子时，第二掺杂区域传导电荷。 具有基本上不被二极管检测到的通过二极管的第二波长范围的光子。 衬底可以包括衬底内的掺杂阱。 当接收具有第三波长范围的光子时，掺杂阱导电。 具有第三波长范围的光子通过基本上不被二极管检测的二极管。

公开(公告)号：US6081465A

公开(公告)日：2000-06-27

申请号：US70820

申请日：1998-04-30

申请人： Jonathan Wang ,  Dietrich W. Vook

发明人： Jonathan Wang ,  Dietrich W. Vook

IPC分类号： G11C11/413 ,  G01R31/28 ,  G06F11/25 ,  G11C29/04 ,  G11C29/48 ,  G11C29/50 ,  G11C7/00

CPC分类号： G11C29/50 ,  G11C29/04 ,  G11C29/48 ,  G06F11/2252

摘要： Small feature CMOS defect analysis of SRAM circuits is made less time consuming with the inclusion of an in-circuit test connection which is brought to external contact pads. External measurement and circuit forcing are accomplished via the external contact pads. A fault library for comparison to automated tests results provides faster resolution of process defects.

摘要翻译： 通过将包含在外部接触焊盘中的在线测试连接，SRAM电路的小功能CMOS缺陷分析的耗时较少。 外部测量和电路强制通过外部接触垫完成。 与自动化测试结果进行比较的故障库可以更快地解决过程缺陷。

公开(公告)号：US06759262B2

公开(公告)日：2004-07-06

申请号：US10032023

申请日：2001-12-18

申请人： Jeremy A. Theil ,  Dietrich W. Vook ,  Homayoon Haddad

发明人： Jeremy A. Theil ,  Dietrich W. Vook ,  Homayoon Haddad

IPC分类号： H01L2100

CPC分类号： H01L31/105 ,  H01L27/14609 ,  H01L27/1463

摘要： An image sensor and method of manufacture therefor includes a substrate having pixel control circuitry. Dielectric layers on the substrate include interconnects in contact with the pixel control circuitry and with pixel electrodes. An intrinsic layer is over the pixel electrodes and has a gap provided between the pixel electrodes. An intrinsic-layer covering layer is over the intrinsic layer and a transparent contact layer over the intrinsic-layer covering and the interconnects. The intrinsic, intrinsic-layer covering, and transparent contact layer interact in different combinations to provide a pixel isolation system for the image sensor.

摘要翻译： 图像传感器及其制造方法包括具有像素控制电路的基板。 衬底上的介电层包括与像素控制电路和像素电极接触的互连。 本征层在像素电极之上，并且在像素电极之间具有间隙。 本征层覆盖层在本征层之上，并且在本征层覆盖物和互连之上形成透明接触层。 固有的本征层覆盖层和透明接触层以不同的组合相互作用以提供用于图像传感器的像素隔离系统。

公开(公告)号：US4879259A

公开(公告)日：1989-11-07

申请号：US306268

申请日：1989-02-01

申请人： Scott K. Reynolds ,  Dietrich W. Vook ,  James F. Gibbons

发明人： Scott K. Reynolds ,  Dietrich W. Vook ,  James F. Gibbons

IPC分类号： H01L21/324

CPC分类号： H01L21/3245 ,  Y10S148/004 ,  Y10S148/022 ,  Y10S148/084

摘要： A method of annealing a wafer in a rapid thermal annealer is disclosed. The walls of the chamber are heated more rapidly than is the wafer. In a preferred embodiment, the interior of the graphite walls of the annealer is lined with a molybdenum sheet which is open toward the lamps that heat the chamber. Thus, the walls heat very rapidly to a temperature greater than the condensation point of arsenic, preventing arsenic condensation on the walls. Effective annealing can be achieved at wall temperatures in the range of 500.degree. to 600.degree. C. Prior to the heat ramp up, an arsenic atmosphere, preferably trimethylarsenic (TMAs) at an appropriate overpressure is introduced. This overpressure is maintained both during the heating and cooling cycle. By the use of this method, the exposure time for annealing can be reduced from prior times of as much as 20 minutes to as little as 10 seconds.

摘要翻译： 公开了一种在快速热退火炉中退火晶片的方法。 室的壁比晶片加热得更快。 在优选实施例中，退火炉的石墨壁的内部衬有钼片，该钼片向加热腔室的灯开放。 因此，壁迅速加热到大于砷的凝结点的温度，防止壁上的砷冷凝。 在500〜600℃的壁温下可以实现有效的退火。在加热之前，引入砷气氛，优选在适当的超压下的三甲基砷（TMA）。 在加热和冷却循环期间都保持这种超压。 通过使用该方法，退火的曝光时间可以从先前的20分钟至少至10秒的时间减少。