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    Image sensor with pixel isolation system and manufacturing method therefor
    1.
    发明授权
    Image sensor with pixel isolation system and manufacturing method therefor 有权
    具有像素隔离系统的图像传感器及其制造方法

    公开(公告)号：US06759262B2

    公开(公告)日：2004-07-06

    申请号：US10032023

    申请日：2001-12-18

    申请人： Jeremy A. Theil ,  Dietrich W. Vook ,  Homayoon Haddad

    发明人： Jeremy A. Theil ,  Dietrich W. Vook ,  Homayoon Haddad

    IPC分类号： H01L2100

    CPC分类号： H01L31/105 ,  H01L27/14609 ,  H01L27/1463

    摘要： An image sensor and method of manufacture therefor includes a substrate having pixel control circuitry. Dielectric layers on the substrate include interconnects in contact with the pixel control circuitry and with pixel electrodes. An intrinsic layer is over the pixel electrodes and has a gap provided between the pixel electrodes. An intrinsic-layer covering layer is over the intrinsic layer and a transparent contact layer over the intrinsic-layer covering and the interconnects. The intrinsic, intrinsic-layer covering, and transparent contact layer interact in different combinations to provide a pixel isolation system for the image sensor.

    摘要翻译： 图像传感器及其制造方法包括具有像素控制电路的基板。 衬底上的介电层包括与像素控制电路和像素电极接触的互连。 本征层在像素电极之上，并且在像素电极之间具有间隙。 本征层覆盖层在本征层之上，并且在本征层覆盖物和互连之上形成透明接触层。 固有的本征层覆盖层和透明接触层以不同的组合相互作用以提供用于图像传感器的像素隔离系统。

    Semiconductor-On-Insulator Devices and Associated Methods
    2.
    发明申请
    Semiconductor-On-Insulator Devices and Associated Methods 审中-公开
    半导体绝缘体器件及相关方法

    公开(公告)号：US20130168803A1

    公开(公告)日：2013-07-04

    申请号：US13621737

    申请日：2012-09-17

    申请人： Homayoon Haddad ,  Leonard Forbes

    发明人： Homayoon Haddad ,  Leonard Forbes

    IPC分类号： H01L21/50 ,  H01L29/16

    CPC分类号： H01L21/50 ,  H01L21/6835 ,  H01L21/77 ,  H01L21/7806 ,  H01L29/16 ,  H01L2221/68327 ,  H01L2221/68363

    摘要： Semiconductor-on-insulator (SOI) devices and associated methods are provided. In one aspect, for example, a method for making a SOI device can include forming a device layer on a front side of a semiconductor layer, bonding a first substrate to the front side of the device layer, processing the semiconductor layer on a back side opposite the device layer to form a processed surface, and bonding a second substrate to the processed surface. In some aspects, the method can further include removing the first substrate from the front side to expose the device layer. In one aspect, forming the device layer can include forming optoelectronic circuitry at the front side of the semiconductor layer.

    摘要翻译： 提供绝缘体上半导体（SOI）器件及相关方法。 一方面，例如，制造SOI器件的方法可以包括在半导体层的正面形成器件层，将第一衬底接合到器件层的前侧，在后侧处理半导体层 与所述器件层相对以形成经处理的表面，以及将第二衬底接合到所述经处理的表面。 在一些方面，该方法还可以包括从前侧去除第一衬底以暴露器件层。 一方面，形成器件层可以包括在半导体层的前侧形成光电子电路。

    Isolation trench fabrication process
    4.
    发明授权
    Isolation trench fabrication process 失效
    隔离槽制造工艺

    公开(公告)号：US6033961A

    公开(公告)日：2000-03-07

    申请号：US71051

    申请日：1998-04-30

    申请人： Jim-Jun Xu ,  Homayoon Haddad

    发明人： Jim-Jun Xu ,  Homayoon Haddad

    IPC分类号： H01L21/76 ,  H01L21/3105 ,  H01L21/316 ,  H01L21/762 ,  H01L21/336 ,  H01L21/302 ,  H01L21/461

    CPC分类号： H01L21/76232 ,  H01L21/31053 ,  H01L21/31604 ,  H01L21/76229

    摘要： Two steps of planarizing are performed during isolation trench fabrication resulting in a more uniform planarization of an integrated circuit substrate. A protective layer deposition and a planarizing step are performed prior to a final planarizing step. Applying protective material fills in a portion of recesses in a dielectric layer overlying isolation trench areas. A first global planarization process eliminates narrower recesses and shallows out deeper recesses without causing dishing in the dielectric material. Much of the protective material is removed by the first global planarization process. The remaining protective material is stripped. A final global planarization process then is performed which removes dielectric material outside of the trench areas. A well-defined border of the trenches results.

    摘要翻译： 在隔离沟槽制造期间执行两个平坦化步骤，导致集成电路基板的更均匀的平坦化。 在最终平坦化步骤之前进行保护层沉积和平坦化步骤。 施加保护材料填充在覆盖隔离沟槽区域的电介质层的凹陷部分中。 第一个全局平面化处理消除了较窄的凹陷，并且在较深的凹陷处浅出，而不会导致电介质材料的凹陷。 通过第一个全局平坦化过程去除大部分保护材料。 剩余的保护材料被剥离。 然后执行最后的全局平坦化工艺，其去除沟槽区域外部的电介质材料。 沟渠界定明确。

    THREE DIMENSIONAL SENSORS, SYSTEMS, AND ASSOCIATED METHODS
    5.
    发明申请
    THREE DIMENSIONAL SENSORS, SYSTEMS, AND ASSOCIATED METHODS 有权
    三维传感器，系统和相关方法

    公开(公告)号：US20130062522A1

    公开(公告)日：2013-03-14

    申请号：US13418226

    申请日：2012-03-12

    申请人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

    发明人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

    IPC分类号： G01J5/22 ,  B82Y15/00

    CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

    摘要翻译： 提供3D传感器，系统和相关方法。 在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管 靠近所述至少一个可见光光电二极管。 该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。 在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。

    Process Module for Increasing the Response of Backside Illuminated Photosensitive Imagers and Associated Methods
    6.
    发明申请
    Process Module for Increasing the Response of Backside Illuminated Photosensitive Imagers and Associated Methods 有权
    用于增加背面照射光敏成像器的响应的过程模块和相关方法

    公开(公告)号：US20120313204A1

    公开(公告)日：2012-12-13

    申请号：US13493891

    申请日：2012-06-11

    申请人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

    发明人： Homayoon Haddad ,  Jeffrey McKee ,  Jutao Jiang ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

    IPC分类号： H01L31/0232 ,  H01L31/18

    CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14629 ,  H01L27/1464 ,  H01L27/14689 ,  H01L27/14692 ,  H01L31/0232 ,  H01L31/18

    摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

    摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理区域，其中纹理区域包括表面 特征尺寸和位置便于调谐到预选的波长的光，以及位于纹理化区域和至少一个结之间的电介质区域。 电介质区域被定位成将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

    PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS
    7.
    发明申请
    PHOTOSENSITIVE IMAGING DEVICES AND ASSOCIATED METHODS 有权
    感光成像装置及相关方法

    公开(公告)号：US20110220971A1

    公开(公告)日：2011-09-15

    申请号：US13050557

    申请日：2011-03-17

    申请人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

    发明人： Homayoon Haddad ,  Jutao Jiang ,  Jeffrey McKee ,  Drake Miller ,  Chintamani Palsule ,  Leonard Forbes

    IPC分类号： H01L27/148 ,  H01L31/0236 ,  H01L31/0232 ,  H01L31/18 ,  H01L31/112

    CPC分类号： H01L27/1464 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14645 ,  H01L27/14685

    摘要： Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation, and a passivation region positioned between the textured region and the at least one junction. The passivation region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

    摘要翻译： 提供背面照明感光装置及相关方法。 在一个方面，例如，背面照射的光敏成像器件可以包括具有形成至少一个结的多个掺杂区域的半导体衬底，耦合到半导体衬底并被定位成与电磁辐射相互作用的纹理化区域，以及位于 在纹理化区域和至少一个结点之间。 定位钝化区以将至少一个结与纹理化区域隔离，并且半导体衬底和纹理化区域被定位成使得输入的电磁辐射在接触纹理化区域之前穿过半导体衬底。 另外，该装置包括耦合到半导体衬底以从至少一个结转移电信号的电转移元件。

    Pixel with asymmetric transfer gate channel doping
    9.
    发明授权
    Pixel with asymmetric transfer gate channel doping 有权
    具有不对称传输栅极通道掺杂的像素

    公开(公告)号：US07834383B2

    公开(公告)日：2010-11-16

    申请号：US12481056

    申请日：2009-06-09

    申请人： Chintamani P. Palsule ,  Changhoon Choi ,  Fredrick P. LaMaster ,  John H. Stanback ,  Thomas E. Dungan ,  Thomas Joy ,  Homayoon Haddad

    发明人： Chintamani P. Palsule ,  Changhoon Choi ,  Fredrick P. LaMaster ,  John H. Stanback ,  Thomas E. Dungan ,  Thomas Joy ,  Homayoon Haddad

    IPC分类号： H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/14643 ,  H01L27/14601 ,  H01L29/66659 ,  H01L31/035281

    摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.

    摘要翻译： 包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域 位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。 第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置 扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。

    Three dimensional sensors, systems, and associated methods
    10.
    发明授权
    Three dimensional sensors, systems, and associated methods 有权
    三维传感器，系统和相关方法

    公开(公告)号：US08698084B2

    公开(公告)日：2014-04-15

    申请号：US13418226

    申请日：2012-03-12

    申请人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

    发明人： Jutao Jiang ,  Jeffrey McKee ,  Homayoon Haddad ,  Chris Sungkwon Hong

    IPC分类号： G01J5/02 ,  H01L27/14

    CPC分类号： H01L27/14647 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    摘要： 3D sensors, systems, and associated methods are provided. In one aspect, for example, a monolithic 3D sensor for detecting infrared and visible light can include a semiconductor substrate having a device surface, at least one visible light photodiode formed at the device surface and at least one 3D photodiode formed at the device surface in proximity to the at least one visible light photodiode. The device can further include a quantum efficiency enhanced infrared light region functionally coupled to the at least one 3D photodiode and positioned to interact with electromagnetic radiation. In one aspect, the quantum efficiency enhanced infrared light region is a textured region located at the device surface.

    摘要翻译： 提供3D传感器，系统和相关方法。 在一个方面，例如，用于检测红外和可见光的单片3D传感器可以包括具有器件表面的半导体衬底，在器件表面处形成的至少一个可见光光电二极管和在器件表面处形成的至少一个3D光电二极管 靠近所述至少一个可见光光电二极管。 该装置还可以包括功能上耦合到至少一个3D光电二极管并定位成与电磁辐射相互作用的量子效率增强的红外光区域。 在一个方面，量子效率增强红外光区域是位于器件表面处的纹理区域。