公开(公告)号：US06759262B2

公开(公告)日：2004-07-06

申请号：US10032023

申请日：2001-12-18

申请人： Jeremy A. Theil ,  Dietrich W. Vook ,  Homayoon Haddad

发明人： Jeremy A. Theil ,  Dietrich W. Vook ,  Homayoon Haddad

IPC分类号： H01L2100

CPC分类号： H01L31/105 ,  H01L27/14609 ,  H01L27/1463

摘要： An image sensor and method of manufacture therefor includes a substrate having pixel control circuitry. Dielectric layers on the substrate include interconnects in contact with the pixel control circuitry and with pixel electrodes. An intrinsic layer is over the pixel electrodes and has a gap provided between the pixel electrodes. An intrinsic-layer covering layer is over the intrinsic layer and a transparent contact layer over the intrinsic-layer covering and the interconnects. The intrinsic, intrinsic-layer covering, and transparent contact layer interact in different combinations to provide a pixel isolation system for the image sensor.

摘要翻译： 图像传感器及其制造方法包括具有像素控制电路的基板。 衬底上的介电层包括与像素控制电路和像素电极接触的互连。 本征层在像素电极之上，并且在像素电极之间具有间隙。 本征层覆盖层在本征层之上，并且在本征层覆盖物和互连之上形成透明接触层。 固有的本征层覆盖层和透明接触层以不同的组合相互作用以提供用于图像传感器的像素隔离系统。

公开(公告)号：US6018187A

公开(公告)日：2000-01-25

申请号：US174718

申请日：1998-10-19

申请人： Jeremy A. Theil ,  Min Cao ,  Dietrich W. Vook ,  Frederick A. Perner ,  Xin Sun ,  Shawming Ma ,  Gary W. Ray

发明人： Jeremy A. Theil ,  Min Cao ,  Dietrich W. Vook ,  Frederick A. Perner ,  Xin Sun ,  Shawming Ma ,  Gary W. Ray

IPC分类号： H04N5/335 ,  H01L27/146 ,  H01L31/02 ,  H01L31/00 ,  H01L31/075 ,  H01L31/105 ,  H01L31/117

CPC分类号： H01L27/14632 ,  H01L27/14643 ,  H01L31/02002

摘要： An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. Each photo sensor includes an individual pixel electrode. An I-layer is formed over all of the pixel electrodes. A transparent electrode is formed over the I-layer. An inner surface of the transparent electrode is electrically connected to the I-layer and the interconnect structure.

摘要翻译： 有源像素传感器。 有源像素传感器包括衬底，与衬底相邻的互连结构以及与互连结构相邻的至少一个光电传感器。 每个光传感器包括单独的像素电极。 在所有像素电极上形成I层。 在I层上形成透明电极。 透明电极的内表面与I层和互连结构电连接。

公开(公告)号：US06759724B2

公开(公告)日：2004-07-06

申请号：US10349447

申请日：2003-01-22

申请人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

发明人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

IPC分类号： H01L3120

CPC分类号： H01L27/14601 ,  H01L27/14665

摘要： An image sensor. The image sensor array includes a substrate. An interconnect structure is formed adjacent to the substrate. An amorphous silicon electrode layer is adjacent to the interconnect structure. The amorphous silicon electrode layer includes electrode ion implantation regions between pixel electrode regions. The pixel electrode regions define cathodes of an array of image sensors. The electrode ion implantation regions provide physical isolation between the pixel electrode regions. The cathodes are electrically connected to the interconnect structure. An amorphous silicon I-layer is adjacent to the amorphous silicon electrode layer. The amorphous silicon I-layer forms an inner layer of each of the image sensors. A transparent electrode layer is formed adjacent to the image sensors. An inner surface of the transparent electrode is electrically connected to anodes of the image sensors and the interconnect structure. The amorphous silicon I-layer region can further include I-layer ion implantation regions that provide physical isolation between the inner layers of the image sensors. The I-layer ion implantation regions align with the electrode ion implantation regions. An amorphous silicon P-layer can be formed adjacent to the amorphous silicon I-layer. The amorphous silicon P-layer forms an outer layer of each of the image sensors. The amorphous silicon P-layer region can include P-layer ion implantation regions that provide physical isolation between the outer layers of the image sensors.

摘要翻译： 图像传感器。 图像传感器阵列包括基板。 在衬底附近形成互连结构。 非晶硅电极层与互连结构相邻。 非晶硅电极层包括像素电极区域之间的电极离子注入区域。 像素电极区域限定图像传感器阵列的阴极。 电极离子注入区域提供像素电极区域之间的物理隔离。 阴极电连接到互连结构。 非晶硅I层与非晶硅电极层相邻。 非晶硅I层形成每个图像传感器的内层。 形成与图像传感器相邻的透明电极层。 透明电极的内表面电连接到图像传感器和互连结构的阳极。 非晶硅I层区域还可以包括在图像传感器的内层之间提供物理隔离的I层离子注入区域。 I层离子注入区域与电极离子注入区域对准。 非晶硅P层可以与非晶硅I层相邻地形成。 非晶硅P层形成每个图像传感器的外层。 非晶硅P层区域可以包括在图像传感器的外层之间提供物理隔离的P层离子注入区域。

公开(公告)号：US06586812B1

公开(公告)日：2003-07-01

申请号：US09290443

申请日：1999-04-13

申请人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

发明人： Min Cao ,  Jeremy A. Theil ,  Gary W. Ray ,  Dietrich W. Vook

IPC分类号： H01L3120

CPC分类号： H01L27/14601 ,  H01L27/14665

摘要： An array of image sensors that includes ion implantation regions that provide physical isolation between the pixel electrode regions. The physical isolation reduces coupling and cross-talk between the image sensors. The array of isolated image sensors can be formed by a simple fabrication process.

摘要翻译： 包括在像素电极区域之间提供物理隔离的离子注入区域的图像传感器阵列。 物理隔离减少了图像传感器之间的耦合和串扰。 隔离图像传感器的阵列可以通过简单的制造工艺形成。

公开(公告)号：US6114739A

公开(公告)日：2000-09-05

申请号：US174717

申请日：1998-10-19

申请人： Jeremy A. Theil ,  Min Cao ,  Dietrich W. Vook ,  Frederick A. Perner ,  Xin Sun ,  Shawming Ma ,  Gary W. Ray ,  Wayne M. Greene ,  Kit M. Cham ,  Steven A. Lupi

发明人： Jeremy A. Theil ,  Min Cao ,  Dietrich W. Vook ,  Frederick A. Perner ,  Xin Sun ,  Shawming Ma ,  Gary W. Ray ,  Wayne M. Greene ,  Kit M. Cham ,  Steven A. Lupi

IPC分类号： H01L27/146 ,  H01L31/02 ,  H01L27/14 ,  H01L31/00

CPC分类号： H01L27/14643 ,  H01L27/14632 ,  H01L31/02005

摘要： An active pixel sensor. The active pixel sensor includes a substrate, an interconnect structure adjacent to the substrate, and at least one photo sensor adjacent to the interconnect structure. At least one photo sensor is formed adjacent to the interconnect structure. Each photo sensor includes a pixel electrode which includes a patterned doped semiconductor layer. An I-layer is formed adjacent to the patterned doped semiconductor layer. A transparent electrode is formed adjacent to the I-layer. A method of forming the active pixel sensor includes forming an interconnect structure over a substrate. Next, a doped semiconductor layer is deposited over the interconnect structure. The doped semiconductor layer is etched forming pixel electrode. An I-layer is deposited over the pixel electrodes. Finally, a transparent conductive layer is deposited over the I-layer.

摘要翻译： 有源像素传感器。 有源像素传感器包括衬底，与衬底相邻的互连结构以及与互连结构相邻的至少一个光电传感器。 在互连结构附近形成至少一个光电传感器。 每个光传感器包括包括图案化掺杂半导体层的像素电极。 在图案化掺杂半导体层附近形成I层。 形成与I层相邻的透明电极。 形成有源像素传感器的方法包括在衬底上形成互连结构。 接下来，在互连结构上沉积掺杂半导体层。 蚀刻形成像素电极的掺杂半导体层。 I层沉积在像素电极上。 最后，透明导电层沉积在I层上。

公开(公告)号：US6083572A

公开(公告)日：2000-07-04

申请号：US31865

申请日：1998-02-27

申请人： Jeremy A. Theil ,  Gary W. Ray ,  Karen L. Seaward ,  Francoise F. Mertz

发明人： Jeremy A. Theil ,  Gary W. Ray ,  Karen L. Seaward ,  Francoise F. Mertz

IPC分类号： C23C16/26 ,  H01L21/312 ,  H01L21/768 ,  H05H1/20

CPC分类号： H01L21/3127 ,  C23C16/26 ,  H01L21/76801

摘要： A method of forming a low-dielectric constant film on a substrate. The method includes placing the substrate within a plasma processing chamber. Gas within the chamber is removed. A combination of hydrocarbon and hydrofluorocarbon gasses are flowed into the chamber. A high density plasma is created in the chamber. The high density plasma is extinguished. Finally, all gas is removed from the chamber. The method can additionally include a heating step after the film has been formed.

摘要翻译： 在基板上形成低介电常数膜的方法。 该方法包括将衬底放置在等离子体处理室内。 室内的气体被去除。 烃和氢氟烃气体的组合流入室中。 在室内产生高密度等离子体。 高密度等离子体熄灭。 最后，将所有气体从腔室中取出。 该方法还可以包括在膜已经形成之后的加热步骤。

公开(公告)号：US06747773B2

公开(公告)日：2004-06-08

申请号：US10284857

申请日：2002-10-31

申请人： Jeremy A. Theil ,  Mihail M. Sigalas ,  Storrs T. Hoen

发明人： Jeremy A. Theil ,  Mihail M. Sigalas ,  Storrs T. Hoen

IPC分类号： G02F100

CPC分类号： G02F1/0128 ,  B82Y20/00 ,  G02B6/1225 ,  G02F2202/32

摘要： Using a micro-electromechanical actuator, tuning stubs may be actuated for tuning cavities in photonic crystal lattice structures. An actuated tuning stub can be used to tune cavities in both two and three dimensional photonic crystal lattice structures.

摘要翻译： 使用微机电致动器，可以致动调谐短截线以调整光子晶格结构中的空腔。 可以使用致动的调谐短截线来调节二维和三维光子晶格结构中的腔。

公开(公告)号：US06902946B2

公开(公告)日：2005-06-07

申请号：US10306050

申请日：2002-11-26

申请人： Jeremy A. Theil

发明人： Jeremy A. Theil

IPC分类号： H01L21/00 ,  H01L27/146 ,  H01L31/00 ,  H01L31/0224 ,  H01L31/105 ,  H01L31/117 ,  H01L33/00

CPC分类号： H01L31/022466 ,  H01L27/14632 ,  H01L27/14643

摘要： An active pixel sensor having a transparent conductor that directly contacts a conductive element in an interconnection structure to electrically connect the transparent conductor to a pixel sensor bias voltage is provided. The active pixel sensor includes a semiconductor substrate, the interconnection layer, which is formed over the substrate, and a pixel interconnection layer formed over the interconnection layer. Photo sensors that include a pixel electrode, an I-layer, and may include a P-layer are formed over the pixel interconnection layer. The transparent conductor is formed over the photo sensors and the conductive element exposed on the surface of the interconnection layer.

摘要翻译： 提供一种有源像素传感器，其具有直接接触互连结构中的导电元件以将透明导体电连接到像素传感器偏置电压的透明导体。 有源像素传感器包括半导体衬底，形成在衬底上的互连层和形成在互连层上的像素互连层。 包括像素电极，I层并且可以包括P层的光传感器形成在像素互连层上。 透明导体形成在光传感器和暴露在互连层表面上的导电元件之上。

公开(公告)号：US06384460B1

公开(公告)日：2002-05-07

申请号：US09326340

申请日：1999-06-07

申请人： Jeremy A. Theil ,  Min Cao

发明人： Jeremy A. Theil ,  Min Cao

IPC分类号： H01L310376

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/14665

摘要： A self-aligned metal electrode sensor structure. The self-aligned metal electrode sensor structure includes a substrate which includes electronic circuitry. An interconnect structure is formed adjacent to the substrate. The interconnect structure includes conductive interconnect vias which pass through the interconnect structure. A sensor is formed adjacent to the interconnect structure. The sensor includes a pixel metallization section and a doped layer electrode. The pixel metallization section is electrically connected to the interconnect via. The pixel metallization section includes an outer surface which is substantially planar. The doped layer electrode includes an inner surface adjacent to the outer surface of the pixel metallization section. The entire inner surface of the doped layer electrode is substantially planar. A transparent conductive layer is formed adjacent to the sensor. The interconnect via and the transparent conductive layer electrically connect the electronic circuitry to the sensor. An embodiment includes the outer surface of the pixel metallization section having an outer surface area which is substantially equal to an inner surface area of the inner surface of the doped layer electrode. Another embodiment includes the outer surface of the pixel metallization section having an outer surface area which is less than an inner surface area of the inner surface of the doped layer electrode.

摘要翻译： 自对准金属电极传感器结构。 自对准金属电极传感器结构包括包括电子电路的基板。 在衬底附近形成互连结构。 互连结构包括通过互连结构的导电互连通孔。 邻近互连结构形成传感器。 传感器包括像素金属化部分和掺杂层电极。 像素金属化部分电连接到互连通孔。 像素金属化部分包括基本上平面的外表面。 掺杂层电极包括与像素金属化部分的外表面相邻的内表面。 掺杂层电极的整个内表面基本上是平面的。 在传感器附近形成透明导电层。 互连通孔和透明导电层将电子电路电连接到传感器。 一个实施例包括像素金属化部分的外表面，其外表面积基本上等于掺杂层电极的内表面的内表面积。 另一个实施例包括像素金属化部分的外表面具有小于掺杂层电极的内表面的内表面积的外表面积。

公开(公告)号：US6027995A

公开(公告)日：2000-02-22

申请号：US135618

申请日：1998-08-18

申请人： Chien Chiang ,  Chuanbin Pan ,  Vicky M. Ochoa ,  Sychyi Fang ,  David B. Fraser ,  Joyce C. Sum ,  Gary William Ray ,  Jeremy A. Theil

发明人： Chien Chiang ,  Chuanbin Pan ,  Vicky M. Ochoa ,  Sychyi Fang ,  David B. Fraser ,  Joyce C. Sum ,  Gary William Ray ,  Jeremy A. Theil

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/28

CPC分类号： H01L23/5329 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76877 ,  H01L23/5222 ,  H01L2924/0002

摘要： An interconnect system is provided. The interconnect system includes a silicon substrate and a first dielectric layer formed upon the silicon substrate. The interconnect system also includes a first level of at least two electrically conductive lines formed upon the first dielectric layer. The interconnect system further includes a region of low dielectric constant material formed between the at least two electrically conductive lines. The interconnect system also includes a first hard mask formed upon the polymer region.

摘要翻译： 提供互连系统。 互连系统包括硅衬底和形成在硅衬底上的第一介电层。 互连系统还包括形成在第一介电层上的至少两个导电线的第一级。 所述互连系统还包括形成在所述至少两个导电线之间的低介电常数材料区域。 互连系统还包括形成在聚合物区域上的第一硬掩模。