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    Method of forming buried gate electrode utilizing formation of conformal gate oxide and gate electrode layers
    26.
    发明授权
    Method of forming buried gate electrode utilizing formation of conformal gate oxide and gate electrode layers 失效
    通过形成保形栅极氧化物和栅极电极层形成掩埋栅电极的方法

    公开(公告)号：US08173506B2

    公开(公告)日：2012-05-08

    申请号：US12626959

    申请日：2009-11-30

    申请人： Eun-ji Jung ,  Hyun-soo Kim ,  Byung-hee Kim ,  Dae-yong Kim ,  Woong-hee Sohn ,  Kwang-jin Moon ,  Jang-hee Lee ,  Min-sang Song ,  Eun-ok Lee

    发明人： Eun-ji Jung ,  Hyun-soo Kim ,  Byung-hee Kim ,  Dae-yong Kim ,  Woong-hee Sohn ,  Kwang-jin Moon ,  Jang-hee Lee ,  Min-sang Song ,  Eun-ok Lee

    IPC分类号： H01L21/336

    CPC分类号： H01L21/28052 ,  H01L29/4236

    摘要： A method of forming a buried gate electrode prevents voids from being formed in a silicide layer of the gate electrode. The method begins by forming a trench in a semiconductor substrate, forming a conformal gate oxide layer on the semiconductor in which the trench has been formed, forming a first gate electrode layer on the gate oxide layer, forming a silicon layer on the first gate electrode layer to fill the trench. Then, a portion of the first gate electrode layer is removed to form a recess which exposed a portion of a lateral surface of the silicon layer. A metal layer is then formed on the semiconductor substrate including on the silicon layer. Next, the semiconductor substrate is annealed while the lateral surface of the silicon layer is exposed to form a metal silicide layer on the silicon layer.

    摘要翻译： 形成掩埋栅电极的方法防止在栅电极的硅化物层中形成空隙。 该方法开始于在半导体衬底中形成沟槽，在已经形成沟槽的半导体上形成共形栅极氧化层，在栅极氧化层上形成第一栅电极层，在第一栅电极上形成硅层 层填补沟槽。 然后，去除第一栅极电极层的一部分以形成暴露硅层的侧表面的一部分的凹部。 然后在包括硅层的半导体衬底上形成金属层。 接下来，半导体衬底退火，同时暴露硅层的侧表面以在硅层上形成金属硅化物层。