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32 条记录 (耗时 0.05 秒)

    Method of selective coverage of high aspect ratio structures with a conformal film
    22.
    发明授权
    Method of selective coverage of high aspect ratio structures with a conformal film 有权
    用保形膜选择性地覆盖高纵横比结构的方法

    公开(公告)号：US07863190B1

    公开(公告)日：2011-01-04

    申请号：US12623333

    申请日：2009-11-20

    申请人： George D. Papasouliotis ,  Mihai Buretea ,  Collin Mui

    发明人： George D. Papasouliotis ,  Mihai Buretea ,  Collin Mui

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76224 ,  C23C14/046 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/31604 ,  H01L21/76837

    摘要： Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area. The preferential application of the catalyst or catalyst precursor may occur either at the top of the gap, for example to form a sacrificial mask, or at the bottom of the gap to create a seamless and void-free gap fill.

    摘要翻译： 通过在高纵横比结构上选择性地沉积介电材料的保形膜来形成薄介电膜的方法具有半导体处理和其它应用中的用途。 形成电介质膜的方法包括在沉积反应室中提供在表面上具有间隙的衬底。 间隙具有顶部开口和包括从顶部到底部延伸的底部和侧壁的表面区域。 通过首先在表示小于全部间隙表面积的部分上优先施加成膜催化剂或催化剂前体，在间隙中选择性地沉积共形氧化硅基电介质膜。 然后将衬底表面暴露于含硅前体气体，使得在间隙表面积的部分上优先形成氧化硅基电介质膜层。 催化剂或催化剂前体的优先应用可以在间隙的顶部进行，例如以形成牺牲掩模，或者在间隙的底部产生无缝隙和无空隙的间隙填充。

    Method of selective coverage of high aspect ratio structures with a conformal film
    23.
    发明授权
    Method of selective coverage of high aspect ratio structures with a conformal film 有权
    用保形膜选择性地覆盖高纵横比结构的方法

    公开(公告)号：US07625820B1

    公开(公告)日：2009-12-01

    申请号：US11473372

    申请日：2006-06-21

    申请人： George D. Papasouliotis ,  Mihai Buretea ,  Collin Mui

    发明人： George D. Papasouliotis ,  Mihai Buretea ,  Collin Mui

    IPC分类号： H01L21/44

    CPC分类号： H01L21/76224 ,  C23C14/046 ,  H01L21/02123 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/31604 ,  H01L21/76837

    摘要： Methods for forming thin dielectric films by selectively depositing a conformal film of dielectric material on a high aspect ratio structure have uses in semiconductor processing and other applications. A method for forming a dielectric film involves providing in a deposition reaction chamber a substrate having a gap on the surface. The gap has a top opening and a surface area comprising a bottom and sidewalls running from the top to the bottom. A conformal silicon oxide-based dielectric film is selectively deposited in the gap by first preferentially applying a film formation catalyst or a catalyst precursor on a portion representing less than all of the gap surface area. The substrate surface is then exposed to a silicon-containing precursor gas such that a silicon oxide-based dielectric film layer is preferentially formed on the portion of the gap surface area. The preferential application of the catalyst or catalyst precursor may occur either at the top of the gap, for example to form a sacrificial mask, or at the bottom of the gap to create a seamless and void-free gap fill.

    摘要翻译： 通过在高纵横比结构上选择性地沉积介电材料的保形膜来形成薄介电膜的方法具有半导体处理和其它应用中的用途。 形成电介质膜的方法包括在沉积反应室中提供在表面上具有间隙的衬底。 间隙具有顶部开口和包括从顶部到底部延伸的底部和侧壁的表面区域。 通过首先在表示小于全部间隙表面积的部分上优先施加成膜催化剂或催化剂前体，在间隙中选择性地沉积共形氧化硅基电介质膜。 然后将衬底表面暴露于含硅前体气体，使得在间隙表面积的部分上优先形成氧化硅基电介质膜层。 催化剂或催化剂前体的优先应用可以在间隙的顶部进行，例如以形成牺牲掩模，或者在间隙的底部产生无缝隙和无空隙的间隙填充。

    RADIOLOGICAL IMAGE ENHANCEMENT WITH TANTALUM CLUSTERS
    24.
    发明申请
    RADIOLOGICAL IMAGE ENHANCEMENT WITH TANTALUM CLUSTERS 审中-公开
    放射图像增强与TANTALUM CLUSTERS

    公开(公告)号：US20120148501A1

    公开(公告)日：2012-06-14

    申请号：US12962965

    申请日：2010-12-08

    申请人： Fred Geisler ,  Marc Schrier ,  Mihai Buretea

    发明人： Fred Geisler ,  Marc Schrier ,  Mihai Buretea

    IPC分类号： A61K49/04

    CPC分类号： A61K49/04

    摘要： A solution comprising a defined concentration of purified tantalum clusters in a solvent selected from the group consisting of water, ethanol, ethylene glycol and propylene glycol; wherein said defined concentration is greater than 100 mM, preferably greater than 150 mM; most preferably greater than 300 mM. The purified tantalum clusters are obtained by sequentially washing crude tantalum clusters containing residual chloride ions with aqueous hydrochloric acid to remove residual sodium chloride; and washing the hydrochloric acid-washed tantalum clusters with diethyl ether to remove residual hydrochloric acid and water.

    摘要翻译： 一种溶液，其包含在选自水，乙醇，乙二醇和丙二醇的溶剂中的确定浓度的纯化的钽簇; 其中所述限定的浓度大于100mM，优选大于150mM; 最优选大于300mM。 通过用盐酸水溶液依次洗涤含有残留氯离子的粗钽簇以除去残留的氯化钠，得到纯化的钽簇; 并用乙醚洗涤盐酸洗涤的钽簇以除去残留的盐酸和水。