公开(公告)号：US08859319B2

公开(公告)日：2014-10-14

申请号：US13612736

申请日：2012-09-12

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  G02B6/12004 ,  G02B6/131 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/109 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

公开(公告)号：US08615149B2

公开(公告)日：2013-12-24

申请号：US13190403

申请日：2011-07-25

Applicant: Do Won Kim ,  Gyungock Kim ,  JunYeong Lee

Inventor： Do Won Kim ,  Gyungock Kim ,  JunYeong Lee

IPC: G02B6/00 ,  G02B6/12 ,  G02B6/36 ,  H01R43/16

CPC classification number: G02B6/4292 ,  G02B6/3644 ,  G02B6/3652 ,  G02B6/3885

Abstract: Provided are a photonics chip and an optical apparatus including the same. The chip may include a substrate, an optical waveguide, an optical coupler, and a plurality of alignment units. The optical waveguide is formed on the substrate. The optical coupler is formed at the optical waveguide. The alignment units align an optical connector which fixes at least one optical fiber coupled to the optical coupler, on the substrate.

Abstract translation: 提供了一种光子学芯片和包括其的光学装置。 芯片可以包括基板，光波导，光耦合器和多个对准单元。 光波导形成在基板上。 光耦合器形成在光波导处。 对准单元对准在衬底上固定耦合到光耦合器的至少一个光纤的光连接器。

公开(公告)号：US20130156370A1

公开(公告)日：2013-06-20

申请号：US13620560

申请日：2012-09-14

Applicant: Do Won Kim ,  Gyungock Kim

Inventor： Do Won Kim ,  Gyungock Kim

IPC: G02B6/12 ,  G02B6/26

CPC classification number: G02B6/305 ,  G02B6/1228 ,  G02B2006/12061

Abstract: Provided are optical coupling devices and silicon photonics chips having the same. the optical coupling device may include a lower layer having a first region and a second region, a first core layer disposed on the lower layer, the first core layer including first and second waveguides disposed on the first and second regions, respectively, a clad layer covering the first waveguide, and a second core layer interposed between the clad layer and the lower layer to cover the second waveguide. The second waveguide has a width decreasing with increasing distance from the first region and a vertical thickness greater than that of the first waveguide.

Abstract translation: 提供了具有其的光耦合器件和硅光子芯片。 光耦合装置可以包括具有第一区域和第二区域的下层，设置在下层上的第一芯层，第一芯层分别包括设置在第一和第二区域上的第一和第二波导，包层 覆盖第一波导，以及插入在包层和下层之间以覆盖第二波导的第二芯层。 第二波导的宽度随着距离第一区域的距离增加而减小，并且垂直厚度大于第一波导的垂直厚度。

公开(公告)号：US20120126357A1

公开(公告)日：2012-05-24

申请号：US13284818

申请日：2011-10-28

Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/102 ,  H01L31/18

CPC classification number: H01L31/102 ,  H01L31/18

Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

公开(公告)号：US20110135265A1

公开(公告)日：2011-06-09

申请号：US12842287

申请日：2010-07-23

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

IPC: G02B6/10 ,  C23F1/00

CPC classification number: G02B6/13

Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.

Abstract translation: 提供了使用该方法形成波导面和光子器件的方法。 所述方法包括在衬底上形成至少一个包括波导的光学器件裸片，在衬底的下表面中形成至少一个沟槽，并且切割衬底以在沟槽上形成波导的刻面。 沿着与波导下方的波导交叉的方向形成沟槽。

公开(公告)号：US20100193824A1

公开(公告)日：2010-08-05

申请号：US12760366

申请日：2010-04-14

Applicant: Hyun Tak KIM ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

Inventor： Hyun Tak KIM ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

IPC: H01L33/00 ,  H01L33/40

CPC classification number: H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

Abstract translation: 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的孔级中的孔，以及设置在第二电极层上的第二电极层 突变MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

公开(公告)号：US07760974B2

公开(公告)日：2010-07-20

申请号：US11828418

申请日：2007-07-26

Applicant: Jong Moo Lee ,  Duk Jun Kim ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Jong Moo Lee ,  Duk Jun Kim ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/34

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: Provided is a silicon array waveguide grating (AWG) device comprising a silicon array waveguide in which a plurality of optical waveguides formed of a lower cladding layer, a silicon core, and an upper cladding layer are arranged, wherein the variation of the refractive index of the silicon core is positive, and the upper cladding layer is formed of polymer, the variation of refractive index of which according to temperature is negative, which is opposite to the silicon core, and the cross-section of the silicon core varies between different areas to adjust the variation of the effective refractive index of the optical waveguide according to temperature.

Abstract translation: 提供了一种硅阵列波导光栅（AWG）器件，其包括硅阵列波导，其中布置由下包层，硅芯和上包层形成的多个光波导，其中折射率的变化 硅芯是正的，并且上包层由聚合物形成，其折射率随着温度的变化是负的，其与硅芯相反，并且硅芯的横截面在不同的区域之间变化 以根据温度调节光波导的有效折射率的变化。

公开(公告)号：US20100110546A1

公开(公告)日：2010-05-06

申请号：US12541710

申请日：2009-08-14

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  In-Gyoo Kim ,  Gyungock Kim

IPC: G02B5/18

CPC classification number: G02B6/305 ,  G02B6/264 ,  G02B6/32

Abstract: Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.

Abstract translation: 提供了一种光子器件。 光子器件包括分布布拉格反射器（DBR），布置在DBR的两侧的第一和第二波导，设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

公开(公告)号：US20100081225A1

公开(公告)日：2010-04-01

申请号：US12517357

申请日：2007-10-16

Applicant: Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

Inventor： Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

IPC: H01L33/30 ,  B05C11/00 ,  H01L21/20

CPC classification number: H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639

Abstract: Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.

Abstract translation: 提供了用于半导体层的选择性区域生长的掩模图案和用于独立地控制半导体层的生长速率和应变的半导体层的选择区域生长方法。 选择区域生长方法包括：形成多对第一掩模图案，每对中的第一掩模图案包括其间的第一开口区域，第一开口区域的宽度比导致半导体层过度生长的距离宽 ，所述第一掩模图案对以其间的周期P重复布置; 其中通过调整周期P来控制形成在第一开放区域上的半导体层的生长速率和应变。

公开(公告)号：US07630602B2

公开(公告)日：2009-12-08

申请号：US11856498

申请日：2007-09-17

Applicant: Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

Inventor： Duk Jun Kim ,  Jong Moo Lee ,  Junghyung Pyo ,  Gyungock Kim

IPC: G02B6/34 ,  G02B6/10

CPC classification number: G02B6/12028 ,  G02B6/12011

Abstract: An optical filter module for wavelength multiplexing and demultiplexing and a method of manufacturing the same are provided. The optical filter module for wavelength multiplexing and demultiplexing includes: at least one or more input waveguides; an input-stage star coupler in the form of a slab waveguide connected to the input waveguides; array waveguide which is connected to the input-stage star coupler and in which a plurality of individual waveguides, each of which has an optical path having a predetermined length different to those of the other waveguides and has a heterogeneous waveguide interval formed of a material having a different refraction index from that of a core of the waveguides, are sequentially arranged; an output-stage star coupler in the form of a slab waveguide connected to the array waveguides; and at least one or more output waveguides connected to the output-stage star coupler. According to the optical filter module and the method of manufacturing the same, heterogeneous waveguide intervals having core materials different from those of conventional waveguides are introduced in predetermined areas of array waveguides, thereby reducing polarized light and temperature dependency and at the same time effectively removing optical coupling loss, which can occur at both ends of a heterogeneous waveguide interval, without an additional process of forming waveguides.

Abstract translation: 提供了一种用于波分复用和解复用的滤光器模块及其制造方法。 用于波长复用和解复用的滤光器模块包括：至少一个或多个输入波导; 输入级星形耦合器，其形式为连接到输入波导的平板波导; 阵列波导，其连接到输入级星形耦合器，并且其中多个单独的波导具有与其它波导的预定长度不同的预定长度的光路，并且具有由具有 依次布置与波导的芯的折射率不同的折射率; 输出级星形耦合器，其形式为连接到阵列波导的平板波导; 以及连接到输出级星形耦合器的至少一个或多个输出波导。 根据光滤波器模块及其制造方法，在阵列波导的预定区域中引入具有与常规波导不同的芯材料的异质波导间隔，从而降低偏振光和温度依赖性，同时有效地去除光 耦合损耗，其可以发生在异质波导间隔的两端，而没有形成波导的附加工艺。