摘要:
A white light semiconductor light emitting device includes a semiconductor LED and first and second phosphors provided on a light emitting region of the LED to emit light within a first wavelength range, which is different from that of light emitted from the LED, by absorbing a portion of the light emitted from the LED. The first and second phosphors are respectively a barium-silicate-base green phosphor and a zinc-selenium-base red phosphor.
摘要:
The present invention relates to a multi-layered, UV-cured polymer electrolyte and lithium secondary battery comprising the same, wherein the polymer electrolyte comprises: A) a separator layer formed of polymer electrolyte, PP, PE, PVdF or non-woven fabric, wherein the separator layer having two surfaces; B) at least one gelled polymer electrolyte layer located on at least one surface of the separator layer comprising: a) polymer obtained by curing ethyleneglycoldi(meth)acrylate oligomer of the formula (I) by UV irradiation: CH2═CR1COO(CH2CH2O)nCOCR2═CH2 wherein, R1 and R2 are independently hydrogen or methyl group, and n is a integer of 3–20; and b) at least one polymer selected from the group consisting of PVdF-based polymer, PAN-based polymer, PMMA-based polymer and PVC-based polymer; and C) organic electrolyte solution in which lithium salt is dissolved in a solvent.
摘要翻译:本发明涉及包含该聚合物电解质的多层紫外线固化的聚合物电解质和锂二次电池,其中所述聚合物电解质包括:A)由聚合物电解质,PP,PE,PVdF或无纺布形成的隔离层, 其中所述隔离层具有两个表面; B)位于分离器层的至少一个表面上的至少一个胶凝聚合物电解质层,包括:a)通过UV照射固化式(I)的乙二醇二(甲基)丙烯酸酯低聚物获得的聚合物:CH 2 CO 2(CH 2 CH 2 CH 2)n CO 2 CH 2 CO 2(CH 2 CH 2 CH 2) 其中,R 1和R 2各自独立地为氢或甲基,n为3-20的整数; 和b)至少一种选自PVdF基聚合物,PAN基聚合物,基于PMMA的聚合物和基于PVC的聚合物的聚合物; 和C)其中锂盐溶解在溶剂中的有机电解质溶液。
摘要:
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.
摘要:
An apparatus includes a storage unit to receive and store an image file, a processor to parse a media data field of the image file including one or more image data samples and to parse a media header field including an image type data field indicating whether each of the one or more image data samples is one of 2 dimensional (2D) image data and 3 dimensional (3D) stereoscopic image data to generate an image corresponding to one of a 2D image and a 3D stereoscopic image based on the image type data field of the image file, and a display unit to display the generated image according to the image type data field of the image file.
摘要:
A non-volatile memory device includes an active region in which a channel of a transistor is formed in a substrate, element isolation films defining the active region and formed on the substrate at both sides of the channel at a height lower than an upper surface of the active region, a first dielectric layer, a second dielectric layer, and a control gate electrode formed on the active region in this order, and a floating gate electrode formed between the first dielectric layer and the second dielectric layer so as to intersect the length direction of the channel and extend to the upper surfaces of the element isolation films at both sides of the channel, thereby surrounding the channel.
摘要:
A method of fabricating a semiconductor device includes providing a substrate having a memory block and a logic block defined therein, forming a dummy gate pattern on the memory block; forming a first region of a first conductivity type at one side of the dummy gate pattern and a second region of a second conductivity type at the other side of the dummy gate pattern, and forming a nonvolatile memory device electrically connected to the first region.
摘要:
The present invention discloses a data processing method for application layer based on a living network control protocol. The data processing method for application layer which is based on a predetermined protocol composed of at least a lower layer and an application layer includes the steps of: receiving a predetermined primitive from an upper application software; generating a communication cycle identifier (CycleID) according to the primitive; generating a service description according to the primitive and the communication cycle identifier (CycleID); composing an application layer protocol data unit (APDU) including the primitive; and transmitting the APDU to the lower layer.
摘要:
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.
摘要:
Provided is a semiconductor device for applying common source lines with individual bias voltages. The device includes a substrate, cell transistors arrayed in a cell matrix shape on the substrate and configured to have gate insulating patterns, gate electrodes, common source regions, drain regions and channel regions. Word lines are configured to electrically interconnect the gate electrodes with each other. Common source lines are shared between only a pair of the neighboring word lines and are configured to electrically interconnect the common source regions with each other. Drain metal contacts and source metal contacts are arranged in a straight line on the drain regions. Bit lines are electrically connected to the drain metal contacts. And impurity regions are configured to control the threshold voltage of the channel regions.
摘要:
The present invention discloses a home network using a living network control protocol. The home network system includes: a network based on a predetermined protocol; at least electric device connected to the network; and a network manager connected to the network, for controlling and/or monitoring the electric device, when the protocol includes an application layer for handling a message for controlling and monitoring the electric device, a network layer for network-connecting the electric device to the network manager, a data link layer for accessing shared transmission medium, and a physical layer for providing a physical interface between the electric device and the network manager, wherein the physical layer further includes a special protocol for providing an interface with a dependent transmission medium, and the network layer further includes a home code control sub-layer for managing a home code for network security when accessing the dependent transmission medium.