Thermal acoustic probe
    21.
    发明授权
    Thermal acoustic probe 失效
    热声探头

    公开(公告)号:US4683750A

    公开(公告)日:1987-08-04

    申请号:US669197

    申请日:1984-11-07

    摘要: A noncontacting method of measuring periodic surface heating is described. The perturbation of an externally generated acoustic wave is measured. The acoustic wave is generated in the air above a sample to be studied. The acoustic wave is directed onto the sample surface, coincident with a modulated light beam. Absorption of the light beam results in the periodic heating of the sample, at and near the sample surface. The air in contact with the sample surface is in turn heated, and produces a periodic phase shift in the reflected acoustic wave. This phase shift is detected and gives a direct measure of the periodic heating of the sample surface. An acoustic microscope may generate the acoustic wave. The sample is placed in water. An acoustic microscope lens produces an acoustic wave in the water, which focuses onto the sample surface, coincident with a modulated laser beam. The light beam is guided onto the sample using an optical fiber. Heating in the water directly above the illuminated sample produces a phase perturbation in the acoustic wave reflecting off the sample surface. This embodiment of the present invention allows surface heating to be measured with very high spatial resolution.

    摘要翻译: 描述了测量周期性表面加热的非接触方法。 测量外部产生的声波的扰动。 在要研究的样品上方的空气中产生声波。 声波被引导到样品表面上,与调制的光束重合。 吸收光束导致样品在样品表面和样品表面附近的周期性加热。 与样品表面接触的空气又被加热,并在反射的声波中产生周期性的相移。 检测该相移,并给出样品表面的周期性加热的直接测量。 声学显微镜可能会产生声波。 将样品置于水中。 声学显微镜透镜在水中产生声波,其聚焦在样品表面上,与调制的激光束重合。 使用光纤将光束引导到样品上。 在照射样品正上方的水中加热在反射离开样品表面的声波中产生相位扰动。 本发明的该实施例允许以非常高的空间分辨率测量表面加热。

    Monolithic integrated CMUTs fabricated by low-temperature wafer bonding
    22.
    发明授权
    Monolithic integrated CMUTs fabricated by low-temperature wafer bonding 有权
    通过低温晶片接合制造的单片集成CMUT

    公开(公告)号:US08402831B2

    公开(公告)日:2013-03-26

    申请号:US12660807

    申请日:2010-03-03

    IPC分类号: G01H11/00 H02N11/00 H04R31/00

    CPC分类号: B06B1/0292 Y10T29/49005

    摘要: Low temperature wafer bonding (temperature of 450° C. or less) is employed to fabricate CMUTs on a wafer that already includes active electrical devices. The resulting structures are CMUT arrays integrated with active electronics by a low-temperature wafer bonding process. The use of a low-temperature process preserves the electronics during CMUT fabrication. With this approach, it is not necessary to make compromises in the CMUT or electronics designs, as is typical of the sacrificial release fabrication approach. Various disadvantages of sacrificial release, such as low process control, poor design flexibility, low reproducibility, and reduced performance are avoided with the present approach. With this approach, a CMUT array can be provided with per-cell electrodes connected to the substrate integrated circuitry. This enables complete flexibility in electronically assigning the CMUT cells to CMUT array elements.

    摘要翻译: 采用低温晶片接合(450℃或更低的温度)在已包括有源电气设备的晶片上制造CMUT。 所得到的结构是通过低温晶片结合工艺与有源电子器件集成的CMUT阵列。 在CMUT制造期间使用低温过程保留电子元件。 采用这种方法,就像在牺牲释放制造方法中一样,不需要在CMUT或电子设计中做出妥协。 本方法避免了牺牲释放的各种缺点,如低过程控制,设计灵活性差,再现性低,性能下降。 利用这种方法,可以提供连接到衬底集成电路的每个单元电极的CMUT阵列。 这使得能够将CMUT单元电子分配给CMUT阵列元件的完全灵活性。

    Fabrication of capacitive micromachined ultrasonic transducers by local oxidation
    23.
    发明申请
    Fabrication of capacitive micromachined ultrasonic transducers by local oxidation 有权
    通过局部氧化制造电容微机械超声换能器

    公开(公告)号:US20090142872A1

    公开(公告)日:2009-06-04

    申请号:US12288009

    申请日:2008-10-14

    IPC分类号: H01L21/30

    CPC分类号: B06B1/0292

    摘要: Fabrication methods for capacitive micromachined ultrasonic transducers (CMUTS) with independent and precise gap and post thickness control are provided. The fabrication methods are based on local oxidation or local oxidation of silicon (LOCOS) to grow oxide posts. The process steps enable low surface roughness to be maintained to allow for direct wafer bonding of the membrane. In addition, methods for fabricating a step in a substrate are provided with reduced or minimal over-etch time by utilizing the nonlinearity of oxide growth. The fabrication methods of the present invention produce CMUTs with unmatched uniformity, low parasitic capacitance, and high breakdown voltage.

    摘要翻译: 提供了具有独立且精确的间隙和后厚度控制的电容微加工超声波换能器(CMUTS)的制造方法。 制造方法基于硅(LOCOS)的局部氧化或局部氧化以生长氧化物柱。 该工艺步骤使得能够保持低表面粗糙度以允许膜的直接晶片结合。 此外,通过利用氧化物生长的非线性,在衬底中制造步骤的方法具有减小的或最小的过蚀刻时间。 本发明的制造方法产生具有无与伦比的均匀性,低寄生电容和高击穿电压的CMUT。

    Direct wafer bonded 2-D CUMT array
    24.
    发明申请
    Direct wafer bonded 2-D CUMT array 有权
    直接晶圆接合2-D CUMT阵列

    公开(公告)号:US20090122651A1

    公开(公告)日:2009-05-14

    申请号:US12288575

    申请日:2008-10-20

    IPC分类号: H04R19/00 H02N11/00 H04R31/00

    摘要: A capacitive micromachined ultrasonic transducer (CMUT) array connected to a separate electronic unit is provided. The CMUT array includes at least two active elements, a ground element at the array end, and a non-active element having isolation trenches disposed between the active and ground elements. The active element includes a doped first silicon layer, a doped second silicon layer, and a first insulating layer disposed there between. A cavity is in the first silicon layer having a cross section that includes vertical portions disposed at each end of a horizontal portion, and the vertical portion spans from the first insulating layer through the first silicon layer such that a portion of the first silicon layer is isolated by the first insulating layer and the cavity. A membrane layer on the first silicon layer spans the cavity. A bottom electrode is disposed on the bottom of the second silicon layer.

    摘要翻译: 提供连接到单独的电子单元的电容微机械超声换能器(CMUT)阵列。 CMUT阵列包括至少两个有源元件,阵列端的接地元件以及设置在有源和接地元件之间的具有隔离沟槽的非有源元件。 有源元件包括掺杂的第一硅层,掺杂的第二硅层和设置在其间的第一绝缘层。 空腔在第一硅层中,其横截面包括设置在水平部分的每一端处的垂直部分,并且垂直部分跨越第一绝缘层穿过第一硅层,使得第一硅层的一部分为 由第一绝缘层和空腔隔离。 第一硅层上的膜层跨越空腔。 底部电极设置在第二硅层的底部。

    Method and system for operating capacitive membrane ultrasonic transducers
    25.
    发明授权
    Method and system for operating capacitive membrane ultrasonic transducers 有权
    用于操作电容式膜超声波换能器的方法和系统

    公开(公告)号:US07274623B2

    公开(公告)日:2007-09-25

    申请号:US11094874

    申请日:2005-03-30

    IPC分类号: B06B1/02 H02K7/00 A61B8/00

    CPC分类号: B06B1/0292 G10K9/12

    摘要: A novel operation regime for capacitive micromachined ultrasonic transducers (cMUTs). The collapse-snapback operation in which the center of the membrane makes intermittent contact with the substrate. This combines two distinct states of the membrane (in-collapse and out-of-collapse) to unleash unprecedented acoustic output pressures into the medium. The collapse-snapback operation utilizes a larger range of membrane defection profiles (both collapsed and released membrane profiles) and generates higher acoustic output pressures than the conventional operation. Collapse-snapback operation meets the extreme acoustic transmit pressure demands of the ultrasonic industry.

    摘要翻译: 电容式微加工超声换能器(cMUT)的新颖操作方案。 折叠回击操作,其中膜的中心与衬底间歇接触。 这结合了膜的两种截然不同的状态(塌陷和失真),以释放出前所未有的声输出压力进入介质。 塌陷 - 回弹操作利用更大范围的膜缺陷曲线(两个折叠和释放的膜轮廓),并产生比常规操作更高的声输出压力。 塌陷 - 回弹操作满足超声波行业的极端声学传输压力要求。

    Apparatus and method for characterizing semiconductor wafers during
processing

    公开(公告)号:US5996415A

    公开(公告)日:1999-12-07

    申请号:US847144

    申请日:1997-04-30

    摘要: An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined. Characterization accuracy is improved by a wafer calibration procedure wherein measurement offsets from known conditions are determined for each wafer being characterized. An apparatus and technique are disclosed for correcting for anisotropy of acoustic wave velocity due to the direction of wave propagation with respect to a preferred crystallographic axis of the wafer. An apparatus and technique are also described for measuring wafer temperature using a single transducer whose temperature is related to the temperature of the wafer and, optionally, resonator structures. For characterization steps that occur when the wafer is chucked, a chuck structure is described that reduces the likelihood of the chuck interfering with the waves in the wafer.

    Capping structures for acoustic printing
    29.
    发明授权
    Capping structures for acoustic printing 失效
    用于声学印刷的封盖结构

    公开(公告)号:US5686945A

    公开(公告)日:1997-11-11

    申请号:US337913

    申请日:1994-11-14

    IPC分类号: B41J2/175 B41J2/14 B41J2/135

    摘要: Acoustically thin capping structures and acoustic droplet ejectors having fluid wells and which use such capping structures to create fluid cells. The inventive capping structures permit the accurate positioning of the free surface of a fluid, permit acoustically induced fluid droplet ejection, and prevent fluid from spilling from the fluid wells. "Acoustically thin" means that the thickness of the capping structure is small enough that the acoustic energy that is lost passing through the capping structure is less than 50% of the incident acoustic energy.

    摘要翻译: 声学薄封盖结构和具有流体孔的声学液滴喷射器,并且使用这种封盖结构来产生流体池。 本发明的封盖结构允许流体的自由表面的精确定位,允许声学诱导的液滴喷射,并且防止流体从流体孔溢出。 “声学上薄”意味着封盖结构的厚度足够小,使得通过封盖结构失去的声能小于入射声能的50%。

    Liquid level control structure
    30.
    发明授权
    Liquid level control structure 失效
    液位控制结构

    公开(公告)号:US5392064A

    公开(公告)日:1995-02-21

    申请号:US810248

    申请日:1991-12-19

    摘要: A liquid level control structure is provided comprising a plate having substantially flat top and bottom surfaces and an hourglass-shaped aperture containing a marking fluid. Protruding a known amount and at a known angle from opposite sides of the aperture waist are knife-edged lips that interact with the fluid's surface tension to control the location of an unbounded surface of the fluid.

    摘要翻译: 提供了液面控制结构,其包括具有基本上平坦的顶部和底部表面的板和包含标记流体的沙漏形孔。 从孔径腰部的相对侧突出已知的量并以已知的角度突出的是刀刃边缘,其与流体的表面张力相互作用以控制流体的无界表面的位置。