Elastic device using carbon nanotube film
    21.
    发明授权
    Elastic device using carbon nanotube film 有权
    使用碳纳米管膜的弹性装置

    公开(公告)号:US08900709B2

    公开(公告)日:2014-12-02

    申请号:US13450740

    申请日:2012-04-19

    摘要: An elastic device includes a first elastic supporter; a second elastic supporter and a carbon nanotube film. The second elastic supporter is spaced from the first elastic supporter. The carbon nanotube film has a first side fixed on the first elastic supporter and a second side opposite to the first side and fixed on the second elastic supporter. The carbon nanotube film includes a plurality of carbon nanotube strings separately arranged, located side by side and extending substantially along a first direction from the first side to the second side and one or more carbon nanotubes located between adjacent carbon nanotube strings. The carbon nanotube film is capable of elastic deformation along a second direction that is substantially perpendicular to the first direction.

    摘要翻译: 弹性装置包括第一弹性支撑件; 第二弹性支撑体和碳纳米管膜。 第二弹性支撑件与第一弹性支撑件间隔开。 碳纳米管膜具有固定在第一弹性支撑体上的第一侧和与第一侧相反的第二侧并且固定在第二弹性支撑体上。 碳纳米管膜包括多个并排布置并且基本上沿着从第一侧到第二侧的第一方向延伸并且位于相邻碳纳米管串之间的一个或多个碳纳米管的碳纳米管柱。 碳纳米管膜能够沿着与第一方向基本垂直的第二方向弹性变形。

    Thermoacoustic device
    24.
    发明授权
    Thermoacoustic device 有权
    热声装置

    公开(公告)号:US08331586B2

    公开(公告)日:2012-12-11

    申请号:US12655375

    申请日:2009-12-30

    IPC分类号: H04R25/00

    CPC分类号: H04R23/002 B82Y30/00

    摘要: A thermoacoustic device includes a substrate, at least one first electrode, at least one second electrode and a sound wave generator. The at least one first electrode and the at least one second electrode are disposed on the substrate. The sound wave generator is contacting with the at least one first electrode and the at least one second electrode. The sound wave generator is suspended on the substrate via the first electrode and the second electrode. The sound wave generator includes a carbon nanotube structure.

    摘要翻译: 热声装置包括衬底,至少一个第一电极,至少一个第二电极和声波发生器。 所述至少一个第一电极和所述至少一个第二电极设置在所述基板上。 声波发生器与至少一个第一电极和至少一个第二电极接触。 声波发生器经由第一电极和第二电极悬挂在基板上。 声波发生器包括碳纳米管结构。

    Method for making carbon nanotube films
    26.
    发明授权
    Method for making carbon nanotube films 有权
    制造碳纳米管薄膜的方法

    公开(公告)号:US08236389B2

    公开(公告)日:2012-08-07

    申请号:US12291305

    申请日:2008-11-06

    IPC分类号: C23C16/56

    摘要: A method for making a carbon nanotube film, the method comprising the following steps of: (a) supplying a substrate; (b) forming at least one strip-shaped catalyst film on the substrate, a width of the strip-shaped catalyst films ranging from approximately 1 micrometer to 20 micrometers; (c) growing at least one strip-shaped carbon nanotube array on the substrate using a chemical vapor deposition method; and (d) causing the at least one strip-shaped carbon nanotube array to fold along a direction parallel to a surface of the substrate, thus forming at least one carbon nanotube film.

    摘要翻译: 一种制造碳纳米管膜的方法,该方法包括以下步骤:(a)供给基材; (b)在基底上形成至少一个条状催化剂膜,条形催化剂膜的宽度为约1微米至20微米; (c)使用化学气相沉积法在衬底上生长至少一个带状碳纳米管阵列; 和(d)使所述至少一个带状碳纳米管阵列沿着与所述基板的表面平行的方向折叠,从而形成至少一个碳纳米管膜。

    Method for manufacturing iron silicide nano-wires
    27.
    发明授权
    Method for manufacturing iron silicide nano-wires 有权
    铁硅化物纳米线的制造方法

    公开(公告)号:US08119089B2

    公开(公告)日:2012-02-21

    申请号:US12291320

    申请日:2008-11-06

    IPC分类号: C01B21/068

    摘要: A method for making iron silicide nano-wires comprises the following steps. Firstly, providing an iron object and a growing device, and the growing device comprising a heating apparatus and a reacting room. Secondly, placing the iron object into the reacting room. Thirdly, introducing a silicon-containing gas into the reacting room. Finally, heating the reacting room to a temperature of 600˜1200° C.

    摘要翻译: 制造铁硅化物纳米线的方法包括以下步骤。 首先,提供铁物体和生长装置,并且生长装置包括加热装置和反应室。 其次,把铁物放入反应室。 第三,将含硅气体引入反应室。 最后,将反应室加热至600〜1200℃

    Method of manufacturing silicon nano-structure
    28.
    发明授权
    Method of manufacturing silicon nano-structure 有权
    硅纳米结构的制造方法

    公开(公告)号:US07888271B2

    公开(公告)日:2011-02-15

    申请号:US12291301

    申请日:2008-11-06

    IPC分类号: H01L21/31

    摘要: A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a quantity of catalyst separately into the reacting room. Thirdly, introducing a silicon-containing gas and hydrogen gas into the reacting room. Lastly, heating the reacting room to a temperature of 500˜1100° C.

    摘要翻译: 一种制造硅纳米结构的方法,该方法包括以下步骤。 首先,提供增长的衬底和生长装置,该生长装置包括加热装置和反应室。 其次,将生长的基材和一定数量的催化剂分别置于反应室中。 第三,将含硅气体和氢气引入反应室。 最后,将反应室加热到500〜1100℃

    Mobile phone
    30.
    发明申请
    Mobile phone 有权
    移动电话

    公开(公告)号:US20100048254A1

    公开(公告)日:2010-02-25

    申请号:US12583158

    申请日:2009-08-13

    IPC分类号: H04M1/00

    CPC分类号: H04M1/0266 H04M2250/22

    摘要: A mobile phone includes a body defining a display panel, and a touch panel. The body further includes a communicating system received therein. The touch panel is disposed on a surface of the display panel. The touch panel includes at least a carbon nanotube layer. The carbon nanotube layer includes a carbon nanotube film.

    摘要翻译: 手机包括限定显示面板的主体和触摸面板。 身体还包括其中接收的通信系统。 触摸面板设置在显示面板的表面上。 触摸面板至少包括碳纳米管层。 碳纳米管层包括碳纳米管膜。