公开(公告)号：US08354288B2

公开(公告)日：2013-01-15

申请号：US13566239

申请日：2012-08-03

申请人： Bong-Kyun Kim ,  Jong-Hyun Choung ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Ki-Beom Lee ,  Sam-Young Cho ,  Sang-Woo Kim ,  Hyun-Cheol Shin ,  Won-Guk Seo

发明人： Bong-Kyun Kim ,  Jong-Hyun Choung ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Ki-Beom Lee ,  Sam-Young Cho ,  Sang-Woo Kim ,  Hyun-Cheol Shin ,  Won-Guk Seo

IPC分类号： H01L21/461

CPC分类号： C23F1/26 ,  C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/458

摘要： An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

摘要翻译： 蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％ 约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％ 的唑类化合物，剩余的水。 因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。

公开(公告)号：US08173494B2

公开(公告)日：2012-05-08

申请号：US12890324

申请日：2010-09-24

申请人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

发明人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

IPC分类号： H01L21/00

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/4908

摘要： A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.

摘要翻译： 薄膜晶体管阵列及其制造方法包括由基板上的透明导电层形成的像素电极，由透明导电层形成的栅极线和基板上的不透明导电层，连接到栅极的栅电极 并且在基板上形成透明导电层和不透明导电层，覆盖栅极线和栅极的栅极绝缘层，形成在栅极绝缘层上以与栅电极重叠的半导体层，数据线， 与栅极线相交，连接到数据线的源电极与半导体层的一部分重叠，以及连接到像素电极以与半导体层的一部分重叠的漏电极。

公开(公告)号：US20080116474A1

公开(公告)日：2008-05-22

申请号：US11986330

申请日：2007-11-20

申请人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

发明人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

IPC分类号： H01L33/00 ,  H01L21/02

CPC分类号： H01L27/124 ,  H01L27/1214 ,  H01L27/1255 ,  H01L27/1288 ,  H01L29/4908

摘要： A thin film transistor array and method of manufacturing the same include a pixel electrode formed of a transparent conductive layer on a substrate, a gate line formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate electrode connected to the gate line and formed of the transparent conductive layer and an opaque conductive layer on the substrate, a gate insulating layer which covers the gate line and the gate electrode, a semiconductor layer formed on the gate insulating layer to overlap the gate electrode, a data line which intersects the gate line, a source electrode connected to the data line to overlap a part of the semiconductor layer, and a drain electrode connected to the pixel electrode to overlap a part of the semiconductor layer.

摘要翻译： 薄膜晶体管阵列及其制造方法包括由基板上的透明导电层形成的像素电极，由透明导电层形成的栅极线和基板上的不透明导电层，连接到栅极的栅电极 并且在基板上形成透明导电层和不透明导电层，覆盖栅极线和栅极的栅极绝缘层，形成在栅极绝缘层上以与栅电极重叠的半导体层，数据线， 与栅极线相交，连接到数据线的源电极与半导体层的一部分重叠，以及连接到像素电极以与半导体层的一部分重叠的漏电极。

公开(公告)号：US08084184B2

公开(公告)日：2011-12-27

申请号：US12323649

申请日：2008-11-26

申请人： Jong-Hyun Choung ,  Hong-Sick Park ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Byeoung-Jin Lee ,  Byung-Uk Kim ,  Jong-Hyun Jeong ,  Suk-Il Yoon ,  Sung-Gun Shin ,  Soon-Beom Huh ,  Se-Hwan Jung ,  Doo-Young Jang

发明人： Jong-Hyun Choung ,  Hong-Sick Park ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Byeoung-Jin Lee ,  Byung-Uk Kim ,  Jong-Hyun Jeong ,  Suk-Il Yoon ,  Sung-Gun Shin ,  Soon-Beom Huh ,  Se-Hwan Jung ,  Doo-Young Jang

IPC分类号： G03F7/00 ,  G03F7/26 ,  G03F7/32 ,  G03F7/40

CPC分类号： G03F7/425

摘要： A composition for removing a photoresist includes a) an amine compound having a cyclic amine and/or a diamine, b) a glycol ether compound, c) a corrosion inhibitor and d) a polar solvent. The composition further includes a stripping promoter. Further disclosed is a method of manufacturing an array substrate using the composition for removing a photoresist.

摘要翻译： 用于除去光致抗蚀剂的组合物包括a）具有环胺和/或二胺的胺化合物，b）二醇醚化合物，c）缓蚀剂和d）极性溶剂。 组合物还包括剥离促进剂。 进一步公开了使用除去光致抗蚀剂的组合物制造阵列基板的方法。

公开(公告)号：US07888148B2

公开(公告)日：2011-02-15

申请号：US11850922

申请日：2007-09-06

申请人： Hong-Sick Park ,  Bong-Kyun Kim ,  Chang-Oh Jeong ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Won-Suk Shin ,  Byeong-Jin Lee

发明人： Hong-Sick Park ,  Bong-Kyun Kim ,  Chang-Oh Jeong ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Won-Suk Shin ,  Byeong-Jin Lee

IPC分类号： H01L21/00

CPC分类号： C09K13/08 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2320/0223 ,  H01L23/53238 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film panel includes a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, a data line, including a source electrode, and a drain electrode formed on the gate insulating layer or the semiconductor layer, and a pixel electrode connected to the drain electrode, wherein at least one of the gate line and the data line and drain electrode includes a first conductive layer made of a molybdenum Mo-niobium Nb alloy and a second conductive layer made of a copper Cu-containing metal.

摘要翻译： 薄膜面板包括基板，形成在基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，包括源电极的数据线和形成的漏电极 在所述栅极绝缘层或所述半导体层上形成的像素电极和与所述漏极连接的像素电极，其中所述栅极线和所述数据线和漏极的至少一个包括由钼Mo-Nb铌合金构成的第一导电层，以及 由含铜铜金属制成的第二导电层。

公开(公告)号：US20100291722A1

公开(公告)日：2010-11-18

申请号：US12777532

申请日：2010-05-11

申请人： Bong-Kyun Kim ,  Jong-Hyun Choung ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Ki-Beom Lee ,  Sam-Young Cho ,  Sang-Woo Kim ,  Hyun-Cheol Shin ,  Won-Guk Seo

发明人： Bong-Kyun Kim ,  Jong-Hyun Choung ,  Byeong-Jin Lee ,  Sun-Young Hong ,  Hong-Sick Park ,  Shi-Yul Kim ,  Ki-Beom Lee ,  Sam-Young Cho ,  Sang-Woo Kim ,  Hyun-Cheol Shin ,  Won-Guk Seo

IPC分类号： H01L33/44 ,  C09K13/08 ,  H01L33/00

CPC分类号： C23F1/26 ,  C23F1/18 ,  H01L21/32134 ,  H01L27/124 ,  H01L29/458

摘要： An etchant includes about 0.1 percent by weight to about 30 percent by weight of ammonium persulfate (NH4)2S2O8, about 0.1 percent by weight to about 10 percent by weight of an inorganic acid, about 0.1 percent by weight to about 10 percent by weight of an acetate salt, about 0.01 percent by weight to about 5 percent by weight of a fluorine-containing compound, about 0.01 percent by weight to about 5 percent by weight of a sulfonic acid compound, about 0.01 percent by weight to about 2 percent by weight of an azole compound, and a remainder of water. Accordingly, the etchant may have high stability to maintain etching ability. Thus, manufacturing margins may be improved so that manufacturing costs may be reduced.

摘要翻译： 蚀刻剂包括约0.1重量％至约30重量％的过硫酸铵（NH 4）2 S 2 O 8，约0.1重量％至约10重量％的无机酸，约0.1重量％至约10重量％的 约0.01重量％至约5重量％的含氟化合物的乙酸盐，约0.01重量％至约5重量％的磺酸化合物，约0.01重量％至约2重量％ 的唑类化合物，剩余的水。 因此，蚀刻剂可能具有高稳定性以保持蚀刻能力。 因此，可以提高制造裕度，从而可以降低制造成本。

公开(公告)号：US20100182525A1

公开(公告)日：2010-07-22

申请号：US12487928

申请日：2009-06-19

申请人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Doo-Hee Jung ,  Byeong-Jin Lee

发明人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Youn ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Doo-Hee Jung ,  Byeong-Jin Lee

IPC分类号： G02F1/136 ,  H01L29/786

CPC分类号： H01L27/124 ,  G02F1/136286 ,  G02F2001/136231 ,  H01L27/1288

摘要： A display substrate includes an insulating substrate, a thin film transistor, a contact electrode, and a pixel electrode. The thin film transistor includes a control electrode, a semiconductor pattern, a first electrode, and a second electrode. The control electrode is on the insulating substrate. The semiconductor pattern is on the control electrode. The first electrode is on the semiconductor pattern. The second electrode is spaced apart from the first electrode on the semiconductor pattern. The contact electrode includes a contact portion and an undercut portion. The contact portion is electrically connected to the second electrode to partially expose the semiconductor pattern. The undercut portion is electrically connected to the contact portion to cover the semiconductor pattern. The pixel electrode is electrically connected to the second electrode through the contact portion of the contact electrode.

摘要翻译： 显示基板包括绝缘基板，薄膜晶体管，接触电极和像素电极。 薄膜晶体管包括控制电极，半导体图案，第一电极和第二电极。 控制电极在绝缘基板上。 半导体图案在控制电极上。 第一电极位于半导体图案上。 第二电极与半导体图案上的第一电极间隔开。 接触电极包括接触部分和底切部分。 接触部分电连接到第二电极以部分地暴露半导体图案。 底切部分电连接到接触部分以覆盖半导体图案。 像素电极通过接触电极的接触部分电连接到第二电极。

公开(公告)号：US20100149481A1

公开(公告)日：2010-06-17

申请号：US12475083

申请日：2009-05-29

申请人： Byeong-Jin Lee ,  Bong-Kyun Kim ,  Hong-Sick Park ,  Gug-Rae Jo ,  Chang-Hoon Kim ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Min-Uk Kim

发明人： Byeong-Jin Lee ,  Bong-Kyun Kim ,  Hong-Sick Park ,  Gug-Rae Jo ,  Chang-Hoon Kim ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Min-Uk Kim

IPC分类号： G03F7/20 ,  C23F1/02 ,  G02F1/13

CPC分类号： G03F7/0017 ,  G02F1/1333

摘要： The present invention relates to a liquid crystal display (LDC) and in particular, a method of manufacturing a mold to be used in LCDs. The method includes the following steps: forming a first photosensitive film on a substrate; etching the substrate by using the first photosensitive film as a mask to form a first groove; removing the first photosensitive film; forming a second photosensitive film covering the first groove on the substrate; and etching the substrate by using the second photosensitive film as a mask to form a second groove. The method, according to embodiments of the invention, helps reduce the time and/or cost of manufacturing a liquid crystal display.

摘要翻译： 液晶显示器（LDC）技术领域本发明涉及一种液晶显示器（LDC），特别涉及制造用于LCD的模具的方法。 该方法包括以下步骤：在基板上形成第一感光膜; 通过使用第一感光膜作为掩模来蚀刻基板以形成第一凹槽; 去除第一感光膜; 形成覆盖所述基板上的所述第一槽的第二感光膜; 并且通过使用第二感光膜作为掩模来蚀刻基板以形成第二凹槽。 根据本发明的实施例的该方法有助于减少制造液晶显示器的时间和/或成本。

公开(公告)号：US20080169471A1

公开(公告)日：2008-07-17

申请号：US12008156

申请日：2008-01-08

申请人： Won-Suk Shin ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Byeong-Jin Lee

发明人： Won-Suk Shin ,  Hong-Sick Park ,  Jong-Hyun Choung ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Byeong-Jin Lee

IPC分类号： H01L29/04 ,  H01L21/84

CPC分类号： G02F1/13458 ,  G02F2001/136236 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1288

摘要： A display substrate includes a gate line, a data line, a pixel electrode and a source pad part. The gate line is formed on a base substrate. The data line crosses the gate line to define a pixel area. The pixel electrode makes contact with the base substrate. The source pad part is formed on an end portion of the data line, the source pad part including a source metal layer, a conductive etch stop layer formed on the source metal layer and a source pad electrode formed on the conductive etch stop layer. Thus, the conductive etch stop layer of the source pad part prevents the source metal layer of the source pad part from being damaged and the conductive etch stop layer of the source pad part may fully make contact with the source pad electrode.

摘要翻译： 显示基板包括栅极线，数据线，像素电极和源极焊盘部分。 栅极线形成在基底基板上。 数据线与栅极线交叉以定义像素区域。 像素电极与基底基板接触。 源极焊盘部分形成在数据线的端部，源焊盘部分包括源极金属层，形成在源极金属层上的导电蚀刻停止层和形成在导电蚀刻停止层上的源极焊盘电极。 因此，源极焊盘部分的导电蚀刻停止层防止源极焊盘部分的源极金属层被损坏，并且源极焊盘部分的导电蚀刻停止层可以完全与源极焊盘电极接触。

公开(公告)号：US20080067603A1

公开(公告)日：2008-03-20

申请号：US11696097

申请日：2007-04-03

申请人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Yoon ,  Jeong-Min Park ,  Doo-Hee Jung ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

发明人： Jong-Hyun Choung ,  Hong-Sick Park ,  Joo-Ae Yoon ,  Jeong-Min Park ,  Doo-Hee Jung ,  Sun-Young Hong ,  Bong-Kyun Kim ,  Won-Suk Shin ,  Byeong-Jin Lee

IPC分类号： H01L21/00 ,  H01L29/76

CPC分类号： H01L27/1288 ,  H01L27/1214

摘要： A method of manufacturing a thin film transistor array panel, including: forming gate lines on a substrate; forming a gate insulating layer on the gate lines; forming semiconductor layers on the gate insulating layer; forming data lines and drain electrodes on the semiconductor layers; depositing a passivation layer on the data lines and the drain electrodes; forming a first photoresist layer including a first portion and a second portion that is thinner than the first portion on the passivation layer; forming a first preliminary contact hole exposing the data lines by etching the passivation layer by using the first photoresist layer as a mask; removing the second portion of the first photoresist; forming a first contact hole by expanding the first preliminary contact hole and opening portions by etching the passivation layer by using the first portion of the first photoresist layer as a mask; depositing a conductor layer; and forming pixel electrodes in the opening portions and a first contact assistant member in the first contact hole by removing the first photoresist layer and the conductor layer located thereon.

摘要翻译： 一种制造薄膜晶体管阵列面板的方法，包括：在衬底上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 形成第一光致抗蚀剂层，其包括比钝化层上的第一部分更薄的第一部分和第二部分; 通过使用第一光致抗蚀剂层作为掩模，形成通过蚀刻钝化层而暴露数据线的第一预接触孔; 去除第一光致抗蚀剂的第二部分; 通过使用第一光致抗蚀剂层的第一部分作为掩模，通过蚀刻钝化层来扩展第一预接触孔和开口部来形成第一接触孔; 沉积导体层; 以及通过去除位于其上的第一光致抗蚀剂层和导体层，在开口部分中形成像素电极和第一接触孔中的第一接触辅助部件。