公开(公告)号：US07129440B2

公开(公告)日：2006-10-31

申请号：US11185649

申请日：2005-07-20

申请人： Bruce E. Adams ,  Dean Jennings ,  Abhilash J. Mayur ,  Vijay Parihar ,  Joseph M. Ranish

发明人： Bruce E. Adams ,  Dean Jennings ,  Abhilash J. Mayur ,  Vijay Parihar ,  Joseph M. Ranish

IPC分类号： B23K26/06 ,  G02B6/10

CPC分类号： G02B6/003 ,  G02B6/0046 ,  G02B6/0056 ,  G02B6/0068

摘要： Apparatus for thermally processing a semiconductor wafer includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.

摘要翻译： 用于热处理半导体晶片的装置包括布置成沿着慢轴延伸的多个平行列的半导体激光发射器的阵列，多个相应的柱形透镜，覆盖相应行的激光发射器，用于沿着快轴准直来自相应行的光 垂直于慢轴的均质化光管，其具有在第一端处的输入面用于接收来自多个柱面透镜的光和相对端的输出面，所述光管包括在输入和输出之间延伸的一对反射壁 并且沿着慢轴的方向彼此分离;以及扫描装置，用于在平行于快轴的扫描方向上扫描从均匀化光管发射的光，跨过晶片。

公开(公告)号：US08586893B2

公开(公告)日：2013-11-19

申请号：US12075798

申请日：2008-03-12

申请人： Bruce E. Adams ,  Dean Jennings ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Vijay Parihar

发明人： Bruce E. Adams ,  Dean Jennings ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Vijay Parihar

IPC分类号： B23K26/04 ,  B23K26/03 ,  B23K26/42

CPC分类号： B23K26/032 ,  B23K26/03 ,  B23K26/0604 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/702 ,  B23K2101/40

摘要： A system for thermal processing of a substrate includes a source of radiation, optics disposed between the source and the substrate to receive light from the source of radiation at the optics proximate end, and a housing holding the optics and having a void inside the housing isolated from light emitted from the source. A light detector is disposed within the void in the housing to detect light from the optics emitted into the housing and send a deterioration signal. The system further includes a power supply for the source of radiation, and a controller to control the power supply based on the deterioration signal from the light detector.

摘要翻译： 用于衬底的热处理的系统包括辐射源，设置在光源和衬底之间的光学器件，以在光学器件的近端处接收来自辐射源的光，以及保持光学元件并且在壳体内部具有空隙的壳体 从光源发出的光。 光检测器设置在外壳中的空隙内，以检测发射到壳体中的光学器件的光并发出劣化信号。 该系统还包括用于辐射源的电源，以及控制器，用于基于来自光检测器的劣化信号来控制电源。

公开(公告)号：US20120238111A1

公开(公告)日：2012-09-20

申请号：US13485699

申请日：2012-05-31

申请人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

发明人： Dean Jennings ,  Haifan Liang ,  Mark Yam ,  Vijay Parihar ,  Abhilash J. Mayur ,  Aaron Hunter ,  Bruce Adams ,  Joseph Michael Ranish

IPC分类号： H01L21/268

CPC分类号： B23K26/0608 ,  B23K26/0604 ,  B23K26/0613 ,  B23K26/073 ,  B23K26/0732 ,  B23K26/0736 ,  B23K26/0738 ,  B23K26/352 ,  H01L21/02675 ,  H01L21/2026 ,  H01L21/268 ,  H01L21/324

摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.

公开(公告)号：US20090152247A1

公开(公告)日：2009-06-18

申请号：US12291002

申请日：2008-11-04

申请人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P.S. Thakur

发明人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P.S. Thakur

IPC分类号： B23K26/00

CPC分类号： B23K26/0738 ,  B23K26/0613 ,  B23K26/0676 ,  H01L21/268 ,  H01L29/7833 ,  Y10T117/1016

摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

摘要翻译： 用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。 光源包括大致以发射器的连续行布置的激光发射器的阵列，该列横向于快轴。 多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。 所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。 将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

公开(公告)号：US07438468B2

公开(公告)日：2008-10-21

申请号：US11195380

申请日：2005-08-02

申请人： Bruce E. Adams ,  Dean Jennings ,  Aaron M. Hunter ,  Abhilash J. Mayur ,  Vijay Parihar ,  Timothy N. Thomas

发明人： Bruce E. Adams ,  Dean Jennings ,  Aaron M. Hunter ,  Abhilash J. Mayur ,  Vijay Parihar ,  Timothy N. Thomas

IPC分类号： G01J5/02

CPC分类号： G02B5/281 ,  G01J5/06 ,  H01S5/005 ,  H01S5/4012

摘要： A thermal processing system includes a source of laser radiation emitting at a laser wavelength, beam projection optics disposed between the reflective surface and a substrate support capable of holding a substrate to be processed, a pyrometer responsive to a pyrometer wavelength, and a wavelength responsive optical element having a first optical path for light in a first wavelength range including the laser wavelength, the first optical path being between the source of laser radiation and the beam projection optics, and a second optical path for light in a second wavelength range including the pyrometer wavelength, the second optical path being between the beam projection optics and the pyrometer. The system can further include a pyrometer wavelength blocking filter between the source of laser radiation and the wavelength responsive optical element.

摘要翻译： 热处理系统包括以激光波长发射的激光辐射源，设置在反射表面和能够保持要处理的衬底的基板支撑件之间的光束投影光学器件，响应于高温计波长的高温计和波长响应光学 元件，其具有用于包括激光波长的第一波长范围内的光的第一光路，所述第一光路位于激光辐射源和光束投影光学器件之间，以及用于在包括高温计的第二波长范围内的光的第二光路 波长，第二光路位于光束投影光学器件和高温计之间。 该系统还可以包括在激光辐射源和波长响应光学元件之间的高温计波长阻挡滤波器。

公开(公告)号：US20080217306A1

公开(公告)日：2008-09-11

申请号：US12075798

申请日：2008-03-12

申请人： Bruce E. Adams ,  Dean Jennings ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Vijay Parihar

发明人： Bruce E. Adams ,  Dean Jennings ,  Aaron Muir Hunter ,  Abhilash J. Mayur ,  Vijay Parihar

IPC分类号： B23K26/04

CPC分类号： B23K26/032 ,  B23K26/03 ,  B23K26/0604 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/702 ,  B23K2101/40

摘要： A system for thermal processing of a substrate includes a source of radiation, optics disposed between the source and the substrate to receive light from the source of radiation at the optics proximate end, and a housing holding the optics and having a void inside the housing isolated from light emitted from the source. A light detector is disposed within the void in the housing to detect light from the optics emitted into the housing and send a deterioration signal. The system further includes a power supply for the source of radiation, and a controller to control the power supply based on the deterioration signal from the light detector.

摘要翻译： 用于衬底的热处理的系统包括辐射源，设置在光源和衬底之间的光学器件，以在光学器件的近端处接收来自辐射源的光，以及保持光学元件并且在壳体内部具有空隙的壳体 从光源发出的光。 光检测器设置在外壳中的空隙内，以检测发射到壳体中的光学器件的光并发出劣化信号。 该系统还包括用于辐射源的电源，以及控制器，用于基于来自光检测器的劣化信号来控制电源。

公开(公告)号：US07422988B2

公开(公告)日：2008-09-09

申请号：US11185454

申请日：2005-07-20

申请人： Bruce E. Adams ,  Dean Jennings ,  Aaron M. Hunter ,  Abhilash J. Mayur ,  Vijay Parihar

发明人： Bruce E. Adams ,  Dean Jennings ,  Aaron M. Hunter ,  Abhilash J. Mayur ,  Vijay Parihar

IPC分类号： H01L21/00 ,  B23K26/04

CPC分类号： B23K26/032 ,  B23K26/03 ,  B23K26/0604 ,  B23K26/0676 ,  B23K26/0738 ,  B23K26/702 ,  B23K2101/40

摘要： A thermal processing system includes a source of laser radiation having an array of lasers emitting light at a laser wavelength, a substrate support, optics disposed between said source and said substrate support for forming a line beam in a substrate plane of the substrate support from the light emitted by the source of laser radiation, and scanning apparatus for effecting movement of said line beam relative to said substrate support in a direction transverse to the longitudinal axis of said line beam. The system further includes a housing encompassing said optics, a light detector disposed inside said housing for sensing an ambient light level, a power supply coupled to the source of laser radiation, and a controller governing said power supply and responsive to said light detector for interrupting said power supply upon an increase in the output of said light detector above a threshold ambient level.

摘要翻译： 热处理系统包括激光辐射源，其具有发射激光波长的光的激光阵列，衬底支撑件，设置在所述源极和所述衬底支撑件之间的光学器件，用于在衬底支撑件的衬底平面中形成线束 由激光辐射源发射的光以及用于在垂直于所述线束的纵向轴线的方向上相对于所述衬底支撑件实现所述线束的运动的扫描装置。 该系统还包括包围所述光学元件的壳体，设置在所述壳体内用于感测环境光级别的光检测器，耦合到激光辐射源的电源，以及控制所述电源并响应于所述光检测器中断的控制器 所述电源在所述光检测器的输出增加超过阈值环境水平时。

公开(公告)号：US20080210671A1

公开(公告)日：2008-09-04

申请号：US11508781

申请日：2006-08-23

申请人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

发明人： Dean Jennings ,  Abhilash J. Mayur ,  Timothy N. Thomas ,  Vijay Parihar ,  Vedapuram S. Achutharaman ,  Randhir P. S. Thakur

IPC分类号： B23K26/00

CPC分类号： B23K26/0738 ,  B23K26/0613 ,  B23K26/0676 ,  H01L21/268 ,  H01L29/7833 ,  Y10T117/1016

摘要： A dynamic surface anneal apparatus for annealing a semiconductor workpiece has a workpiece support for supporting a workpiece, an optical source and scanning apparatus for scanning the optical source and the workpiece support relative to one another along a fast axis. The optical source includes an array of laser emitters arranged generally in successive rows of the emitters, the rows being transverse to the fast axis. Plural collimating lenslets overlie respective ones of the rows of emitters and provide collimation along the fast axis. The selected lenslets have one or a succession of optical deflection angles corresponding to beam deflections along the fast axis for respective rows of emitters. Optics focus light from the array of laser emitters onto a surface of the workpiece to form a succession of line beams transverse to the fast axis spaced along the fast axis in accordance with the succession of deflection angles.

摘要翻译： 用于退火半导体工件的动态表面退火装置具有用于支撑工件的工件支撑件，用于沿着快轴相对于彼此扫描光源和工件支撑件的光源和扫描装置。 光源包括大致以发射器的连续行布置的激光发射器的阵列，这些行横向于快轴。 多个准直的小透镜叠加在发射器排中的相应行上，并沿着快轴提供准直。 所选择的小透镜具有对应于沿着快轴的光束偏转的相应行发射器的一个或一系列光学偏转角。 将来自激光发射器阵列的光聚焦到工件的表面上，以根据偏转角的顺序形成一系列沿着快轴间隔开的快轴的线束。

公开(公告)号：US20070032082A1

公开(公告)日：2007-02-08

申请号：US11199592

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/302

CPC分类号： H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

摘要翻译： 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。

公开(公告)号：US20070032004A1

公开(公告)日：2007-02-08

申请号：US11199570

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/8234

CPC分类号： H01L21/76877 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873

摘要： A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.