公开(公告)号：US20080053236A1

公开(公告)日：2008-03-06

申请号：US11848319

申请日：2007-08-31

申请人： Bishnu Gogoi ,  Navid Yazdi

发明人： Bishnu Gogoi ,  Navid Yazdi

IPC分类号： G01L9/12 ,  H01G9/00

CPC分类号： G01L9/0042 ,  B81B2201/0264 ,  B81C1/00158 ,  G01L9/0073 ,  H01G5/16 ,  Y10T29/417

摘要： A capacitive pressure sensor and method for its fabrication. The sensor is fabricated from first and second wafers to have a mechanical capacitor comprising a fixed electrode and a moving electrode defined by a conductive plate. The sensor further has a diaphragm on a surface of the first wafer that is mechanically coupled but electrically insulated from the conductive plate. A conductive layer on the surface of the first wafer is spaced apart from the conductive plate to define the fixed electrode. The second wafer is bonded to the first wafer and carries interface circuitry for the sensor, including the conductive plate and the fixed electrode which are between the first and second wafers and electrically connected to the interface circuitry. At least an opening is present in the first wafer and its first conductive layer by which the diaphragm is released and exposed to an environment surrounding the sensor.

摘要翻译： 一种电容式压力传感器及其制造方法。 传感器由第一和第二晶片制成，以具有由导电板限定的固定电极和移动电极的机械电容器。 传感器还在第一晶片的表面上具有机械耦合但与导电板电绝缘的隔膜。 第一晶片的表面上的导电层与导电板间隔开以限定固定电极。 第二晶片被结合到第一晶片并且承载用于传感器的接口电路，包括在第一和第二晶片之间的导电板和固定电极，并且电连接到接口电路。 至少一个开口存在于第一晶片及其第一导电层中，隔离膜通过该第一导电层被释放并暴露于围绕传感器的环境中。

公开(公告)号：US20070232011A1

公开(公告)日：2007-10-04

申请号：US11395839

申请日：2006-03-31

申请人： Bishnu Gogoi ,  Richard De Souza ,  Xiaowei Ren

发明人： Bishnu Gogoi ,  Richard De Souza ,  Xiaowei Ren

IPC分类号： H01L21/20

CPC分类号： H01L27/0629 ,  H01L27/0805 ,  H01L28/60

摘要： A method of forming a semiconductor component (100) having an active semiconductor device (680) above a passive device (470) includes providing a semiconductor wafer (110) having an upper surface (115), forming a trench (216) in the upper surface of the semiconductor wafer, forming a cavity (317) in the semiconductor wafer below the trench, forming the passive device in the cavity; and forming at least a portion of the active semiconductor device in the semiconductor wafer and above the passive device.

摘要翻译： 一种在无源器件（470）上方形成具有有源半导体器件（680）的半导体元件（100）的方法包括提供具有上表面（115）的半导体晶片（110），在上表面形成沟槽（216） 半导体晶片的表面，在沟槽下方的半导体晶片中形成空腔（317），在空腔中形成无源器件; 以及在所述半导体晶片中以及所述无源器件之上形成所述有源半导体器件的至少一部分。

公开(公告)号：US20070221120A1

公开(公告)日：2007-09-27

申请号：US11578975

申请日：2005-04-20

申请人： Bernard Diem ,  Eugene Blanchet ,  Bishnu Gogoi

发明人： Bernard Diem ,  Eugene Blanchet ,  Bishnu Gogoi

IPC分类号： C30B33/00

CPC分类号： H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： The invention relates to inter-level realignment after a stage of epitaxy on a face (31) of a substrate (30), comprising the production of at least one initial guide mark (32) on the face of the substrate, this initial guide mark being designed so as to be transferred, during epitaxy, onto the surface of the epitaxied layer (36). The initial guide mark (32) is produced in such a way that, during epitaxy, its edges create growth defects that propagate as far as the surface of the epitaxied layer (36) to provide a transferred guide mark (37) on the surface of the epitaxied layer (36) reproducing the shape of the initial guide mark (32) and in alignment with the initial guide mark.

摘要翻译： 本发明涉及在衬底（30）的表面（31）上的外延阶段之后的级间重新对准，包括在衬底的表面上产生至少一个初始引导标记（32），该初始引导标记 被设计成在外延期间被转移到所述表面层（36）的表面上。 产生初始指引标记（32），使得在外延期间，其边缘产生生长缺陷，该生长缺陷传播到所述表面层（36）的表面，以在所述表面的表面上提供转移的引导标记（37） 所述表面层（36）再现所述初始引导标记（32）的形状并与所述初始引导标记对准。

公开(公告)号：US20070200253A1

公开(公告)日：2007-08-30

申请号：US11363622

申请日：2006-02-28

申请人： Bishnu Gogoi ,  Vijay Sarihan

发明人： Bishnu Gogoi ,  Vijay Sarihan

IPC分类号： H01L23/48

CPC分类号： H01L23/49503 ,  B81B7/0048 ,  H01L23/49513 ,  H01L23/49548 ,  H01L24/16 ,  H01L24/31 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/97 ,  H01L2224/13099 ,  H01L2224/16245 ,  H01L2224/29111 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/73257 ,  H01L2224/81192 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/157 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/13111 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： Methods are provided for forming an electronic assembly (54). At least one depression (38) is formed in a surface of a substrate (20). A contact formation (44) is placed in the depression. A microelectronic die (46) is attached to the substrate using the contact formation. An electronic assembly is also provided. The invention further provides an electronic assembly. The electronic assembly includes a substrate having a plurality of depressions formed thereon, a microelectronic die having a microelectronic device formed therein, and a plurality of contact formations bonded to and interconnecting the substrate and the microelectronic die. Each of the contact formations are positioned within a respective depression on the substrate.

摘要翻译： 提供了用于形成电子组件（54）的方法。 在基板（20）的表面形成有至少一个凹部（38）。 接触形式（44）被放置在凹陷中。 使用接触形式将微电子管芯（46）附接到基板。 还提供电子组件。 本发明还提供一种电子组件。 电子组件包括其上形成有多个凹陷的基板，具有形成在其中的微电子器件的微电子管芯，以及多个结合到基板和微电子管芯上的接触结构。 每个接触层位于衬底上相应的凹陷内。

公开(公告)号：US20070090474A1

公开(公告)日：2007-04-26

申请号：US11222547

申请日：2005-09-08

申请人： Gary Li ,  Bishnu Gogoi ,  Hemant Desai ,  Jonathan Hammond ,  Bernard Diem

发明人： Gary Li ,  Bishnu Gogoi ,  Hemant Desai ,  Jonathan Hammond ,  Bernard Diem

IPC分类号： H01L29/82

CPC分类号： B81B3/0078 ,  B81B2203/0118 ,  B81C2201/0109 ,  B81C2201/0167

摘要： A MEMS device and method of fabrication including a plurality of structural tie bars for added structural integrity. The MEMS device includes an active layer and a substrate having an insulating material formed therebetween, first and second pluralities of stationary electrodes and a plurality of moveable electrodes in the active layer. A plurality of interconnects are electrically coupled to a second surface of each of the first and second pluralities of stationary electrodes. A plurality of anchors fixedly attach a first surface of each of the first and second pluralities of stationary electrodes to the substrate. A first structural tie bar couples a second surface of each of the first plurality of stationary electrodes and a second structural tie bar couples a second surface of each of the second plurality of stationary electrodes.

摘要翻译： 一种MEMS器件和制造方法，包括多个用于增加结构完整性的结构连接条。 MEMS器件包括有源层和在其间形成有绝缘材料的衬底，第一和第二多个固定电极以及有源层中的多个可移动电极。 多个互连件电耦合到第一和第二多个固定电极中的每一个的第二表面。 多个锚固体将第一和第二多个固定电极中的每一个的第一表面固定地附接到基板。 第一结构连接杆联接第一多个固定电极中的每一个的第二表面，并且第二结构连接条连接第二多个固定电极中的每一个的第二表面。

公开(公告)号：US20070075445A1

公开(公告)日：2007-04-05

申请号：US11239783

申请日：2005-09-30

申请人： Bishnu Gogoi

发明人： Bishnu Gogoi

IPC分类号： H01L21/20

CPC分类号： H01L21/764 ,  H01L27/08 ,  H01L28/10

摘要： According to one aspect of the present invention, a method is provided for forming a microelectronic assembly. The method comprises forming first and second trenches on a semiconductor substrate, filling the first and second trenches with an etch stop material, forming an inductor on the semiconductor substrate, forming an etch hole in at least one of the etch stop layer and the semiconductor substrate to expose the substrate between the first and second trenches, isotropically etching the substrate between the first and second trenches through the etch hole to create a cavity within the substrate, and forming a sealing layer over the etch hole to seal the cavity.

公开(公告)号：US20060144143A1

公开(公告)日：2006-07-06

申请号：US11029951

申请日：2005-01-04

申请人： Bishnu Gogoi ,  Bernard Diem

发明人： Bishnu Gogoi ,  Bernard Diem

IPC分类号： G01P3/44

CPC分类号： B81B7/0058 ,  B81B3/0051 ,  B81B2201/0235 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

摘要： A microelectromechanical (MEM) device includes a substrate, a structure, a travel stop, and a protective cap. The substrate has a surface, and the structure is coupled to, and movably suspended above, the substrate surface. The structure has at least an outer surface, and the travel stop coupled to the structure outer surface and movable therewith. The travel stop includes at least an inner peripheral surface that defines a cavity. The protective cap is coupled to the substrate and includes a stop section that is disposed at least partially within the travel stop cavity and is spaced apart from the travel stop inner peripheral surface. The travel stop and the protective cap stop section together limit movement of the structure in at least three orthogonal axes.

摘要翻译： 微机电（MEM）装置包括基板，结构，行驶挡块和保护盖。 衬底具有表面，并且该结构耦合到衬底表面并且可移动地悬挂在衬底表面上方。 该结构至少具有外表面，并且行进止动件联接到结构外表面并随其移动。 移动止动件至少包括限定空腔的内周表面。 保护盖联接到基板并且包括至少部分地设置在行进止动腔内并且与行进止动件内周面间隔开的止动部。 行程挡块和保护盖止动部分一起限制了至少三个正交轴的结构运动。