公开(公告)号：US06573191B1

公开(公告)日：2003-06-03

申请号：US09665664

申请日：2000-09-20

申请人： Takayuki Komiya ,  Shinji Nagashima ,  Shigeyoshi Kojima

发明人： Takayuki Komiya ,  Shinji Nagashima ,  Shigeyoshi Kojima

IPC分类号： H01L2131

CPC分类号： H01L21/02282 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/314 ,  H01L21/67109 ,  H01L21/6715 ,  Y10S414/135

摘要： Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

摘要翻译： 通过旋涂法形成第一绝缘膜和第二绝缘膜。 因此，可以在相同的SOD处理系统中进行第一绝缘膜和第二绝缘膜的形成。 此外，通过旋涂法上述第一绝缘膜和第二绝缘膜两者的形成可以提供良好的低介电常数性能和良好的第一绝缘膜和第二绝缘膜的附着力。

公开(公告)号：US06501191B2

公开(公告)日：2002-12-31

申请号：US09989080

申请日：2001-11-21

申请人： Takashi Tanaka ,  Shinji Nagashima ,  Hiroyuki Sakai

发明人： Takashi Tanaka ,  Shinji Nagashima ,  Hiroyuki Sakai

IPC分类号： C23C1600

CPC分类号： H01L21/67253 ,  C30B33/005

摘要： A heat treatment apparatus for applying a predetermined heat treatment to a substrate includes: for example, a dielectric low oxygen controlled cure unit (DLC unit) for forming an interlayer insulating film on a semiconductor wafer W; a hot plate for supporting the wafer W a predetermined distance apart from the surface thereof; a chamber for housing the wafer W; a gas collecting port formed in that portion of the hot plate which corresponds to the lower side of the wafer W when the wafer W is disposed on the hot plate; and an oxygen sensor for measuring the oxygen concentration in the gas collected from the gas collecting port. Since the oxygen concentration can be measured during the heat treatment to the wafer W, the characteristics of the interlayer insulating film formed can be maintained constant.

公开(公告)号：US5826129A

公开(公告)日：1998-10-20

申请号：US496319

申请日：1995-06-29

申请人： Keizo Hasebe ,  Shinji Nagashima ,  Norio Semba ,  Masami Akimoto ,  Yoshio Kimura ,  Naruaki Iida ,  Kouji Harada ,  Issei Ueda ,  Nobuo Konishi

发明人： Keizo Hasebe ,  Shinji Nagashima ,  Norio Semba ,  Masami Akimoto ,  Yoshio Kimura ,  Naruaki Iida ,  Kouji Harada ,  Issei Ueda ,  Nobuo Konishi

IPC分类号： H01L21/00 ,  G03D5/00

CPC分类号： H01L21/67173 ,  H01L21/67178 ,  H01L21/67184

摘要： This invention provides a substrate processing system including a cassette station on which at least one cassette containing a plurality of objects is placed, a process station including a plurality of process chambers for performing processing for the objects, and an object conveying unit for loading the objects into the process chambers and unloading the objects from the process chambers, a first object transfer unit for transferring the objects between the cassette station and the process station, and an interface section including an object waiting region where the objects wait, and a second object transfer unit for transferring the objects to the process station, wherein the process chambers in the process station are arranged around the object conveying unit, and the object conveying unit has a rotating shaft almost parallel to the vertical direction and can move up and down in the vertical direction along the rotating shaft and rotate about the rotating shaft.

摘要翻译： 本发明提供了一种基板处理系统，其包括：盒站，其上放置有至少一个包含多个物体的盒;处理站，包括用于对物体进行处理的多个处理室;以及物体传送单元，用于装载物体 进入处理室并从处理室卸载物体，第一物体传送单元，用于在物体站和处理站之间传送物体，以及接口部分，其包括物体等待的对象等待区域，以及第二物体传送 用于将物体传送到处理站的单元，其中处理站中的处理室围绕物体传送单元布置，物体传送单元具有几乎平行于垂直方向的旋转轴，并且可以在竖直方向上上下移动 沿着旋转轴的方向旋转并围绕旋转轴旋转。

公开(公告)号：US06827973B2

公开(公告)日：2004-12-07

申请号：US10025453

申请日：2001-12-26

申请人： Shinji Nagashima

发明人： Shinji Nagashima

IPC分类号： B05D312

CPC分类号： H01L21/6715

摘要： After a first processing solution is spread over the front surface of a substrate and the temperature of the front surface of the substrate is regulated at a predetermined substrate temperature, a second processing solution is spread over the front surface of the substrate. The second processing solution can be spread while the front surface temperature of the substrate is maintained at the predetermined substrate temperature. Hence, a layer insulating film with good adhesion properties can be formed uniformly on the front surface of the substrate, and the quantity of the processing solution to be used can be reduced.

摘要翻译： 在第一处理液分散在基板的前表面上并且将基板的前表面的温度调节到预定的基板温度之后，第二处理液分散在基板的前表面上。 第二处理液可以在衬底的前表面温度保持在预定衬底温度的情况下扩散。 因此，可以在基板的前表面上均匀地形成具有良好粘附性的层绝缘膜，并且可以减少所使用的处理溶液的量。

公开(公告)号：US06786974B2

公开(公告)日：2004-09-07

申请号：US10388610

申请日：2003-03-17

申请人： Takayuki Komiya ,  Shinji Nagashima ,  Shigeyoshi Kojima

发明人： Takayuki Komiya ,  Shinji Nagashima ,  Shigeyoshi Kojima

IPC分类号： C23C16000

CPC分类号： H01L21/02282 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/31058 ,  H01L21/312 ,  H01L21/314 ,  H01L21/67109 ,  H01L21/6715 ,  Y10S414/135

摘要： Both of a first insulating film and a second insulating film are formed by a spin coating method. Accordingly, the formation of the first insulating film and the second insulating film can be performed in the same SOD processing system. Moreover, the aforesaid formation of both of the first insulating film and the second insulating film by the spin coating method can provide favorable low dielectric constant properties and good adhesion of the first insulating film and the second insulating film.

摘要翻译： 通过旋涂法形成第一绝缘膜和第二绝缘膜。 因此，可以在相同的SOD处理系统中进行第一绝缘膜和第二绝缘膜的形成。 此外，通过旋涂法上述第一绝缘膜和第二绝缘膜两者的形成可以提供良好的低介电常数性能和良好的第一绝缘膜和第二绝缘膜的附着力。

公开(公告)号：US06665952B2

公开(公告)日：2003-12-23

申请号：US10382490

申请日：2003-03-07

申请人： Shinji Nagashima

发明人： Shinji Nagashima

IPC分类号： F26B700

CPC分类号： H01L21/67103

摘要： The present invention relates to a method for subjecting a substrate on which a coating film is formed to heat processing, and the method comprises the steps of heating the substrate to a predetermined high temperature and decreasing the temperature of the substrate to a predetermined low temperature, wherein in the step of decreasing the temperature of the substrate to the low temperature, a first step of decreasing the temperature of the substrate from the predetermined high temperature to a predetermined intermediate temperature and a second step of decreasing the temperature of the substrate from the intermediate temperature to the predetermined low temperature are performed separately. In the present invention, the step of decreasing the temperature of the substrate, which is heated to the high temperature, to the predetermined low temperature is divided into two stages as described above, and hence compared with a case where the temperature of the substrate is rapidly decreased nonstop from the high temperature to the low temperature, the temperature decreasing speed of the substrate is reduced, whereby cracks, a warp, and the like caused by the rapid cooling of the substrate can be prevented.

摘要翻译： 本发明涉及对其上形成有涂膜的基板进行加热处理的方法，该方法包括以下步骤：将基板加热到预定的高温并将基板的温度降低到预定的低温， 其中在将衬底的温度降低到低温的步骤中，将衬底的温度从预定的高温降低到预定的中间温度的第一步骤和从中间体降低衬底的温度的第二步骤 分别进行到预定低温的温度。 在本发明中，如上所述将被加热到高温的基板的温度降低到规定的低温的步骤分为两个阶段，因此与基板的温度为 从高温到低温不间断地迅速降低，基板的降温速度降低，从而可以防止由于基板的快速冷却而引起的裂纹，翘曲等。

公开(公告)号：US06605550B2

公开(公告)日：2003-08-12

申请号：US10154927

申请日：2002-05-28

申请人： Shinji Nagashima

发明人： Shinji Nagashima

IPC分类号： H01L2131

CPC分类号： H01L21/67017 ,  Y10T29/49808 ,  Y10T29/49826

摘要： In a hot plate for performing heat processing while an inert gas is supplied, a mounting table is provided with a groove and a lower end portion of a lid body can be inserted into the groove. The lid body is lowered in two steps by a lid body drive apparatus. The lid body forms a processing chamber between the lid body and the mounting table by the lowering of the first step, and the lower end portion of the lid body is inserted into the groove by the lowering of the second step, thereby reducing the processing chamber in capacity. Consequently, in a substrate processing apparatus which requires a supply of gas, it becomes possible to reduce the capacity of the processing chamber and to reduce the required amount of gas.