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公开(公告)号：US5826129A
公开(公告)日：1998-10-20
申请号：US496319
申请日：1995-06-29
申请人： Keizo Hasebe , Shinji Nagashima , Norio Semba , Masami Akimoto , Yoshio Kimura , Naruaki Iida , Kouji Harada , Issei Ueda , Nobuo Konishi
发明人： Keizo Hasebe , Shinji Nagashima , Norio Semba , Masami Akimoto , Yoshio Kimura , Naruaki Iida , Kouji Harada , Issei Ueda , Nobuo Konishi
CPC分类号： H01L21/67173 , H01L21/67178 , H01L21/67184
摘要： This invention provides a substrate processing system including a cassette station on which at least one cassette containing a plurality of objects is placed, a process station including a plurality of process chambers for performing processing for the objects, and an object conveying unit for loading the objects into the process chambers and unloading the objects from the process chambers, a first object transfer unit for transferring the objects between the cassette station and the process station, and an interface section including an object waiting region where the objects wait, and a second object transfer unit for transferring the objects to the process station, wherein the process chambers in the process station are arranged around the object conveying unit, and the object conveying unit has a rotating shaft almost parallel to the vertical direction and can move up and down in the vertical direction along the rotating shaft and rotate about the rotating shaft.
摘要翻译： 本发明提供了一种基板处理系统，其包括：盒站，其上放置有至少一个包含多个物体的盒;处理站，包括用于对物体进行处理的多个处理室;以及物体传送单元，用于装载物体 进入处理室并从处理室卸载物体，第一物体传送单元，用于在物体站和处理站之间传送物体，以及接口部分，其包括物体等待的对象等待区域，以及第二物体传送 用于将物体传送到处理站的单元，其中处理站中的处理室围绕物体传送单元布置，物体传送单元具有几乎平行于垂直方向的旋转轴，并且可以在竖直方向上上下移动 沿着旋转轴的方向旋转并围绕旋转轴旋转。
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公开(公告)号：US06503003B2
公开(公告)日：2003-01-07
申请号：US09816233
申请日：2001-03-26
IPC分类号： G03D504
摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.
摘要翻译： 将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。 半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。 在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。 因此，处理空间被溶剂雾填满。 在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。 在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。
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公开(公告)号：US06228561B1
公开(公告)日：2001-05-08
申请号：US08791618
申请日：1997-01-31
IPC分类号： G03F716
摘要： A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.
摘要翻译： 将抗蚀剂溶液的溶剂从溶剂供应喷嘴滴落到由旋转卡盘保持的半导体晶片的表面上。 半导体晶片通过旋转卡盘旋转，以将抗蚀剂溶液扩散到半导体晶片W的整个表面上。同时，将抗蚀剂溶液从抗蚀剂溶液供应喷嘴滴落到半导体晶片上并在溶剂之后扩散。 在处理过程中，通过关闭处理容器的盖子将处理空间与外部空气隔离，将喷射的溶剂供入处理空间。 因此，处理空间被溶剂雾填满。 在提供有溶剂的处理空间中，可以抑制溶剂从抗蚀剂溶液中的蒸发。 在半导体晶片W的边缘上形成具有均匀膜厚的抗蚀剂溶液膜。
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公开(公告)号：US5250114A
公开(公告)日：1993-10-05
申请号：US755781
申请日：1991-09-06
CPC分类号： H01L21/67173 , H01L21/6715 , H01L21/6719
摘要： A coating apparatus includes two spin chucks located in a single casing to support and rotate wafers. A waiting trench is located between the spin chucks to discharge that part of coating liquid which has been hardened at the tip of a nozzle. The wafers are loaded and unloaded to and from the spin chucks by a single carrying member located outside the casing. A coating liquid supply mechanism includes the single nozzle for dispensing coating liquid onto the wafers supported by the spin chucks. The nozzle is moved between the spin chucks by a moving arm. Processing cycles relative to the spin chucks are set for a same processing time and the processing cycle relative to one of the spin chucks is shifted from that relative to the other by a half cycle. The nozzle is rested on the waiting trench at the time when it does not dispense the coating liquid onto the wafers supported by the spin chucks.
摘要翻译： 涂覆装置包括位于单个壳体中的两个旋转卡盘，以支撑和旋转晶片。 等离子沟槽位于旋转卡盘之间，以排出在喷嘴尖端已经硬化的涂布液的那部分。 通过位于壳体外部的单个承载构件将晶片装载和卸载到旋转卡盘。 涂布液供给机构包括用于将涂布液分配到由旋转卡盘支撑的晶片上的单个喷嘴。 喷嘴通过移动臂在旋转卡盘之间移动。 相对于旋转卡盘的处理循环被设定为相同的处理时间，并且相对于其中一个旋转卡盘的处理循环相对于另一旋转卡盘的处理循环相对于另一旋转卡盘偏移半个周期。 在不将涂布液分配到由旋转卡盘支撑的晶片上时，喷嘴搁置在等待的沟槽上。
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公开(公告)号：US5416047A
公开(公告)日：1995-05-16
申请号：US93699
申请日：1993-07-20
申请人： Nobuo Konishi , Hideyuki Takamori , Masami Akimoto , Kiyohisa Tateyama , Masaaki Murakami , Norimitsu Morioka , Takashi Takekuma
发明人： Nobuo Konishi , Hideyuki Takamori , Masami Akimoto , Kiyohisa Tateyama , Masaaki Murakami , Norimitsu Morioka , Takashi Takekuma
CPC分类号： H01L21/67173 , H01L21/6715 , H01L21/6719 , Y10S430/136
摘要： A substrate solution-processing method comprising the steps of preparing a pair of spin chucks by which semiconductor wafers are supported, a housing by which the wafers supported by the spin chucks are enclosed, motor for rotating the spin chucks, a nozzle through which developing or resist solution is applied to each wafer, means for moving the nozzle between the wafers, and a waiting trench at which the nozzle is kept waiting, setting substantially same the times needed to finish the cycles of processing the wafers supported on at least two spin chucks and delaying one process cycle from the other, and keeping the nozzle waiting at the waiting trench unless developing or resist solution is applied to each wafer through the nozzle.
摘要翻译： 一种基板溶液处理方法，包括以下步骤：准备一对支撑半导体晶片的旋转卡盘，包围由旋转卡盘支撑的晶片的壳体，用于旋转旋转卡盘的马达，用于旋转旋转卡盘的马达， 将抗蚀剂溶液施加到每个晶片，用于在晶片之间移动喷嘴的装置以及喷嘴保持等待的等待沟槽，其设置与完成在至少两个旋转夹头上支撑的晶片的处理循环所需的时间基本相同 并且从另一个延迟一个处理周期，并且保持喷嘴等待在等待沟槽，除非通过喷嘴对每个晶片施加显影和抗蚀剂溶液。
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公开(公告)号：US20050026454A1
公开(公告)日：2005-02-03
申请号：US10927102
申请日：2004-08-27
IPC分类号： H01L21/20 , H01L21/768 , H01L21/4763 , H01L21/31 , H01L21/469 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76837 , H01L21/76825 , H01L21/76826 , H01L21/76828 , H01L21/76829
摘要： The present invention comprises the steps of performing a reforming process on a surface of a low dielectric constant insulation film formed on a substrate which includes one of a porous low dielectric constant insulation film and a non-porous low dielectric constant insulation film and forming an insulation film as at least one of an etching mask and a Chemical Mechanical Polishing stopper (CMP stopper) on the reformed surface of the low dielectric constant insulation film. For example, plasma is radiated as a reforming process mentioned above, the surface roughness of a low dielectric insulation film is increased and, as a result, adhesion between the films and also between the inter-layer insulation film and other neighboring films can be improved with so-called “anchor effect”.
摘要翻译： 本发明包括以下步骤：对形成在基板上的低介电常数绝缘膜的表面进行重整工序，该基板包括多孔低介电常数绝缘膜和无孔低介电常数绝缘膜之一，并形成绝缘层 薄膜作为低介电常数绝缘膜的重整表面上的蚀刻掩模和化学机械抛光终止剂（CMP止动器）中的至少一个。 例如，等离子体作为上述重整工序被照射，低介电绝缘膜的表面粗糙度增加，结果，可以改善膜之间以及层间绝缘膜和其它相邻膜之间的粘附性 具有所谓的“锚效应”。
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公开(公告)号：US6120361A
公开(公告)日：2000-09-19
申请号：US17368
申请日：1998-02-02
申请人： Nobuo Konishi , Mitsuaki Iwashita
发明人： Nobuo Konishi , Mitsuaki Iwashita
IPC分类号： B24B29/00
CPC分类号： B24B37/245
摘要： A polishing apparatus includes a polishing layer formed of forming resin and having a plurality of mechanical polishing particles contained in the polishing layer so as to be partially exposed from a polishing surface thereof. An object to be polished and the polishing layer are rotated relative to each other so that the object is polished with the mechanical polishing particles, in a state in which the object is allowed to contact with the polishing surface of the polishing layer.
摘要翻译： 抛光装置包括由形成树脂形成的抛光层，并且包含在抛光层中的多个机械抛光颗粒以从其抛光表面部分露出。 在物体与研磨层的研磨面接触的状态下，将要抛光的物体和抛光层相对于彼此旋转，从而物体被机械抛光颗粒抛光。
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公开(公告)号：US06106369A
公开(公告)日：2000-08-22
申请号：US186885
申请日：1998-11-06
申请人： Nobuo Konishi , Mitsuaki Iwashita
发明人： Nobuo Konishi , Mitsuaki Iwashita
摘要： A polishing system comprises: a rotating mounting table 14 which is rotatable while holding an object W to be polished; a rotating polishing plate 28 which has a smaller diameter than that of the rotating mounting table and which is provided with an abrasive layer 30 on the surface thereof; a scanning mechanism 26 for moving the rotating polishing plate in radial directions of the rotating mounting table while pressing the abrasive layer on the object; and abrasive solution supply means 46 for supplying an abrasive solution to the surface of the object. Thus, the system can be decreased in size, and the polished quantity can be partially controlled.
摘要翻译： 抛光系统包括：旋转安装台14，其可旋转，同时保持待抛光的物体W; 具有比旋转安装台的直径小的旋转研磨板28，并且在其表面上设置有研磨层30; 扫描机构26，用于在旋转的安装台的径向方向上移动旋转的抛光板，同时将研磨层按压在物体上; 以及用于将磨料溶液供给到物体表面的磨料溶液供给装置46。 因此，可以减小系统的尺寸，并且可以部分地控制抛光量。
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公开(公告)号：US07300598B2
公开(公告)日：2007-11-27
申请号：US10812102
申请日：2004-03-30
申请人： Nobuo Konishi , Takayuki Toshima , Takehiko Orii
发明人： Nobuo Konishi , Takayuki Toshima , Takehiko Orii
CPC分类号： H01L21/6708 , B08B3/024 , H01L21/67051
摘要： The invention relates to a process including a chemical liquid treatment and a rinse liquid treatment on a substrate, more particularly to a technique for reducing consumption of a chemical liquid while achieving uniform process and preventing particle generation. In a specific embodiment, the process is performed for removing a silicon oxide film formed on a silicon wafer. The process includes three subsequently performed steps, in which (1) diluted hydrofluoric acid (DHF), (2) DHF and de-ionized water (DIW), (3) DIW are supplied, respectively, onto a rotating wafer. Transition from step (1) to step (2) is done immediately before the hydrophilic silicon oxide film is dissolved to expose the underlying hydrophobic silicon layer.
摘要翻译： 本发明涉及一种包括在基材上的化学液体处理和漂洗液处理的方法，更具体地涉及一种在实现均匀的工艺并防止颗粒产生的同时减少化学液体的消耗的技术。 在具体实施例中，执行用于去除形成在硅晶片上的氧化硅膜的工艺。 该方法包括三个随后执行的步骤，其中（1）稀释的氢氟酸（DHF），（2）DHF和去离子水（DIW），（3）DIW分别供应到旋转的晶片上。 在亲水性氧化硅膜溶解之前立即进行从步骤（1）到步骤（2）的转变，以露出下面的疏水硅层。
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公开(公告)号：US06300043B1
公开(公告)日：2001-10-09
申请号：US09200742
申请日：1998-11-30
申请人： Nobuo Konishi , Keizo Hirose
发明人： Nobuo Konishi , Keizo Hirose
IPC分类号： G03F700
摘要： A method of forming a resist film comprises (a) forming a resist film on a substrate, and (b) removing a surface region of the resist film formed in the step (a) so as to decrease the thickness of the resist film.
摘要翻译： 形成抗蚀剂膜的方法包括：（a）在基板上形成抗蚀剂膜，和（b）去除在步骤（a）中形成的抗蚀剂膜的表面区域，以降低抗蚀剂膜的厚度。
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