摘要:
A non-volatile semiconductor memory device is provided, which comprises a memory array comprising memory cells, in which each memory cell is capable of storing data values depending on the voltages thereof, the data values include a first data value corresponding to a first voltage range and a second data value corresponding to a second voltage range, and the first data is written in a memory cell of the memory cells, a determination section for determining whether a voltage value of the memory cell is higher or lower than a reference value set between a maximum value and a minimum value of the first voltage range, and a rewrite section for rewriting the first data into the memory cell based on a determination result of the determination section so that a margin between the first voltage range and the second voltage range in the memory cell is enlarged.
摘要:
A hollow fiber membrane cartridge comprises a bundle of a plurality of hollow fiber membranes, both ends of which are fixed by adhesion, a cartridge head fixed at the periphery of the bundle at one end so as not to permit the passage of liquid either in or out, and a bottom ring fixed at the periphery of the bundle at the other end so as not to permit the passage of liquid either in or out, wherein the cartridge head and the bottom ring are not connected and fixed but are separated, the hollow portion at the end of each hollow fiber membrane on the cartridge head side is open, the hollow portion at the end of each hollow fiber membrane on the bottom ring side is sealed, and a plurality of through-holes are provided in an adhesion and fixation layer on the bottom ring side.
摘要:
A 16 Mbit DRAM of the invention is made up of a nexus of four 4 Mbit DRAM chips which are formed adjacent to one another on the wafer and each constitute an individual 4 Mbit DRAM, the connection between the 4 Mbit DRAMs is formed through a short-circuit protecting circuit provided within each 4 Mbit DRAM and an interconnection/controller circuit portion formed in the dicing area between the 4 Mbit DRAMs. When the nexus is cut along the dicing area containing the interconnection/controller circuit portion, 4 Mbit DRAM chips and/or 8 Mbit DRAM chips can be produced as desired.
摘要:
A very useful data transmission system having a plurality of transmission modules connected to a single cable in a multidrop manner is disclosed herein. The system features its ability to check the transmission state at the level of individual modules through use of a proper code notation (typically, Manchester code). The system detects a specific module with proper signals lasting at the same level for more than a given time, except cable outputs, and treats it as involving a faulty condition and compels the transmission state to a halt, thus preventing only the faulty module or modules from transmitting signals thereby avoiding breakdown of the whole system.
摘要:
A data transmission method over building wiring includes a plurality of transmission sections. One of these sections is selected from the plurality of transmission sections to be a data transmission source machine for providing data. The data is transmitted from the data transmission source to the remaining transmission sections. If a transmission section is not selected it is used to relay the data to one of the remaining transmission sections wherein it is received by a final data transmission section. A data transmission section used in the method, comprises a data receiving part for receiving the transmitted data, a relay counter part for counting the number of relaying the transmitted data, and data relaying part for steps of relaying the-received data.
摘要:
A process for sintering cubic system silicon carbide powder, which comprises compacting a mixture of cubic system silicon carbide powder with more than 1% by weight and not more than 3% by weight of carbon and at least 0.10% by weight and less than 0.3% by weight of boron and sintering the compact thereby obtained, under vacuum or in a chemically inert atmosphere at a temperature of from 1,900.degree. to 2,200.degree. C.
摘要:
A system transmits and receives control signals for various types of indoor devices using the existing power wiring in houses and buildings. The transmitter section of the power wiring transmission system is provided with a circuit in which the output of a sine wave oscillator is fed to an emitter-follower through a photocoupler and this output is then fed to the indoor power distribution line through a series resonance circuit after stepping down with a transformer; and the receiving section is provided with a circuit in which the signal from the distribution line is fed to a parallel resonance circuit after passing through a series resonance circuit. Moreover, the input and output sections are resistor terminated.
摘要:
A method of producing silicon carbide is provided. The method includes heating a cured product of a curable silicone composition in a non-oxidizing atmosphere at a temperature exceeding 1,500° C. but not more than 2,600° C. The method is capable of producing high-purity silicon carbide simply and at a high degree of productivity, and is capable of simply producing a silicon carbide molded item having a desired shape and dimensions.
摘要:
An in-order state queue holds store tags as in-order information about store instructions. A temporal store cache, which uses store addresses as indexes, holds store tags and store values. A first retrieving unit retrieves store tags preceding a load tag. A second retrieving unit compares the store tag read from the temporal store cache according to the address for the load instruction with the store tag from the first retrieving unit and, when they coincide with each other, outputs a hit signal.
摘要:
The present invention is to provide a method for designating a memory bank to be refreshed efficiently and a start and termination procedure of a self-refresh. In a dynamic RAM including a plurality of memory banks 200A, 200B, memory access actions being allowed to be independently on the respective memory banks, and a refresh control circuit for allowing the plurality of memory banks 200A, 200B to be refreshed in a lump and for allowing one memory bank 200A or 200B of the plurality of memory banks designated to be refreshed, a semiconductor memory device is configured such that when a row address input terminal or one of specific input terminals other than the row address input terminal is at a high level, the plurality of memory banks are refreshed in a lump; and when the row address input terminal or one of specific input terminals other than the row address input terminal is at a low level, one of the plurality of memory banks is designated to be refreshed in accordance with a bank selecting bit composed of one bit or a combination of a plurality of bits of row addresses other than the row address.