公开(公告)号：US08615732B2

公开(公告)日：2013-12-24

申请号：US11516023

申请日：2006-09-05

申请人： Atsushi Kaneko ,  Hans E. E. Kedefors

发明人： Atsushi Kaneko ,  Hans E. E. Kedefors

IPC分类号： G06F9/44

CPC分类号： G06F8/71 ,  G06F9/454

摘要： Methods and articles of manufacture for integrated, automatic pseudo localization of software applications are disclosed herein. A pseudo localization process, comprised of one or more utility applications, is integrated into a build cycle for a developing software application to generate pseudo-translated user-interface code as part of a build process. A build application may then generate a pseudo-language build of the developing software application and/or development database to enable testing and identification of internationalization defects that would prevent effective localization of the software product for the international market.

摘要翻译： 本文公开了用于软件应用的集成的，自动伪定位的方法和制造。 将一个或多个实用程序应用程序组成的伪定位过程集成到开发软件应用程序的构建周期中，以生成伪翻译的用户界面代码作为构建过程的一部分。 然后，构建应用程序可以生成开发的软件应用程序和/或开发数据库的伪语言构建，以便能够测试和识别将阻止软件产品在国际市场上的有效定位的国际化缺陷。

公开(公告)号：US08310005B2

公开(公告)日：2012-11-13

申请号：US13317781

申请日：2011-10-28

申请人： Yoshimitsu Murase ,  Kenya Kobayashi ,  Hideo Yamamoto ,  Atsushi Kaneko

发明人： Yoshimitsu Murase ,  Kenya Kobayashi ,  Hideo Yamamoto ,  Atsushi Kaneko

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/4236 ,  H01L29/66734

摘要： A semiconductor device includes a semiconductor layer, a first diffused region formed in the semiconductor layer, a second diffused region formed in the first diffused region, a trench formed in the semiconductor layer, a gate electrode disposed in the trench, a top surface of the gate electrode being lower than a top surface of the semiconductor layer and sagging downwards in a center thereof, a non-doped silicate glass film disposed in the trench and formed over the gate electrode, a top surface of the silicate glass film sagging downwards in a center thereof, an oxide film disposed in the trench and formed over the non-doped silicate glass film, a top surface of the oxide film sagging downwards in a center, and a source electrode formed over the semiconductor layer so that the source electrode contacts the first and second diffusion regions, and the oxide film at the top surface thereof.

公开(公告)号：US20110273834A1

公开(公告)日：2011-11-10

申请号：US13010475

申请日：2011-01-20

申请人： Takakatsu Moriai ,  Toyokazu Eguchi ,  Atsushi Kaneko ,  Atsushi Okada

发明人： Takakatsu Moriai ,  Toyokazu Eguchi ,  Atsushi Kaneko ,  Atsushi Okada

IPC分类号： G06F1/16

CPC分类号： G06F1/185 ,  G06F1/20 ,  H01L23/552 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/02 ,  H05K1/0298 ,  H05K3/0052 ,  H05K7/20472 ,  H05K2201/09145 ,  H05K2201/09936 ,  H05K2201/10409 ,  H01L2924/00

摘要： According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an integrally formed object having a relative dielectric constant of 5.8 is arranged between the first capacitor to cover a first radiating region containing the controller and the first nonvolatile semiconductor memories.

摘要翻译： 根据一个实施例，在第一散热构件布置在由与印刷电路板的一个表面相对的壳体的表面形成的第一电容器的平行平板和印刷电路板之间的状态下的耦合电容较小 在第一电容器之间布置有相对介电常数为5.8的整体形成的物体的状态下的耦合电容，以覆盖包含控制器的第一辐射区域和第一非易失性半导体存储器。

公开(公告)号：US07956409B2

公开(公告)日：2011-06-07

申请号：US12232074

申请日：2008-09-10

申请人： Hideo Yamamoto ,  Kenya Kobayashi ,  Atsushi Kaneko

发明人： Hideo Yamamoto ,  Kenya Kobayashi ,  Atsushi Kaneko

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L27/0727 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/7808

摘要： The present invention provides a vertical MOSFET which has striped trench gate structure which can secure avalanche resistance without increasing Ron. A vertical MOSFET 100 comprises a plurality of gate trenches 7 which is arranged in stripes, an array which is sandwiched with the plurality of gate trenches 7 and includes N+ source regions 4N+ and P+ base contact regions 5P+, and a diode region (anode region 6P+) which is formed so as to contact with two gate trenches 7. The N+ source regions 4N+ and the base contact regions 5P+ are alternately arranged along a longitudinal direction of the gate trench 7. Size of the diode region (anode region 6P+) corresponds to at least one of the N+ source regions 4N+ and two of the P+ base contact regions 5P+.

摘要翻译： 本发明提供了一种具有条纹沟槽栅极结构的垂直MOSFET，其可以在不增加Ron的情况下确保雪崩电阻。 垂直MOSFET100包括多个栅极沟槽7，栅极沟槽7被布置成阵列，该阵列夹在多个栅极沟槽7之间并包括N +源极区域4N +和P +基极接触区域5P +，二极管区域（阳极区域6P + ）形成为与两个栅极沟槽7接触.N +源极区域4N +和基极接触区域5P +沿着栅极沟槽7的纵向方向交替排列。二极管区域（阳极区域6P +）的尺寸对应于 N +源极区域4N +和P +基极接触区域5P + +中的至少一个。

公开(公告)号：US20080142799A1

公开(公告)日：2008-06-19

申请号：US11984796

申请日：2007-11-21

申请人： Atsushi Kaneko

发明人： Atsushi Kaneko

IPC分类号： H01L27/06 ,  H01L21/8234

CPC分类号： H01L29/7813 ,  H01L27/0255 ,  H01L27/0629 ,  H01L29/66734 ,  H01L29/7808 ,  H01L29/7811

摘要： Disclosed herewith is a semiconductor device comprising a trench gate electrode and a zener diode, as well as a method for manufacturing the same. The trench gate electrode is formed in a semiconductor body and includes a first polycrystalline silicon layer doped with impurities of a first conductivity type at a first concentration. An extended gate electrode is elongated over the semiconductor body in contact with the trench gate electrode, and includes a second polycrystalline silicon layer doped with impurities of the first conductivity type at a second concentration that is lower than the first concentration. The zener diode is formed over the semiconductor body and includes a third polycrystalline silicon layer of a first conductivity type and a fourth polycrystalline silicon layer of a second conductivity type. The first polycrystalline silicon of the trench gate electrode is formed independently while the second polycrystalline silicon of the extended gate electrode and the third polycrystalline silicon of the zener diode are formed simultaneously, thereby the number of manufacturing processes is suppressed from increasing while the designing freedom of the zener diode is improved.

摘要翻译： 本发明公开了一种包括沟槽栅电极和齐纳二极管的半导体器件及其制造方法。 沟槽栅电极形成在半导体本体中，并且包括以第一浓度掺杂有第一导电类型的杂质的第一多晶硅层。 延伸的栅电极在与沟槽栅电极接触的半导体本体上延伸，并且包括掺杂有低于第一浓度的第二浓度的第一导电类型的杂质的第二多晶硅层。 齐纳二极管形成在半导体本体上，并且包括第一导电类型的第三多晶硅层和第二导电类型的第四多晶硅层。 沟槽栅电极的第一多晶硅独立形成，同时形成扩展栅电极的第二多晶硅和齐纳二极管的第三多晶硅，从而抑制制造工艺的数量增加，同时设计自由度 齐纳二极管得到改进。

公开(公告)号：US20080135921A1

公开(公告)日：2008-06-12

申请号：US11984043

申请日：2007-11-13

申请人： Yoshimitsu Murase ,  Kenya Kobayashi ,  Hideo Yamamoto ,  Atsushi Kaneko

发明人： Yoshimitsu Murase ,  Kenya Kobayashi ,  Hideo Yamamoto ,  Atsushi Kaneko

IPC分类号： H01L29/788 ,  H01L21/76

CPC分类号： H01L29/7813 ,  H01L29/4236 ,  H01L29/66734

摘要： An epitaxial layer is formed on an n+ semiconductor substrate by epitaxial growth. A gate trench is formed to the surface of gate trench so that the bottom of gate trench reaches middle of the epitaxial layer. A gate insulator is formed on the inner wall of gate trench and a polysilicon is formed in the gate trench with the gate insulator interposed therebetween. An HTO film is formed on the surface of the polysilicon and the n− epitaxial layer. At this time, an ion plantation is performed to the epitaxial layer through the HTO film. Hence, a p diffused base layer, an n+ diffused source layer, an n+ diffused source layer is formed. A CVD oxide film is formed on the HTO film. After a BPSG having flowability is deposited on the CVD oxide film, the BPSG film is planarized with a heat treatment of 900-1100 degree Celsius.

摘要翻译： 通过外延生长在n +半导体衬底上形成外延层。 栅极沟槽形成在栅极沟槽的表面，使得栅极沟槽的底部到达外延层的中间。 栅极绝缘体形成在栅极沟槽的内壁上，并且栅极沟槽中形成多晶硅，栅极绝缘体插入其间。 在多晶硅和n外延层的表面上形成HTO膜。 此时，通过HTO膜对外延层进行离子种植。 因此，形成p扩散基极层，n +扩散源极层，n +扩散源极层。 在HTO膜上形成CVD氧化膜。 在具有流动性的BPSG沉积在CVD氧化物膜上之后，通过900-1100℃的热处理将BPSG膜平坦化。

公开(公告)号：US20050194574A1

公开(公告)日：2005-09-08

申请号：US11065073

申请日：2005-02-24

申请人： Masaaki Yamamuro ,  Takaaki Sato ,  Atsushi Kaneko

发明人： Masaaki Yamamuro ,  Takaaki Sato ,  Atsushi Kaneko

IPC分类号： B22D29/00 ,  C23C22/33 ,  C23C22/44 ,  C23C22/47 ,  C23C22/56 ,  B32B15/10 ,  H01B1/00

CPC分类号： C23C22/78 ,  C23C22/44 ,  C23C22/46 ,  C23C22/47 ,  C23C22/56 ,  C23C2222/10 ,  Y10T428/12535 ,  Y10T428/12743

摘要： There are provided aluminum elements covered on their surfaces with a coating film free from harmful hexavalent chromium compounds and fluorine compounds. Particularly, aluminum dicast and aluminum cast materials having excellent paint adherence and corrosion resistance are provided. The coating film for aluminum elements comprises (i) chromium, (ii) zinc and (iii) cobalt and/or titanium with 95% by mass or more of said chromium being a trivalent chromium.

摘要翻译： 在其表面上提供了铝元素，其中没有有害的六价铬化合物和氟化合物的涂膜。 特别地，提供具有优异的涂料粘附性和耐腐蚀性的铝组合和铝铸造材料。 用于铝元件的涂膜包括（i）铬，（ii）锌和（iii）具有95质量％以上的所述铬为三价铬的钴和/或钛。

公开(公告)号：US6042940A

公开(公告)日：2000-03-28

申请号：US988556

申请日：1997-11-12

申请人： Yoshimi Kano ,  Koji Seki ,  Atsushi Kaneko

发明人： Yoshimi Kano ,  Koji Seki ,  Atsushi Kaneko

IPC分类号： C09J9/00 ,  C09J11/06 ,  C09J129/04 ,  C09J139/00 ,  C09J139/06 ,  B32B7/12

CPC分类号： C09J11/06 ,  C09J139/00 ,  C09J9/00 ,  Y10T428/2852

摘要： A solid adhesive having adhesive resins, benzylidene sorbitol, isothyazoline preservatives, organic solvents, and about 25-60% water, the components being balanced such that the solid adhesive has good formability or shapability. A stick-shaped solid adhesive product made from the solid adhesive has a unique combination of shape-maintainability, bending strength, and crush strength.

摘要翻译： 具有粘合树脂的固体粘合剂，亚苄基山梨醇，异噻唑啉防腐剂，有机溶剂和约25-60％的水，所述组分是平衡的，使得固体粘合剂具有良好的成形性或成形性。 由固体粘合剂制成的棒状固体粘合剂产品具有形状可维持性，弯曲强度和压碎强度的独特组合。

公开(公告)号：US20140232070A1

公开(公告)日：2014-08-21

申请号：US13983331

申请日：2012-05-18

申请人： Yoshiaki Takigahira ,  Yoji Oshii ,  Atsushi Kaneko ,  Tetsuya Sato

发明人： Yoshiaki Takigahira ,  Yoji Oshii ,  Atsushi Kaneko ,  Tetsuya Sato

IPC分类号： F16J15/34

CPC分类号： F16J15/3404 ,  F16J15/3484 ,  F16J15/406

摘要： A pumping ring 46 producing an axial flow of sealed flow is secured to a rotary shaft 6 at an axial position different from a rotary ring 56 so that the sealed fluid positioned in the sealed space 33 flows along the axial direction of the rotary shaft 6. A discharge hole 14 is formed on an inner circumferential surface of a seal cover 8 positioned in the downstream side of the axial flow of the sealed fluid resulting from a rotation of the pumping ring 46. An inflow hole 15 is formed in the upstream side of the axial flow of the sealed fluid resulting from the rotation of the pumping ring 46, so that the sealed fluid discharged from the discharge hole 14 returns to the inside of the sealed space from the inflow hole 15. On the inner circumferential surface of the seal cover 8 provided with the discharge hole 14, a baffle member 18 is provided so that it protrudes radially inward in order to block the flow of the sealed fluid along the rotating direction of a retainer 52 and orient the sealed fluid toward the discharge hole 14.

摘要翻译： 产生密封流动的轴向流动的泵送环46在不同于旋转环56的轴向位置处固定到旋转轴6，使得位于密封空间33中的密封流体沿着旋转轴6的轴向流动。 在位于密封流体的轴向流动的下游侧的密封盖8的内周面上形成有排出孔14，该密封流体由泵送环46的旋转而产生。在流入孔15的上游侧形成有流入孔15 密封流体由泵送环46的旋转引起的轴向流动，使得从排出孔14排出的密封流体从流入孔15返回到密封空间的内部。在密封件的内周面上 设置有排放孔14的盖8设置有挡板构件18，以便径向向内突出，以阻挡密封流体沿着保持器52的旋转方向的流动， 密封流体朝向排出孔14。

公开(公告)号：US08665504B2

公开(公告)日：2014-03-04

申请号：US12734743

申请日：2008-11-21

申请人： Yasuhiro Awatsuji ,  Atsushi Kaneko ,  Takamasa Koyama ,  Tatsuki Tahara ,  Takeshi Wakamatsu

发明人： Yasuhiro Awatsuji ,  Atsushi Kaneko ,  Takamasa Koyama ,  Tatsuki Tahara ,  Takeshi Wakamatsu

IPC分类号： G03H1/12

CPC分类号： G03H1/0866 ,  G03H1/041 ,  G03H1/0443 ,  G03H1/12 ,  G03H2001/0447 ,  G03H2001/0452 ,  G03H2001/0458 ,  G03H2001/0469 ,  G03H2001/0471 ,  G03H2001/0875 ,  G03H2001/303 ,  G03H2222/34 ,  G03H2222/42 ,  G03H2222/45 ,  G03H2223/13 ,  G03H2223/15 ,  G03H2223/19 ,  G03H2225/35

摘要： A digital holography device includes a light source that emits light, the light source being provided for supply of object light beams formed by radiation, transmission, scattering, reflection, or diffraction of the emitted light from a subject, an array device that splits the light emitted from the light source into two kinds of reference light beams having different phases in a plane perpendicular to a direction in which the light emitted from the light source travels, a CCD camera having an image-capturing plane on which two kinds of interference fringe patterns are recorded, the interference fringe patterns being formed by interferences between the two kinds of reference light beams, and the object light beams, and an image reconstruction device that generates a reconstructed image of the subject from the two kinds of interference fringe patterns recorded on the image-capturing plane.

摘要翻译： 一种数字全息设备包括发光的光源，该光源被设置用于供应由被摄体发射的光的辐射，透射，散射，反射或衍射形成的物体光束，分离光 从与光源发出的光的行进方向垂直的平面中具有不同相位的两种基准光束，具有摄像面的CCD照相机，其具有两种干涉条纹图案 通过两种参考光束和对象光束之间的干扰形成的干涉条纹图案和从记录在对象光束上的两种干涉条纹图案生成被摄体的重建图像的图像重建装置被记录 图像捕获平面。