摘要:
An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.
摘要:
According to one embodiment, a recording medium controller includes a recording medium, an input module, a reading module, and a writing module. The recording medium includes a write area and an escape area. The write area includes track groups. Each of the track groups is a unit for writing data and includes tracks. The input module receives a write command for data. The reading module reads data stored in the escape area and data from a first track group of the track groups. The writing module writes data received for the write command to the escape area, and writes merged data obtained by merging the data read from the escape area and the data read from the first track group to each track of a second track group of the track groups by using a shingle recording technique in which adjacent tracks are partly overlapped with each other.
摘要:
A fixing device by fixing an image on a recording material at a nip portion, includes: an air blower which blows air sent by a fan on the neighborhood of an exit of the nip portion; a pressure contact and separation switching section which switches from a separated state in which a pressure member is separated from a fixing member to a pressure contact state in which the pressure member is in contact with the heating member at a moment that is earlier by a predetermined period of time than a time when a leading edge of the recording material arrives at the nip portion; and a controller which controls the fan to start its rotation within a first time period between a time when a changeover from the separated state to the pressure contact state is started and a time when the leading edge of the recording material arrives at the nip portion.
摘要:
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.
摘要:
A head-slider. The head-slider includes a slider, and a thin-film magnetic-recording head. The thin-film magnetic-recording head includes: a read element; a write element; a non-magnetic insulating protective layer disposed around both read and write elements; a resist disposed at a position further away from an air-bearing surface than the read element; and, a hard-material member including a material selected from the group consisting of silicon carbide and tungsten, which is disposed at a position further away from the air-bearing surface than the read element and the write element. Both an end of the resist and an end of the hard-material member overlap the write element when viewed in a stacking direction. A ratio of a distance from the air-bearing surface to a deepest end of the hard-material member to a distance from the air-bearing surface to a deepest end of the resist is at least 0.9.
摘要:
A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device comprises hetero semiconductor regions formed of polycrystalline silicon having a band gap width different from that of a drift region and hetero-adjoined with the drift region, a gate insulation film, a gate electrode adjoined to the gate insulation film, a source electrode connected to a source contact portion of the hetero semiconductor regions and an outermost switch structure and a repeating portion switch structure with a drain electrode connected to a substrate region. In a conduction state, the outermost switch structure comprises a mechanism in which the current flowing at the outermost switch structure becomes smaller than the current flowing at the repeating portion switch structure.
摘要:
The present invention provides a method of filling a powder into a powder supplying device including: a housing that accommodates the powder; a rotating member disposed rotatably within the housing; a sheet-shaped conveying member fixed to the rotating member, whose free end side region, which is different from a fixed portion, slidingly-contacts and moves along an inner wall of the housing by rotation of the rotating member to convey the powder; and a powder supply opening provided at the housing at a downstream side in a direction of conveying the powder, the method including filling, into the housing, the powder in an amount such that, at a time when usage of the powder supplying device starts, a height of the powder is greater than or equal to a height of a bottom surface of the rotating member.
摘要:
A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.
摘要:
A browsing method by which within-site browsing and within-screen browsing can be switched over to each other without making the user conscious of it is provided. A control means superposes and superposingly displays a Web page and a pointer moving in response to the operation applied to a pointing device (3) and arrow keys (4) on a display (2) in the within-screen browsing. If the pointer moves out of the area, the area of the Web page to be displayed on the display (2) is changed. The control means also changes the area of the Web page displayed on the display (2) in response to the operation applied to the pointing device (3) and the arrow keys (4) in the within-site browsing. The control means then changes the within-screen browsing to the within-site browsing and vice versa.
摘要:
An inspecting method includes registering a pre-obtained relationship between contact time of probes with a target object having a predetermined temperature and tip positions of the probes which vary in accordance with the contact time. The method further includes inspecting one or more chips at a time by estimating the tip positions of the probes based on the relationship and the contact time of the probes with the one or more chips and then correcting the tip positions of the probes from previous tip positions based on the estimated tip positions until the probes are stable without being extended or contracted.