公开(公告)号：US20120021579A1

公开(公告)日：2012-01-26

申请号：US13246454

申请日：2011-09-27

申请人： Tetsuya HAYASHI ,  Hideaki Tanaka ,  Masakatsu Hoshi ,  Saichirou Kaneko

发明人： Tetsuya HAYASHI ,  Hideaki Tanaka ,  Masakatsu Hoshi ,  Saichirou Kaneko

IPC分类号： H01L21/336

CPC分类号： H01L29/66068 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/7828

摘要： An aspect of the present invention provides a semiconductor device that includes a first conductivity type semiconductor body, a source region in contact with the semiconductor body, whose bandgap is different from that of the semiconductor body, and which formed heterojunction with the semiconductor body, a gate insulating film in contact with a portion of junction between the source region and the semiconductor body, a gate electrode in contact with the gate insulating film, a source electrode, a low resistance region in contact with the source electrode and the source region, and connected ohmically with the source electrode, and a drain electrode connected ohmically with the semiconductor body.

摘要翻译： 本发明的一个方面提供了一种半导体器件，其包括第一导电型半导体本体，与半导体本体接触的源极区域，其带隙与半导体本体的带隙不同，并且与半导体本体形成异质结， 与栅极绝缘膜接触的栅电极，源电极，与源极电极和源极区域接触的低电阻区域，以及 与源电极欧姆连接，以及与半导体主体欧姆连接的漏电极。

公开(公告)号：US20110117699A1

公开(公告)日：2011-05-19

申请号：US13014190

申请日：2011-01-26

申请人： Tetsuya HAYASHI ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

发明人： Tetsuya HAYASHI ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

IPC分类号： H01L21/336 ,  H01L21/04

CPC分类号： H01L29/7828 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/66068

摘要： A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

摘要翻译： 制备由半导体材料制成的半导体衬底，并且在半导体衬底上形成异质半导体区域，以在异质半导体区域和半导体衬底之间的界面中形成异质结。 异质半导体区域由具有与半导体材料的带隙不同的带隙的半导体材料制成，并且异质半导体区域的一部分包括膜厚度比其他部分薄的膜厚控制部分。 通过以等于膜厚控制部分的膜厚的厚度氧化杂半导体区域，形成与异质结相邻的栅极绝缘膜。 在栅极绝缘膜上形成栅电极。 这使得可以制造包括具有较低导通电阻的栅极绝缘膜以及更高的绝缘特性和可靠性的半导体器件。

公开(公告)号：US20080009089A1

公开(公告)日：2008-01-10

申请号：US11773649

申请日：2007-07-05

申请人： Tetsuya HAYASHI ,  Masakatsu HOSHI ,  Yoshio SHIMOIDA ,  Hideaki TANAKA ,  Shigeharu YAMAGAMI

发明人： Tetsuya HAYASHI ,  Masakatsu HOSHI ,  Yoshio SHIMOIDA ,  Hideaki TANAKA ,  Shigeharu YAMAGAMI

IPC分类号： H01L21/00

CPC分类号： H01L29/7828 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/66068

摘要： A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

摘要翻译： 制备由半导体材料制成的半导体衬底，并且在半导体衬底上形成异质半导体区域，以在异质半导体区域和半导体衬底之间的界面中形成异质结。 异质半导体区域由具有与半导体材料的带隙不同的带隙的半导体材料制成，并且异质半导体区域的一部分包括膜厚度比其他部分薄的膜厚控制部分。 通过以等于膜厚控制部分的膜厚的厚度氧化杂半导体区域，形成与异质结相邻的栅极绝缘膜。 在栅极绝缘膜上形成栅电极。 这使得可以制造包括具有较低导通电阻的栅极绝缘膜以及更高的绝缘特性和可靠性的半导体器件。

公开(公告)号：US20100046794A1

公开(公告)日：2010-02-25

申请号：US12607686

申请日：2009-10-28

申请人： Tetsuya HAYASHI ,  Masato FUJIKAWA ,  Kazutaka TERAMOTO

发明人： Tetsuya HAYASHI ,  Masato FUJIKAWA ,  Kazutaka TERAMOTO

IPC分类号： G06K9/00

CPC分类号： G01B11/0625 ,  G01B11/0683

摘要： There is provided a film measuring device capable of accurately and easily measuring the thickness of a microporous film formed on a battery electrode plate over the entire area of the film. A color CCD sensor 8 shoots the microporous film. A video board 11 converts a color tone of a color image signal obtained by the image pickup into gradation data of respective color components of RGB. After the data conversion, an image processing board 12 extracts line images of the respective color components. A calculator 14 obtains the thickness of the microporous film by referring to pre-measured film thickness reference values corresponding to the gradation data of the green or blue color component, which are stored in a table storage 13 as reference thickness table data, using the gradation data of the line image of the green color component or the blue color component as lookup data.

摘要翻译： 提供一种能够准确且容易地测量在膜的整个区域上形成在电池电极板上的微孔膜的厚度的膜测量装置。 彩色CCD传感器8拍摄微孔膜。 视频板11将通过图像拾取获得的彩色图像信号的色调转换为RGB的各个颜色分量的灰度数据。 在数据转换之后，图像处理板12提取各个颜色分量的线图像。 计算器14通过参照存储在表存储器13中的绿色或蓝色分量的灰度数据对应的预测膜厚基准值作为基准厚度表数据，使用灰度等级来获得微孔膜的厚度 绿色分量或蓝色分量的线图像的数据作为查找数据。

公开(公告)号：US20130248803A1

公开(公告)日：2013-09-26

申请号：US13601200

申请日：2012-08-31

申请人： Kiyohito NISHIHARA ,  Tetsuya HAYASHI

发明人： Kiyohito NISHIHARA ,  Tetsuya HAYASHI

IPC分类号： H01L45/00

CPC分类号： H01L45/142 ,  G11C13/0014 ,  G11C13/0016 ,  G11C2213/71 ,  G11C2213/79 ,  H01L45/1608 ,  H01L51/0591

摘要： According to one embodiment, a molecular memory includes a first electrode, a second electrode, and a resistance-change molecular chain provided between the first electrode and the second electrode. The first electrode includes a core made of a first conductive material, and a side wall made of a second conductive material different from the first conductive material. The side wall is formed on a side surface of the core. The second electrode is made of a third conductive material different from the first conductive material. The resistance-change molecular chain is bonded to the first conductive material.

摘要翻译： 根据一个实施例，分子存储器包括设置在第一电极和第二电极之间的第一电极，第二电极和电阻变化分子链。 第一电极包括由第一导电材料制成的芯和由与第一导电材料不同的第二导电材料制成的侧壁。 侧壁形成在芯的侧表面上。 第二电极由不同于第一导电材料的第三导电材料制成。 电阻变化分子链与第一导电材料结合。

公开(公告)号：US20100237906A1

公开(公告)日：2010-09-23

申请号：US12696335

申请日：2010-01-29

申请人： Tetsuya HAYASHI ,  Daisuke Suzuki

发明人： Tetsuya HAYASHI ,  Daisuke Suzuki

IPC分类号： H03K5/24

CPC分类号： H04L25/0272 ,  H04L25/0292

摘要： A receiving circuit includes an impedance compensating circuit, a first input terminal and a second input terminal coupled to a first signal line and a second signal line, a first signal and a second signal corresponding to differential signals being transmitted at the first input terminal and the second input terminal, respectively, a signal input circuit, coupled to the first input terminal and the second input terminal, which receives the first signal and the second signal are input, and a differential-signal detector that detects whether or not the differential signals are supplied to the first input terminal and the second input terminal.

摘要翻译： 接收电路包括阻抗补偿电路，耦合到第一信号线和第二信号线的第一输入端和第二输入端，对应于在第一输入端发送的差分信号的第一信号和第二信号， 分别输入接收第一信号和第二信号的耦合到第一输入端和第二输入端的信号输入电路，差分信号检测器检测差分信号是否为 提供给第一输入端子和第二输入端子。

公开(公告)号：US20100154704A1

公开(公告)日：2010-06-24

申请号：US12539152

申请日：2009-08-11

申请人： Yusuke FUKUMOTO ,  Tsumoru OHATA ,  Tetsuya HAYASHI

发明人： Yusuke FUKUMOTO ,  Tsumoru OHATA ,  Tetsuya HAYASHI

IPC分类号： B05C1/02 ,  B05C11/04 ,  B05C11/11

CPC分类号： H01M4/364 ,  B05C1/0826 ,  H01M4/0404 ,  H01M4/0414 ,  H01M4/131 ,  H01M4/133 ,  H01M4/139 ,  H01M4/1391 ,  H01M4/366 ,  H01M4/525 ,  H01M4/621 ,  H01M10/0525 ,  H01M10/058 ,  H01M10/0587 ,  H01M2300/004 ,  Y10T29/49108 ,  Y10T29/49115

摘要： A method for producing lithium ion secondary batteries includes the steps of: (A) preparing an electrode sheet with lead-forming parts, (B) intermittently forming porous insulating layers containing an inorganic oxide filler and a binder on a surface of the electrode sheet excluding the lead-forming parts, (C) connecting a lead to each of the lead-forming parts, and (D) fabricating batteries by using the electrode sheet to which the leads are connected. The step B includes: the step of applying a slurry containing the inorganic oxide filler and the binder to the outer surface of a gravure roll, and transferring the slurry applied to the outer surface of the gravure roll on a surface of the electrode sheet that is being transported by a plurality of guide rolls excluding the lead-forming part; and the step of moving at least one selected from the gravure roll and the guide rolls to make the electrode sheet away from the gravure roll in the lead-forming part.

摘要翻译： 一种锂离子二次电池的制造方法包括以下步骤：（A）制备具有铅成形部分的电极片，（B）在电极片的表面上间断地形成含有无机氧化物填料和粘合剂的多孔绝缘层， 引线形成部分，（C）将引线连接到每个引线形成部分，以及（D）通过使用引线连接的电极片来制造电池。 步骤B包括：将含有无机氧化物填料和粘合剂的浆料涂布到凹版辊的外表面，并将施加到凹版辊外表面上的浆料转印到电极片的表面上的步骤 通过除了铅成形部分之外的多个导辊传送; 以及移动从凹版辊和引导辊中选择的至少一种的步骤，以使电极片远离引线形成部分中的凹版辊。

公开(公告)号：US20100079571A1

公开(公告)日：2010-04-01

申请号：US12519611

申请日：2006-12-21

申请人： Tetsuya HAYASHI

发明人： Tetsuya HAYASHI

IPC分类号： B41J2/47

CPC分类号： G11B23/40 ,  G11B7/24038

摘要： A drawing device includes a drawing element irradiating laser light to a label surface of a recording medium according to drawing data of tracks to compose a desired pattern and draw it on the label surface. The drawing device further includes a juncture specifying element that specifies a juncture portion between drawing start and end positions according to the drawing data and a non-drawing portion specifying element that specifies a non-drawing portion corresponding to the drawing data not to direct the irradiation of the laser light in accordance with the drawing data. The drawing device includes a control element controlling the drawing element to carry out movement processing so the drawing start position in each of a plurality of the tracks moves relative to the desired pattern to be drawn in order for at least a part of the specified juncture portion to be received in the specified non-drawing portion.

摘要翻译： 绘图装置包括根据轨迹的绘制数据将激光照射到记录介质的标签表面上的绘图元件，以组成所需的图案并将其画在标签表面上。 绘图装置还包括根据绘图数据指定绘制开始和结束位置之间的接合部分的接合指定元件和指定与不引导照射的绘图数据相对应的非绘制部分的非绘图部分指定元素 的激光根据图纸数据。 绘图装置包括控制绘图元件以执行移动处理的控制元件，使得多个轨道中的每一个中的绘图开始位置相对于要绘制的期望图案移动，以便至少指定接合部分的一部分 在指定的非绘图部分中被接收。

公开(公告)号：US20130094819A1

公开(公告)日：2013-04-18

申请号：US13609568

申请日：2012-09-11

申请人： Tatsuya KONISHI ,  Tetsuya NAKANISHI ,  Tetsuya HAYASHI

发明人： Tatsuya KONISHI ,  Tetsuya NAKANISHI ,  Tetsuya HAYASHI

IPC分类号： G02B6/028 ,  G02B6/255

CPC分类号： G02B6/0285 ,  G02B6/03627 ,  G02B6/0365 ,  G02B6/14 ,  G02B6/255 ,  G02B6/26

摘要： There is provided an optical transmission line that includes a bend insensitive fiber (BIF) defined by ITU-T Recommendation G.657 and that reduces the influence of MPI. An optical transmission line 1 includes a first optical fiber 11, a second optical fiber 12 joined to an incident end of the first optical fiber 11, and a third optical fiber 13 joined to an exit end of the first optical fiber 11. The first optical fiber 11 is a bend insensitive fiber (BIF), and each of the second optical fiber 12 and the third optical fiber 13 is a general single mode optical fiber. An attenuation coefficient of an LP11 mode in the first optical fiber 11 at a wavelength of 1310 nm, a splice loss between the first optical fiber and the second optical fiber, a splice loss between the first optical fiber and the third optical fiber, and a length of the first optical fiber satisfy a predetermined relational equation.

摘要翻译： 提供了一种光传输线，其包括由ITU-T G.657建议书定义的弯曲不敏感光纤（BIF），并减少MPI的影响。 光传输线1包括第一光纤11，连接到第一光纤11的入射端的第二光纤12和与第一光纤11的出口端连接的第三光纤13.第一光 光纤11是弯曲不敏感光纤（BIF），第二光纤12和第三光纤13都是一般的单模光纤。 第一光纤11中的波长1310nm处的LP11模式的衰减系数，第一光纤与第二光纤之间的接合损耗，第一光纤与第三光纤之间的接合损耗，以及 第一光纤的长度满足预定的关系式。

公开(公告)号：US20120250008A1

公开(公告)日：2012-10-04

申请号：US13401992

申请日：2012-02-22

申请人： Tetsuya HAYASHI

发明人： Tetsuya HAYASHI

IPC分类号： G01N21/59

CPC分类号： G01M11/335 ,  G02B6/02042 ,  H04B3/487 ,  H04B10/0731

摘要： The present invention obtains a statistical distribution of inter-core crosstalk by measuring the inter-core crosstalk of a multi-core optical fiber while changing the wavelength of incident light in a predetermined range including a specific wavelength relative to the multi-core optical fiber, or while changing a polarization state of incident light entering the multi-core optical fiber. According to the present invention, there is no need to measure the crosstalk by rewinding the multi-core optical fiber and changing the phase difference between cores around the zero point of the equivalent propagation constant difference between cores.

摘要翻译： 本发明通过在将包括特定波长的预定范围内的入射光的波长相对于多芯光纤改变的同时测量多芯光纤的芯间串扰来获得核心间串扰的统计分布， 或者同时改变入射到多芯光纤的入射光的偏振状态。 根据本发明，不需要通过重绕多芯光纤并且改变在芯之间的等效传播常数差的零点附近的芯之间的相位差来测量串扰。