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公开(公告)号：US08659352B2
公开(公告)日：2014-02-25
申请号：US13601038
申请日：2012-08-31
CPC分类号： H03F1/0261 , H03F1/0277 , H03F3/211 , H03F3/602 , H03F3/72 , H03F2200/18 , H03F2203/7231 , H03F2203/7236
摘要： A power amplifier includes: a first amplifying element amplifying an input signal; a second amplifying element amplifying an output signal of the first amplifying element; a third amplifying element amplifying the input signal; a first switch connected between an output of the first amplifying element and an input of second amplifying element; a second switch connected between an output of the first amplifying element and an output of the third amplifying element; a third switch connected between an output of the first amplifying element and an output of the second amplifying element; a reference voltage generating a circuit generating reference voltage; a bias circuit supplying a bias current, based on the reference voltage, to inputs of the first, second, and third amplifying elements; and a control circuit controlling the first, second and third switches and the reference voltage generating circuit.
摘要翻译： 功率放大器包括：放大输入信号的第一放大元件; 放大第一放大元件的输出信号的第二放大元件; 放大所述输入信号的第三放大元件; 第一开关，连接在第一放大元件的输出端和第二放大元件的输入端之间; 第二开关，连接在第一放大元件的输出端和第三放大元件的输出端之间; 连接在第一放大元件的输出端和第二放大元件的输出端之间的第三开关; 产生电路产生参考电压的参考电压; 偏置电路，基于所述参考电压向所述第一，第二和第三放大元件的输入端提供偏置电流; 以及控制电路，控制第一，第二和第三开关和参考电压产生电路。
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公开(公告)号：US07397318B2
公开(公告)日：2008-07-08
申请号：US11563757
申请日：2006-11-28
申请人： Takayuki Matsuzuka
发明人： Takayuki Matsuzuka
CPC分类号： H03L1/023 , H03B5/04 , H03B5/1841
摘要： A voltage-controlled oscillator including a voltage-controlled oscillation section, a frequency control bias circuit, a temperature compensation bias circuit, and a temperature compensation bias generation circuit. The temperature compensation bias generation circuit has a transistor having its collector or drain connected to the temperature compensation bias circuit, a first resistor having one end connected to the collector or drain of the transistor and having another end that is grounded, a second resistor having one end connected to the base or gate of the transistor, a base or gate bias application terminal connected to another end of the second resistor, a third resistor having one end connected to the emitter or source of the transistor, and an emitter or source bias application terminal connected to another end of the third resistor.
摘要翻译： 包括压控振荡部分，频率控制偏置电路，温度补偿偏置电路和温度补偿偏置产生电路的压控振荡器。 温度补偿偏置产生电路具有其集电极或漏极连接到温度补偿偏置电路的晶体管，第一电阻器的一端连接到晶体管的集电极或漏极，另一端接地，第二电阻器具有一个 连接到晶体管的基极或栅极，连接到第二电阻器的另一端的基极或栅极施加端子，具有连接到晶体管的发射极或源极的一端的第三电阻器，以及发射极或源偏压应用 端子连接到第三电阻器的另一端。
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公开(公告)号：US08917144B2
公开(公告)日：2014-12-23
申请号：US13832999
申请日：2013-03-15
CPC分类号： H03F3/21 , H03F1/0261 , H03F3/245 , H03F3/60 , H03F2200/18 , H03F2200/411
摘要： A power amplifier includes: an amplification element amplifying an input signal; and a bias circuit supplying a bias current to an input of the amplification element. The bias circuit includes a reference voltage terminal to which a battery voltage is applied from a battery, a first resistor having a first end connected to the reference voltage terminal, a second resistor connected between a second end of the first resistor and ground, and a first transistor. The first transistor has a control terminal connected to a connection point between the first resistor and the second resistor, a first terminal connected to a power supply, and a second terminal connected to the input of the amplification element. The first and second resistors are the same material.
摘要翻译： 功率放大器包括：放大输入信号的放大元件; 以及向放大元件的输入端提供偏置电流的偏置电路。 偏置电路包括从电池施加电池电压的参考电压端子，具有连接到参考电压端子的第一端的第一电阻器，连接在第一电阻器的第二端和地之间的第二电阻器和 第一晶体管。 第一晶体管具有连接到第一电阻器和第二电阻器之间的连接点的控制端子，连接到电源的第一端子和连接到放大元件的输入端的第二端子。 第一和第二电阻是相同的材料。
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公开(公告)号：US08686795B2
公开(公告)日：2014-04-01
申请号：US13611844
申请日：2012-09-12
IPC分类号： H03F3/04
CPC分类号： H03F1/0261 , H03F1/302 , H03F1/56 , H03F3/602 , H03F2200/18 , H03F2200/411
摘要： A power amplifier includes: an amplifier having a base into which input signals are input, a collector to which a collector voltage is supplied, and an emitter; and a bias circuit for supplying a bias current to the base of the amplifier. The bias circuit includes a first transistor having a first control terminal into which a reference voltage is input, a first terminal to which a power voltage is applied, and a second terminal connected to the base of the amplifier. A capacitance adjusting circuit elevates capacitance between a grounding point and at least one of the first control terminal and the first terminal when the collector voltage of the amplifier is lowered.
摘要翻译： 功率放大器包括：具有输入信号的基极的放大器，提供集电极电压的集电极和发射极; 以及用于向放大器的基极提供偏置电流的偏置电路。 偏置电路包括具有输入基准电压的第一控制端子的第一晶体管，施加电源电压的第一端子和连接到放大器的基极的第二端子。 当放大器的集电极电压降低时，电容调整电路提高接地点与第一控制端子和第一端子中的至少一个之间的电容。
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公开(公告)号：US20070040226A1
公开(公告)日：2007-02-22
申请号：US11446201
申请日：2006-06-05
IPC分类号： H01L29/76
CPC分类号： H03F1/223 , H01L27/0222 , H01L27/0629 , H03F3/195 , H03F2200/451 , H03F2200/75
摘要： A cascode circuit in which two field effect transistors “FET”) are connected in cascode has a first FET having its source grounded, a second FET having its source connected to the drain of the first FET, and a Schottky barrier diode having an anode connected to the source of the first FET and a cathode connected to the gate of the second FET.
摘要翻译： 其中两个场效应晶体管“FET”）串联连接的共源共栅电路具有其源极接地的第一FET，其源极连接到第一FET的漏极的第二FET和具有阳极连接的肖特基势垒二极管 到第一FET的源极和连接到第二FET的栅极的阴极。
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公开(公告)号：US20130241659A1
公开(公告)日：2013-09-19
申请号：US13601038
申请日：2012-08-31
IPC分类号： H03F3/21
CPC分类号： H03F1/0261 , H03F1/0277 , H03F3/211 , H03F3/602 , H03F3/72 , H03F2200/18 , H03F2203/7231 , H03F2203/7236
摘要： A power amplifier includes: a first amplifying element amplifying an input signal; a second amplifying element amplifying an output signal of the first amplifying element; a third amplifying element amplifying the input signal; a first switch connected between an output of the first amplifying element and an input of second amplifying element; a second switch connected between an output of the first amplifying element and an output of the third amplifying element; a third switch connected between an output of the first amplifying element and an output of the second amplifying element; a reference voltage generating a circuit generating reference voltage; a bias circuit supplying a bias current, based on the reference voltage, to inputs of the first, second, and third amplifying elements; and a control circuit controlling the first, second and third switches and the reference voltage generating circuit.
摘要翻译： 功率放大器包括：放大输入信号的第一放大元件; 放大第一放大元件的输出信号的第二放大元件; 放大所述输入信号的第三放大元件; 第一开关，连接在第一放大元件的输出端和第二放大元件的输入端之间; 第二开关，连接在第一放大元件的输出端和第三放大元件的输出端之间; 连接在第一放大元件的输出端和第二放大元件的输出端之间的第三开关; 产生电路产生参考电压的参考电压; 偏置电路，基于所述参考电压向所述第一，第二和第三放大元件的输入端提供偏置电流; 以及控制电路，控制第一，第二和第三开关和参考电压产生电路。
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27.发明申请公开(公告)号：US20060006418A1
公开(公告)日：2006-01-12
申请号：US11175378
申请日：2005-07-07
IPC分类号： H01L29/739
CPC分类号： H01L27/0658 , H01L27/0808 , H01L29/93 , H03B5/1203 , H03B5/1231 , H03B5/1243 , H03B5/1296
摘要： A semiconductor device having an improved voltage control oscillator circuit is provided. The voltage control oscillator circuit includes, in combination, a variable-capacitance element and at least one bipolar transistor on a single semiconductor substrate. The variable-capacitance element includes reversely serially connected PN junctions, and junctions are formed by a single common collector layer and separated base layers on the common collector layer. The capacitance of the variable-capacitance element is generated between respective base layers of the PN junctions with the common collector layer, and varies in correspondence with the voltage applied to the common collector layer.
摘要翻译： 提供一种具有改进的压控振荡器电路的半导体器件。 电压控制振荡器电路组合地包括单个半导体衬底上的可变电容元件和至少一个双极晶体管。 可变电容元件包括反向串联连接的PN结，并且通过单个公共集电极层和公共集电极层上的分离的基极层形成结。 可变电容元件的电容在与公共集电极层的PN结的各个基极层之间产生，并且与施加到公共集电极层的电压相对应地变化。
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公开(公告)号：US06535090B1
公开(公告)日：2003-03-18
申请号：US09714287
申请日：2000-11-17
申请人： Takayuki Matsuzuka , Takayuki Katoh
发明人： Takayuki Matsuzuka , Takayuki Katoh
IPC分类号： H01P308
CPC分类号： H01P5/187 , H01L2224/48091 , H01L2224/48227 , H01L2924/1423 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： A compact high-frequency circuit device including a signal distribution circuit and a signal combining circuit. The high-frequency circuit device has a multilayer circuit, and the multilayer circuit includes a first conductor for transmitting a signal; a first dielectric layer in which the first conductor is embedded; a first ground conductor layer on one surface of the first dielectric layer and having a first opening; a second ground conductor layer on the other surface of the first dielectric layer and having another first opening, the first openings of the first and second ground conductor layers being mutually opposed; second dielectric layers, one being provided on the surface of the first ground conductor layer, and the other on the surface of the second ground conductors layer; and a pair of second conductors for transferring a signal, one being provided on the surface of one of the dielectric layers and the other on the surface of the other second dielectric layer, portions of the second conductors being mutually opposed at the first openings.
摘要翻译： 一种紧凑型高频电路装置，包括信号分配电路和信号组合电路。 高频电路器件具有多层电路，多层电路包括用于发送信号的第一导体; 第一电介质层，其中第一导体被嵌入其中; 第一接地导体层，在第一电介质层的一个表面上并具有第一开口; 在第一介电层的另一个表面上的第二接地导体层，并具有另一个第一开口，第一和第二接地导体层的第一开口相互相对; 第二电介质层，一个设置在第一接地导体层的表面上，另一个设置在第二接地导体层的表面上; 以及用于传送信号的一对第二导体，一个设置在一个电介质层的表面上，另一个设置在另一个第二介电层的表面上，第二导体的部分在第一开口处相互对置。
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公开(公告)号：US20140070890A1
公开(公告)日：2014-03-13
申请号：US13832999
申请日：2013-03-15
IPC分类号： H03F3/21
CPC分类号： H03F3/21 , H03F1/0261 , H03F3/245 , H03F3/60 , H03F2200/18 , H03F2200/411
摘要： A power amplifier includes: an amplification element amplifying an input signal; and a bias circuit supplying a bias current to an input of the amplification element. The bias circuit includes a reference voltage terminal to which a battery voltage is applied from a battery, a first resistor having a first end connected to the reference voltage terminal, a second resistor connected between a second end of the first resistor and ground, and a first transistor. The first transistor has a control terminal connected to a connection point between the first resistor and the second resistor, a first terminal connected to a power supply, and a second terminal connected to the input of the amplification element. The first and second resistors are the same material.
摘要翻译： 功率放大器包括：放大输入信号的放大元件; 以及向放大元件的输入端提供偏置电流的偏置电路。 偏置电路包括从电池施加电池电压的参考电压端子，具有连接到参考电压端子的第一端的第一电阻器，连接在第一电阻器的第二端和地之间的第二电阻器和 第一晶体管。 第一晶体管具有连接到第一电阻器和第二电阻器之间的连接点的控制端子，连接到电源的第一端子和连接到放大元件的输入端的第二端子。 第一和第二电阻是相同的材料。
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公开(公告)号：US07342453B2
公开(公告)日：2008-03-11
申请号：US11446201
申请日：2006-06-05
CPC分类号： H03F1/223 , H01L27/0222 , H01L27/0629 , H03F3/195 , H03F2200/451 , H03F2200/75
摘要： A cascode circuit in which two field effect transistors (“FET”) are connected in cascode has a first FET having its source grounded, a second FET having its source connected to the drain of the first FET, and a Schottky barrier diode having an anode connected to the source of the first FET and a cathode connected to the gate of the second FET.
摘要翻译： 其中两个场效应晶体管（“FET”）以共源共栅连接的共源共栅电路具有其源极接地的第一FET，其源极连接到第一FET的漏极的第二FET和具有阳极的肖特基势垒二极管 连接到第一FET的源极和连接到第二FET的栅极的阴极。
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