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    Magnetoresistive element including layered film touching periphery of spacer layer
    22.
    发明授权
    Magnetoresistive element including layered film touching periphery of spacer layer 有权
    磁阻元件包括层间膜接触间隔层的周边

    公开(公告)号：US07944650B2

    公开(公告)日：2011-05-17

    申请号：US11898335

    申请日：2007-09-11

    申请人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    发明人： Yoshihiro Tsuchiya ,  Koji Shimazawa ,  Tomohito Mizuno ,  Shinji Hara ,  Daisuke Miyauchi ,  Takahiko Machita

    IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： An MR element includes an MR stack including a first ferromagnetic layer, a second ferromagnetic layer, and a spacer layer disposed between the first and the second ferromagnetic layer. The MR stack has an outer surface, and the spacer layer has a periphery located in the outer surface of the MR stack. The magnetoresistive element further includes a layered film that touches the periphery of the spacer layer. The spacer layer includes a semiconductor layer formed using an oxide semiconductor as a material. The layered film includes a first layer, a second layer, and a third layer stacked in this order. The first layer is formed of the same material as the semiconductor layer, and touches the periphery of the spacer layer. The second layer is a metal layer that forms a Schottky barrier at the interface between the first layer and the second layer. The third layer is an insulating layer.

    摘要翻译： MR元件包括包括第一铁磁层，第二铁磁层和设置在第一和第二铁磁层之间的间隔层的MR堆叠。 MR堆叠具有外表面，并且间隔层具有位于MR堆叠的外表面中的周边。 磁阻元件还包括接触间隔层的周边的层状膜。 间隔层包括使用氧化物半导体作为材料形成的半导体层。 层叠膜包括依次堆叠的第一层，第二层和第三层。 第一层由与半导体层相同的材料形成，并且与间隔层的周边接触。 第二层是在第一层和第二层之间的界面处形成肖特基势垒的金属层。 第三层是绝缘层。

    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM
    25.
    发明申请
    MAGNETO-RESISTIVE EFFECT DEVICE OF THE CPP TYPE, AND MAGNETIC DISK SYSTEM 有权
    CPP类型和磁盘系统的磁阻效应器件

    公开(公告)号：US20090190270A1

    公开(公告)日：2009-07-30

    申请号：US12022538

    申请日：2008-01-30

    申请人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    发明人： Tsutomu Chou ,  Yoshihiro Tsuchiya ,  Daisuke Miyauchi ,  Takahiko Machita ,  Shinji Hara ,  Tomohito Mizuno ,  Hironobu Matsuzawa ,  Toshiyuki Ayukawa ,  Koji Shimazawa ,  Kiyoshi Noguchi

    IPC分类号： G11B5/33

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3916 ,  G11B5/3932 ,  G11B5/3967

    摘要： The invention provides a magnetoresistive device with the CPP (current perpendicular to plane) structure, comprising a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked and formed with said nonmagnetic intermediate layer interposed between them, with a sense current applied in the stacking direction, wherein each of said first and second ferromagnetic layers comprises a sensor area joining to the nonmagnetic intermediate layer near a medium opposite plane and a magnetization direction control area that extends further rearward (toward the depth side) from the position of the rear end of said nonmagnetic intermediate layer; a magnetization direction control multilayer arrangement is interposed at an area where the magnetization direction control area for said first ferromagnetic layer is opposite to the magnetization direction control area for said second ferromagnetic layer in such a way that the magnetizations of the said first and second ferromagnetic layers are antiparallel with each other along the width direction axis; and said sensor area is provided at both width direction ends with biasing layers working such that the mutually antiparallel magnetizations of said first and second ferromagnetic layers intersect in substantially orthogonal directions. It is thus possible to obtain a magnetoresistive device that, while the magnetization directions of two magnetic layers (free layers) stay stabilized, can have high reliability, and can improve linear recording densities by the adoption of a structure capable of narrowing the read gap (the gap between the upper and lower shields) thereby meeting recent demands for ultra-high recording densities.

    摘要翻译： 本发明提供了一种具有CPP（电流垂直于平面）结构的磁阻器件，包括非磁性中间层，并且第一铁磁层和第二铁磁层层叠并形成有介于它们之间的所述非磁性中间层，施加感应电流 其特征在于，所述第一和第二铁磁体层中的每一个包括与介质相对平面附近的非磁性中间层连接的传感器区域和从所述第一和第二铁磁层的位置向后延伸（朝向深度侧）的磁化方向控制区域 所述非磁性中间层的后端; 磁化方向控制多层布置被插入在所述第一铁磁层的磁化方向控制区域与所述第二铁磁层的磁化方向控制区域相反的区域处，使得所述第一和第二铁磁层的磁化 沿着宽度方向轴线彼此反平行; 并且所述传感器区域设置在两个宽度方向端，偏压层工作，使得所述第一和第二铁磁层的相互反平行磁化在大致正交的方向相交。 因此，可以获得在两个磁性层（自由层）的磁化方向保持稳定的同时可以具有高可靠性的磁阻器件，并且可以通过采用能够缩小读取间隙的结构来提高线性记录密度（ 上，下屏蔽之间的间隙），从而满足了对超高记录密度的最新要求。

    FABRICATION PROCESS FOR MAGNETO-RESISTIVE EFFECT DEVICES OF THE CPP STRUCTURE
    26.
    发明申请
    FABRICATION PROCESS FOR MAGNETO-RESISTIVE EFFECT DEVICES OF THE CPP STRUCTURE 失效
    CPP结构磁阻效应器件的制造工艺

    公开(公告)号：US20080052896A1

    公开(公告)日：2008-03-06

    申请号：US11757174

    申请日：2007-06-01

    申请人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Koji Shimazawa

    发明人： Yoshihiro TSUCHIYA ,  Tomohito Mizuno ,  Koji Shimazawa

    IPC分类号： G11B5/127

    CPC分类号： H01F41/183 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3268 ,  H01L43/12 ,  Y10T29/49021 ,  Y10T29/49034 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.

    摘要翻译： 自由层的功能使得磁化方向根据外部磁场而变化，并且由包括第一Heusler合金层的多层结构构成，并且固定磁化层采用其中内部销层和外部销层 彼此叠置，夹在它们之间的非磁性中间层。 内销层由包括第二Heusler合金层的多层结构构成。 第一和第二Heusler合金层各自通过共溅射技术形成，其使用分裂的目标分成至少两个子靶，以构成Heusler合金层组成。 因此，当形成Heusler合金层时，可以提高膜沉积速率，提高生产率并提高器件的性能。

    Magneto-resistance effect element having Heusler alloy compounds adjacent to spacer layer
    27.
    发明申请
    Magneto-resistance effect element having Heusler alloy compounds adjacent to spacer layer 审中-公开
    具有与间隔层相邻的Heusler合金化合物的磁阻效应元件

    公开(公告)号：US20070121255A1

    公开(公告)日：2007-05-31

    申请号：US11519921

    申请日：2006-09-13

    申请人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa ,  Daisuke Miyauchi

    发明人： Yoshihiro Tsuchiya ,  Tomohito Mizuno ,  Koji Shimazawa ,  Daisuke Miyauchi

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/1936 ,  H01F10/3272 ,  H01F41/303 ,  H01L43/10

    摘要： A magneto-resistance effect element according to the present invention comprises a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between said pinned layer and said free layer. At least either said pinned layer or said free layer includes a Heusler alloy layer that is disposed adjacent to said spacer layer, and compounds are arranged in a dotted pattern at an interface between said spacer layer and at least said spacer layer and said pinned layer or said spacer layer and said free layer, said compounds including material that is included in said Heusler alloy layer.

    摘要翻译： 根据本发明的磁阻效应元件包括其磁化方向固定的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在所述被钉扎层和所述自由层之间的非磁性间隔层。 所述被钉扎层或所述自由层中的至少一个包括邻近所述间隔层设置的Heusler合金层，并且化合物以虚线图案布置在所述间隔层和至少所述间隔层和所述钉扎层之间的界面处，或 所述间隔层和所述自由层，所述化合物包括包含在所述Heusler合金层中的材料。

    Magneto-resistance element and thin film magnetic head with improved heat reliability
    28.
    发明申请
    Magneto-resistance element and thin film magnetic head with improved heat reliability 有权
    磁阻元件和薄膜磁头，提高了热可靠性

    公开(公告)号：US20070058301A1

    公开(公告)日：2007-03-15

    申请号：US11519854

    申请日：2006-09-13

    申请人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

    发明人： Koji Shimazawa ,  Yoshihiro Tsuchiya ,  Tomohito Mizuno

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F1/408 ,  H01F10/1936 ,  H01F10/3272

    摘要： A magneto-resistance element according to the present invention has a pinned layer whose magnetization direction is fixed; a free layer whose magnetization direction varies in accordance with an external magnetic field; and a nonmagnetic spacer layer that is arranged between the pinned layer and the free layer, at least the pinned layer or the free layer includes a layer having Heusler alloy represented by composition formula X2YZ (where X is a precious metal element, Y is a transition metal of Mn, V, or Ti group, Z is an element from group III to group V), and a part of composition X is replaced with Co, and an atomic composition ratio of Co in composition X is from 0.5 to 0.85.

    摘要翻译： 根据本发明的磁阻元件具有固定磁化方向的钉扎层; 其磁化方向根据外部磁场而变化的自由层; 以及布置在被钉扎层和自由层之间的非磁性间隔层，至少被钉扎层或自由层包括由组成式X 2 Y Y（其中X为 贵金属元素，Y是Mn，V或Ti基的过渡金属，Z是III族至V族的元素），组成X的一部分被Co替代，Co的原子组成比 组合物X为0.5〜0.85。

    CPP-type magnetoresistance effect element having a pair of free layers
    30.
    发明授权
    CPP-type magnetoresistance effect element having a pair of free layers 有权
    CPP型磁阻效应元件具有一对自由层

    公开(公告)号：US08085512B2

    公开(公告)日：2011-12-27

    申请号：US12045927

    申请日：2008-03-11

    申请人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

    发明人： Tomohito Mizuno ,  Yoshihiro Tsuchiya ,  Shinji Hara ,  Koji Shimazawa ,  Tsutomu Chou

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B2005/3996

    摘要： A magnetic field detecting element comprises: a stack which includes first, second and third magnetic layers whose magnetization directions depend upon an external magnetic field, the second magnetic layer being positioned between the first magnetic layer and the third magnetic layer, a first non-magnetic intermediate layer sandwiched between the first magnetic layer and the second magnetic layer, and a second non-magnetic intermediate layer sandwiched between the second magnetic layer and the third magnetic layer, wherein the stack is adapted such that sense current flows in a direction that is perpendicular to a film surface thereof; and a bias magnetic layer which is provided on a side of the stack, the side being opposite to an air bearing surface of the stack.

    摘要翻译： 磁场检测元件包括：堆叠，其包括其磁化方向取决于外部磁场的第一，第二和第三磁性层，第二磁性层位于第一磁性层和第三磁性层之间，第一非磁性层 夹在第一磁性层和第二磁性层之间的中间层和夹在第二磁性层和第三磁性层之间的第二非磁性中间层，其中该堆叠适于使得感测电流沿垂直的方向流动 到其膜表面; 以及偏置磁性层，其设置在所述堆叠的一侧，所述侧面与所述堆叠的空气支承表面相对。