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37 条记录 (耗时 0.024 秒)

    SEMICONDUCTOR DEVICE
    25.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20140361333A1

    公开(公告)日：2014-12-11

    申请号：US14373992

    申请日：2013-01-23

    申请人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    发明人： Keisuke Kimura ,  Satoru Kameyama ,  Masaki Koyama ,  Sachiko Aoi

    IPC分类号： H01L27/06 ,  H01L29/739 ,  H01L29/06

    CPC分类号： H01L27/0664 ,  H01L29/0646 ,  H01L29/0834 ,  H01L29/407 ,  H01L29/7395 ,  H01L29/7397 ,  H01L29/861

    摘要： When a semiconductor substrate of a semiconductor device is viewed from above, an isolation region, an IGBT region, and a diode region are all formed adjacent to each other. A deep region that is connected to a body region and an anode region is formed in the isolation region. A drift region is formed extending across the isolation region, the IGBT region, and the diode region, inside the semiconductor substrate. A collector region that extends across the isolation region, the IGBT region and the diode region, and a cathode region positioned in the diode region, are formed in a region exposed on a lower surface of the semiconductor substrate. A boundary between the collector region and the cathode region is in the diode region, in a cross-section that cuts across a boundary between the isolation region and the diode region, and divides the isolation region and the diode region. The collector region formed in the isolation region has a higher dopant impurity concentration than the collector region in the IGBT region.

    摘要翻译： 当从上方观察半导体器件的半导体衬底时，隔离区域，IGBT区域和二极管区域都彼此相邻地形成。 在隔离区域中形成连接到体区和阳极区的深区。 在半导体衬底内部跨越隔离区域，IGBT区域和二极管区域形成漂移区域。 在半导体衬底的下表面上暴露的区域中形成有跨越隔离区域，IGBT区域和二极管区域以及位于二极管区域中的阴极区域的集电极区域。 在二极管区域中，集电极区域和阴极区域之间的边界处于跨越隔离区域和二极管区域之间的边界的横截面，并且分隔隔离区域和二极管区域。 形成在隔离区域的集电极区域的掺杂浓度比IGBT区域的集电极区域高。

    Image reading apparatus
    26.
    发明授权
    Image reading apparatus 有权

    公开(公告)号：US08817335B2

    公开(公告)日：2014-08-26

    申请号：US13369035

    申请日：2012-02-08

    申请人： Keisuke Kimura

    发明人： Keisuke Kimura

    IPC分类号： H04N1/04

    摘要： An image reading apparatus includes a main body, a rotation unit supported on the main body so as to be rotatable around a rotation axis, an imaging unit that is mounted on the rotation unit at an outward position in a radial direction of the rotation axis and images a medium to be read that is placed on a placement surface located under the rotation unit in the vertical direction, and a light source that irradiates the medium to be read with light. The light source and the imaging unit can be arranged with a relative positional relationship capable of suppressing specular reflected light of light that is emitted from the light source and reflected by the medium to be read from being incident on the imaging unit.

    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
    27.
    发明申请
    SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 有权
    半导体集成电路设备

    公开(公告)号：US20130249720A1

    公开(公告)日：2013-09-26

    申请号：US13744284

    申请日：2013-01-17

    申请人： Tatsuji Matsuura ,  Hideo Nakane ,  Masumi Kasahara ,  Ryuichi Ujiie ,  Keisuke Kimura ,  Oshima Takashi

    发明人： Tatsuji Matsuura ,  Hideo Nakane ,  Masumi Kasahara ,  Ryuichi Ujiie ,  Keisuke Kimura ,  Oshima Takashi

    IPC分类号： H03M1/06 ,  H03M1/10

    CPC分类号： H03M1/06 ,  H03M1/1038 ,  H03M1/1071 ,  H03M1/123

    摘要： A semiconductor integrated circuit device having A/D converters for converting, by means of digital correction processing, analog input signals into digital signals is reduced in area. The semiconductor integrated circuit device has a first A/D converter and a second A/D converter. In a first mode, a first test signal is inputted to both the first and second A/D converters, and a first correction coefficient for the first A/D converter and a second correction coefficient for the second A/D converter are calculated. In a second mode, the first A/D converter converts a first analog signal into a first digital signal by subjecting the first analog signal to a first digital correction processing and the second A/D converter converts a second analog signal into a second digital signal by subjecting the second analog signal to a second digital correction processing.

    摘要翻译： 具有用于通过数字校正处理将模拟输入信号转换成数字信号的A / D转换器的半导体集成电路器件面积减小。 半导体集成电路器件具有第一A / D转换器和第二A / D转换器。 在第一模式中，第一测试信号被输入到第一和第二A / D转换器，并且计算第一A / D转换器的第一校正系数和第二A / D转换器的第二校正系数。 在第二模式中，第一A / D转换器通过对第一模拟信号进行第一数字校正处理而将第一模拟信号转换为第一数字信号，并且第二A / D转换器将第二模拟信号转换为第二数字信号 通过对第二模拟信号进行第二数字校正处理。

    Image reading apparatus and image reading system
    28.
    发明授权
    Image reading apparatus and image reading system 有权
    图像读取装置和图像读取系统

    公开(公告)号：US08358451B2

    公开(公告)日：2013-01-22

    申请号：US12825397

    申请日：2010-06-29

    申请人： Keisuke Kimura

    发明人： Keisuke Kimura

    IPC分类号： H04N1/04

    CPC分类号： B65H29/58 ,  B65H2301/142 ,  B65H2403/51 ,  B65H2403/541 ,  B65H2404/153 ,  B65H2404/63 ,  B65H2511/414 ,  B65H2511/51 ,  B65H2511/515 ,  B65H2513/108 ,  B65H2515/32 ,  B65H2801/39 ,  G03G15/6529 ,  G03G15/6555 ,  H04N1/0057 ,  H04N1/00591 ,  H04N1/00602 ,  H04N1/00612 ,  H04N1/12 ,  H04N1/193 ,  H04N2201/0081 ,  B65H2220/02 ,  B65H2220/11 ,  B65H2220/01

    摘要： A conveying device, comprising: a linear conveyance route on which a sheet-like medium is linearly conveyable; a bent conveyance route that is branched from the linear conveyance route and on which the medium is conveyable in a bent manner; a switching member provided at the branched portion and movable into a bent conveyance position for guiding the medium to the bent conveyance route and into a linear conveyance position for guiding the medium to the linear conveyance route, according to a force acting from the medium at a time of coming in contact with the medium; and a variable pressurizing unit configured to make a force acting on the medium from the switching member in the linear conveyance position smaller than a force acting on the medium from the switching member in the bent conveyance position.

    摘要翻译： 一种输送装置，其特征在于，包括：线状输送路径，片状介质可线性输送; 弯曲的输送路径，其从线性输送路径分支并且介质可以弯曲方式输送; 切换构件，其设置在所述分支部并且可移动到弯曲输送位置，用于将所述介质引导到所述弯曲输送路径，并且根据在所述线性输送路径处的介质作用的力将所述介质引导到所述线性输送路径; 与媒体接触的时间; 以及可变加压单元，其构造成使得在直线运送位置中从切换构件作用在介质上的力小于在弯曲输送位置中从切换构件作用在介质上的力。