Refrigerating machine oil for carbon dioxide refrigerant
    21.
    发明授权
    Refrigerating machine oil for carbon dioxide refrigerant 有权
    二氧化碳制冷剂冷冻机油基础油和二氧化碳制冷剂制冷机油

    公开(公告)号:US07993543B2

    公开(公告)日:2011-08-09

    申请号:US12293846

    申请日:2007-03-20

    IPC分类号: C09K5/04

    摘要: The base oil for the refrigerating machine oil used with a carbon dioxide refrigerant of the invention is characterized by comprising a complete ester of a fatty acid in which the proportion of C14-C22 branched fatty acid is 40-100% by mole and a polyhydric alcohol. The refrigerating machine oil used with a carbon dioxide refrigerant according to the invention is characterized by comprising the base oil for the refrigerating machine oil used with a carbon dioxide refrigerant according to the invention. The base oil for the refrigerating machine oil used with a carbon dioxide refrigerant and the refrigerating machine oil used with a carbon dioxide refrigerant according to the invention, when used together with a carbon dioxide refrigerant, exhibit excellent stability and electrical insulating properties, and have suitable compatibility with refrigerants while allowing adequate lubricity to be exhibited without increasing the viscosity of the base oil.

    摘要翻译: 本发明的与二氧化碳制冷剂一起使用的制冷机油的基础油,其特征在于,含有脂肪酸的完全酯,其中C14-C22支链脂肪酸的比例为40〜100摩尔%,多元醇 。 与根据本发明的二氧化碳制冷剂一起使用的冷冻机油的特征在于包括用于根据本发明的二氧化碳制冷剂的冷冻机油的基础油。 与二氧化碳制冷剂一起使用的冷冻机油的基础油和本发明的与二氧化碳制冷剂一起使用的冷冻机油与二氧化碳制冷剂一起使用时,具有优异的稳定性和电绝缘性, 与制冷剂的相容性同时允许显示足够的润滑性而不增加基础油的粘度。

    Semiconductor device
    22.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号:US08786061B2

    公开(公告)日:2014-07-22

    申请号:US13439025

    申请日:2012-04-04

    申请人: Ken Sawada

    发明人: Ken Sawada

    摘要: A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate laminated with an insulating layer, a first transmission line formed on the first semiconductor substrate, the first transmission line including a signal line and a ground, a second transmission line formed on the second semiconductor substrate, the second transmission line including a signal line and a ground, a first via layer for the signal lines, the first via layer for the signal lines being formed of a conductor layer formed within a via hole, a first via layer for the grounds, the first via layer for the grounds being formed of a conductor layer formed within a via hole, and a second via layer for the grounds, the second via layer for the grounds being formed of a conductor layer formed within a via hole.

    摘要翻译: 半导体器件包括第一半导体衬底和层压有绝缘层的第二半导体衬底,形成在第一半导体衬底上的第一传输线,包括信号线和接地的第一传输线,形成在第二半导体衬底上的第二传输线 半导体衬底,第二传输线包括信号线和接地,用于信号线的第一通孔层,用于信号线的第一通孔层由形成在通孔内的导体层形成,第一通孔层用于 接地,用于由形成在通孔内的导体层形成的接地的第一通孔层和用于接地的第二通孔层,用于接地的第二通孔层由形成在通孔内的导体层形成。

    Resist pattern forming method and semiconductor device fabrication method
    23.
    发明授权
    Resist pattern forming method and semiconductor device fabrication method 有权
    抗蚀剂图案形成方法和半导体器件制造方法

    公开(公告)号:US07429446B2

    公开(公告)日:2008-09-30

    申请号:US10804179

    申请日:2004-03-19

    IPC分类号: G03F7/26

    CPC分类号: G03F7/40 G03F7/023

    摘要: A photoresist film 12 is formed on a substrate 10. In the photoresist film 12, an opening 13 having higher hydrophilicity and higher affinity with a chemical liquid 16 for swelling the photoresist film at upper part of the sidewall is formed down to the substrate 10. The chemical liquid 16 is reacted with the photoresist film 12 with the opening formed in to swell the photoresist film 16 to thereby reverse-taper the sidewall of the opening. Whereby the photoresist film having an opening diameter beyond a resolution of the photoresist material and the sidewall of the opening reverse-tapered can be easily formed.

    摘要翻译: 在基板10上形成光刻胶膜12。 在光致抗蚀剂膜12中,向衬底10形成与侧壁上部的光致抗蚀剂膜膨胀的化学液体16亲水性高,亲和性高的开口13。 化学液体16与光致抗蚀剂膜12反应,其中形成有开口以使光致抗蚀剂膜16膨胀,从而使开口的侧壁反向锥形化。 由此可以容易地形成具有超过光致抗蚀剂材料的分辨率的开口直径和反向锥形开口的侧壁的光致抗蚀剂膜。

    Semiconductor device
    24.
    发明申请

    公开(公告)号:US20060163610A1

    公开(公告)日:2006-07-27

    申请号:US11336333

    申请日:2006-01-20

    申请人: Ken Sawada

    发明人: Ken Sawada

    IPC分类号: H01L31/109

    摘要: A semiconductor device is provided. In one example, a semiconductor device has a D-HBT structure which include a base layer formed from InGaAs and an emitter layer and a collector layer both formed from InGaP in such a way as to hold said base layer between them, wherein said InGaAs has a composition such that the content of In is smaller than 53% and said InGaP has a composition such that the content of In is just enough to make the lattice constant of said emitter layer and collector layer equal to the lattice constant of said base layer. This semiconductor device realizes a large current gain while keeping the high-speed operation owing to the base layer of InGaAs having good carrier mobility. In addition, it can be formed on a large wafer as the substrate.

    Method of manufacturing fine T-shaped electrode
    25.
    发明申请
    Method of manufacturing fine T-shaped electrode 有权
    制造精细T型电极的方法

    公开(公告)号:US20050147923A1

    公开(公告)日:2005-07-07

    申请号:US11055097

    申请日:2005-02-11

    申请人: Ken Sawada

    发明人: Ken Sawada

    CPC分类号: H01L21/28587 H01L29/42316

    摘要: A method of manufacturing a fine T-shaped electrode includes a step of forming a laminated resist which includes at least a photoresist layer as an uppermost layer; a step of forming an uppermost layer opening by irradiating the laminated resist with light to pattern only the photo resist layer and form an uppermost layer opening; a step of reducing the diameter of the uppermost layer opening by coating a resist pattern thickening material on the photoresist layer; a step of forming a lowermost layer opening by transferring the uppermost layer opening formed in the photoresist layer to a lower layer of the photoresist, and penetrating the laminated resist; a step of reducing the size of the lowermost opening in the lowermost layer of the laminated resist; and a step of forming a T-shaped electrode in the opening part formed through the laminated resist.

    摘要翻译: 一种精细T型电极的制造方法包括形成至少包含光致抗蚀剂层作为最上层的层叠抗蚀剂的工序; 通过用光照射层叠的抗蚀剂来形成最上层开口的步骤,以仅图案地形成光致抗蚀剂层并形成最上层的开口; 通过在抗蚀剂层上涂布抗蚀剂图案增厚材料来减小最上层开口的直径的步骤; 通过将形成在光致抗蚀剂层中的最上层开口转移到光致抗蚀剂的下层并穿透层叠的抗蚀剂来形成最下层开口的步骤; 降低层叠抗蚀剂的最下层的最下面开口尺寸的步骤; 以及在通过层叠的抗蚀剂形成的开口部中形成T形电极的步骤。

    Method of processing resist, semiconductor device, and method of producing the same
    26.
    发明授权
    Method of processing resist, semiconductor device, and method of producing the same 有权
    抗蚀剂的加工方法,半导体装置及其制造方法

    公开(公告)号:US08410616B2

    公开(公告)日:2013-04-02

    申请号:US12659970

    申请日:2010-03-26

    摘要: A surface component film (2) is etched using a resist (3) as a mask, and the surface component film (2) is patterned according to the shape of an aperture (3a). This results in a step portion (4) having the same shape as the aperture (3a), with the sidewall (4a) of the step portion (4) exposed through the aperture (3a). The aperture (3a) is spin-coated with a shrink agent, reacted at a first temperature, and developed to shrink the aperture (3a). To control the shrinkage with high accuracy, in the first round of reaction, the aperture is shrunk by, for example, about half of the desired shrinkage. The aperture (3a) is further spin-coated with a shrink agent, reacted at a second temperature, and developed to shrink the aperture (3a). In this embodiment, the second-round shrink process will result in the desired aperture length. The second temperature is adjusted based on the shrinkage in the first round. With respect to a resist using short-wavelength light (short-wavelength resist) or a resist using electron beam (electron beam resist), a minute aperture can be obtained with stable shrink effect and accurate control of the length thereof.

    摘要翻译: 使用抗蚀剂(3)作为掩模蚀刻表面成分膜(2),根据孔(3a)的形状对表面成分膜(2)进行图案化。 这导致台阶部分(4)具有与孔(3a)相同的形状,台阶部分(4)的侧壁(4a)通过孔(3a)露出。 孔(3a)用收缩剂旋涂,在第一温度下反应并显影以收缩孔(3a)。 为了高精度地控制收缩,在第一轮反应中,孔径例如缩小了所需收缩的大约一半。 孔(3a)进一步用收缩剂进行旋涂,在第二温度下反应并显影以收缩孔(3a)。 在该实施例中,第二次收缩过程将导致期望的孔径长度。 第二个温度根据第一轮的收缩率进行调整。 对于使用短波长光(短波长抗蚀剂)的抗蚀剂或使用电子束(电子束抗蚀剂)的抗蚀剂,可以获得具有稳定的收缩效果和其长度的精确控制的微小孔径。

    Semiconductor device having a fin field effect transistor
    27.
    发明授权
    Semiconductor device having a fin field effect transistor 有权
    具有鳍场效应晶体管的半导体器件

    公开(公告)号:US07888751B2

    公开(公告)日:2011-02-15

    申请号:US12423287

    申请日:2009-04-14

    申请人: Ken Sawada

    发明人: Ken Sawada

    CPC分类号: H01L29/785 H01L29/66795

    摘要: A semiconductor device includes a fin field effect transistor configured to include at least a first fin and a second fin. Threshold voltage of the first fin and threshold voltage of the second fin are different from each other in the fin field effect transistor.

    摘要翻译: 半导体器件包括鳍状场效应晶体管,其被配置为至少包括第一鳍片和第二鳍片。 在鳍式场效应晶体管中,第一鳍的阈值电压和第二鳍的阈值电压彼此不同。

    Positioning and clamping apparatus
    28.
    发明授权
    Positioning and clamping apparatus 失效
    定位和夹紧装置

    公开(公告)号:US06439560B2

    公开(公告)日:2002-08-27

    申请号:US09783193

    申请日:2001-02-14

    IPC分类号: B23Q308

    CPC分类号: B23K37/0435 B25B5/087

    摘要: A clamp jig has a positioning pin provided at the tip of a cylindrical member, and a clamp arm is mounted in a slit formed in this positioning pin, so as to be able to swing and so as to be able to axially advance and retreat. A reciprocating shaft is connected to the clamp arm by a connecting pin, and a spring force is applied to this reciprocating shaft in a retreating direction by a compression coil spring. A plunger 35 brought into contact with the reciprocating shaft is mounted in a drive housing so as to be able to axially reciprocate, and a female screw member driven by a motor is thread-connected to a male screw member secured to this plunger. Accordingly, it is made possible to reliably perform positioning and clamping, of a member to be fixed, and unclamping thereof by a low-cost motor.

    摘要翻译: 夹具夹具具有设置在圆柱形构件的顶端的定位销,并且夹紧臂安装在形成在该定位销中的狭缝中,以便能够摆动并且能够轴向前进和后退。 往复轴通过连接销连接到夹紧臂上,弹簧力通过压缩螺旋弹簧沿回撤方向施加到该往复轴上。 与往复轴接触的柱塞35安装在驱动壳体中以能够轴向往复运动,并且由电动机驱动的阴螺纹构件螺纹连接到固定到该柱塞的外螺纹构件。 因此,能够可靠地进行要固定的构件的定位和夹紧,并且可以通过低成本的电动机使其松开。

    Language translator with keys for marking and recalling selected stored
words
    29.
    发明授权
    Language translator with keys for marking and recalling selected stored words 失效
    具有用于标记和调用所选存储字的键的语言翻译器

    公开(公告)号:US4636977A

    公开(公告)日:1987-01-13

    申请号:US573644

    申请日:1984-01-25

    IPC分类号: G06F17/27 G06F17/28 G06F15/38

    摘要: An electronic translator includes an input device for inputting an entry word, an output device responsive to the input of the entry word for outputting a word equivalent to the entry word, a mark device by which the entry word and the equivalent word are marked as being stored, and an announcement device responsive to the output device for announcing that all the marked words have been outputted. Preferably, the announcement device is adapted to display or provide an announcement sound to show the occurrence of such a condition.

    摘要翻译: 电子翻译器包括用于输入输入字的输入装置,响应于输入字输入与输入字相当的字的输出装置,输入字和等效词被标记为是的标记装置 存储,以及响应于输出设备的通知设备,用于通知所有标记的字已被输出。 优选地,通知装置适于显示或提供公告声音以显示这种情况的发生。