公开(公告)号：US06743691B2

公开(公告)日：2004-06-01

申请号：US10026613

申请日：2001-12-27

申请人： Atsushi Kurokawa ,  Masao Yamane ,  Kazuhiro Mochizuki

发明人： Atsushi Kurokawa ,  Masao Yamane ,  Kazuhiro Mochizuki

IPC分类号： H01L218222

CPC分类号： H01L29/7304 ,  H01L21/8252 ,  H01L27/0605 ,  H01L28/20 ,  H01L29/73

摘要： A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a semiconductor substrate. In the bipolar transistor device, the base layers of a plurality of the transistor elements are extended in parallel to each other and those base layers are separated from each other. In each separated base layer, a first base electrode is formed on a part of the base layer which is separated from an emitter junction with the emitter layer, and a second base electrode is formed on another portion of the base layer closer to the emitter junction than the first base electrode. To dispose the base electrodes of a plurality of the transistor elements in parallel to each other, a base wiring is connected to the first base electrodes of those elements electrically. Consequently, a ballast resistor that causes no variation in the resistance value can be connected to each of a plurality of the transistor elements.

摘要翻译： 通过并联连接多个晶体管元件来形成具有大电流容量的双极晶体管器件，每个晶体管元件具有分别形成在半导体衬底中的集电极层，基极层和发射极层。 在双极晶体管器件中，多个晶体管元件的基极层彼此平行地延伸，并且这些基极层彼此分离。 在每个分离的基底层中，第一基极形成在与发射极层的发射极结分离的基底层的一部分上，并且第二基极形成在基极层的更靠近发射极结的另一部分 比第一基极。 为了将多个晶体管元件的基极电极彼此平行地配置，基极配线与这些元件的第一基极电连接。 因此，不会导致电阻值变动的镇流电阻器可以连接到多个晶体管元件中的每一个。

公开(公告)号：US06573540B2

公开(公告)日：2003-06-03

申请号：US10026968

申请日：2001-12-27

申请人： Atsushi Kurokawa ,  Masao Yamane ,  Kazuhiro Mochizuki

发明人： Atsushi Kurokawa ,  Masao Yamane ,  Kazuhiro Mochizuki

IPC分类号： H01L31072

CPC分类号： H01L29/7304 ,  H01L21/8252 ,  H01L27/0605 ,  H01L28/20 ,  H01L29/73

摘要： A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a semiconductor substrate. In the bipolar transistor device, the base layers of a plurality of the transistor elements are extended in parallel to each other and those base layers are separated from each other. In each separated base layer, a first base electrode is formed on a part of the base layer which is separated from an emitter junction with the emitter layer, and a second base electrode is formed on another portion of the base layer closer to the emitter junction than the first base electrode. To dispose the base electrodes of a plurality of the transistor elements in parallel to each other, a base wiring is connected to the first base electrodes of those elements electrically. Consequently, a ballast resistor that causes no variation in the resistance value can be connected to each of a plurality of the transistor elements.

公开(公告)号：US08476731B2

公开(公告)日：2013-07-02

申请号：US13349959

申请日：2012-01-13

申请人： Akihisa Terano ,  Kazuhiro Mochizuki ,  Takashi Ishigaki

发明人： Akihisa Terano ,  Kazuhiro Mochizuki ,  Takashi Ishigaki

IPC分类号： H01L29/47 ,  H01L29/40

CPC分类号： H01L29/872 ,  H01L29/0649 ,  H01L29/2003

摘要： In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly.

摘要翻译： 在氮化物半导体上的肖特基电极形成区域中，肖特基电极和氮化物半导体层的表面的总长度比肖特基电极形成区域的周长长。 总长度优选比周长长10倍。 例如，肖特基电极同心圆形地形成。

公开(公告)号：US5668402A

公开(公告)日：1997-09-16

申请号：US66635

申请日：1993-05-24

申请人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

发明人： Kazuhiro Mochizuki ,  Shigeo Goto ,  Chushirou Kusano ,  Masahiko Kawata ,  Hiroshi Masuda ,  Katsuhiko Mitani ,  Susumu Takahashi

IPC分类号： H01L29/73 ,  A61F7/02 ,  H01L21/20 ,  H01L21/331 ,  H01L21/338 ,  H01L29/04 ,  H01L29/205 ,  H01L29/737 ,  H01L29/812

CPC分类号： H01L29/045 ,  H01L21/02395 ,  H01L21/02433 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02609 ,  A61F2007/0265

摘要： A semiconductor device comprises a semiconductor substrate formed by a first single crystalline semiconductor material and semiconductor layers formed on the semiconductor substrate by a second single crystalline semiconductor material doped with an element which can easily surface segregate. The surface of the semiconductor substrate is formed of a crystalline plane substantially equivalent to a facet plane which is formed on the surface of the second single crystalline semiconductor material if the second single crystalline semiconductor material is epitaxially grown with being doped with the element on a (100) plane of the first single crystalline semiconductor material.

摘要翻译： 半导体器件包括由第一单晶半导体材料形成的半导体衬底和通过掺杂有易于表面分离的元件的第二单晶半导体材料形成在半导体衬底上的半导体层。 半导体衬底的表面由与第二单晶半导体材料的表面上形成的小平面基本相同的晶面形成，如果第二单晶半导体材料被外延生长，在第 100）平面的第一单晶半导体材料。

公开(公告)号：US20120228626A1

公开(公告)日：2012-09-13

申请号：US13366313

申请日：2012-02-04

申请人： Kazuhiro Mochizuki ,  Takashi Ishigaki ,  Akihisa Terano ,  Tomonobu Tsuchiya

发明人： Kazuhiro Mochizuki ,  Takashi Ishigaki ,  Akihisa Terano ,  Tomonobu Tsuchiya

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L29/872 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66143

摘要： In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.

摘要翻译： 在包括具有通过交替层叠禁带宽度不同的GaN（氮化镓）膜和阻挡膜形成的异质结单元的堆叠结构的半导体器件中，形成为与堆叠结构的一个侧壁接触的肖特基势垒的第一电极，以及 形成为与另一侧壁接触的第二电极，在第一电极和阻挡膜之间插入氧化膜。 因此，由于阻挡膜的处理，防止反向泄漏电流流过残留在阻挡膜中的缺陷，使得肖特基势垒二极管的反向泄漏电流降低。

公开(公告)号：US20070241427A1

公开(公告)日：2007-10-18

申请号：US11686396

申请日：2007-03-15

申请人： Kazuhiro Mochizuki ,  Natsuki Yokoyama

发明人： Kazuhiro Mochizuki ,  Natsuki Yokoyama

IPC分类号： H01L31/00 ,  H01L29/739 ,  H01L27/082

CPC分类号： H01L21/8213 ,  H01L21/101 ,  H01L27/0647 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/66068 ,  H01L29/6631 ,  H01L29/732 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00014

摘要： In conventional mesa-type npn bipolar transistors, the improvement of a current gain and the miniaturization of the transistor have been unachievable simultaneously as a result of a trade-off being present between lateral diffusion and recombination of the electrons which have been injected from an emitter layer into a base layer, and a high-density base contact region—emitter mesa distance. In contrast to the above, the present invention is provided as follows: The gradient of acceptor density in the depth direction of a base layer is greater at the edge of an emitter layer than at the edge of a collector layer. Also, the distance between a first mesa structure including the emitter layer and the base layer, and a second mesa structure including the base layer and the collector layer, is controlled to range from 3 μm to 9 μm. In addition, in order for the above to be implemented with high controllability, the base layer is formed of a first p-type base layer having an acceptor of uniform density, and a second p-type base layer whose density is greater than the uniform acceptor density of the first base layer while having a gradient in the depth direction of the second base layer. These features produce the advantageous effect that it is possible to provide a high-temperature adaptable, power-switching bipolar transistor that ensures a current gain high enough for practical use and is suitable for miniaturization.

摘要翻译： 在传统的台面型npn双极型晶体管中，由于在从发射极注入的电子的横向扩散和复合之间存在权衡的结果，电流增益的提高和晶体管的小型化是不可实现的 层到基层，以及高密度基极接触区域 - 发射极台面距离。 与上述相反，本发明提供如下：基底层的深度方向上的受主密度梯度在发射极层的边缘处比在集电极层的边缘处更大。 此外，包括发射极层和基底层的第一台面结构之间的距离和包括基底层和集电体层的第二台面结构的距离被控制在3μm到9μm的范围。 此外，为了实现上述的高可控性，基层由具有均匀密度的受体的第一p型基底层和密度大于均匀的第二p型基底层形成 同时具有第二基底层的深度方向上的梯度的第一基底层的受主密度。 这些特征产生有利的效果是可以提供高温适应性的功率开关双极晶体管，其确保电流增益足够高以用于实际应用并且适合于小型化。

公开(公告)号：US08598594B2

公开(公告)日：2013-12-03

申请号：US13366313

申请日：2012-02-04

申请人： Kazuhiro Mochizuki ,  Takashi Ishigaki ,  Akihisa Terano ,  Tomonobu Tsuchiya

发明人： Kazuhiro Mochizuki ,  Takashi Ishigaki ,  Akihisa Terano ,  Tomonobu Tsuchiya

IPC分类号： H01L29/205 ,  H01L21/20

CPC分类号： H01L29/872 ,  H01L29/0649 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66143

摘要： In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.

摘要翻译： 在包括具有通过交替层叠禁带宽度不同的GaN（氮化镓）膜和阻挡膜形成的异质结单元的堆叠结构的半导体器件中，形成为与堆叠结构的一个侧壁接触的肖特基势垒的第一电极，以及 形成为与另一侧壁接触的第二电极，在第一电极和阻挡膜之间插入氧化膜。 因此，由于阻挡膜的处理，防止反向泄漏电流流过残留在阻挡膜中的缺陷，使得肖特基势垒二极管的反向泄漏电流降低。

公开(公告)号：US20120117816A1

公开(公告)日：2012-05-17

申请号：US13319865

申请日：2010-05-25

申请人： Katsuhiko Yokohama ,  Kenichiro Kosaka ,  Keigo Matsumoto ,  Noboru Kawamoto ,  Yoshiki Yamaguchi ,  Masaaki Kinoshita ,  Koji Ohura ,  Atsushi Tsutsumi ,  Shozo Kaneko ,  Kazuhiro Mochizuki ,  Chihiro Fushimi ,  Yasuki Kansha

发明人： Katsuhiko Yokohama ,  Kenichiro Kosaka ,  Keigo Matsumoto ,  Noboru Kawamoto ,  Yoshiki Yamaguchi ,  Masaaki Kinoshita ,  Koji Ohura ,  Atsushi Tsutsumi ,  Shozo Kaneko ,  Kazuhiro Mochizuki ,  Chihiro Fushimi ,  Yasuki Kansha

IPC分类号： F26B3/084 ,  F26B21/06

CPC分类号： F23K1/04 ,  C10L9/08 ,  F23K2201/20 ,  F26B23/004 ,  Y02B30/52 ,  Y02E50/30 ,  Y02P70/405

摘要： A water-containing solid fuel drying apparatus that can efficiently dry with low energy consumption by effectively utilizing sensible heat and latent heat of a heating medium for drying, etc. is provided. A drying apparatus (10) that dries water-containing solid fuel includes a dryer (20) that injects scavenging gas into the interior of a drying vessel (21) in which a heat transfer pipe (22) is disposed; a dust collector (13) that removes microparticles from microparticle-containing mixed gaseous fluid that has flowed out of the drying vessel (21); a compressor (30) that compresses vapor-containing mixed gaseous fluid; a vapor heat exchanger (31) that preheats low-pressure mixed gaseous fluid with high-pressure mixed gaseous fluid compressed at the compressor (30); and a gas-liquid separator (14), in which the high-pressure mixed gaseous fluid is employed as drying gas that radiates heat by passing through the heat transfer pipe (22), that performs gas-liquid separation of water-containing scavenging gas that has flowed out of the heat transfer pipe (22) while containing condensed water of vapor generated due to heat radiation, wherein the water-containing solid fuel is dried by heating the water-containing solid fuel in the drying vessel (21) utilizing latent heat and sensible heat of the mixed gaseous fluid.

摘要翻译： 提供一种含水固体燃料干燥装置，其能够通过有效地利用用于干燥的加热介质的显热和潜热等而能够有效地干燥低能量消耗。 干燥含水固体燃料的干燥装置（10）包括将清扫气体注入到设置有传热管（22）的干燥容器（21）的内部的干燥机（20） 从所述干燥容器（21）流出的含微粒混合气体流体中除去微粒的集尘器（13）。 压缩机（30），其压缩含蒸汽的混合气体流体; 蒸汽热交换器（31），用于在压缩机（30）处压缩的高压混合气体流体预热低压混合气体流体; 和气液分离器（14），其中采用高压混合气体流体作为通过传热管（22）散热的干燥气体，其进行含水清除气体的气液分离 其从传热管（22）流出，同时包含由于热辐射而产生的蒸气的冷凝水，其中通过利用潜在的方式加热干燥容器（21）中的含水固体燃料来干燥含水固体燃料 混合气态流体的热和显热。

公开(公告)号：US07906796B2

公开(公告)日：2011-03-15

申请号：US12176635

申请日：2008-07-21

申请人： Kazuhiro Mochizuki ,  Hidekatsu Onose ,  Natsuki Yokoyama

发明人： Kazuhiro Mochizuki ,  Hidekatsu Onose ,  Natsuki Yokoyama

IPC分类号： H01L29/74

CPC分类号： H01L29/1608 ,  H01L29/0804 ,  H01L29/66068 ,  H01L29/7322

摘要： In a bipolar device, such as transistor or a thyristor, the emitter layer or the anode layer is formed of two high-doped and low-doped layers, a semiconductor region for suppressing recombination comprising an identical semiconductor having an impurity density identical with that of the low-doped layer is present being in contact with a base layer or a gate layer and a surface passivation layer, and the width of the semiconductor region for suppressing recombination is defined equal with or longer than the diffusion length of the carrier. This provides, among other things, an effect of attaining reduction in the size of the bipolar transistor or improvement of the switching frequency of the thyristor without deteriorating the performance.

摘要翻译： 在诸如晶体管或晶闸管的双极器件中，发射极层或阳极层由两个高掺杂和低掺杂层形成，用于抑制复合的半导体区域包括具有与 存在与基底层或栅极层和表面钝化层接触的低掺杂层，并且用于抑制复合的半导体区域的宽度被限定为等于或长于载体的扩散长度。 除此之外，这提供了在不降低性能的情况下实现双极晶体管的尺寸的减小或晶闸管的开关频率的提高的效果。

公开(公告)号：US06639257B2

公开(公告)日：2003-10-28

申请号：US10133498

申请日：2002-04-29

申请人： Atsushi Kurokawa ,  Masao Yamane ,  Kazuhiro Mochizuki

发明人： Atsushi Kurokawa ,  Masao Yamane ,  Kazuhiro Mochizuki

IPC分类号： H01L310328

CPC分类号： H01L29/7304 ,  H01L21/8252 ,  H01L27/0605 ,  H01L28/20 ,  H01L29/73

摘要： A bipolar transistor device with a large current capacity is formed by connecting a plurality of transistor elements to each other in parallel, each transistor element having a collector layer, a base layer, and an emitter layer formed respectively in a semiconductor substrate. In the bipolar transistor device, the base layers of a plurality of the transistor elements are extended in parallel to each other and those base layers are separated from each other. In each separated base layer, a first base electrode is formed on a part of the base layer which is separated from an emitter junction with the emitter layer, and a second base electrode is formed on another portion of the base layer closer to the emitter junction than the first base electrode. To dispose the base electrodes of a plurality of the transistor elements in parallel to each other, a base wiring is connected to the first base electrodes of those elements electrically. Consequently, a ballast resistor that causes no variation in the resistance value can be connected to each of a plurality of the transistor elements.

摘要翻译： 通过并联连接多个晶体管元件来形成具有大电流容量的双极晶体管器件，每个晶体管元件具有分别形成在半导体衬底中的集电极层，基极层和发射极层。 在双极晶体管器件中，多个晶体管元件的基极层彼此平行地延伸，并且这些基极层彼此分离。 在每个分离的基底层中，在与发射极层的发射极结分离的基底层的一部分上形成第一基极，并且第二基极形成在靠近发射极结的基极层的另一部分上 比第一基极。 为了将多个晶体管元件的基极电极彼此平行地配置，基极配线与这些元件的第一基极电连接。 因此，不会导致电阻值变动的镇流电阻器可以连接到多个晶体管元件中的每一个。