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公开(公告)号：US20120228626A1
公开(公告)日：2012-09-13
申请号：US13366313
申请日：2012-02-04
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L29/872 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/66143
摘要： In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.
摘要翻译： 在包括具有通过交替层叠禁带宽度不同的GaN（氮化镓）膜和阻挡膜形成的异质结单元的堆叠结构的半导体器件中，形成为与堆叠结构的一个侧壁接触的肖特基势垒的第一电极，以及 形成为与另一侧壁接触的第二电极，在第一电极和阻挡膜之间插入氧化膜。 因此，由于阻挡膜的处理，防止反向泄漏电流流过残留在阻挡膜中的缺陷，使得肖特基势垒二极管的反向泄漏电流降低。
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公开(公告)号：US08598594B2
公开(公告)日：2013-12-03
申请号：US13366313
申请日：2012-02-04
IPC分类号： H01L29/205 , H01L21/20
CPC分类号： H01L29/872 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/66143
摘要： In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced.
摘要翻译： 在包括具有通过交替层叠禁带宽度不同的GaN（氮化镓）膜和阻挡膜形成的异质结单元的堆叠结构的半导体器件中，形成为与堆叠结构的一个侧壁接触的肖特基势垒的第一电极，以及 形成为与另一侧壁接触的第二电极，在第一电极和阻挡膜之间插入氧化膜。 因此，由于阻挡膜的处理，防止反向泄漏电流流过残留在阻挡膜中的缺陷，使得肖特基势垒二极管的反向泄漏电流降低。
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公开(公告)号：US07596160B2
公开(公告)日：2009-09-29
申请号：US11841010
申请日：2007-08-20
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2201 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current.
摘要翻译： 具有低电阻和高可靠性的氮化物半导体激光器。 通过选择性生长形成掩埋层，并且p型包覆层的形状被倒梯形，使得p型覆层和p型接触层的电阻降低。 为了激光器的长期可靠性，埋层是一种高电阻半绝缘层，可以抑制漏电流的增加。
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公开(公告)号：US20080247433A1
公开(公告)日：2008-10-09
申请号：US11841010
申请日：2007-08-20
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/0202 , H01S5/2201 , H01S5/2224 , H01S5/2226 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/34333 , H01S2304/04
摘要： A nitride semiconductor laser which features low resistance and high reliability. A buried layer is formed by selective growth and the shape of a p-type cladding layer is inverted trapezoidal so that the resistance of the p-type cladding layer and that of a p-type contact layer are decreased. For long-term reliability of the laser, the buried layer is a high-resistance semi-insulating layer which suppresses increase in leak current.
摘要翻译： 具有低电阻和高可靠性的氮化物半导体激光器。 通过选择性生长形成掩埋层，并且p型包覆层的形状被倒梯形，使得p型覆层和p型接触层的电阻降低。 为了激光器的长期可靠性，埋层是一种高电阻半绝缘层，可以抑制漏电流的增加。
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公开(公告)号：US08124432B2
公开(公告)日：2012-02-28
申请号：US12630008
申请日：2009-12-03
IPC分类号： H01L21/205 , H01L31/18 , H01S5/22 , H01S5/343
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/0075 , H01S5/2009 , H01S5/3213 , H01S5/3215 , H01S5/3407
摘要： In an InGaN-based nitride semiconductor optical device having a long wavelength (440 nm or more) equal to or more than that of blue, the increase of a wavelength is realized while suppressing In (Indium) segregation and deterioration of crystallinity. In the manufacture of an InGaN-based nitride semiconductor optical device having an InGaN-based quantum well active layer including an InGaN well layer and an InGaN barrier layer, a step of growing the InGaN barrier layer includes: a first step of adding hydrogen at 1% or more to a gas atmosphere composed of nitrogen and ammonia and growing a GaN layer in the gas atmosphere; and a second step of growing the InGaN barrier layer in a gas atmosphere composed of nitrogen and ammonia.
摘要翻译： 在具有等于或大于蓝色的长波长（440nm或更大）的InGaN基氮化物半导体光学器件中，在抑制In（铟）偏析和结晶度劣化的同时实现波长的增加。 在制造具有包括InGaN阱层和InGaN阻挡层的InGaN基量子阱有源层的InGaN基氮化物半导体光学器件中，生长InGaN势垒层的步骤包括：第一步骤，在1 ％以上，由氮和氨组成的气体气氛，并在气体气氛中生长GaN层; 以及在由氮和氨组成的气体气氛中生长InGaN势垒层的第二步骤。
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6.发明授权公开(公告)号：US07822088B2
公开(公告)日：2010-10-26
申请号：US12216817
申请日：2008-07-11
申请人： Akihisa Terano , Tomonobu Tsuchiya
发明人： Akihisa Terano , Tomonobu Tsuchiya
IPC分类号： H01S5/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/32 , H01L33/40 , H01S5/0213 , H01S5/22 , H01S5/3063 , H01S5/3216
摘要： A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of X≦Y to the first p-type clad layer doped with a p-type impurity containing at least an AlXGa1-XN (0
摘要翻译： 将提供一种在低电压下操作并具有优异的可靠性和性能的氮化物半导体发光器件。 它具有第一p型覆盖层和第二p型覆盖层的至少两层的多层p型覆盖层，其中第二p型覆盖层含有较高的p型杂质 浓度为第一p型覆盖层的厚度范围为2至20nm，并且Al Al Ga 1-Y N由Al Y Ga 1-Y N形成，其Al含量与掺杂p型覆层的第一p型覆盖层具有X＆ 至少含有Al x Ga 1-x N（0
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7.发明申请公开(公告)号：US20090016397A1
公开(公告)日：2009-01-15
申请号：US12216817
申请日：2008-07-11
申请人： Akihisa Terano , Tomonobu Tsuchiya
发明人： Akihisa Terano , Tomonobu Tsuchiya
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/025 , H01L33/32 , H01L33/40 , H01S5/0213 , H01S5/22 , H01S5/3063 , H01S5/3216
摘要： A nitride semiconductor light emitting device operating on a low voltage and excelling in reliability and performance is to be provided. It has a multi-layered p-type clad layer of at least two layers of a first p-type clad layer and a second p-type clad layer, wherein the second p-type clad layer contains a p-type impurity in a higher concentration the first p-type clad layer does, has a thickness ranging from 2 to 20 nm, and is formed of AlYGa1-YN whose Al content has a relationship of X≦Y to the first p-type clad layer doped with a p-type impurity containing at least an AlxGa1-XN (0
摘要翻译： 将提供一种在低电压下操作并具有优异的可靠性和性能的氮化物半导体发光器件。 它具有第一p型覆盖层和第二p型覆盖层的至少两层的多层p型覆盖层，其中第二p型覆盖层含有较高的p型杂质 浓度第一p型覆盖层的厚度范围为2至20nm，并且由Al含量与掺杂p的第一p型覆盖层的X
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公开(公告)号：US20080069493A1
公开(公告)日：2008-03-20
申请号：US11701467
申请日：2007-02-02
CPC分类号： G02B6/12004 , B82Y20/00 , G02F1/01708 , G02F2001/0157 , H01S5/0265
摘要： An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. AnInGaAs Player is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.
摘要翻译： 集成光电子器件包括含有InGaAlAs作为主要成分的光波导元件，其形成在InP衬底上并且通过对接连接以端对端的方式连接。 在InP衬底上形成AnInGaAs Player，以在集成光电子器件的制造期间抑制InP的质量传输。 在InP衬底在约700℃的晶体生长温度下加热之前形成InGaAsP层以形成InGaAlAs光波导元件。
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公开(公告)号：US07038233B2
公开(公告)日：2006-05-02
申请号：US10782897
申请日：2004-02-23
申请人： Tomonobu Tsuchiya , Tsukuru Ohtoshi
发明人： Tomonobu Tsuchiya , Tsukuru Ohtoshi
IPC分类号： H01L29/06 , H01L31/328 , H01L31/336 , H01L31/72 , H01L31/109
CPC分类号： B82Y20/00 , H01S5/02208 , H01S5/02284 , H01S5/0683 , H01S5/2224 , H01S5/2275 , H01S5/3403 , H01S5/34306 , H01S5/34313 , H01S5/34366
摘要： An InGaAlAs-based buried type laser is expected to improve properties of the device, but generates defects at a re-growth interface and is difficult to realize a long-term reliability necessary for optical communication, due to inclusion of Al in an active layer. A semiconductor optical device and an optical module including a package substrate and a semiconductor optical device mounted on the package substrate are provided, whereby there are realized the improvement of device properties and the long-term reliability through the use of an Al composition ratio-reduced tensile strained quantum well layer.
摘要翻译： 预期基于InGaAlAs的掩埋式激光器可以改善器件的性能，但是由于在有源层中包含Al，所以在再生长界面处产生缺陷，难以实现光通信所需的长期可靠性。 提供了一种半导体光学器件和包括安装在封装衬底上的封装衬底和半导体光学器件的光学模块，由此通过使用Al组成比降低来实现器件性能和长期可靠性的提高 拉伸应变量子阱层。
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公开(公告)号：US06821801B1
公开(公告)日：2004-11-23
申请号：US10777071
申请日：2004-02-13
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01L31/1075 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/1014 , H01S5/1228 , H01S5/2201 , H01S5/222 , H01S5/2223 , H01S5/2224 , H01S5/2231 , H01S5/227 , H01S5/2275 , H01S5/3211 , H01S5/34306 , H01S5/3436 , H01S2304/04
摘要： The invention provides a manufacturing method of a laser diode having buried grown layer with less crystal defects and with low consumption power and having high reliability in a buried heterostructure laser diode using an InGaAlAs type material as an active layer, by preventing the inhibition of burying and regrowing of the active layer caused by oxidation of Al contained in the active layer. A manufacturing method of a semiconductor laser diode and the active layer comprises a material at least containing Al and having a buried hetero-cross sectional structure, formation of the buried heterostructure, comprising the steps of fabricating the active layer into a stripe shape or mesa shape by etching including at least wet etching, cleaning the stripe-shape sidewall of the core layer with a gas containing chlorine or other halogen element in a crystal growing apparatus and burying the active layer in the semiconductor.
摘要翻译： 本发明提供了一种激光二极管的制造方法，其具有埋入生长层，其具有较少的晶体缺陷和低功耗，并且在使用InGaAlAs型材料作为有源层的掩埋异质结构激光二极管中具有高可靠性，通过防止掩埋和 一种半导体激光二极管和有源层的制造方法，包括至少包含Al并具有埋入异质截面结构的材料，形成埋入异质结构 包括以下步骤：通过至少包括湿法蚀刻的蚀刻将活性层制成条形或台面形状，在晶体生长装置中用含氯或其它卤素元素的气体清洗芯层的条状侧壁，并将其埋入 半导体中的有源层。
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