公开(公告)号：US20080090366A1

公开(公告)日：2008-04-17

申请号：US11870436

申请日：2007-10-11

申请人： Huilong Zhu ,  Philip Oldiges ,  Bruce Doris ,  Xinlin Wang ,  Oleg Gluschenkov ,  Huajie Chen ,  Ying Zhang

发明人： Huilong Zhu ,  Philip Oldiges ,  Bruce Doris ,  Xinlin Wang ,  Oleg Gluschenkov ,  Huajie Chen ,  Ying Zhang

IPC分类号： H01L21/336

CPC分类号： H01L29/7849 ,  H01L29/0653 ,  H01L29/1054 ,  H01L29/7842 ,  H01L29/78603 ,  H01L29/78612 ,  H01L29/78618 ,  H01L29/78687

摘要： Channel depth in a field effect transistor is limited by an intra-layer structure including a discontinuous film or layer formed within a layer or substrate of semiconductor material. Channel depth can thus be controlled much in the manner of SOI or UT-SOI technology but with less expensive substrates and greater flexibility of channel depth control while avoiding floating body effects characteristic of SOI technology. The profile or cross-sectional shape of the discontinuous film may be controlled to an ogee or staircase shape to improve short channel effects and reduce source/drain and extension resistance without increase of capacitance. Materials for the discontinuous film may also be chosen to impose stress on the transistor channel from within the substrate or layer and provide increased levels of such stress to increase carrier mobility. Carrier mobility may be increased in combination with other meritorious effects.

摘要翻译： 场效应晶体管中的沟道深度由包括在半导体材料的层或衬底内形成的不连续膜或层的层内结构限制。 因此，可以以SOI或UT-SOI技术的方式控制通道深度，但是具有较便宜的衬底和更大的通道深度控制的灵活性，同时避免SOI技术的浮体效应特性。 不连续膜的轮廓或横截面形状可以被控制为奥格或阶梯形状，以改善短通道效应，并且在不增加电容的情况下降低源极/漏极和延伸电阻。 也可以选择用于不连续膜的材料以在衬底或层内从晶体管沟道施加应力，并提供增加的这种应力水平以增加载流子迁移率。 携带者的流动性可能会与其他有利的影响相结合。

公开(公告)号：US20070262361A1

公开(公告)日：2007-11-15

申请号：US11830464

申请日：2007-07-30

申请人： Huilong Zhu ,  Bruce Doris ,  Huajie Chen ,  Patricia Mooney ,  Stephen Bedell

发明人： Huilong Zhu ,  Bruce Doris ,  Huajie Chen ,  Patricia Mooney ,  Stephen Bedell

IPC分类号： H01L27/092

CPC分类号： H01L27/1203 ,  H01L21/76254 ,  H01L21/823807 ,  H01L21/823878 ,  H01L21/84

摘要： The present invention provides a strained Si directly on insulator (SSDOI) substrate having multiple crystallographic orientations and a method of forming thereof. Broadly, but in specific terms, the inventive SSDOI substrate includes a substrate; an insulating layer atop the substrate; and a semiconducting layer positioned atop and in direct contact with the insulating layer, the semiconducting layer comprising a first strained Si region and a second strained Si region; wherein the first strained Si region has a crystallographic orientation different from the second strained Si region and the first strained Si region has a crystallographic orientation the same or different from the second strained Si region. The strained level of the first strained Si region is different from that of the second strained Si region.

摘要翻译： 本发明提供了具有多个结晶取向的应变Si直接绝缘体（SSDOI）基板及其形成方法。 广义上，但是具体来说，本发明的SSDOI基板包括基板; 衬底顶部的绝缘层; 以及位于顶部并与绝缘层直接接触的半导体层，所述半导体层包括第一应变Si区和第二应变Si区; 其中所述第一应变Si区具有不同于所述第二应变Si区的晶体取向，并且所述第一应变Si区具有与所述第二应变Si区相同或不同的晶体取向。 第一应变Si区域的应变水平与第二应变Si区域的应变水平不同。

公开(公告)号：US07176481B2

公开(公告)日：2007-02-13

申请号：US10905598

申请日：2005-01-12

申请人： Huajie Chen ,  Dureseti Chidambarrao ,  Siddhartha Panda ,  Sang-Hyun Oh ,  Henry K. Utomo ,  Werner A. Rausch

发明人： Huajie Chen ,  Dureseti Chidambarrao ,  Siddhartha Panda ,  Sang-Hyun Oh ,  Henry K. Utomo ,  Werner A. Rausch

IPC分类号： H01L29/06

CPC分类号： H01L29/7842 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/7848

摘要： Disclosed is an integrated circuit structure and a method of making such a structure that has a substrate and P-type and N-type transistors on the substrate. The N-type transistor extension and source/drain regions comprise dopants implanted into the substrate. The P-type transistor extension and source/drain regions partially include a strained epitaxial silicon germanium, wherein the strained silicon germanium comprises of two layers, with a top layer that is closer to the gate stack than the bottom layer. The strained silicon germanium is in-situ doped and creates longitudinal stress on the channel region.

摘要翻译： 公开了一种集成电路结构以及在衬底上具有衬底和P型和N型晶体管的结构的方法。 N型晶体管延伸和源极/漏极区域包括注入到衬底中的掺杂剂。 P型晶体管延伸和源极/漏极区域部分地包括应变外延硅锗，其中应变硅锗包括两层，顶层比底层更靠近栅极堆叠。 应变硅锗被原位掺杂并在沟道区域上产生纵向应力。

公开(公告)号：US07026249B2

公开(公告)日：2006-04-11

申请号：US10448954

申请日：2003-05-30

申请人： Stephen W. Bedell ,  Huajie Chen ,  Keith E. Fogel ,  Devendra K. Sadana

发明人： Stephen W. Bedell ,  Huajie Chen ,  Keith E. Fogel ,  Devendra K. Sadana

IPC分类号： H01L21/302

CPC分类号： H01L21/7624 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02664 ,  Y10T428/12674

摘要： The present invention provides a method of fabricating a SiGe-on-insulator substrate in which lattice engineering is employed to decouple the interdependence between SiGe thickness, Ge fraction and strain relaxation. The method includes providing a SiGe-on-insulator substrate material comprising a SiGe alloy layer having a selected in-plane lattice parameter, a selected thickness parameter and a selected Ge content parameter, wherein the selected in-plane lattice parameter has a constant value and one or both of the other parameters, i.e., thickness or Ge content, have adjustable values; and adjusting one or both of the other parameters to final selected values, while maintaining the selected in-plane lattice parameter. The adjusting is achieved utilizing either a thinning process or a thermal dilution process depending on which parameters are fixed and which are adjustable.

摘要翻译： 本发明提供了一种制造绝缘体上硅衬底的方法，其中使用晶格工程来去耦合SiGe厚度，Ge分数和应变松弛之间的相互依赖性。 该方法包括提供一种绝缘体上硅衬底材料，其包括具有选定的面内晶格参数的SiGe合金层，选定的厚度参数和所选择的Ge含量参数，其中所选择的面内晶格参数具有恒定值， 一个或两个其他参数，即厚度或Ge含量，具有可调整的值; 并且在保持所选择的平面内晶格参数的同时将其他参数中的一个或两个调整为最终选择的值。 根据哪些参数是固定的，哪些是可调节的，利用稀化过程或热稀释过程实现调节。

公开(公告)号：US06972247B2

公开(公告)日：2005-12-06

申请号：US10728519

申请日：2003-12-05

申请人： Stephen W. Bedell ,  Guy M. Cohen ,  Huajie Chen

发明人： Stephen W. Bedell ,  Guy M. Cohen ,  Huajie Chen

IPC分类号： H01L21/20 ,  H01L21/324 ,  H01L21/762 ,  H01L21/425

CPC分类号： H01L21/324

摘要： A method of fabricating a strained semiconductor-on-insulator (SSOI) substrate in which the strained semiconductor is a thin semiconductor layer having a thickness of less than 50 nm that is located directly atop an insulator layer of a preformed silicon-on-insulator substrate is provided. Wafer bonding is not employed in forming the SSOI substrate of the present invention.

摘要翻译： 一种制造应变半导体绝缘体（SSOI）衬底的方法，其中应变半导体是厚度小于50nm的薄半导体层，其直接位于预成型的绝缘体上硅衬底上的绝缘体层的顶部 被提供。 在形成本发明的SSOI基板时不使用晶片接合。

公开(公告)号：US20050236668A1

公开(公告)日：2005-10-27

申请号：US10709239

申请日：2004-04-23

申请人： Huilong Zhu ,  Bruce Doris ,  Huajie Chen

发明人： Huilong Zhu ,  Bruce Doris ,  Huajie Chen

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L31/0392

CPC分类号： H01L29/7845 ,  H01L21/28035 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/4925 ,  H01L29/66545 ,  H01L29/7842

摘要： Structures and methods of manufacturing are disclosed of dislocation free stressed channels in bulk silicon and SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) devices by gate stress engineering with SiGe and/or Si:C. A CMOS device comprises a substrate of either bulk Si or SOI, a gate dielectric layer over the substrate, and a stacked gate structure of SiGe and/or Si:C having stresses produced at the interfaces of SSi(strained Si)/SiGe or SSi/Si:C in the stacked gate structure. The stacked gate structure has a first stressed film layer of large grain size Si or SiGe over the gate dielectric layer, a second stressed film layer of strained SiGe or strained Si:C over the first stressed film layer, and a semiconductor or conductor such as p(poly)-Si over the second stressed film layer.

摘要翻译： 公开了通过具有SiGe和/或Si：C的栅极应力工程的体硅和SOI（绝缘体上硅）CMOS（互补金属氧化物半导体）器件中的无位错应力通道的结构和方法。 CMOS器件包括块体Si或SOI的衬底，衬底上的栅极介电层，以及SiGe和/或Si：C的层叠栅极结构，其具有在SSi（应变Si）/ SiGe或SSi的界面处产生的应力 / Si：C在堆叠栅结构中。 层叠栅极结构在栅介质层上具有大晶粒尺寸的Si或SiGe的第一应力膜层，在第一应力膜层上的应变SiGe或应变Si：C的第二应力膜层，以及半导体或导体 p（聚）-Si在第二应力膜层上。

公开(公告)号：US06924517B2

公开(公告)日：2005-08-02

申请号：US10604907

申请日：2003-08-26

申请人： Huajie Chen ,  Bruce B. Doris ,  Philip J. Oldiges ,  Xinlin Wang ,  Huilong Zhu

发明人： Huajie Chen ,  Bruce B. Doris ,  Philip J. Oldiges ,  Xinlin Wang ,  Huilong Zhu

IPC分类号： H01L21/336 ,  H01L29/10 ,  H01L29/786

CPC分类号： H01L29/78696 ,  H01L29/1054 ,  H01L29/66772 ,  H01L29/78603 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78684

摘要： A field effect transistor (FET), integrated circuit (IC) chip including the FETs and a method of forming the FETS. The devices have a thin channel, e.g., an ultra-thin (smaller than or equal to 10 nanometers (10 nm)) silicon on insulator (SOI) layer. Source/drain regions are located in recesses at either end of the thin channel and are substantially thicker (e.g., 30 nm) than the thin channel. Source/drain extensions and corresponding source/drain regions are self aligned to the FET gate and thin channel.

摘要翻译： 包括FET的场效应晶体管（FET），集成电路（IC）芯片和形成FET的方法。 器件具有薄沟道，例如超薄（小于或等于10纳米（10nm））绝缘体上硅（SOI）层。 源极/漏极区位于薄沟道的任一端的凹槽中，并且比薄沟道基本上更厚（例如，30nm）。 源/漏扩展和相应的源极/漏极区域与FET栅极和薄沟道自对准。

公开(公告)号：US09515526B2

公开(公告)日：2016-12-06

申请号：US14235617

申请日：2011-08-29

申请人： Hui Huang ,  Wenming Zhang ,  Yong Xiao ,  Xueying Zeng ,  Huajie Chen ,  Dongsuo Chen ,  Yusheng Hu

发明人： Hui Huang ,  Wenming Zhang ,  Yong Xiao ,  Xueying Zeng ,  Huajie Chen ,  Dongsuo Chen ,  Yusheng Hu

IPC分类号： H02K1/27 ,  H02K1/24

CPC分类号： H02K1/2766 ,  H02K1/246 ,  H02K2213/03

摘要： A motor and a rotor thereof are provided. Taking the distance between the two endpoints of a permanent magnet of a motor rotor that are on the side away from the center of an iron core as the length L of the permanent magnet, and the distance between a line connecting the two endpoints of the permanent magnet that are on the side away from the center of the iron core and the center point on the side of the permanent magnet that is close to the centerline of the iron core as the width H of the permanent magnet, then H/L ≧ 1/10. By adjusting the relationship between the length L and width H of the permanent magnet, the air gap magnetic density of the permanent magnet can be effectively increased.

摘要翻译： 提供电动机及其转子。 将离开铁芯中心的一侧的电动机转子的永磁体的两个端点之间的距离作为永磁体的长度L，以及连接永磁体的两个端点的线之间的距离 磁铁位于远离铁芯中心的一侧，永磁体一侧的中心点与铁芯的中心线接近永磁体的宽度H，则H /L≥1 / 10。 通过调整永磁体的长度L和宽度H之间的关系，能够有效地提高永磁体的气隙磁密度。

公开(公告)号：US09502934B2

公开(公告)日：2016-11-22

申请号：US14235600

申请日：2011-08-29

申请人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

发明人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

IPC分类号： H02K1/27 ,  H02K1/24

CPC分类号： H02K1/2766 ,  H02K1/246 ,  H02K2213/03

摘要： A motor rotor includes an iron core and a permanent magnet arranged inside the iron core, wherein, a plurality of groups of mounting grooves are arranged in the iron core in a circumferential direction of the iron core, and each group of mounting grooves comprises two or more than two mounting grooves arranged at intervals in a radial direction of the iron core; and a plurality of groups of permanent magnets are provided, and each permanent magnet in each group of permanent magnets is correspondingly embedded in the corresponding mounting groove of each group of mounting grooves. A motor having the motor rotor is further provided, and the magnetic reluctance torque of the motor rotor is increased, thereby increasing the output torque of the motor and the efficiency of the motor.

摘要翻译： 电动机转子包括铁芯和布置在铁芯内部的永磁体，其中，多个安装槽组在铁芯的圆周方向上布置在铁芯中，并且每组安装槽包括两个或 多个两个安装槽，沿铁心的径向间隔布置; 并且设置多组永磁体，并且每组永磁体中的每个永磁体相应地嵌入在每组安装槽的相应的安装槽中。 进一步提供具有电动机转子的电动机，并且提高电动机转子的磁阻转矩，从而增加电动机的输出转矩和电动机的效率。

公开(公告)号：US09502930B2

公开(公告)日：2016-11-22

申请号：US14235604

申请日：2011-08-29

申请人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

发明人： Hui Huang ,  Yusheng Hu ,  Dongsuo Chen ,  Huajie Chen ,  Yong Xiao ,  Xueying Zeng ,  Wenming Zhang

IPC分类号： H02K1/27 ,  H02K1/24

CPC分类号： H02K1/27 ,  H02K1/246 ,  H02K1/2766 ,  H02K2213/03

摘要： A motor rotor includes an iron core and permanent magnets provided inside the iron core. The iron core is provided with sets of mounting grooves on the iron core in the peripheral direction of the iron core, each set of mounting grooves having two or more mounting grooves provided intermittently in the radial direction of the iron core. There are sets of permanent magnets, the individual permanent magnet of each set of permanent magnets correspondingly being embedded into the individual mounting grooves of each set of mounting grooves; there is an island region between the outermost layer of mounting grooves and the periphery of the iron core, and an enhancing hole is provided in the island region, an enhancing rod being provided in the enhancing hole. A motor includes a motor stator and the motor rotor, with the motor rotor provided inside the motor stator.

摘要翻译： 电机转子包括铁芯和设置在铁芯内部的永磁体。 铁芯在铁芯的周向上设置有一组安装槽，每组安装槽具有沿铁芯的径向间隔地设置的两个或更多个安装槽。 有一组永磁体，每组永磁体的单个永磁体相应地嵌入每组安装槽的各个安装槽中; 在安装槽的最外层和铁芯的周围之间存在岛状区域，在岛状区域设置有增强孔，在增强孔中设置有增强杆。 电动机包括电动机定子和电动机转子，电动机转子设置在电动机定子内部。