摘要:
A semiconductor measuring tool has a folding mirror configuration that directs a light beam to pass the same space multiple times to reduce the size and footprint. Furthermore, the folding mirrors may reflect the light beam at less than forty-five degrees; thereby allowing for smaller folding mirrors as compared to the prior art.
摘要:
An interferometer system is disclosed. The interferometer system includes two spaced apart reference flats having corresponding reference surfaces forming a cavity therebetween for placement of a polished opaque plate. The surfaces of the plate are approximately 2.5 millimeters or less from the corresponding reference surfaces when the plate is placed in the cavity. The interferometer system also includes two interferometer devices located on diametrically opposite sides of the cavity to map the surfaces of the plate. A light source is optically coupled to the interferometer devices. The light source includes an illuminator configured for producing light of multiple wavelengths and an optical amplitude modulator configured for stabilizing power of the light produced by the illuminator. The interferometer system further includes two interferogram detectors, and at least one computer coupled to receive the outputs of the interferogram detectors for determining thickness variations of the plate.
摘要:
The invention provides a new dual-sided Moiré wafer analysis system that integrates wafer flatness measurement capability with wafer surface defect detection capability. The invention may be, but is not necessarily, embodied in methods and systems for simultaneously applying phase shifting reflective Moiré wafer analysis to the front and back sides of a silicon wafer and comparing or combining the front and back side height maps. This allows wafer surface height for each side of the wafer, thickness variation map, surface nanotopography, shape, flatness, and edge map to be determined with a dual-sided fringe acquisition process. The invention also improves the dynamic range of wafer analysis to measure wafers with large bows and extends the measurement area closer to the wafer edge.
摘要:
A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. A method for filtering data from measurements of localized features on wafers is disclosed. This method includes an algorithm designed to adjust the filtering behavior according to the statistics of extreme data samples.A method for utilizing the 2D window and the data filtering to yield a more robust and more accurate Localized Feature quantification methodology is disclosed.
摘要:
An interferometer system and method may be used to measure substrate thickness or shape. The system may include two spaced apart reference flats having that form an optical cavity between two parallel reference surfaces. A substrate holder may be configured to place the substrate in the cavity with first and second substrate surfaces substantially parallel with corresponding first and second reference surfaces such that a space between the first or second substrate surface is three millimeters or less from a corresponding one of the reference surfaces or a damping surface. Interferometer devices may be located on diametrically opposite sides of the cavity and optically coupled thereto. The interferometers can map variations in spacing between the substrate surfaces and the reference surfaces, respectively, through interference of light optically coupled to and from to the cavity via the interferometer devices.
摘要:
A system with two unequal path interferometers, with a first flat, a second flat, and a cavity between the first and second flats, a holder to receive an object in the cavity such that an optical path remains open between the first and second flats, and a motor coupled to the holder such that the object may be tilted in the cavity to allow for measurements of, and a radiation assembly to direct collimated radiation to the interferometer assembly, a collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the radiation, record interferograms, extract phases of the interferograms to produce phase maps, determine from each map areas with high slopes, tilt the holder to allow measurement of the high slope areas, and process measurement that covers the entire surface of the object.
摘要:
In one embodiment, an interferometer system comprises two unequal path interferometers assemble comprising; a first reference flat having a first length L1 in a first dimension, a second reference flat having a second length L2 in the first dimension, a cavity D1 defined by a distance between the first reference flat and the second reference flat, a wafer holder to receive an object in the cavity such that an optical path remains open at an outer annual area between the first reference flat and the second reference flat and at least one wafer holder motor coupled to the wafer holder such that an object may be tilted in the cavity as to allow for measurements of local areas of interest, and a radiation targeting assembly to direct a collimated radiation beam to the interferometer assembly, a radiation collecting assembly to collect radiation received from the interferometer assembly, and a controller comprising logic to; vary a wavelength of the collimated radiation beam, record interferograms formed by a plurality of surfaces, extract phases of each of the interferograms for each of the plurality of surfaces to produce multiple phase maps, determine each map from its corresponding interferogram, determine from each map local areas of interest with high slopes, tilt the wafer holder to allow measurement of the high slope areas of interest, and process measurement that covers the entire surface of an object including high slope areas.
摘要:
A method for determining the surface topography of an object with various surface properties in white light interferometry first generates a set of interferograms, produced by a phase shift driving mechanism supplied with known inputs, obtained from a single reflective surface at the location of the test piece. The sequence of interferograms from the test piece then is used to calibrate a sequence of inputs to the phase shift driving mechanism to compensate for non-linear characteristics of the phase shifting mechanism. The temporal interferometric signal or its transform at each pixel of a set of subsequently acquired interferograms from a test piece then is compared with signals or their transforms modeled with different properties of the measuring surface. The measured surface properties which generate a best match to the modeling surface properties are selected as the desired signal.
摘要:
Apparatus and methods are provided for analyzing surface characteristics of a test object using broadband scanning interferometry. Test objects amenable to these apparatus and methods include but are not limited to semiconductor wafers, semiconductor devices, metallic surfaces, and the like. An interferometry system is used to obtain an interferometry signal and related to data embodied in the signal representative of the test object surface. This signal and/or data is used to construct an n-dimensional function that includes an independent frequency variable and an independent time variable, and/or an n-dimensional function that includes an independent scale variable and an independent time variable, and/or a multi-domain function. These functions are compared with various models to obtain a best match that is then used to characterize the test object surface.
摘要:
The present invention consists of a technique and device for measuring the thickness variation and shape of wafers or other polished opaque plates. A combination of two improved phase-shifting Fizeau interferometers is used to simultaneously measure the single-sided distance maps between each side of the wafer and the corresponding reference flat, with the thickness variation and shape being calculated from these data. Provisions are made to determine and eliminate the shape and tilt of the reference surfaces, and also to facilitate the correct overlay of the two single-sided measurements for the calculation of thickness variation and shape.