DISPLAY APPARATUS
    21.
    发明申请
    DISPLAY APPARATUS 有权
    显示设备

    公开(公告)号:US20100253610A1

    公开(公告)日:2010-10-07

    申请号:US12703730

    申请日:2010-02-10

    IPC分类号: G09G3/36 H01L33/00

    摘要: A display apparatus comprises a first thin film transistor (TFT) and a second TFT which are disposed in a display area. A first signal transmission line is disposed in a peripheral area surrounding the display area and is electrically connected to the first TFT. A second signal transmission line adjacent to the first signal transmission line is electrically connected to the second TFT. In a first portion of the peripheral area, the first signal transmission line is parallel to the second signal transmission line and is spaced by a first gap from the second signal transmission line. In a second portion of the peripheral area, the first signal transmission line is parallel to the second signal transmission line and is spaced by a second gap from and the second signal transmission line. The second gap is greater than the first gap. Other features are also provided.

    摘要翻译: 显示装置包括设置在显示区域中的第一薄膜晶体管(TFT)和第二TFT。 第一信号传输线设置在围绕显示区域的周边区域中,并且电连接到第一TFT。 与第一信号传输线相邻的第二信号传输线电连接到第二TFT。 在外围区域的第一部分中,第一信号传输线路与第二信号传输线路平行,并与第二信号传输线路隔开第一间隙。 在外围区域的第二部分中,第一信号传输线平行于第二信号传输线,并与第二信号传输线隔开第二间隙。 第二个差距大于第一个差距。 还提供其他功能。

    Thin Film Transistor Array Panel and Method of Manufacturing the Same
    22.
    发明申请
    Thin Film Transistor Array Panel and Method of Manufacturing the Same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US20100068841A1

    公开(公告)日:2010-03-18

    申请号:US12433743

    申请日:2009-04-30

    IPC分类号: H01L21/336 H01L21/28

    摘要: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a semiconductor layer of polysilicon on an insulating substrate; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming a source region and a drain region by doping conductive impurities in the semiconductor layer; forming an interlayer insulating layer covering the gate electrode; forming a source electrode and a drain electrode respectively connected to the source and the drain regions; forming a passivation layer covering the source and the drain electrodes; forming a pixel electrode connected to the drain electrode; and forming a first alignment key when forming one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode, wherein one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode is at least formed by photolithography process using a photoresist pattern as an etch mask, and a second alignment key completely covering the first alignment key is formed at the same layer as the photoresist pattern.

    摘要翻译: 提供一种制造薄膜晶体管阵列面板的方法,其包括:在绝缘衬底上形成多晶硅半导体层; 在所述半导体层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 通过掺杂半导体层中的导电杂质形成源区和漏区; 形成覆盖所述栅电极的层间绝缘层; 形成分别连接到源区和漏区的源电极和漏电极; 形成覆盖源极和漏极的钝化层; 形成连接到所述漏电极的像素电极; 以及在形成从半导体层,栅电极,源极和漏极以及像素电极中选择的一个时形成第一对准键,其中从半导体层,栅电极,源电极和漏电极中选择一个, 并且至少通过使用光致抗蚀剂图案作为蚀刻掩模的光刻工艺形成像素电极,并且在与光致抗蚀剂图案相同的层处形成完全覆盖第一对准键的第二对准键。

    Thin film transistor array panel and manufacturing method thereof
    23.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07479416B2

    公开(公告)日:2009-01-20

    申请号:US11330312

    申请日:2006-01-10

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a thin film transistor including a gate electrode, a drain electrode, a source electrode and a semiconductor on a substrate; forming a first passivation layer on the drain and the source electrodes; forming a transparent conductive layer on the first passivation layer; etching the transparent conductive layer using a photoresist as an etch mask to expose the portion of the first passivation layer and to form a pixel electrode connected the drain electrode; ashing the first passivation layer and the photoresist; and removing the photoresist.

    摘要翻译: 提供一种制造薄膜晶体管阵列面板的方法,其包括:在衬底上形成包括栅电极,漏电极,源电极和半导体的薄膜晶体管; 在漏极和源电极上形成第一钝化层; 在所述第一钝化层上形成透明导电层; 使用光致抗蚀剂蚀刻透明导电层作为蚀刻掩模以暴露第一钝化层的部分并形成连接漏电极的像素电极; 灰化第一钝化层和光致抗蚀剂; 并去除光致抗蚀剂。

    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME
    24.
    发明申请
    IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    图像传感器及其制造方法

    公开(公告)号:US20080057723A1

    公开(公告)日:2008-03-06

    申请号:US11846943

    申请日:2007-08-29

    申请人: Kyung-Min Park

    发明人: Kyung-Min Park

    IPC分类号: H01L21/311

    摘要: A method for manufacturing an image sensor according to embodiments includes forming a transistor over a substrate. A protective layer including boron (B) may be formed, covering the transistor formed over the substrate. The protective layer including the boron may be annealed to move foreign substances including the boron to the surface of the protective layer. The surface of the protective layer including the foreign material may be removed. An oxide protective layer may be formed over the protective layer including the boron where the foreign substance is removed.

    摘要翻译: 根据实施例的用于制造图像传感器的方法包括在衬底上形成晶体管。 可以形成包括硼(B)的保护层,覆盖在衬底上形成的晶体管。 包括硼的保护层可以退火以将包括硼的异物移动到保护层的表面。 可以除去包括异物的保护层的表面。 氧化物保护层可以形成在包含除去异物的硼的保护层上。

    Thin film transistor array panel, liquid crystal display including the panel and manufacturing method thereof
    25.
    发明申请
    Thin film transistor array panel, liquid crystal display including the panel and manufacturing method thereof 审中-公开
    薄膜晶体管阵列面板,包括面板的液晶显示器及其制造方法

    公开(公告)号:US20060164582A1

    公开(公告)日:2006-07-27

    申请号:US11341555

    申请日:2006-01-26

    IPC分类号: G02F1/1333

    摘要: A thin film transistor array panel is provided, which includes: a substrate having a display area including a plurality of display areas, and a peripheral area surrounding the display area; a plurality of thin film transistors respectively formed in the pixel areas; a passivation layer made of organic material and covering the thin film transistors; a plurality of pixel electrode respectively connected to the thin film transistors and formed on the passivation layer of the pixel areas; an organic light blocking member formed with the same layer as the pixel electrode and disposed in the peripheral area; and a sealant surrounding the display area, the sealant being formed on the passivation layer in the peripheral area. The organic blocking member overlaps the sealant.

    摘要翻译: 提供一种薄膜晶体管阵列面板,其包括:具有包括多个显示区域的显示区域的基板和围绕显示区域的外围区域; 分别形成在像素区域中的多个薄膜晶体管; 由有机材料制成并覆盖薄膜晶体管的钝化层; 分别连接到所述薄膜晶体管并形成在所述像素区域的钝化层上的多个像素电极; 形成与像素电极相同层并设置在周边区域中的有机遮光部件; 以及围绕显示区域的密封剂,密封剂形成在周边区域中的钝化层上。 有机阻挡构件与密封剂重叠。

    Flat panel display device with simplified efficient structure and method of manufacturing the same
    27.
    发明授权
    Flat panel display device with simplified efficient structure and method of manufacturing the same 有权
    具有简化效率结构的平板显示装置及其制造方法

    公开(公告)号:US08610126B2

    公开(公告)日:2013-12-17

    申请号:US13042986

    申请日:2011-03-08

    申请人: Kyung-Min Park

    发明人: Kyung-Min Park

    IPC分类号: H01L33/60

    CPC分类号: H01L27/1255

    摘要: Provided are a flat panel display device and a method of manufacturing the same. The flat panel display device includes a first thin-film transistor including a first active layer, a first insulation layer disposed on the first active layer, and a first gate electrode disposed on the first insulation layer; a second thin-film transistor including a second active layer, the first insulation layer disposed on the second active layer, a second insulation layer disposed on the first insulation layer, and a second gate electrode disposed on the second insulation layer, and electrically connected to the first thin-film transistor; and a capacitor electrically connected to the first thin-film transistor and the second thin-film transistor. In the structure as described above, since different numbers of insulation layers are interposed between active layers and gate electrode in each of the first thin-film transistor and the second thin-film transistor, threshold voltages of the first thin-film transistor and the second thin-film transistor are significantly different from each other, and thus it becomes easy to control the threshold voltages of the first thin-film transistor and the second thin-film transistor.

    摘要翻译: 提供一种平板显示装置及其制造方法。 平板显示装置包括:第一薄膜晶体管,包括第一有源层,设置在第一有源层上的第一绝缘层和设置在第一绝缘层上的第一栅电极; 第二薄膜晶体管,包括第二有源层,设置在第二有源层上的第一绝缘层,设置在第一绝缘层上的第二绝缘层,以及设置在第二绝缘层上的第二栅极,并且电连接到 第一薄膜晶体管; 以及电连接到第一薄膜晶体管和第二薄膜晶体管的电容器。 在上述结构中,由于在第一薄膜晶体管和第二薄膜晶体管的每一个的有源层和栅电极之间插入不同数量的绝缘层,所以第一薄膜晶体管和第二薄膜晶体管的阈值电压 薄膜晶体管彼此显着不同,因此容易控制第一薄膜晶体管和第二薄膜晶体管的阈值电压。

    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME
    28.
    发明申请
    LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    液晶显示装置及其制造方法

    公开(公告)号:US20110221989A1

    公开(公告)日:2011-09-15

    申请号:US13004561

    申请日:2011-01-11

    IPC分类号: G02F1/136 H01J9/00

    摘要: A Liquid Crystal Display (LCD) device and a method of manufacturing the same are provided. The liquid crystal molecules are inclined and rearranged in a radial shape by patterning upper and lower electrodes across and apart from each other on dummy pixels disposed on a black matrix formed in a non-display area of an LCD device and applying an electric field to a liquid crystal layer via the upper and lower electrodes. Thus, ion impurities in the non-display area can be prevented from dispersing to a display area, thereby improving edge part stains of the LCD device. The LCD device includes a first substrate including first pixel electrodes of the dummy pixels; a second substrate facing the first substrate and including first common electrodes formed across and apart from the first pixel electrodes; and a liquid crystal layer disposed between the first substrate and the second substrate, and having liquid crystal molecules rearranged by an electric field applied via the first pixel electrodes and the first common electrodes.

    摘要翻译: 提供一种液晶显示器(LCD)装置及其制造方法。 液晶分子通过在设置在LCD装置的非显示区域中的黑矩阵上的虚拟像素上彼此跨越并分离上下电极而倾斜并重新排列,并将电场施加到 液晶层通过上下电极。 因此,可以防止非显示区域中的离子杂质分散到显示区域,从而改善LCD装置的边缘部分污渍。 LCD装置包括:第一基板,包括虚拟像素的第一像素电极; 面向所述第一基板的第二基板,并且包括跨越并与所述第一像素电极分离的第一公共电极; 以及设置在第一基板和第二基板之间的液晶层,并且通过经由第一像素电极和第一公共电极施加的电场重新排列液晶分子。

    Thin film transistor array panel and method of manufacturing the same
    29.
    发明授权
    Thin film transistor array panel and method of manufacturing the same 有权
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07803672B2

    公开(公告)日:2010-09-28

    申请号:US12433743

    申请日:2009-04-30

    IPC分类号: H01L21/00

    摘要: A method of manufacturing a thin film transistor array panel is provided, which includes: forming a semiconductor layer of polysilicon on an insulating substrate; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer; forming a source region and a drain region by doping conductive impurities in the semiconductor layer; forming an interlayer insulating layer covering the gate electrode; forming a source electrode and a drain electrode respectively connected to the source and the drain regions; forming a passivation layer covering the source and the drain electrodes; forming a pixel electrode connected to the drain electrode; and forming a first alignment key when forming one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode, wherein one selected from the semiconductor layer, the gate electrode, the source and the drain electrodes, and the pixel electrode is at least formed by photolithography process using a photoresist pattern as an etch mask, and a second alignment key completely covering the first alignment key is formed at the same layer as the photoresist pattern.

    摘要翻译: 提供一种制造薄膜晶体管阵列面板的方法,其包括:在绝缘衬底上形成多晶硅半导体层; 在所述半导体层上形成栅极绝缘层; 在栅极绝缘层上形成栅电极; 通过掺杂半导体层中的导电杂质形成源区和漏区; 形成覆盖所述栅电极的层间绝缘层; 形成分别连接到源区和漏区的源电极和漏电极; 形成覆盖源极和漏极的钝化层; 形成连接到所述漏电极的像素电极; 以及在形成从半导体层,栅电极,源极和漏极以及像素电极中选择的一个时形成第一对准键,其中从半导体层,栅电极,源电极和漏电极中选择一个, 并且至少通过使用光致抗蚀剂图案作为蚀刻掩模的光刻工艺形成像素电极,并且在与光致抗蚀剂图案相同的层处形成完全覆盖第一对准键的第二对准键。

    METHOD AND COMPOSITION FOR TREATING ACNE USING LIGNAN COMPOUNDS
    30.
    发明申请
    METHOD AND COMPOSITION FOR TREATING ACNE USING LIGNAN COMPOUNDS 有权
    使用LIGNAN化合物治疗ACNE的方法和组合物

    公开(公告)号:US20090192217A1

    公开(公告)日:2009-07-30

    申请号:US10585553

    申请日:2005-01-07

    摘要: The present invention relates to a method and composition for treating acne using lignan compounds represented by Formula 1. More particularly, the invention relates to an antibacterial composition against acne-causing bacteria, containing lignan compounds represented by Formula 1, as well as a method for treating acne using the same. The lignan compounds represented by Formula 1 are excellent not only in the antibacterial activity of, inhibiting the growth of acne-causing bacteria, but also in thermal stability. Accordingly, the lignan compounds may be useful as antibacterial agents against the acne-causing bacteria, and acne treatment agents.

    摘要翻译: 本发明涉及使用由式1表示的木酚素化合物治疗痤疮的方法和组合物。更具体地说,本发明涉及含有由式1表示的木酚素化合物的抗痤疮细菌的抗菌组合物,以及用于 使用相同的治疗痤疮。 由式1表示的木酚素化合物不仅具有抑制痤疮细菌生长的抗菌活性以及热稳定性的优异性。 因此,木脂素化合物可用作抗痤疮细菌和痤疮治疗剂的抗菌剂。