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    Organic light emitting display panel and organic light emitting display apparatus using the same
    22.
    发明授权
    Organic light emitting display panel and organic light emitting display apparatus using the same 有权

    公开(公告)号：US10811485B2

    公开(公告)日：2020-10-20

    申请号：US16219440

    申请日：2018-12-13

    Applicant: LG Display Co., Ltd.

    Inventor： SeHee Park ,  PilSang Yun ,  Jaeyoon Park

    IPC: H01L27/32 ,  H01L51/52 ,  G09G3/3291 ,  H01L27/12 ,  G09G3/3233

    Abstract: An organic light emitting display panel can include a substrate; pixels disposed on the substrate; a driving transistor including: a driving active layer, a driving gate electrode overlapping with the driving active layer, a driving first conductor extended from one end of the driving active layer, a driving second conductor extended from the other end of the driving active layer, and a driving first gate insulating film overlapping with the driving active layer; a switching transistor including: a switching active layer, a switching gate electrode overlapping with the switching active layer, a switching first conductor extended from one end of the switching active layer, a switching second conductor extended from the other end of the switching active layer, and a switching first gate insulating film overlapping with the switching active layer; an organic light emitting diode; and a second gate insulating film disposed between the driving and switching gate electrodes of the driving and switching transistors, and the driving first conductor, the driving second conductor, the driving first gate insulating film, the switching first conductor, the switching second conductor and the switching first gate insulating film.

    Transistor having vertical structure and electric device
    25.
    发明授权
    Transistor having vertical structure and electric device 有权

    公开(公告)号：US11069814B2

    公开(公告)日：2021-07-20

    申请号：US16575077

    申请日：2019-09-18

    Applicant: LG DISPLAY CO., LTD.

    Inventor： SangYun Sung ,  SeHee Park ,  Jiyong Noh ,  InTak Cho ,  PilSang Yun

    IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49

    Abstract: An electronic device can include a panel; a driver circuit configured to drive the panel; and a transistor disposed in the panel, the transistor including: a gate electrode disposed on a substrate, a first insulating film disposed on the gate electrode, an active layer disposed on the first insulating film, the active layer including: a first portion of the active layer overlapping with an upper surface of the gate electrode, a second portion of the active layer extending from the first portion, being disposed along a side surface of the gate electrode and including a channel area, and a third portion of the active layer extending from the second portion of the active layer, the third portion of the active layer being disposed on a portion of the first insulating film that does not overlap with the gate electrode, a second insulating film disposed on the active layer, a first electrode disposed on the second insulating film, the first electrode being electrically connected to the first portion of the active layer, and a second electrode disposed on the second insulating film, the second electrode being electrically connected to the third portion of the active layer.

    Display device comprising thin film transistors and method for manufacturing the same
    26.
    发明授权
    Display device comprising thin film transistors and method for manufacturing the same 有权

    公开(公告)号：US11063103B2

    公开(公告)日：2021-07-13

    申请号：US16666869

    申请日：2019-10-29

    Applicant: LG Display Co., Ltd.

    Inventor： JungSeok Seo ,  PilSang Yun ,  SeHee Park ,  Jiyong Noh

    IPC: H01L27/32 ,  H01L27/12

    Abstract: A display device includes a substrate, a pixel driver on the substrate, and a display element connected to the pixel driver. The pixel driver includes a conductive layer on the substrate, a buffer layer on the conductive layer, a semiconductor layer on the buffer layer, a gate electrode, the gate electrode overlapping the semiconductor layer, and a source electrode and a drain electrode connected to the semiconductor layer. The buffer layer includes a flattened portion overlapping the conductive layer, and a stepped portion overlapping the periphery of the conductive layer. The semiconductor layer includes a first oxide semiconductor layer on the buffer layer, and a second oxide semiconductor layer on the first oxide semiconductor layer. A width of the first oxide semiconductor layer is larger than a width of the second oxide semiconductor layer, and the first oxide semiconductor layer is on the stepped portion of the buffer layer.

    Thin film transistor having supporting layer, method for manufacturing the same and display device comprising the same
    27.
    发明授权
    Thin film transistor having supporting layer, method for manufacturing the same and display device comprising the same 有权

    公开(公告)号：US10741697B2

    公开(公告)日：2020-08-11

    申请号：US16211151

    申请日：2018-12-05

    Applicant: LG Display Co., Ltd.

    Inventor： Jiyong Noh ,  Jaeman Jang ,  JuHeyuck Baeck ,  PilSang Yun

    IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L21/38 ,  G02F1/1368 ,  H01L27/32

    Abstract: A thin film transistor is provided. The thin film transistor includes an oxide semiconductor layer on a substrate, a gate electrode insulated from the oxide semiconductor layer to overlap at least a portion of the oxide semiconductor layer, a source electrode connected to the oxide semiconductor layer, and a drain electrode spaced apart from the source electrode and connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first oxide semiconductor layer on the substrate and a second oxide semiconductor layer on the first oxide semiconductor layer, the first oxide semiconductor layer includes nitrogen of 1 at % to 5 at % concentration with respect to number of atoms, and the second oxide semiconductor layer has a nitrogen concentration which is lower than a nitrogen concentration of the first oxide semiconductor layer and a gradient of the nitrogen concentration such that the nitrogen concentration is lowered in a direction closer to the gate electrode.

    PANEL, TRANSISTOR AND ELECTRONIC DEVICE
    28.
    发明申请
    PANEL, TRANSISTOR AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20200152913A1

    公开(公告)日：2020-05-14

    申请号：US16668262

    申请日：2019-10-30

    Applicant: LG Display Co., Ltd.

    Inventor： Jiyong NOH ,  PilSang Yun ,  SeHee Park ,  JungSeok Seo

    IPC: H01L51/52 ,  H01L27/12

    Abstract: A panel comprises a substrate, a semiconductor layer on the substrate, and including an oxide semiconductor or a low-temperature polycrystalline silicon, an interlayer insulating film on the substrate and the semiconductor layer, a passivation layer on the interlayer insulating film, an overcoat layer on the passivation layer, a light emitting layer on the overcoat layer, and an encapsulation layer on the light emitting layer. The encapsulation layer includes an auxiliary encapsulation layer having at least one of a silicon nitride (SiNx:H) layer including hydrogen, a silicon oxide (SiO2:H) layer including hydrogen, or a silicon oxynitride (SiON:H) layer including hydrogen. At least one of the interlayer insulating film, the passivation layer, or the overcoat layer is a hydrogen trapping layer.

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