公开(公告)号：US20230361077A1

公开(公告)日：2023-11-09

申请号：US18038136

申请日：2020-11-23

Applicant: LG ELECTRONICS INC.

Inventor： Byungjun KANG ,  Imdeok JUNG ,  Philwon YOON ,  Sungyun PARK ,  Dohwan YANG ,  Junghoon KIM

IPC: H01L23/00 ,  H01L21/683 ,  H01L21/677 ,  H01L21/67 ,  H01L25/075

CPC classification number: H01L24/97 ,  H01L21/6835 ,  H01L21/67742 ,  H01L21/67144 ,  H01L21/67754 ,  H01L21/67757 ,  H01L25/0753 ,  H01L2224/95085 ,  H01L2224/95101 ,  H01L2224/95144 ,  H01L2924/12041 ,  H01L2224/97

Abstract: Discussed is a self-assembly apparatus that can include a chamber, at least one first supply part configured to supply a fluid to the chamber, a mounting part disposed on a first side of the chamber to mount a substrate to be inclined with respect to a horizontal plane of the chamber, the substrate having an assembly surface, and a magnet module disposed on an opposite surface of the substrate opposite to the assembly surface of the substrate, wherein the mounting part is configured to: insert the substrate into an upper side of the chamber, guide the inserted substrate from the upper side of the chamber toward a lower side of the chamber, and fix the guided substrate to the lower side of the chamber

公开(公告)号：US20220320371A1

公开(公告)日：2022-10-06

申请号：US17763893

申请日：2019-10-02

Applicant: LG ELECTRONICS INC.

Inventor： Chilkeun PARK ,  Junghoon KIM ,  Chunghyun LIM

IPC: H01L33/24 ,  H01L25/16 ,  H01L33/00 ,  H01L33/44

Abstract: The present specification provides a display device using semiconductor light-emitting diodes which are self-assembled in fluid, and a method for manufacturing same. Specifically, the semiconductor light-emitting diode comprises: a first-conductive-type electrode layer and a second-conductive-type electrode layer; a first-conductive-type semiconductor layer electrically connected to the first-conductive-type electrode layer; an active layer provided on the first-conductive-type semiconductor layer; and a second-conductive-type semiconductor layer provided on the active layer and electrically connected to the second-conductive-type electrode layer, wherein one surface of the second-conductive-type semiconductor layer comprises a mesa structure formed by etching a portion of the one surface, and the second-conductive-type electrode layer is provided on the one surface comprising the mesa structure of the second-conductive-type semiconductor layer.

公开(公告)号：US20220302347A1

公开(公告)日：2022-09-22

申请号：US17834452

申请日：2022-06-07

Applicant: LG ELECTRONICS INC.

Inventor： Junghoon KIM ,  Byoungkwon CHO

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/24 ,  H01L33/44 ,  H01L33/62 ,  H01L23/00

Abstract: A display device includes a semiconductor light emitting device disposed on a substrate and having a first conductive electrode disposed on a first upper portion of the semiconductor light emitting device and a second conductive electrode disposed on a second upper portion of the semiconductor light emitting device, a passivation layer disposed on the semiconductor light emitting device, a first electrode electrically connected to the first conductive electrode, and a second electrode electrically connected to the second conductive electrode. A part of the second electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween.

公开(公告)号：US20220302342A1

公开(公告)日：2022-09-22

申请号：US17832221

申请日：2022-06-03

Applicant: LG ELECTRONICS INC.

Inventor： Junghoon KIM ,  Hyunwoo CHO ,  Mihee HEO

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/62

Abstract: A display device includes a plurality of semiconductor light emitting diodes, first and second electrodes respectively extending from the plurality of semiconductor light emitting diodes to supply an electrical signal to the plurality of semiconductor light emitting diodes, a plurality of pair electrodes disposed on a substrate and having a first electrode and a second electrode, a dielectric layer disposed on the plurality of pair electrodes, and a chemical bond layer disposed between the dielectric layer and the plurality of semiconductor light emitting diodes and forming a covalent bond with the dielectric layer and each of the plurality of semiconductor light emitting diodes. The chemical bond layer bonds the semiconductor light emitting diodes to the dielectric layer when a voltage applied to the plurality of pair electrodes is cut off after the plurality of semiconductor light emitting diodes are assembled on the dielectric layer.

公开(公告)号：US20220102579A1

公开(公告)日：2022-03-31

申请号：US17550743

申请日：2021-12-14

Applicant: LG ELECTRONICS INC.

Inventor： Byoungkwon CHO ,  Junghoon KIM

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/60

Abstract: A semiconductor light emitting element can include an n-type semiconductor layer, a p-type semiconductor layer in a first region on the n-type semiconductor layer, a p-type electrode on the p-type semiconductor layer, an n-type electrode in a second region different from the first region on the n-type semiconductor layer, a magnetic layer under the n-type semiconductor layer, a reflective layer between the n-type semiconductor layer and the magnetic layer, and a passivation layer surrounding the n-type semiconductor layer, the p-type semiconductor layer, the p-type electrode, the n-type electrode, and the magnetic layer.

公开(公告)号：US20200303592A1

公开(公告)日：2020-09-24

申请号：US16894262

申请日：2020-06-05

Applicant: LG ELECTRONICS INC.

Inventor： Junghoon KIM ,  Changseo PARK ,  Bongchu SHIM ,  Byoungkwon CHO ,  Hyunwoo CHO

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: Discussed is a display device, including a semiconductor light emitting device and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction of the semiconductor light emitting device, wherein the first conductive semiconductor layer has a symmetrical shape with respect to at least one direction of the semiconductor light emitting device so that the first conductive electrode and the second conductive electrode are arranged at preset positions when the semiconductor light emitting device is accommodated into the receiving groove.

公开(公告)号：US20200251608A1

公开(公告)日：2020-08-06

申请号：US16691113

申请日：2019-11-21

Applicant: LG ELECTRONICS INC.

Inventor： Byoungkwon CHO ,  Junghoon KIM

IPC: H01L33/00 ,  H01L33/60 ,  H01L25/075

Abstract: A semiconductor light emitting element according to an embodiment of the present disclosure includes: a n-type semiconductor layer; a p-type semiconductor layer formed in a first region on the n-type semiconductor layer; a p-type electrode formed on the p-type semiconductor layer; a n-type electrode formed in a second region different from the first region on the n-type semiconductor layer; and a magnetic layer formed under the n-type semiconductor layer.