公开(公告)号：US10481124B2

公开(公告)日：2019-11-19

申请号：US15818718

申请日：2017-11-20

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. Fife ,  Jordan Owens ,  Shifeng Li ,  James Bustillo

IPC: G01N27/414 ,  B01L3/00

Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

公开(公告)号：US20180366340A1

公开(公告)日：2018-12-20

申请号：US15945707

申请日：2018-04-04

Applicant: Life Technologies Corporation

Inventor： Phil Waggoner ,  Jordan Owens

IPC: H01L21/311 ,  H01L21/027 ,  H01L21/02 ,  H01L21/285 ,  H01L21/3213 ,  G01N27/414

CPC classification number: H01L21/31144 ,  G01N27/4146 ,  G01N27/4148 ,  H01L21/0206 ,  H01L21/0271 ,  H01L21/28556 ,  H01L21/31111 ,  H01L21/32133

Abstract: A method for forming a well providing access to a sensor pad includes patterning a first photoresist layer over a dielectric structure disposed over the sensor pad; etching a first access into the dielectric structure and over the sensor pad, the first access having a first characteristic diameter; patterning a second photoresist layer over the dielectric structure; and etching a second access over the dielectric structure and over the sensor pad. The second access has a second characteristic diameter. The first and second accesses overlapping. A diameter ratio of the first characteristic diameter to the second characteristic diameter is not greater than 0.7. The first access exposes the sensor pad. The second access has a bottom depth less than a bottom depth of the first access.

公开(公告)号：US20180180572A1

公开(公告)日：2018-06-28

申请号：US15818718

申请日：2017-11-20

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. FIFE ,  Jordan Owens ,  Shifeng Li ,  James Bustillo

IPC: G01N27/414 ,  B01L3/00

Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

公开(公告)号：US09823217B2

公开(公告)日：2017-11-21

申请号：US15014802

申请日：2016-02-03

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. Fife ,  Jordan Owens ,  Shifeng Li ,  James Bustillo

IPC: G01N27/414 ,  B01L3/00

CPC classification number: G01N27/414 ,  B01L3/502761 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0877 ,  G01N27/4145 ,  G01N27/4148

Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

公开(公告)号：US08963216B2

公开(公告)日：2015-02-24

申请号：US13801002

申请日：2013-03-13

Applicant: Life Technologies Corporation

Inventor： Keith Fife ,  James Bustillo ,  Jordan Owens

IPC: G01N27/414

CPC classification number: G01N27/414 ,  G01N27/4145

Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.

Abstract translation: 在一个实施方式中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电侧壁间隔物位于开口的侧壁上并与浮栅导体的上表面接触。

公开(公告)号：US20140273324A1

公开(公告)日：2014-09-18

申请号：US13801186

申请日：2013-03-13

Applicant: LIFE TECHNOLOGIES CORPORATION

Inventor： Keith G. Fife ,  James Bustillo ,  Jordan Owens

IPC: G01N27/414 ,  H01L29/66

CPC classification number: G01N27/4145

Abstract: In one implementation, a method for manufacturing a chemical sensor is described. The method includes forming a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material is formed defining an opening extending to the upper surface of the floating gate conductor. A conductive material is formed within the opening and on an upper surface of the dielectric material. A fill material is formed on the conductive material. The fill material is used as a protect mask to remove the conductive material on the upper surface of the dielectric material. The fill material is then removed to expose remaining conductive material on a sidewall of the opening.

Abstract translation: 在一个实施方式中，描述了用于制造化学传感器的方法。 该方法包括形成包括具有上表面的浮栅导体的化学敏感场效应晶体管。 形成介电材料，限定了延伸到浮动栅极导体的上表面的开口。 导电材料形成在电介质材料的开口内和上表面上。 在导电材料上形成填充材料。 填充材料用作保护掩模以去除介电材料的上表面上的导电材料。 然后去除填充材料以在开口的侧壁上露出剩余的导电材料。